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Magnesium fluoride (MgF2) single crystal has been widely used as a material for application in optics due to its excellent properties like birefringence, wide range of transparency and low refractive index. As such, MgF2 has been proposed for planar waveguide structures. Ion implantation method was frequently used for planar waveguide production due to its ability to modulate optical properties by introduction of impurities and defects in crystal lattice. In all optics fabrication processes, there are demands for a precise control of optical characteristics modulation and hence the need for precise distribution of implanted impurities and induced damage. In this study, 4 MeV C3+ ions with the fluence of 5×1015 ions/cm2 were implanted in (001) axial direction of MgF2 single crystal. In order to determine the damage depth distribution in the crystal sample, photoluminescence (PL) spectroscopy was proposed as a method of evaluation. PL spectroscopy was used as a convenient method for damage investigation of transparent and semi-transparent samples. The cross-section of the implanted zone was mapped with the step of 0.34 µm and the variations in the spectra were investigated. It was shown that intensity evolution of two prominent wide bands with the intensity maximums at about 590 nm and 733 nm can be used for damage depth distribution estimation. Comparing the relative changes of derivatives of the band’s intensities, data related to the damage depth distribution were obtained. Obtained distribution was compared with the SRIM calculation of displacement damage. Considering the difference in implantation direction, good agreement with SRIM results was obtained. As a consequence of ion channeling, it was shown that damage distribution is extended deeper (for about 20%).

During the ion implantation process, regardless if it was attentional or not, amorphization will be introduced into the crystal structure. Depending on the chosen ions, different quantities of the amorphization will be introduced for the same applied fluences. In order to estimate the total amorphization of the SiC crystal for different ions and fluences combination, an assessment model was proposed. For this purpose, 4 MeV carbon and silicon ions with multiple fluences were implanted in the [0001] axial direction of a 6H-SiC single crystal. The amorphization depth distributions were obtained by Elastic Backscattering Spectroscopy/channeling spectra analysis via Channeling SIMulation (CSIM) phenomenological computer code. As a result, relation of the total induced amorphization and implantation fluences for carbon and silicon ions were obtained. Based on these experimental results, a total amorphization assessment model for different ions (energy of 4 MeV) and fluences combination was established. X Serbian Ceramic Society Conference - Advanced Ceramics and Application : new frontiers in multifunctional material science and processing : program and the book of abstracts; September 26-27, 2022; Belgrade

In this work, we study the silicon amorphization dependence on the crystal depth induced by 6-MeV Al2+ ions implanted in the LT 110 GT and randomly oriented silicon crystal channels, which was not directly experimentally accessible in the previous similar high-energy ioncrystal implantation cases. Accordingly, the micro-Raman spectroscopy scanning measurements along the crystal transversal cross section of the ion implanted region were performed. The ion fluence was 10(17) particles/cm(2). The scanning steps were 0.2 and 0.3 mu m, for the channeling and random ion implantations, respectively. The obtained results are compared with the corresponding Rutherford backscattering spectra of 1.2-MeV protons in the random and channeling orientations measured during the channeling implantation. Additionally, scanning electron microscope picture was taken on the transversal cross section of the implanted region in the channeling implantation case. We show here that the obtained silicon amorphization maxima are in excellent agreement with the corresponding estimated maxima of the aluminum concentration in silicon. This clearly indicates that the used specific micro-Raman spectroscopy scanning technique can be successfully applied for the depth profiling of the crystal amorphization induced by high-energy ion implantation.