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The study of quantum phase transitions that are not clearly associated with broken symmetry is a major effort in condensed matter physics, particularly in regard to the problem of high-temperature superconductivity, for which such transitions are thought to underlie the mechanism of superconductivity itself. Here we argue that the putative quantum critical point in the prototypical unconventional superconductor CeCoIn5 is characterized by the delocalization of electrons in a transition that connects two Fermi surfaces of different volumes, with no apparent broken symmetry. Drawing on established theory of f-electron metals, we discuss an interpretation for such a transition that involves the fractionalization of spin and charge, a model that effectively describes the anomalous transport behavior we measured for the Hall effect.

Exchange bias is a property of widespread technological utility, but its underlying mechanism remains elusive, in part because it is rooted in the interaction of coexisting order parameters in the presence of complex magnetic disorder. Here we show that a giant exchange bias housed within a spin-glass phase arises in a disordered antiferromagnet. The magnitude and robustness of the exchange bias emerges from a convolution of two energetic landscapes, namely the highly degenerate landscape of the spin glass biased by the sublattice spin configuration of the antiferromagnet. The former provides a source of uncompensated moment, whereas the latter provides a mechanism for its pinning, which leads to the exchange bias. Tuning the relative strengths of the spin-glass and antiferromagnetic order parameters reveals a principle for tailoring the exchange bias, with potential applications to spintronic technologies. Coexistence of a spin-glass phase with antiferromagnetism in an intercalated crystal produces a large exchange bias effect. This is due to the interplay of disorder and frustration.

Nematic order is the breaking of rotational symmetry in the presence of translational invariance. While originally defined in the context of liquid crystals, the concept of nematic order has arisen in crystalline matter with discrete rotational symmetry, most prominently in the tetragonal Fe-based superconductors where the parent state is four-fold symmetric. In this case the nematic director takes on only two directions, and the order parameter in such 'Ising-nematic' systems is a simple scalar. Here, using a spatially resolved optical polarimetry technique, we show that a qualitatively distinct nematic state arises in the triangular lattice antiferromagnet Fe1/3NbS2. The crucial difference is that the nematic order on the triangular lattice is a [Formula: see text] or three-state Potts-nematic order parameter. As a consequence, the anisotropy axes of response functions such as the resistivity tensor can be continuously reoriented by external perturbations. This discovery lays the groundwork for devices that exploit analogies with nematic liquid crystals.

The study of quantum phase transitions that are not clearly associated with broken symmetry is a major effort in condensed matter physics, particularly in regard to the problem of high-temperature superconductivity, for which such transitions are thought to underlie the mechanism of superconductivity itself. Here we argue that the putative quantum critical point in the prototypical unconventional superconductor CeCoIn

The theory behind the electrical switching of antiferromagnets is premised on the existence of a well defined broken symmetry state that can be rotated to encode information. A spin glass is in many ways the antithesis of this state, characterized by an ergodic landscape of nearly degenerate magnetic configurations, choosing to freeze into a distribution of these in a manner that is seemingly bereft of information. In this study, we show that the coexistence of spin glass and antiferromagnetic order allows a novel mechanism to facilitate the switching of the antiferromagnet Fe$_{1/3+\delta}$NbS$_2$, which is rooted in the electrically-stimulated collective winding of the spin glass. The local texture of the spin glass opens an anisotropic channel of interaction that can be used to rotate the equilibrium orientation of the antiferromagnetic state. The use of a spin glass' collective dynamics to electrically manipulate antiferromagnetic spin textures has never been applied before, opening the field of antiferromagnetic spintronics to many more material platforms with complex magnetic textures., Comment: 7 pages, 4 Figures, supplement available on reasonable request

We perform high-field magnetization measurements on the triangular lattice antiferromagnet Fe$_{1/3}$NbS$_2$. We observe a plateau in the magnetization centered at approximately half the saturation magnetization over a wide range of temperature and magnetic field. From density functional theory calculations, we determine a likely set of magnetic exchange constants. Incorporating these constants into a minimal Hamiltonian model of our material, we find that the plateau and of the $Z_3$ symmetry breaking ground state both arise from interplane and intraplane antiferromagnetic interactions acting in competition. These findings are pertinent to the magneto-electric properties of Fe$_{1/3}$NbS$_2$, which allow electrical switching of antiferromagnetic textures at relatively low current densities., 5 pages, 4 figures, supplemental material on request

Advances in controlling the correlated behavior of transition metal dichalcogenides have opened a new frontier of many-body physics in two dimensions. A field where these materials have yet to make a deep impact is antiferromagnetic spintronics – a relatively new research direction promising technologies with fast switching times, insensitivity to magnetic perturbations, and reduced crosstalk. Here, we present measurements on the intercalated TMD Fe1/3NbS2 which exhibits antiferromagnetic ordering below 42K. We find that remarkably low current densities of order 10KA/cm2 can reorient the magnetic order, which can be detected through changes in the sample resistance, demonstrating its use as an electronically-accessible antiferromagnetic switch. Fe1/3NbS2 is part of a larger family of magnetically intercalated TMDs, some of which may exhibit switching at room temperature, forming a platform from which to build tunable antiferromagnetic spintronic devices.

Recent advances in tuning the correlated behavior of graphene and transition-metal dichalcogenides (TMDs) have opened a new frontier in the study of many-body physics in two dimensions and promise exciting possibilities for new quantum technologies. An emerging field where these materials have yet to make a deep impact is the study of antiferromagnetic (AFM) spintronics - a relatively new research direction that promises technologies that are insensitive to external magnetic fields, fast switching times, and reduced crosstalk. In this study we present measurements on the intercalated TMD Fe1/3NbS2 which exhibits antiferromagnetic ordering below 42K. We find that current densities on the order of 10^4 A/cm^2 can reorient the magnetic order, the response of which can be detected in the sample's resistance. This demonstrates that Fe1/3NbS2 can be used as an antiferromagnetic switch with electronic "write-in" and "read-out". This switching is found to be stable over time and remarkably robust to external magnetic fields. Fe1/3NbS2 is a rare example of an AFM system that exhibits fully electronic switching behavior in single crystal form, making it appealing for low-power, low-temperature memory storage applications. Moreover, Fe1/3NbS2 is part of a much larger family of magnetically intercalated TMDs, some of which may exhibit the switching behavior at higher temperatures and form a platform from which to build tunable AFM spintronic devices., 12 pages, 4 figures

Nematic order is the breaking of rotational symmetry in the presence of translational invariance. While originally defined in the context of liquid crystals, the concept of nematic order has arisen in crystalline matter with discrete rotational symmetry, most prominently in the tetragonal Fe-based superconductors where the parent state is four-fold symmetric. In this case the nematic director takes on only two directions, and the order parameter in such 'Ising-nematic' systems is a simple scalar. Here, using a spatially resolved optical polarimetry technique, we show that a qualitatively distinct nematic state arises in the triangular lattice antiferromagnet Fe

Advances in controlling the correlated behaviour of transition metal dichalcogenides have opened a new frontier of many-body physics in two dimensions. A field where these materials have yet to make a deep impact is antiferromagnetic spintronics-a relatively new research direction promising technologies with fast switching times, insensitivity to magnetic perturbations and reduced cross-talk

In two-dimensional (2D) superconductors an insulating state can be induced either by applying a magnetic field, $H$, or by increasing disorder. Many scenarios have been put forth to explain the superconductor to insulator transition (SIT): dominating fermionic physics after the breaking of Cooper pairs, loss of phase coherence between superconducting islands embedded in a metallic or insulating matrix and localization of Cooper pairs with concomitant condensation of vortex-type excitations. The difficulty in characterizing the insulating state and its origin stems from the lack of a continuous mapping of the superconducting to insulating phase diagram in a single sample. Here we use the two-dimensional (2D) electron liquid formed at the interface between the two insulators (111) SrTiO$_3$ and LaAlO$_3$ to study the superconductor to insulator transition. This crystalline interface surprisingly exhibits very strong features previously observed only in amorphous systems. By use of electrostatic gating and magnetic fields, the sample is tuned from the metallic region, where supeconductivity is fully manifested, deep into the insulating state. Through examination of the field dependence of the sheet resistance and comparison of the response to fields in different orientations we identify a new magnetic field scale, H$_{pairing}$, where superconducting fluctuations are muted. Our findings show that vortex fluctuations excitations and Cooper pair localization are responsible for the observed SIT and that these excitations surprisingly persist deep into the insulating state.

We measure the gate voltage (V_{g}) dependence of the superconducting properties and the spin-orbit interaction in the (111)-oriented LaAlO_{3}/SrTiO_{3} interface. Superconductivity is observed in a dome-shaped region in the carrier density-temperature phase diagram with the maxima of superconducting transition temperature T_{c} and the upper critical fields lying at the same V_{g}. The spin-orbit interaction determined from the superconducting parameters and confirmed by weak-antilocalization measurements follows the same gate voltage dependence as T_{c}. The correlation between the superconductivity and spin-orbit interaction as well as the enhancement of the parallel upper critical field, well beyond the Chandrasekhar-Clogston limit, suggest that superconductivity and the spin-orbit interaction are linked in a nontrivial fashion. We propose possible scenarios to explain this unconventional behavior.

We measured the magnetoresistance of the 2D electron liquid formed at the (111) ${\mathrm{LaAlO}}_{3}/{\mathrm{SrTiO}}_{3}$ interface. The hexagonal symmetry of the interface is manifested in a six-fold crystalline component appearing in the anisotropic magnetoresistance (AMR) and planar Hall data, which agree well with symmetry analysis we performed. The six-fold component increases with carrier concentration, reaching 15% of the total AMR signal. Our results suggest the coupling between higher itinerant electronic bands and the crystal as the origin of this effect and demonstrate that the (111) oxide interface is a unique hexagonal system with tunable magnetocrystalline effects.

Epitaxial growth of atomically-sharp interfaces serves as one of the main building blocks of nanofabrication. Such interfaces are crucial for the operation of various devices including transistors, photo-voltaic cells, and memory components. In order to avoid charge traps that may hamper the operation of such devices, it is critical for the layers to be atomically-sharp. Fabrication of atomically sharp interfaces normally requires ultra-high vacuum techniques and high substrate temperatures. We present here a new self-limiting wet chemical process for deposition of epitaxial layers from alkoxide precursors. This method is fast, cheap, and yields perfect interfaces as we validate by various analysis techniques. It allows the design of heterostructures with half-unit cell resolution. We demonstrate our method by designing hole-type oxide interfaces SrTiO3/BaO/LaAlO3. We show that transport through this interface exhibits properties of mixed electron-hole contributions with hole mobility exceeding that of electrons. Our method and results are an important step forward towards a controllable design of a p-type oxide interface., Comment: 5 figures 5 pages

A new nano-lithography technique compatible with conducting oxide interfaces, which requires a single lithographic step with no additional amorphous layer deposition or etching, is presented. It is demonstrated on SrTiO3/LaAlO3 interface where a constriction is patterned in the electron liquid. We find that an additional back-gating can further confine the electron liquid into an isolated island. Conductance and differential conductance measurements show resonant tunneling through the island. The data at various temperatures and magnetic fields are analyzed and the effective island size is found to be of the order of 10nm. The magnetic field dependence suggests absence of spin degeneracy in the island. Our method is suitable for creating superconducting and oxide-interface based electronic devices., 6 pages, 5 figures

The oxide interface SrTiO3/LaAlO3 supports a 2D electron liquid displaying superconductivity and magnetism, while allowing for a continuous control of the electron density using a gate. Our recent measurements have shown a similar surprising nonmonotonic behavior as function of the gate voltage (carrier density) of three quantities: the superconducting critical temperature and field, the inverse Hall coefficient, and the frequency of quantum oscillations. While the total density has to be monotonic as function of gate, the last result indicates that one of the involved bands has a nonmontonic occupancy as function of the chemical potential. We show how electronic interactions can lead to such an effect, by creating a competition between the involved bands and making their structure non-rigid, and thus account for all these effects. Adding Fock terms to our previous Hartree treatment makes this scenario even more generic., Comment: Proceeding of the 2016 MRS Fall Meeting (Symposium EM5) published in MRS Advances. 6 pages, 5 figures

The interface between the two band insulators SrTiO3 and LaAlO3 unexpectedly has the properties of a two dimensional electron gas. It is even superconducting with a transition temperature, Tc, that can be tuned using gate bias Vg, which controls the number of electrons added or removed from the interface. The gate bias - temperature (Vg, T) phase diagram is characterized by a dome-shaped region where superconductivity occurs, i.e., Tc has a non-monotonic dependence on Vg, similar to many unconventional superconductors. In this communication the frequency of the quantum resistance-oscillations versus inverse magnetic field is reported for various Vg. This frequency follows the same nonmonotonic behavior as Tc; similar trend is seen in the low field limit of the Hall coefficient. We theoretically show that electronic correlations result in a non-monotonic population of the mobile band, which can account for the experimental behavior of the normal transport properties and the superconducting dome., Comment: Nature Communications 2015

Resistance as a function of temperature down to 20 mK and magnetic fields up to 18 T for various carrier concentrations is measured for nanowires made from the ${\mathrm{SrTiO}}_{3}/{\mathrm{LaAlO}}_{3}$ interface using a hard mask shadow deposition technique. The narrow width of the wires (of the order of 50 nm) allows us to separate out the magnetic effects from the dominant superconducting ones at low magnetic fields. At this regime hysteresis loops are observed along with the superconducting transition. From our data analysis, we find that the magnetic order probed by the giant magnetoresistance effect vanishes at ${T}_{\text{Curie}}=954\ifmmode\pm\else\textpm\fi{}20\text{ }\text{ }\mathrm{mK}$. This order is not a simple ferromagnetic state but consists of domains with opposite magnetization having a preferred in-plane orientation.

In an ideal bulk topological-insulator (TI) conducting surface states protected by time reversal symmetry enfold an insulating crystal. However, the archetypical TI, Bi2Se3, is actually never insulating; it is in fact a relatively good metal. Nevertheless, it is the most studied system among all the TIs, mainly due to its simple band-structure and large spin-orbit gap. Recently it was shown that copper intercalated Bi2Se3 becomes superconducting and it was suggested as a realization of a topological superconductor (TSC). Here we use a combination of techniques that are sensitive to the shape of the Fermi surface (FS): the Shubnikov-de Haas (SdH) effect and angle resolved photoemission spectroscopy (ARPES) to study the evolution of the FS shape with carrier concentration, n. We find that as n increases, the FS becomes 2D-like. These results are of crucial importance for understanding the superconducting properties of CuxBi2Se3., 5 pages, 5 figures

Shubnikov--de Haas oscillations are observed in Bi${}_{2}$Se${}_{3}$ flakes with high carrier concentration and low bulk mobility. These oscillations probe the protected surface states and enable us to extract their carrier concentration, effective mass, and Dingle temperature. The Fermi momentum obtained is in agreement with angle-resolved photoemission spectroscopy measurements performed on crystals from the same batch. We study the behavior of the Berry phase as a function of magnetic fields. The standard theoretical considerations fail to explain the observed behavior.

In 2004 Ohtomo and Hwang discovered the conducting interface between the two insulating non-magnetic oxide crystals LaAlO 3 and SrTiO 3. Since its discovery this interface has been under intense research both on the theoretical and on the experimental fronts. The carrier density of the interface was found to be gate tunable. This carrier density controls the superconducting temperature in a non-monotonic fashion. Surprisingly, along with the superconductivity, various probes discovered the presence of magnetism these two orders are considered to be mutually excluded. None of the reported experiments has yet been able to determine the full nature of the magnetic ground state of the interface.