1. Spectral tuning and nanoscale localization of single color centers in silicon via controllable strain
- Author
-
Buzzi, Alessandro, Papon, Camille, Pirro, Matteo, Hooybergs, Odiel, Raniwala, Hamza, Saggio, Valeria, Errando-Herranz, Carlos, and Englund, Dirk
- Subjects
Physics - Optics ,Physics - Applied Physics ,Quantum Physics - Abstract
The development of color centers in silicon enables scalable quantum technologies by combining telecom-wavelength emission and compatibility with mature silicon fabrication. However, large-scale integration requires precise control of each emitter's optical transition to generate indistinguishable photons for quantum networking. Here, we demonstrate a foundry-fabricated photonic integrated circuit (PIC) combining suspended silicon waveguides with a microelectromechanical (MEMS) cantilever to apply local strain and spectrally tune individual G-centers. Applying up to 35 V between the cantilever and the substrate induces a reversible wavelength shift of the zero-phonon line exceeding 100 pm, with no loss in brightness. Moreover, by modeling the strain-induced shifts with a `digital twin' physical model, we achieve vertical localization of color centers with sub-3 nm vertical resolution, directly correlating their spatial position, dipole orientation, and spectral behavior. This method enables on-demand, low-power control of emission spectrum and nanoscale localization of color centers, advancing quantum networks on a foundry-compatible platform., Comment: 30 pages, 28 figures
- Published
- 2025