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Description, This work shows how itinerant electrons localize due to increased interactions across the Mott metal-insulator transition., In solids, strong repulsion between electrons can inhibit their movement and result in a “Mott” metal-to-insulator transition (MIT), a fundamental phenomenon whose understanding has remained a challenge for over 50 years. A key issue is how the wave-like itinerant electrons change into a localized-like state due to increased interactions. However, observing the MIT in terms of the energy- and momentum-resolved electronic structure of the system, the only direct way to probe both itinerant and localized states, has been elusive. Here we show, using angle-resolved photoemission spectroscopy (ARPES), that in V2O3, the temperature-induced MIT is characterized by the progressive disappearance of its itinerant conduction band, without any change in its energy-momentum dispersion, and the simultaneous shift to larger binding energies of a quasi-localized state initially located near the Fermi level.

In matter, any spontaneous symmetry breaking induces a phase transition characterized by an order parameter, such as the magnetization vector in ferromagnets, or a macroscopic many-electron wave function in superconductors. Phase transitions with unknown order parameter are rare but extremely appealing, as they may lead to novel physics. An emblematic and still unsolved example is the transition of the heavy fermion compound [Formula: see text] (URS) into the so-called hidden-order (HO) phase when the temperature drops below [Formula: see text] K. Here, we show that the interaction between the heavy fermion and the conduction band states near the Fermi level has a key role in the emergence of the HO phase. Using angle-resolved photoemission spectroscopy, we find that while the Fermi surfaces of the HO and of a neighboring antiferromagnetic (AFM) phase of well-defined order parameter have the same topography, they differ in the size of some, but not all, of their electron pockets. Such a nonrigid change of the electronic structure indicates that a change in the interaction strength between states near the Fermi level is a crucial ingredient for the HO to AFM phase transition.

The scope of this article is to review the state-of-the-art in the field of confined electron systems generated at the bare surfaces of transition metal oxides (TMOs). This scientific field is a prime example of a domain where two-dimensional physics and photoemission-based spectroscopic techniques have together set up the development of the story. The discovery of a high-mobility two-dimensional electron system (2DES) at interfaces of transition metal oxides has attracted an immense scientific interest due to new opportunities opened in the emerging field of oxide electronics. The subsequent paradigm shift from interfaces to the bare surfaces of TMOs made the confined electron system accessible to surface-sensitive spectroscopic techniques and this new era is the focus of the present article. We describe how results by means of Angle-Resolved Photoemission Spectroscopy (ARPES) establish the presence of confined electron carriers at the bare surface of SrTiO$_{3}$(100), which exhibit complex physics phenomena such as orbital ordering, electron-phonon interactions and spin splitting. The key element behind the 2DES generation is oxygen vacancies. Moreover, we review the experimental evidence on the generation of 2DESs on surfaces with different orientation, as well as on different TMO substrates. The electronic structure of the confined electron system responds to such changes, thereby providing external means for engineering its properties. Finally, we identify new directions for future research by introducing a device-friendly fabrication protocol for the generation of 2DESs on TMO surfaces., Comment: review on 2D electron gases on bare oxide surfaces: 15 pages, 11 figures

Physical review / B 101(8), 085121 (1-10) (2020). doi:10.1103/PhysRevB.101.085121, We report the observation of a two-dimensional electron system (2DES) at the (110) surface of the transparent bulk insulator SnO$_2$ and the tunability of its carrier density by means of temperature or Eu deposition. The 2DES is insensitive to surface reconstructions and, surprisingly, it survives even after exposure to ambient conditions—an extraordinary fact recalling the well known catalytic properties SnO$_2$. Our data show that surface oxygen vacancies are at the origin of such 2DES, providing key information about the long-debated origin of n-type conductivity in SnO$_2$, at the basis of a wide range of applications. Furthermore, our study shows that the emergence of a 2DES in a given oxide depends on a delicate interplay between its crystal structure and the orbital character of its conduction band., Published by Inst., Woodbury, NY

Strong electron correlations in rare earth hexaborides can give rise to a variety of interesting phenomena like ferromagnetism, Kondo hybridization, mixed valence, superconductivity and possibly topological characteristics. The theoretical prediction of topological properties in SmB$_{6}$ and YbB$_{6}$, has rekindled the scientific interest in the rare earth hexaborides, and high-resolution ARPES has been playing a major role in the debate. The electronic band structure of the hexaborides contains the key to understand the origin of the different phenomena observed, and much can be learned by comparing the experimental data from different rare earth hexaborides. We have performed high-resolution ARPES on the (001) surfaces of YbB$_{6}$, CeB$_{6}$ and SmB$_{6}$. On the most basic level, the data show that the differences in the valence of the rare earth element are reflected in the experimental electronic band structure primarily as a rigid shift of the energy position of the metal 5$\textit{d}$ states with respect to the Fermi level. Although the overall shape of the $\textit{d}$-derived Fermi surface contours remains the same, we report differences in the dimensionality of these states between the compounds studied. Moreover, the spectroscopic fingerprint of the 4$\textit{f}$ states also reveals considerable differences that are related to their coherence and the strength of the $\textit{d}$-$\textit{f}$ hybridization. For the SmB$_6$ case, we use ARPES in combination with STM imaging and electron diffraction to reveal time dependent changes in the structural symmetry of the highly debated SmB$_{6}$(001) surface. All in all, our study highlights the suitability of electron spectroscopies like high-resolution ARPES to provide links between electronic structure and function in complex and correlated materials such as the rare earth hexaborides., Comment: 10 pages, 5 figures

We report a high-field magnetotransport study on selected low-carrier crystals of the topological insulator Bi2−xSbxTe3−ySey. Monochromatic Shubnikov–de Haas (SdH) oscillations are observed at 4.2 K and their two-dimensional nature is confirmed by tilting the magnetic field with respect to the sample surface. With the help of Lifshitz–Kosevich theory, important transport parameters of the surface states are obtained, including the carrier density, cyclotron mass and mobility. For ( x , y ) = ( 0.50 , 1.3 ) the Landau level plot is analyzed in terms of a model based on a topological surface state in the presence of a non-ideal linear dispersion relation and a Zeeman term with gs=70 or − 54 . Input parameters were taken from the electronic dispersion relation measured directly by angle resolved photoemission spectroscopy on crystals from the same batch. The Hall resistivity of the same crystal (thickness of 40 μm) is analyzed in a two-band model, from which we conclude that the ratio of the surface conductance to the total conductance amounts to 32%.

In materials with nearly commensurate band filling the electron liquid may spontaneously separate into components with distinct properties, yielding complex intra- and interunit cell ordering patterns and a reduced dimensionality. Polarization-dependent angle-resolved photoemission data with submicron spatial resolution demonstrate such an electronic self-organization in NbSe3, a compound considered to be a paradigm of charge order. The new data indicate the emergence of a novel order, and reveal the one-dimensional (1D) physics hidden in a material which naively could be considered the most three dimensional of all columnar chalcogenides. The 1D physics is evidenced by a new selection rule—in two polarizations we observe two strikingly different dispersions each closely resembling apparently contradicting results of previous studies of this material., The work at Lausanne and Geneva is supported by the Swiss NSF. M.A.V. acknowledges financial support from Spanish MICIN Postdoctoral Mobility Program. S.P. acknowledges C’NANO Ile-de-France, DIM NanoK, for the support of the Nanospecs project. Work in Spain was supported by a MINECO (Grants FIS2015-64886-C5-4-P and CTQ2015-64579-C3-3-P), Generalitat de Catalunya (2017SGR1506 and 2017SGR1289), and XRQTC. E.C. acknowledges support from MINECO through the Severo Ochoa Centers of Excellence Program under Grant No. SEV-2015-0496. ICN2 is funded by the CERCA Program/ Generalitat de Catalunya, and supported by the Severo Ochoa program from Spanish MINECO (Grant No. SEV- 2017-0706). P.A. acknowledges support from the Maria de Maeztu Units of Excellence Program under Grant MDM- 2017-0767. S.C. gratefully acknowledges the Becas Chile program (CONICYT PAI/INDUSTRIA 72090772) for a doctoral grant at the Universitat de Barcelona. Synchrotron SOLEIL is supported by the Centre National de la Recherche Scientifique (CNRS) and the Commissariat à l’Energie Atomique et aux energies Alternatives (CEA).

We create a two-dimensional electron system (2DES) at the interface between EuO, a ferromagnetic insulator, and ${\mathrm{SrTiO}}_{3}$, a transparent nonmagnetic insulator considered the bedrock of oxide-based electronics. This is achieved by a controlled in situ redox reaction between pure metallic Eu deposited at room temperature on the surface of ${\mathrm{SrTiO}}_{3}$---an innovative bottom-up approach that can be easily generalized to other functional oxides and scaled to applications. Additionally, we find that the resulting EuO capping layer can be tuned from paramagnetic to ferromagnetic, depending on the layer thickness. These results demonstrate that the simple, novel technique of creating 2DESs in oxides by deposition of elementary reducing agents [T. C. R\"odel et al., Adv. Mater. 28, 1976 (2016)] can be extended to simultaneously produce an active, e.g., magnetic, capping layer enabling the realization and control of additional functionalities in such oxide-based 2DESs.

International audience; The main scientific activity in the field of topological insulators (TIs) consists of determining their electronic structure by means of magnetotransport and electron spectroscopy with a view to devices based on topological transport. There is, however, a caveat in this approach. There are systematic experimental discrepancies on the electronic structure of the most pristine surfaces of TI single crystals as determined by Shubnikov–de Haas oscillations and by angle-resolved photoelectron spectroscopy (ARPES). We identify intense ultraviolet illumination—that is inherent to an ARPES experiment—as the source for these experimental differences. We explicitly show that illumination is the key parameter, or in other words, the trigger, for energetic shifts of electronic bands near the surface of a TI crystal. This finding revisits the common belief that surface decoration is the principal cause of surface band bending and explains why band bending is not a prime issue in illumination-free magnetotransport studies. Our study further clarifies the role of illumination on the electronic band structure of TIs by revealing its dual effect: downward band bending on very small time scales followed by band flattening at large time scales. Our results therefore allow us to present and predict the complete evolution of the band structure of TIs in a typical ARPES experiment. By virtue of our findings, we pinpoint two alternatives of how to approach flat-band conditions by means of photon-based techniques and we suggest a microscopic mechanism that can explain the underlying phenomena.

We study the effect of oxygen vacancies on the electronic structure of the model strongly correlated metal SrVO$_3$. By means of angle-resolved photoemission (ARPES) synchrotron experiments, we investigate the systematic effect of the UV dose on the measured spectra. We observe the onset of a spurious dose-dependent prominent peak at an energy range were the lower Hubbard band has been previously reported in this compound, raising questions on its previous interpretation. By a careful analysis of the dose dependent effects we succeed in disentangling the contributions coming from the oxygen vacancy states and from the lower Hubbard band. We obtain the intrinsic ARPES spectrum for the zero-vacancy limit, where a clear signal of a lower Hubbard band remains. We support our study by means of state-of-the-art ab initio calculations that include correlation effects and the presence of oxygen vacancies. Our results underscore the relevance of potential spurious states affecting ARPES experiments in correlated metals, which are associated to the ubiquitous oxygen vacancies as extensively reported in the context of a two-dimensional electron gas (2DEG) at the surface of insulating $d^0$ transition metal oxides., Comment: Manuscript + Supplemental Material, 12 pages, 9 figures

Atomic nanowires on semiconductor surfaces induced by the adsorption of metallic atoms have attracted a lot of attention as possible hosts of the elusive, Tomonaga-Luttinger liquid. The Au/Ge(100) system in particular is the subject of controversy as to whether the Au-induced nanowires do indeed host exotic, 1D metallic states. We report on a thorough study of the electronic properties of high quality nanowires formed at the Au/Ge(100) surface. High resolution ARPES data show the low-lying Au-induced electronic states to possess a dispersion relation that depends on two orthogonal directions in k-space. Comparison of the E(k$_x$,k$_y$) surface measured using ARPES to tight-binding calculations yields hopping parameters in the two different directions that differ by a factor of two. We find that the larger of the two hopping parameters corresponds, in fact, to the direction perpendicular to the nanowires (t$_{\perp}$). This, the topology of the $E$=$E_F$ contour in k$_{\||}$, and the fact that $t_{\||}$/$t_{\perp}\sim 0.5$ proves that the Au-induced electron pockets possess a 2D, closed Fermi surface, this firmly places the Au/Ge(100) nanowire system outside being a potential hosts of a Tomonaga-Luttinger liquid. We combine these ARPES data with STS measurements of the spatially-resolved electronic structure and find that the spatially straight conduction channels observed up to energies of order one electron volt below the Fermi level do not originate from the Au-induced states seen in the ARPES data. The former are more likely to be associated with bulk Ge states that are localized to the subsurface region. Despite our proof of the 2D nature of the Au-induced nanowire and sub-surface Ge-related states, an anomalous suppression of the density of states at the Fermi level is observed in both the STS and ARPES data, this phenomenon is discussed in the light of the effects of disorder., 17 pages, 8 figures

We discuss two different approaches for tuning the giant spin-orbit splitting of a BiAg2 surface alloy. The first approach consists of electron doping by alkaline metal deposition in order to shift the energy position of the spin-split surface states, while the second is based on the novel Si(1 1 1)-Ag-BiAg2 trilayer system. In both cases the spin-polarized structure near the Fermi level can be controlled by an external parameter, while the second approach permits coupling the concept of giant spin-splitting with a semiconducting substrate. (C) 2010 Elsevier B.V. All rights reserved.

We present Angle-Resolved Photoelectron Spectroscopy (ARPES) data on spin-orbit split states in two XAg2 surface alloys grown on an Ag(111) substrate, and of the Si(111)-AgBiAg2 trilayer system. We briefly discuss the origin of the unusually large energy and momentum splitting, and the possibility of tuning by surface engineering the spin polarization at the Fermi level. [DOI: 10.1380/ejssnt.2009.264]

International audience; SmB6 is a mixed valence Kondo system resulting from the hybridization between localized f electrons and delocalized d electrons. We have investigated its out-of-equilibrium electron dynamics by means of time- and angle-resolved photoelectron spectroscopy. The transient electronic population above the Fermi level can be described by a time-dependent Fermi-Dirac distribution. By solving a two-temperature model that well reproduces the relaxation dynamics of the effective electronic temperature, we estimate the electron-phonon coupling constant lambda to range from 0.13 +/- 0.03 to 0.04 +/- 0.01. These extremes are obtained assuming a coupling of the electrons with either a phonon mode at 10 or 19 meV. A realistic value of the average phonon energy will give an actual value of lambda within this range. Our results provide an experimental report on the material electron-phonon coupling, contributing to both the electronic transport and the macroscopic thermodynamic properties of SmB6.

International audience; 2D electron systems (2DESs) in functional oxides are promising for applications, but their fabrication and use, essentially limited to SrTiO3-based heterostructures, are hampered by the need for growing complex oxide overlayers thicker than 2 nm using evolved techniques. It is demonstrated that thermal deposition of a monolayer of an elementary reducing agent suffices to create 2DESs in numerous oxides.

Combined in situ x-ray photoemission spectroscopy, scanning tunneling spectroscopy, and angle resolved photoemission spectroscopy of molecular beam epitaxy grown Bi 2 Te 3 on lattice mismatched substrates reveal high quality stoichiometric thin films with topological surface states without a contribution from the bulk bands at the Fermi energy. The absence of bulk states at the Fermi energy is achieved without counterdoping. We observe that the surface morphology and electronic band structure of Bi 2 Te 3 are not affected by in vacuo storage and exposure to oxygen, whereas major changes are observed when exposed to ambient conditions. These films help define a pathway towards intrinsic topological devices.

The polaron is a quasi-particle formed by a conduction electron (or hole) together with its self-induced polarization in a polar semiconductor or an ionic crystal. Among various polarizable examples of complex oxides, strontium titanate (SrTiO3) is one of the most studied. Here we examine the carrier type and the interplay of inner degrees of freedom (for example, charge, lattice, orbital) in SrTiO3. We report the experimental observation of Fröhlich polarons, or large polarons, at the bare SrTiO3 surface prepared by vacuum annealing. Systematic analyses of angle-resolved photoemission spectroscopy and X-ray absorption spectra show that these Fröhlich polarons are two-dimensional and only exist with inversion symmetry breaking by two-dimensional oxygen vacancies. Our discovery provides a rare solvable field theoretical model, and suggests the relevance of large (bi)polarons for superconductivity in perovskite oxides, as well as in high-temperature superconductors., A polaron is a quasiparticle formed through the strong interaction between an electron and the ions in a crystalline solid. Here, the authors observe Fröhlich polarons, formed by the coupling of electrons and long-wavelength optical phonons, in strontium titanate.

Topological insulators are a novel materials platform with high applications potential in fields ranging from spintronics to quantum computation. In the ongoing scientific effort to demonstrate controlled manipulation of their electronic structure by external means - i.e the provision of knobs with which to tune properties - stoichiometric variation and surface decoration are two effective approaches that have been followed. In angle resolved photoelectron spectroscopy (ARPES) experiments, both approaches are seen to lead to electronic band structure changes. Most importantly, such approaches result in variations of the energy position of bulk and surface-related features and the creation of two-dimensional electron gases. The data presented here demonstrate that a third manipulation handle is accessible by utilizing the amount of super-band-gap light a topologicalinsulator surface has been exposed to under typical ARPES experimental conditions. Our results show that this new, third, knob acts on an equal footing with stoichiometry and surface decoration as a modifier of the electronic band structure, and that it is in continuous and direct competition with the latter. The data clearly point towards surface photovoltage and photo-induced desorption as the physical phenomena behind modificationsof the electronic band structure under exposure to high-flux photons. We show that the interplay of these phenomena can minimize and even eliminate the adsorbate-related surface band bending on typical binary, ternary and quaternary Bi-based topological insulators. Including the influence of the sample temperature, these data set up a detailed framework for the external control of the electronic band structure in topological insulatorcompounds in an ARPES setting. Four external knobs are available: bulk stoichiometry, surface decoration, temperature and photon exposure. These knobs can be used in conjunction to fine-tune the band energies near the surface and consequently influence the topological properties of the relevant electronic states.

In an ideal 3D topological insulator (TI), the bulk is insulating and the surface conducting due to the existence of metallic states that are localized on the surface; these are the topological surface states. Quaternary Bi-based compounds of Bi$_{2-x}$Sb$_{x}$Te$_{3-y}$Se$_{y}$ with finely-tuned bulk stoichiometries are good candidates for realizing ideal 3D TI behavior due to their bulk insulating character. However, despite its insulating bulk in transport experiments, the surface region of Bi$_{2-x}$Sb$_{x}$Te$_{3-y}$Se$_{y}$ crystals cleaved in ultrahigh vacuum also exhibits occupied states originating from the bulk conduction band. This is due to adsorbate-induced downward band-bending, a phenomenon known from other Bi-based 3D TIs. Here we show, using angle-resolved photoemission, how an EUV light beam of moderate flux can be used to exclude these topologically trivial states from the Fermi level of Bi$_{1.46}$Sb$_{0.54}$Te$_{1.7}$Se$_{1.3}$ single crystals, thereby re-establishing the purely topological character of the low lying electronic states of the system. We furthermore prove that this process is highly local in nature in this bulk-insulating TI, and are thus able to imprint structures in the spatial energy landscape at the surface. We illustrate this by `writing' micron-sized letters in the Dirac point energy of the system., 7 pages, 3 figures, includes Supplementary Information

We report high-resolution angle-resolved photoelectron spectroscopy (ARPES) results on the (001) cleavage surface of ${\mathrm{YbB}}_{6}$, a rare-earth compound that has been recently predicted to host surface electronic states with topological character. We observe two types of well-resolved metallic states, whose Fermi contours encircle the time-reversal invariant momenta of the ${\mathrm{YbB}}_{6}(001)$ surface Brillouin zone, and whose full $E(k)$ dispersion relation can be measured wholly unmasked by states from the rest of the electronic structure. Although the two-dimensional character of these metallic states is confirmed by their lack of out-of-plane dispersion, our work reveals two aspects which were not observed in previous experiments. First, these states do not resemble two branches of opposite, linear velocity that cross at a Dirac point, but rather straightforward parabolas that terminate to high binding energy with a clear band bottom. Secondly, these states are sensitive to time-dependent changes of the ${\mathrm{YbB}}_{6}$ surface under ultrahigh-vacuum conditions. Adding the fact that these data from cleaved ${\mathrm{YbB}}_{6}$ surfaces also display spatial variations in the electronic structure, it appears there is little in common between the theoretical expectations for an idealized ${\mathrm{YbB}}_{6}(001)$ crystal truncation on the one hand, and these ARPES data from real cleavage surfaces on the other.

SmB6, a well-known Kondo insulator, has been proposed to be an ideal topological insulator with states of topological character located in a clean, bulk electronic gap, namely the Kondo hybridisation gap. Seeing as the Kondo gap arises from many body electronic correlations, this would place SmB6 at the head of a new material class: topological Kondo insulators. Here, for the first time, we show that the k-space characteristics of the Kondo hybridisation process is the key to unravelling the origin of the two types of metallic states observed directly by ARPES in the electronic band structure of SmB6(001). One group of these states is essentially of bulk origin, and cuts the Fermi level due to the position of the chemical potential 20 meV above the lowest lying 5d-4f hybridisation zone. The other metallic state is more enigmatic, being weak in intensity, but represents a good candidate for a topological surface state. However, before this claim can be substantiated by an unequivocal measurement of its massless dispersion relation, our data raises the bar in terms of the ARPES resolution required, as we show there to be a strong renormalisation of the hybridisation gaps by a factor 2-3 compared to theory, following from the knowledge of the true position of the chemical potential and a careful comparison with the predictions from recent LDA+Gutzwiler calculations. All in all, these key pieces of evidence act as triangulation markers, providing a detailed description of the electronic landscape in SmB6, pointing the way for future, ultrahigh resolution ARPES experiments to achieve a direct measurement of the Dirac cones in the first topological Kondo insulator., 9 pages, 4 Figures and supplementary material (including Movies and CORPES13 "best prize" poster)

The surface of a ferroelectric BaTiO${}_{3}$(001) single crystal was studied using synchrotron radiation induced x-ray photoelectron diffraction (XPD), x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and low-energy electron diffraction (LEED). AFM, XPS, and LEED show that the surface is BaO terminated with a (1$\ifmmode\times\else\texttimes\fi{}$1) reconstruction. The Ba $4d$, Ti $2p$, and O $1s$ XPD results were compared with multiple scattering simulations for out-of- (${\mathrm{P}}^{+},{\mathrm{P}}^{\ensuremath{-}}$) and in-plane (${\mathrm{P}}^{in}$) polarizations using a genetic algorithm to determine atomic rumpling and interlayer relaxation. Linear combinations of the XPD simulations of the surface structure of each polarization state allow determination of the domain ordering. The best agreement with experiment is found for 55$%$ ${\mathrm{P}}^{+}$, 38$%$ ${\mathrm{P}}^{\ensuremath{-}}$, and 7$%$ ${\mathrm{P}}^{in}$. The rumpling is smaller at the surface than in the bulk, suggesting that both domain ordering and surface structural changes contribute to screening of the polarization.

International audience; By combining angle-resolved photoemission spectroscopy and scanning tunneling microscopy we reveal the structural and electronic properties of multilayer graphene on Ru(0001). We prove that large ethylene exposure allows the synthesis of two distinct phases of bilayer graphene with different properties. The first phase has Bernal AS stacking with respect to the first graphene layer and displays weak vertical interaction and electron doping. The long-range ordered moire pattern modulates the crystal potential and induces replicas of the Dirac cone and minigaps. The second phase has an AA stacking sequence with respect to the first layer and displays weak structural and electronic modulation and p-doping. The linearly dispersing Dirac state reveals the nearly freestanding character of this novel second-layer phase.

The electronic band structure of MoS${}_{2}$ single crystals has been investigated using angle-resolved photoelectron spectroscopy and first-principles calculations. The orbital symmetry and $k$ dispersion of these electronic states responsible for the direct and the indirect electronic band gaps have been unambiguously determined. By experimentally probing an increase of the electronic band gap, we conclude that a MoS${}_{2}$ (0002) surface localized state exists just below the valence band maximum at the $\ensuremath{\Gamma}$ point. This electronic state originates from the sulfur planes within the topmost layer. Our comprehensive study addresses the surface electronic structure of MoS${}_{2}$ and the role of van der Waals interlayer interactions.

Because of its unique physical properties, graphene, a 2D honeycomb arrangement of carbon atoms, has attracted tremendous attention. Silicene, the graphene equivalent for silicon, could follow this trend, opening new perspectives for applications, especially due to its compatibility with Si-based electronics. Silicene has been theoretically predicted as a buckled honeycomb arrangement of Si atoms and having an electronic dispersion resembling that of relativistic Dirac fermions. Here we provide compelling evidence, from both structural and electronic properties, for the synthesis of epitaxial silicene sheets on a silver (111) substrate, through the combination of scanning tunneling microscopy and angular-resolved photoemission spectroscopy in conjunction with calculations based on density functional theory.

The structural and electronic properties of thermally reduced SrTiO${}_{3}$(100) single crystals have been investigated using a probe with real- and reciprocal-space sensitivity: a synchrotron radiation microsopic setup which offers the possibility of scanning photoemission microscopy and angle-resolved photoelectron spectroscopy (ARPES) down to the nanometric scale. We have spectroscopically imaged the chemical composition of samples presenting reproducible and suitable low-energy diffraction patterns after following well-established thermal reduction protocols. At the micrometric scale, Ca-rich areas have been directly imaged using high-energy resolution core-level photoemission. Moreover, we have monitored the effect of Ca segregation on different features of the SrTiO${}_{3}$(100) electronic band structure, measuring ARPES inside, outside, and at the interface of surface inhomogeneities with the Ca-rich identified areas. In particular, the interaction of Ca with the well-known intragap localized state, previously attributed to oxygen vacancies, has been investigated. Moreover, the combination of direct imaging and spectroscopic techniques with high spatial resolution has clarified the long-standing dilemma related to the bulk or surface character of Ca segregation in SrTiO${}_{3}$. Our results present solid evidence that the penetration depth of Ca segregation is very small. In contrast to what has been previously proposed, the origin of the long-range surface reconstructions can unlikely be associated to Ca due to strong local variations of its surface concentration.

We present a detailed analysis of the band structure of the root 3 x root 3 R 30 degrees BiAg2/Ag/Si(111) trilayer system by means of high resolution Angle Resolved Photoemission Spectroscopy (ARPES). BiAg2/Ag/Si(111) exhibits a complex spin-polarized electronic structure due to giant spin-orbit interactions. We show that a complete set of constant energy ARPES maps, supplemented by a modified nearly free electron calculation, provides a unique insight into the structure of the spin-polarized bands and spin gaps. We also show that the complex gap structure can be continuously tuned in energy by a controlled deposition of an alkali metal.

The spectroscopy of quasi-one-dimensional (1D) systems has been a subject of strong interest since the first experimental observations of unusual line shapes in the early 1990s. Angle-resolved photoemission (ARPES) measurements performed with increasing accuracy have greatly broadened our knowledge of the properties of bulk 1D materials and, more recently, of artificial 1D structures. They have yielded a direct view of 1D bands, of open Fermi surfaces, and of characteristic instabilities. They have also provided unique microscopic evidence for the non-conventional, non-Fermi-liquid, behavior predicted by theory, and for strong and singular interactions. Here we briefly review some of the remarkable experimental results obtained in the last decade.

We studied by angle-resolved photoelectron spectroscopy the strain-related structural transition from a pseudomorphic monolayer (ML) to a striped incommensurate phase in an Ag thin film grown on Pt(111). We exploited the surfactant properties of Bi to grow ordered Pt(111)-xMLAg-Bi trilayers with 0 < x < 5 ML, and monitored the dispersion of the Bi-derived interface states to probe the structure of the underlying Ag film. We find that their symmetry changes from threefold to sixfold and back to threefold in the Ag coverage range studied. Together with previous scanning tunneling microscopy and photoelectron diffraction data, these results provide a consistent microscopic description of the coverage-dependent structural transition., 10 pages, 9 figures

Spin polarized two-dimensional electronic states have been previously observed on metallic surface alloys with giant Rashba splitting and on the surface of topological insulators. We study the surface band structure of these systems, in a unified manner, by exploiting recent results of k.p theory. The model suggests a different way to address the effect of anisotropy in Rashba systems. Changes in the surface band structure of various Rashba compounds can be captured by a single effective parameter which quantifies the competition between the Rashba effect and the hexagonal warping of the constant energy contours. The same model provides a unified phenomenological description of the surface states belonging to materials with topologically trivial and non-trivial band structures., Comment: 8 pages, 4 figures, 1 table

The Bi/Si(111) (sqrt{3} x sqrt{3})R30 trimer phase offers a prime example of a giant spin-orbit splitting of the electronic states at the interface with a semiconducting substrate. We have performed a detailed angle-resolved photoemission (ARPES) study to clarify the complex topology of the hybrid interface bands. The analysis of the ARPES data, guided by a model tight-binding calculation, reveals a previously unexplored mechanism at the origin of the giant spin-orbit splitting, which relies primarily on the underlying band structure. We anticipate that other similar interfaces characterized by trimer structures could also exhibit a large effect., 11 pages, 13 figures

We demonstrate the induction of a giant Rashba-type spin-splitting on a semiconducting substrate by means of a Bi trimer adlayer on a Si(111) wafer. The in-plane inversion symmetry is broken so that the in-plane potential gradient induces a giant spin-splitting with a Rashba energy of about 140 meV, which is more than an order of magnitude larger than what has previously been reported for any semiconductor heterostructure. The separation of the electronic states is larger than their lifetime broadening, which has been directly observed with angular resolved photoemission spectroscopy. The experimental results are confirmed by relativistic first-principles calculations. We envision important implications for basic phenomena as well as for the semiconductor based technology.

We have studied the interplay of a giant spin-orbit splitting and of quantum confinement in artificial Bi-Ag-Si trilayer structures. Angle-resolved photoelectron spectroscopy (ARPES) reveals the formation of a complex spin-dependent gap structure, which can be tuned by varying the thickness of the Ag buffer layer. This provides a means to tailor the electronic structure at the Fermi energy, with potential applications for silicon-compatible spintronic devices.

In 3D topological insulators achieving a genuine bulk-insulating state is an important research topic. Recently, the material system (Bi,Sb)$_{2}$(Te,Se)$_{3}$ (BSTS) has been proposed as a topological insulator with high resistivity and a low carrier concentration (Ren \textit{et al.} \cite{Ren2011}). Here we present a study to further refine the bulk-insulating properties of BSTS. We have synthesized Bi$_{2-x}$Sb${_x}$Te$_{3-y}$Se$_{y}$ single crystals with compositions around $x = 0.5$ and $y = 1.3$. Resistance and Hall effect measurements show high resistivity and record low bulk carrier density for the composition Bi$_{1.46}$Sb$_{0.54}$Te$_{1.7}$Se$_{1.3}$. The analysis of the resistance measured for crystals with different thicknesses within a parallel resistor model shows that the surface contribution to the electrical transport amounts to 97% when the sample thickness is reduced to $1 \mu$m. The magnetoconductance of exfoliated BSTS nanoflakes shows 2D weak antilocalization with $\alpha \simeq -1$ as expected for transport dominated by topological surface states., Comment: 16 pages, 6 figures, accepted for publication in New Journal of Physics