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We report the magnetic field detection properties of ballistic sensors utilizing the negative bend resistance of InSb∕In(1-x)Al(x)Sb quantum well cross junctions as a function of temperature and geometric size. We demonstrate that the maximum responsivity to magnetic field and its linearity increase as the critical device dimension is reduced. This observation deviates from the predictions of the classical billiard ball model unless significant diffuse boundary scattering is included. The smallest device studied has an active sensor area of 35×35 nm(2), with a maximum responsivity of 20 kΩ∕T, and a noise-equivalent field of 0.87μT∕Hz at 100 K.

We report the optical measurement of the spin dynamics at elevated temperatures and in zero magnetic field for two types of degenerately doped n-InSb quantum wells (QWs), one asymmetric (sample A) and one symmetric (sample B) with regards to the electrostatic potential across the QW. Making use of three directly determined experimental parameters: the spin lifetime, τ(s), the sheet carrier concentration, n, and the electron mobility, μ, we directly extract the zero-field spin splitting. For the asymmetric sample where the Rashba interaction is the dominant source of spin splitting, we deduce a room temperature Rashba parameter of α = 0.09 ± 0.1 eV Å which is in good agreement with calculations and we estimate the Rashba coefficient α(0) (a figure of merit for the ease with which electron spins can be modulated via an electric field). We review the merits/limitations of this approach and the implications of our findings for spintronic devices.