Search

At room temperature, we consider the transport properties in the magnetic spin-valve for electronic current-in-plane of the surfaces. The transport properties are treated by solving the Boltzmann equation. We discuss, in this study, the influence of interface quality on trends in residual resistivities of the two magnetic configurations and giant magnetoresistance effect while introducing the different aspects of phenomenological electron scattering. The scattering by vacuum-metal-free surfaces is assumed to be completely specular. The present results emphasize that the conduction electron transport in the case of ultra-thin films is strongly affected by an uncorrelated interface state. The examination of the angular dependence on the interface parameters helped us to understand all the results obtained. [ABSTRACT FROM AUTHOR]

Spin - valves (SVs) constitute a significant class of magnetic metal structures with a large range of technological applications. This class of structure offers interesting magnetic properties due to their alternation with the non - magnetic layers. The SVs fortunately have good magnetic properties at room temperature (RT). This study intends to use Boltzmann Approach–BA, to treat the magetotransport properties of Co-based SV. Outer - surface scattering effects on magnetoresistance (MR) performance encountered in these structures are investigated by varying the interfacial chemical composition. Analysis of the results reveals the existence of a significant improvement of magnetic phenomenon for a scattering that is more and more specular of the conduction electrons through outer - surface. A giant MR (GMR) of amplitude 136.9 % is obtained for an interfacial geometric roughness of magnitude 2 Å. The GMR ratio is the result of large asymmetry in the spin - dependent interfacial scattering and a completely specular outer - surface scattering. [ABSTRACT FROM AUTHOR]