1. Photoluminescence Features of Few-Layer Hexagonal $\alpha$-In$_2$Se$_3$
- Author
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Eliseyev, I. A., Veretennikov, A. I., Galimov, A. I., Kotova, L. V., Osochenko, G. V., Gasnikova, K. A., Kirilenko, D. A., Yagovkina, M. A., Salii, Yu. A., Davydov, V. Yu., Alekseev, P. A., and Rakhlin, M. V.
- Subjects
Condensed Matter - Materials Science ,Condensed Matter - Mesoscale and Nanoscale Physics - Abstract
Indium (III) selenide is currently one of the most actively studied materials in the two-dimensional family due to its remarkable ferroelectric and optical properties. This study focuses on the luminescent properties of few-layer In$_2$Se$_3$ flakes with thicknesses ranging from 7 to 100 monolayers. To explore the photoluminescence features and correlate them with changes in crystal symmetry and surface potential, we employed a combination of techniques, including temperature-dependent micro-photoluminescence, time-resolved photoluminescence, Raman spectroscopy, atomic force microscopy, and Kelvin probe force microscopy. X-ray diffraction and Raman spectroscopy confirmed that the samples studied possess the $\alpha$-polytype structure. The micro-photoluminescence spectrum consists of two bands, A and B, with band B almost completely disappearing at room temperature. Temperature-dependent photoluminescence and time-resolved measurements helped us to elucidate the nature of the observed bands. We find that peak A is associated with emission from interband transitions in In$_2$Se$_3$, while peak B is attributed to defect-related emission. Additionally, the photoluminescence decay times of In$_2$Se$_3$ flakes with varying thicknesses were determined. No significant changes were observed in the decay components as the thickness increased from 7 to 100 monolayers, suggesting that there are no qualitative changes in the band structure.
- Published
- 2025