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Respiratory illness is a constant threat for military personnel due to crowded and stressful occupational conditions.1 Respiratory infections are among the leading causes of ambulatory visits and hospitalizations for active duty service members. It is also one of the leading causes of ambulatory clinic visits and absenteeism from work and school in the United States (US).2,3 This study used electronic clinical laboratory data to describe bacterial respiratory infections from October 2008 to September 2013, among all Department of Defense (DOD) beneficiaries seeking care within the Military Health System (MHS). Data were analyzed by fiscal year (FY), October 01 through September 30. Upper respiratory infections (URIs) displayed seasonal trends, occurring more frequently in fall and winter months. URIs occurred more frequently in the first two years of the study period (FY 2009 and FY 2010) than in the last three years of the study period. Lower respiratory infections (LRIs) declined since 2008 and lacked seasonal trends. Overall, URIs and LRIs declined by 36% and 23%, respectively, from FY 2009 to FY 2013. Additionally, there were significant changes in the demographic and clinical characteristics of URIs and LRIs. Beneficiaries 5-17 years of age were consistently most impacted by URIs, whereas those 45 years of age and older had the highest rates of LRIs. Periodic monitoring contributes to risk reduction by tracking trends and identifying populations that exceed baseline, which may help to mitigate increased risk of morbidity and mortality, given the occupational realities of DOD personnel.

The graduate fellowship was first held by Dan Stamper-Kurn from October 1997 until his graduation on February 1, 2000 and then by Ananth Chikkatur from September 1, 2000 until October 14, 2001. The following papers were published by those two students during the time they were supported by the JSEP fellowship

This is the final report of the research conducted at Stanford Electronics Laboratories under the sponsorship of the Joint Services Electronics Program from March 1 1997 through March 31 2001. This report summarizes the areas of research. identifies the most significant results and lists the dissertations. publications and presentations sponsored by the contract DAAG55-97-1-0115.

This paper reports on two cases in which Head Mounted Display (HMD) based Virtual Environments (VE) are applied to military training. The first case deals with Forward Air Controller training, while the second case is aimed at Stinger training. Both applications are subjects of study within the VE research program of the TNO Physics and Electronics Laboratory and the TNO Human Factors Research Institute. For the Forward Air Controller (FAC) training application a feasibility study was recently performed. Based upon a task and training analysis, a prototype FAC training simulator was developed and evaluated. Evaluation results have encouraged both the Dutch armed forces and other NATO countries (United Kingdom, Belgium) to seriously consider the HMD based FAC simulator as a useful and effective training tool. The paper describes the simulator prototype and evaluation results, including the human factors issues that were addressed in this study. The Stinger training application is still in an early stage of development. Instigated by a demand of the Royal Netherlands Air Force, the research is focused on finding a suitable concept for a mobile training device. The paper describes a planned project (to start in 1998) that includes the development of an experimental system in order to evaluate several design alternatives. The evaluation has as a goal to determine how human performance is affected by the type of display system that is used, the overall system latency and the tracking accuracy., Presented at the RTO Human Factors and Medicine Panel Workshop, Orlando FL, 5-9 Dec 1997,p25-1/25-11. This article is from ADA388966 The Capability of Virtual Reality to Meet Military Requirements (la Capacite de la rea1ite virtuelle a repondre aux besoins militaires)

Our long-term goals are twofold. First, to explore the new properties of gaseous Bose-Einstein condensates and advance our understanding of quantum gases. Second, we want to use Bose condensed gases as new atom sources of unprecedented brightness ("atom lasers") for precision atom optics and precision metrology.

The last year, aided by the Graduate Fellowship I received from the Joint Services Electronics Program, has been a fruitful one. In the following, I summarize the progress I have made in my education and research.

National leaders praised wartime research and development efforts and agreed that peacetime R&D was vital to the nation. After the war, organization of research changed. The Navy bureaus took over management as well as sponsoring of the laboratories. In San Diego, NRSL and UCDWR became the, Navy Electronics Laboratory (NEL). In Pasadena, the facilities previously operated as part of Caltech's wartime rocket and torpedo development work were transferred to become the NOTS Pasadena annex. NEL continued NRSL's work in ship antenna development and directivity. Efforts were directed toward minimizing the number of antennas and using ship structural elements to enhance antenna performance. NEL continued UCDWR work on radar beacons; the precision RACON system went to the Fleet in 1949. Work continued on aircraft recognition systems, which included development of the Mk X identification Friend or Foe (IFF) prototype. NEL also completed the Sound Fixing and Ranging (SOFAR) system for locating survivors at sea. And NEL's long interest in the interaction and submarines with the submerged environment led to pioneering studies of the Arctic.

This report covers in detail tbe research work of the Solid State Division at Lincoln Laboratory for the period 1 November 1995-31 January 1996. The topics covered are Electrooptical Devices, Quantum Electronics, Materials Research, Submicrometer Technology, High Speed Electronics, Microelectronics, and Analog Device Technology.

This is the annual report of the research conducted at the Stanford Electronics Laboratories under the sponsorship of the Joint Services Electronics Program from March 1, 1995 through February 29, 1996. This report summarizes the areas of research, identifies the most significant results and lists the dissertations and publications sponsored by contract DAAHO4-94-G-OO58. Contents: Investigation of Transport in Quantum Dots; Patterned Thin Film Media for High Density Magnetic Recording; Investigation of a Metal Source and Drain Field Emission Transistor; On chip Thin Film Solid State Microbattery; CVD Epitaxial Germanium n-channel FETs Formed on Si Substrates using Strain relief Layers; Portable Video on Demand in Wireless Communication; Adaptive DFE for GMSK in Indoor Radio Channels; Robust Estimation Methods for Adaptive Filtering; and Efficient Data Compression.

Since the appearance of Local Area Networks (LANs), their use and bandwidth consumption have increased considerably. Users are now seeking new technologies to satisfy their bandwidth demand. Many consider ATM as the solution to their needs. Though ATM is fairly new networking technology, it has made several strides, and is now considered a viable technology that is applicable LAN environment. However, migrating from today's shared-medium LANs (Token-Ring and Ethernet) to an ATM LAN exposes a organization to difficulties, risks, and costs. A well-thoughtout migration strategy reduces the impact of these factors while implementing ATM technology. This study reviews ATM technology and its application in a LAN environment, evaluates the Systems Management Department Computer Lab LAN, redesign the LAN using ATM technology, and develops an evolutionary strategy to implement the proposed ATM LAN.

Trans. of Dianzi Jishu (China) v14 n9(144) p45, 1987.

This report summarizes the research activity supported by the Joint Services Electronics Program at the Electronics Research Laboratory for the period June 1993 to June 1994. The Berkeley JSEP effort was organized into three themes: Quantum and Opto-electronic Devices, Semiconductor Electronic Devices, and Artificial Neural Networks. Under Quantum and Opto-electronic Devices, a new femtosecond laser laboratory for ultrafast measurements of carrier dynamics in semiconductors was completed. In the Semiconductor Electronic Device area, a novel device design was invented that has made possible quantitative measurement of the saturation velocity in inversion layers. This key parameter directly relates to the ultimate speed of transistors making it practical to realize CMOS-like circuits that can operate at voltages as low as 0.6V, and still maintain excellent speed and turn-off characteristics. Under Artificial Neural Networks, the focus continued to be the development of connectionist algorithms that are directly applicablc to real-world problems, with particular attention given to applications of specific DoD interest. This work on speech recognition and machine vision emphasizes robustness in the face of noise.

This is the annual report of the research conducted at the Stanford Electronics Laboratories under the sponsorship of the Joint Services Electronics Program from 11 January 1992 through 10 January 1993. This report summarizes the area of research, identifies the most significant results and lists the dissertations and publications sponsored by the contract DAAL03-91-C-0010.

Partial Contents: Solid State Physics, Electronics and Optics: Materials and Fabrication: Heterostructures for High Performance Devices; High- Frequency InAlAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications; Chemical Beam Epitaxy of Compound Semiconductors; Focused Ion Beam Microfabrication; Quantum-Effect Devices; Statistical Mechanics of Quantum Dots; Single Electron Transistors; Differential Resistance Through a Quantum Dot: Signature of Kondo Correlation; Submicron and Nanometer Structures Technology and Research; Optics and Devices: Optics and Quantum Electronics; Optical Propagation and Communication; and High-Frequency (>100 GHz) Electronic Devices