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We demonstrate a pathway employing crystal polarity controlled asymmetric impurity incorporation in the wide bandgap nitride material system to enable 3D doping control during the crystal growth process. The pathway involves polarity specific supersaturation modulated growth of lateral polar structures of alternating Ga- and N-polar GaN domains. A STEM technique of integrated differential phase contrast is used to image the atomic structure of the different polar domains and their single atomic plane boundaries. As a demonstration, 1 μm wide alternating Ga- and N-polar GaN domains exhibiting charge balanced and periodic domains for superjunction technology were grown. The challenges in characterizing the resulting 3D doping profile were addressed with atom probe tomography with atomic scale compositional resolution corroborating capacitance measurements and secondary-ion mass spectroscopy analysis. [ABSTRACT FROM AUTHOR]

Diffraction analysis in four-dimensional scanning transmission electron microscopy now enables the mapping of local structures including symmetry, strain, and polarization of materials. However, measuring the distribution of these configurations at the unit cell level remains a challenge because most analysis methods require the diffraction disks to be separated, limiting the electron probe sizes to be larger than a unit cell. Here, we show improved spatial resolution in mapping the polarization displacement and phases of BaTiO3 sampled at a rate equivalent to the size of the projected unit cells using 4D-STEM. This improvement in spatial resolution is accomplished by masking out the overlapping regions in partially overlapped convergent beam electron diffraction patterns. By reducing the probe size to the order of single projected unit cells in size, the measurement shows local fluctuation within the nanosized rhombohedral domains in tetragonal phased BaTiO3, indicating the origin of phase transition and evolution across different length scales. [ABSTRACT FROM AUTHOR]

H2W2O7, a metastable material synthesized via selective etching of the Aurivillius‐related Bi2W2O9, is demonstrated as an electrode for high power proton‐based energy storage. Comprehensive structural characterization is performed to obtain a high‐fidelity crystal structure of H2W2O7 using an iterative approach that combines X‐ray diffraction, neutron pair distribution function, scanning transmission electron microscopy, Raman spectroscopy, and density functional theory modeling. Electrochemical characterization shows a capacity retention of ≈80% at 1000 mV s–1 (1.5‐s charge/discharge time) as compared to 1 mV s–1 (≈16‐min charge/discharge time) with cyclability for over 100 000 cycles. Energetics from density functional theory calculations indicate that proton storage occurs at the terminal oxygen sites within the hydrated interlayer. Last, optical micrographs collected during in situ Raman spectroscopy show reversible, multicolor electrochromism, with color changes from pale yellow to blue, purple, and last, orange as a function of proton content. These results highlight the use of selective etching of layered perovskites for the synthesis of metastable transition metal oxide materials and the use of H2W2O7 as an anode material for proton‐based energy storage or electrochromic applications. [ABSTRACT FROM AUTHOR]