135 results on '"El Kazzi M"'
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2. X-ray photoelectron spectroscopy and diffraction investigation of a metal–oxide-semiconductor heterostructure: Pt/Gd2O3/Si(111)
3. P023 Defining sleep hygiene in the scientific literature: A bibliographic review of observational studies
4. P024 Defining sleep hygiene: A scoping review of intervention studies
5. CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs
6. 1.2 nm capacitance equivalent thickness gate stacks on Si-passivated GaAs
7. H 2S molecular beam passivation of Ge(0 0 1)
8. Molecular beam epitaxy passivation studies of Ge and III–V semiconductors for advanced CMOS
9. Epitaxial growth of high- κ oxides on silicon
10. Development of robust interfaces based on crystalline γ-Al 2O 3(001) for subsequent deposition of amorphous high- κ oxides
11. Hetero-epitaxy of SrTiO 3 on Si and control of the interface
12. Epitaxial growth and relaxation of γ-Al 2O 3 on silicon
13. Epitaxial growth of LaAlO 3 on Si(0 0 1) using interface engineering
14. Strain relaxation and critical thickness for epitaxial LaAlO 3 thin films grown on SrTiO 3(0 0 1) substrates by molecular beam epitaxy
15. Photoemission (XPS and XPD) study of epitaxial LaAlO 3 film grown on SrTiO 3(0 0 1)
16. Molecular Beam Epitaxy study of a common a-GeO2 interfacial passivation layer for Ge- and GaAs-based MOS heterostructures
17. Growth of crystalline γ-Al2O3 on Si by molecular beam epitaxy: Influence of the substrate orientation.
18. Structural properties of epitaxial SrTiO3 thin films grown by molecular beam epitaxy on Si(001).
19. Growth of crystalline [gamma]-[Al.sub.2][O.sub.3] on Si by molecular beam epitaxy: influence of the substrate orientation
20. Structural properties of epitaxial SrTi[O.sub.3] thin films grown by molecular beam epitaxy on Si(001)
21. Interface and Safety Properties of Phosphorus-Based Negative Electrodes in Li-Ion Batteries
22. Systèmes épitaxiés combinant oxydes et semiconducteurs
23. Ge/SrTiO 3 (001) interface probed by soft x-ray synchrotron-radiation time-resolved photoemission
24. Interface and Safety Properties of Phosphorus-Based Negative Electrodes in Li-Ion Batteries
25. X-ray photoelectron diffraction study of thin Al 2 O 3 films grown on Si(111) by molecular beam epitaxy
26. X-ray photoelectron diffraction study of thin Al2O3 films grown on Si(111) by molecular beam epitaxy
27. Impact of a γ-Al2O3(001) barrier on LaAlO3 metal-oxide-semiconductor capacitor electrical properties
28. Strain relaxation and critical thickness for epitaxial LaAlO3 thin films grown on SrTiO3(001) substrates by molecular beam epitaxy
29. Epitaxial growth of LaAlO3 on Si(001) using interface engineering
30. Molecular beam epitaxial growth of Al2O3 on silicon
31. Molecular beam epitaxial growth of Al2O3 on silicon
32. Nanoscale physics and defect state chemistry at amorphous-Si/In0.53Ga0.47As interfaces
33. (Invited) Physical and Electrical Properties of Scaled Gate Stacks on Si/Passivated In0.53Ga0.47As
34. An integration path for gate-first UTB III-V-on-insulator MOSFETs with silicon, using direct wafer bonding and donor wafer recycling
35. Ge/SrTiO3(001): Correlation between interface chemistry and crystallographic orientation
36. Gate-first implant-free InGaAs n-MOSFETs with sub-nm EOT and CMOS-compatible process suitable for VLSI
37. Ge/SrTiO3(001) interface probed by soft x-ray synchrotron-radiation time-resolved photoemission
38. Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors
39. Sub-nm equivalent oxide thickness on Si-passivated GaAs capacitors with low Dit
40. 1.2nm capacitance equivalent thickness gate stacks on Si-passivated GaAs
41. H2S molecular beam passivation of Ge(001)
42. High oxidation state at the epitaxial interface of γ-Al2O3 thin films grown on Si(111) and Si(001)
43. X-ray photoelectron diffraction study of thinAl2O3films grown on Si(111) by molecular beam epitaxy
44. Impact of a γ-Al[sub 2]O[sub 3](001) barrier on LaAlO[sub 3] metal-oxide-semiconductor capacitor electrical properties
45. Ultralow equivalent oxide thickness obtained for thin amorphous LaAlO3 layers grown on Si(001)
46. Epitaxial growth of SrO on Si(001): Chemical and thermal stability
47. Development of robust interfaces based on crystalline γ-Al2O3(001) for subsequent deposition of amorphous high-κ oxides
48. Growth of crystalline γ‐Al2O3 on Si by molecular beam epitaxy: Influence of the substrate orientation
49. Hetero-epitaxy of SrTiO3 on Si and control of the interface
50. Epitaxial growth and relaxation of γ-Al2O3 on silicon
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