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6 results on '"El‐Zammar, Georgio"'

2. Impact of rapid thermal annealing on Mg-implanted GaN with a SiO x /AlN cap-layer

Author

Khalfaoui, Wahid, Oheix, Thomas, El-Zammar, Georgio, Benoit, Roland, Cayrel, Frédéric, Faulques, Eric, Massuyeau, Florian, Yvon, Arnaud, Collard, Emmanuel, Alquier, Daniel, Interfaces, Confinement, Matériaux et Nanostructures ( ICMN), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347), Université de Tours-Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux Jean Rouxel (IMN), Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST), Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN), STMicroelectronics [Tours] (ST-TOURS), Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours (UT)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], GaN
Abstract

International audience; Local p-type doping in GaN is a key issue for device development but it remains a challenge to be achieved. In this work, we studied the activation of Mg implanted in the GaN. Multi-energy implantations were performed to achieve a “box-like” profile. SIMS measurements showed unexpected deep Mg profile due to defect-assisted channeling in the GaN. In addition, a high-density defect region induced by the implantation was evidenced by TEM characterization. To protect the GaN surface prior to high temperature annealing, an AlN cap-layer was deposited by reactive sputtering followed by SiOx deposition leading to a double cap-layer. Afterwards, the capped samples were RTA-annealed at high temperatures for several minutes under nitrogen. Two types of annealing processes were applied: a monocycle and a multicycle annealing. After annealing, the double cap-layer was etched using chemical solutions. AFM characterizations, after annealing and cap-layer etching, demonstrated that a GaN surface with similar roughness to as-grown samples and pit-free can be achieved after both monocycle and multicycle annealing steps. However, an AlGaN layer at the AlN/GaN interface is observed by ToF-SIMS and remained after the etching of the AlN layer. Finally, Schottky diodes were processed on the unimplanted and annealed samples, evidencing a double barrier, while P/N junction diodes are still being processed on the implanted and annealed samples.

Published
2017
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3. High-Speed Heterogeneous InP-on-Si Capacitive Phase Modulators

Author

Menezo, Sylvie, primary, Thiessen, Torrey, additional, Grosse, Philippe, additional, Poon, Joyce K. S., additional, Jany, Christophe, additional, Da Fonseca, Jeremy, additional, Szelag, Bertrand, additional, Charbonnier, Benoit, additional, El-Zammar, Georgio, additional, Lemonnier, Olivier, additional, Bilondeau, Patricia, additional, Malhouitre, Stéphane, additional, Montmayeul, Brigitte, additional, and Sanchez, Loic, additional

Published
2018
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5. Impact of rapid thermal annealing on Mg-implanted GaN with a SiO x/AlN cap-layer.

Author

Khalfaoui, Wahid, Oheix, Thomas, El‐Zammar, Georgio, Benoit, Roland, Cayrel, Frederic, Faulques, Eric, Massuyeau, Florian, Yvon, Arnaud, Collard, Emmanuel, and Alquier, Daniel

Subjects
ALUMINUM nitrate, MAGNESIUM compounds, THERMAL properties of metals, ANNEALING of metals, IMPACT (Mechanics), DOPING agents (Chemistry)
Abstract

Local p-type doping in GaN is a key issue for device development but it remains a challenge to be achieved. In this work, we studied the activation of Mg implanted in the GaN. Multi-energy implantations were performed to achieve a 'box-like' profile. SIMS measurements showed unexpected deep Mg profile due to defect-assisted channeling in the GaN. In addition, a high-density defect region induced by the implantation was evidenced by TEM characterization. To protect the GaN surface prior to high temperature annealing, an AlN cap-layer was deposited by reactive sputtering followed by SiO x deposition leading to a double cap-layer. Afterwards, the capped samples were RTA-annealed at high temperatures for several minutes under nitrogen. Two types of annealing processes were applied: a monocycle and a multicycle annealing. After annealing, the double cap-layer was etched using chemical solutions. AFM characterizations, after annealing and cap-layer etching, demonstrated that a GaN surface with similar roughness to as-grown samples and pit-free can be achieved after both monocycle and multicycle annealing steps. However, an AlGaN layer at the AlN/GaN interface is observed by ToF-SIMS and remained after the etching of the AlN layer. Finally, Schottky diodes were processed on the unimplanted and annealed samples, evidencing a double barrier, while P/N junction diodes are still being processed on the implanted and annealed samples. [ABSTRACT FROM AUTHOR]

Published
2017
Full Text
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6. Impact of rapid thermal annealing on Mg‐implanted GaN with a SiOx/AlN cap‐layer

Author

Khalfaoui, Wahid, Oheix, Thomas, El‐Zammar, Georgio, Benoit, Roland, Cayrel, Frederic, Faulques, Eric, Massuyeau, Florian, Yvon, Arnaud, Collard, Emmanuel, and Alquier, Daniel

Abstract

Local p‐type doping in GaN is a key issue for device development but it remains a challenge to be achieved. In this work, we studied the activation of Mg implanted in the GaN. Multi‐energy implantations were performed to achieve a “box‐like” profile. SIMS measurements showed unexpected deep Mg profile due to defect‐assisted channeling in the GaN. In addition, a high‐density defect region induced by the implantation was evidenced by TEM characterization. To protect the GaN surface prior to high temperature annealing, an AlN cap‐layer was deposited by reactive sputtering followed by SiOxdeposition leading to a double cap‐layer. Afterwards, the capped samples were RTA‐annealed at high temperatures for several minutes under nitrogen. Two types of annealing processes were applied: a monocycle and a multicycle annealing. After annealing, the double cap‐layer was etched using chemical solutions. AFM characterizations, after annealing and cap‐layer etching, demonstrated that a GaN surface with similar roughness to as‐grown samples and pit‐free can be achieved after both monocycle and multicycle annealing steps. However, an AlGaN layer at the AlN/GaN interface is observed by ToF‐SIMS and remained after the etching of the AlN layer. Finally, Schottky diodes were processed on the unimplanted and annealed samples, evidencing a double barrier, while P/N junction diodes are still being processed on the implanted and annealed samples.

Published
2017
Full Text
View/download PDF

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