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One of the main components of the worldwide transition to sustainable energy is solar cells, usually referred to as photovoltaics. By converting sunlight into power, they lessen their reliance on fossil fuels and the release of greenhouse gases. Because solar cells are decentralized, distributed energy systems may be developed, which increases the efficiency of the cells. Chalcogenide perovskites have drawn interest due to their potential in solar energy conversion since they provide distinctive optoelectronic characteristics and stability. But high temperatures and lengthy reaction periods make it difficult to synthesise and process them. Therefore, we present the inaugural numerical simulation using SCAPS-1D for emerging inorganic BaZrS3/CuO heterojunction solar cells. This study delves into the behaviour of diverse parameters in photovoltaic devices, encompassing efficiency (η) values, short-circuit current density (Jsc), fill factor (FF), and open-circuit voltage (Voc). Additionally, we thoroughly examine the impact of window and absorber layer thickness, carrier concentration, and bandgap on the fundamental characteristics of solar cells. Our findings showcase the attainment of the highest efficiency (η) values, reaching 27.3% for our modelled devices, accompanied by Jsc values of 40.5 mA/cm2, Voc value of 0.79 V, and FF value of 85.2. The efficiency (η) values are chiefly influenced by the combined effects of Voc, Jsc, and FF values. This optimal efficiency was achieved with CuO thickness, band gap, and carrier concentration set at 5 µm, 1.05 eV, and above 1019 cm−3, respectively. In comparison, the optimal parameters for BaZrS3 include a thickness of 1 µm, a carrier concentration below 1020 cm−3, and a band gap less than 1.6 eV. Therefore, in the near future, the present simulation will simultaneously provide up an entirely novel field for the less defective perovskite solar cell. [ABSTRACT FROM AUTHOR]

Samarium oxide (Sm2O3) and ytterbium oxide (Yb2O3) doped tungsten-tellurite glasses (TWSm), (TWYb) in the forms of 80 (TeO2)-(20−x)(WO3)−x(Sm2O3) and 80 (TeO2)-(20−x)(WO3)−x(Yb2O3) with x = 0,1.0,2.0,3.0,4.0 and 5.0 mol% were prepared by the melt-quenching technique. The XRD analysis for the two prepared glass systems verified the samples’ amorphous nature. The glass density (ρ) was measured by the Archimedes method. Both (ρ) and the molar volume (VM) of the two prepared systems showed an increase with increasing the concentrations of dopants Sm3+ and Yb3+. Longitudinal VL and shear VS wave velocities were measured at 5 MHz frequency using the pulse-echo technique. Longitudinal (L), shear (G), bulk (K), and Young’s moduli (E) have been founded. Moreover, Poisson’s (σ), Debye temperature (θD), softening temperature (TS), micro-hardness (H) have been founded for every glass sample. Elastic moduli showed an increase with increasing dopants concentration of (Sm2O3) or (Yb2O3). Moreover, the bulk modulus of (TWSm) glasses was higher than (TWYb) glasses. Mechanical properties of (TWSm) and (TWYb) are crucial parameter in manufacturing optical fibers. [ABSTRACT FROM AUTHOR]

n-type Cu2O thin films were grown on conductive FTO substrates using a low-cost electrodeposition method. The doping of the n−Cu2O thin films with K ions was well identified using XRD, Raman, SEM, EDX, UV-vis, PL, photocurrent, Mott–Schottky, and EIS measurements. The results of the XRD show the creation of cubic Cu2O polycrystalline and monoclinic CuO, with the crystallite sizes ranging from 55 to 25.2 nm. The Raman analysis confirmed the presence of functional groups corresponding to the Cu2O and CuO in the fabricated samples. Moreover, the samples' crystallinity and morphology change with the doping concentrations which was confirmed by SEM. The PL results show two characteristic emission peaks at 520 and 690 nm which are due to the interband transitions in the Cu2O as well as the oxygen vacancies in the CuO, respectively. Moreover, the PL strength was quenched at higher doping concentrations which reveals that the dopant K limits e−/h+ pairs recombination by trapped electrons and holes. The optical results show that the absorption edge is positioned between 425 and 460 nm. The computed Eg for the undoped and K−doped n−Cu2O was observed to be between 2.39 and 2.21 eV. The photocurrent measurements displayed that the grown thin films have the characteristic behavior of n-type semiconductors. Furthermore, the photocurrent is enhanced by raising the doped concentration, where the maximum value was achieved with 0.1 M of K ions. The Mott–Schottky measurements revealed that the flat band potential and donor density vary with a doping concentration from −0.87 to −0.71 V and 1.3 × 1017 to 3.2 × 1017 cm−3, respectively. EIS shows that the lowest resistivity to charge transfer (Rct) was attained at a 0.1 M concentration of K ions. The outcomes indicate that doping n−Cu2O thin films are an excellent candidate for biosensor and photovoltaic applications. [ABSTRACT FROM AUTHOR]

ZrS2 is transition metal dichalcogenides (TMDCs) which is believed one of the most talented applicants to fabricate photovoltaics. Therefore, we present here for the first-time numerical simulation of novel inorganic ZrS2/CuO heterojunction solar cells employing SCAPS-1D. The influence of the thickness, carrier concentration, and bandgap for both the window and absorber layers on the solar cell fundamental parameters was explored intensely. Our results reveal that the solar cell devices performance is mainly affected by many parameters such as the depletion width (Wd), built-in voltage (Vbi), collection length of charge carrier, the minority carrier lifetime, photogenerated current, and recombination rate. The η of 23.8% was achieved as the highest value for our simulated devices with the Voc value of 0.96 V, the Jsc value of 34.2 mA/cm2, and the FF value of 72.2%. Such efficiency was obtained when the CuO band gap, thickness, and carrier concentration were 1.35 eV, 5.5 µm, and above 1018 cm−3, respectively, and for the ZrS2 were 1.4 eV, 1 µm, and less than 1020 cm−3, respectively. Our simulated results indicate that the inorganic ZrS2/CuO heterojunction solar cells are promising to fabricate low-cost, large-scale, and high-efficiency photovoltaic devices. [ABSTRACT FROM AUTHOR]