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One of the aspirations of quantum metrology is to deliver primary standards directly to end-users thereby significantly shortening the traceability chains and enabling more accurate products. Epitaxial graphene grown on silicon carbide (epigraphene) is known to be a viable candidate for a primary realisation of a quantum Hall resistance standard, surpassing conventional semiconductor two-dimensional electron gases, such as those based on GaAs, in terms of performance at higher temperatures and lower magnetic fields. The bottleneck in the realisation of a turn-key quantum resistance standard requiring minimum user intervention has so far been the need to fine-tune the carrier density in this material to fit the constraints imposed by a simple cryo-magnetic system. Previously demonstrated methods, such as via photo-chemistry or corona discharge, require application prior to every cool-down as well as specialist knowledge and equipment. To this end we perform metrological evaluation of epigraphene with carrier density tuned by a recently reported permanent molecular doping technique. Measurements at two National Metrology Institutes confirm accurate resistance quantisation below 5 n Omega Omega(-1). Furthermore, samples show no significant drift in carrier concentration and performance on multiple thermal cycles over three years. This development paves the way for dissemination of primary resistance standards based on epigraphene., Funding Agencies|Swedish-Korean Basic Research Cooperative Program of the NRF [NRF-2017R1A2A1A18070721]; Swedish Foundation for Strategic Research (SSF) [IS14-0053, GMT14-0077, RMA15-0024]; Swedish Research Council (VR); VINNOVA; Knut and Alice Wallenberg Foundation; Chalmers Area of Advance NANO; UK Department of Business, Energy and Industrial Strategy (BEIS); European Unions Horizon 2020 research and innovation programme [785219]

Here we demonstrate a stable and tunable method to alter the carrier concentration of epitaxial graphene grown on silicon carbide. This technique relies on chemical doping by an acceptor molecule. Through careful tuning one can produce chemically doped graphene quantum resistance devices which show long-term stability in ambient conditions and have performance comparable to that of GaAs quantum resistance standards. This development paves the way for controlled device fabrication of graphene quantum hall resistance standards, which can be reliably tailored to operate below 5 T and above 4 K out-of-the-box, without further adjustments from the end-user., Funding Agencies|Swedish-Korean Basic Research Cooperative Program of the NRF [2014R1A2A1A12067266]; Swedish Foundation for Strategic Research (SSF) [IS14-0053]; Swedish Research Council (VR); VINNOVA; Knut and Alice Wallenberg Foundation; Chalmers Area of Advance NANO

EMRP GraphOhm

We report the first precision QHR measurements at SP using a graphene chip. We compare the results of a resistance calibration using GaAs based chips with the results using a graphene chip. The results agree within a few parts in 109 for calibrations of 100 Ω and 10 kΩ resistors. Consistency checks indicate that the uncertainty is lower with the graphene chip, and the noise level is slightly lower. The measurements with the graphene chip were performed exclusively at 4.2 K, which simplifies the calibration procedure considerably compared with GaAs chips., EMRP GraphOhm

In spite of the growing efforts oriented towards revealing different aspects of emphysema, the persistence of the emphysematous or emphysema-like changes (ELCs) is not explored yet in the open literature. In this study we demonstrate the persistence of an ELC for 22 years in a spontaneous pneumothorax (SP) patient which indicates a hitherto unknown gas supply to the ELC. For this purpose we used high resolution computed tomography (HRCT) images processed into three-dimensional (3D) geometry. By the same token, not only a long persistence but also the volume increase of this ELC between 2002 and 2010 was demonstrated. The 3D geometry visualized an aerated interstitial structure between the sites of supposed gas leakage at the wall of the third generation airways and the ELC. This potential gas conducting interstitial pathway is not a continuation and has neither the form nor the structure of a bronchus. The finding suggests that in this patient the intrabronchial gas passes through the bronchial wall and via a gas conducting interstitial pathway reaches the ELC. Despite the availability of the presently employed techniques for at least 15 years, such case and phenomenon have not been described previously. The retrieval of the patient suggests that the findings could be relevant for a considerable proportion of the population.