Search

Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing technologies. The proposal to use nuclear and electronic spins of donor atoms in silicon, introduced by Kane in 1998, sparked a new research field focused on the precise positioning of individual impurity atoms for quantum devices, utilising scanning tunnelling microscopy and ion implantation. This roadmap article reviews the advancements in the 25 years since Kane's proposal, the current challenges, and the future directions in atomic-scale semiconductor device fabrication and measurement. It covers the quest to create a silicon-based quantum computer and expands to include diverse material systems and fabrication techniques, highlighting the potential for a broad range of semiconductor quantum technological applications. Key developments include phosphorus in silicon devices such as single-atom transistors, arrayed few-donor devices, one- and two-qubit gates, three-dimensional architectures, and the development of a toolbox for future quantum integrated circuits. The roadmap also explores new impurity species like arsenic and antimony for enhanced scalability and higher-dimensional spin systems, new chemistry for dopant precursors and lithographic resists, and the potential for germanium-based devices. Emerging methods, such as photon-based lithography and electron beam manipulation, are discussed for their disruptive potential. This roadmap charts the path toward scalable quantum computing and advanced semiconductor quantum technologies, emphasising the critical intersections of experiment, technological development, and theory., Comment: 94 pages

Van der Waals (vdW) materials exhibit a variety of states that can be switched with low power at low temperatures, offering a viable cryogenic "flash memory" required for the classical control electronics for solid-state quantum information processing. In 1T-TaS2, a non-volatile metallic 'hidden' state can be induced from an insulating equilibrium charge-density wave ground state using either optical or electrical pulses. Given that conventional memristors form localized, filamentary channels which support the current, a key question for design concerns the geometry of the conduction region in highly energy-efficient 1T-TaS2 devices. Here, we report in operando micro-beam X-ray diffraction, fluorescence, and concurrent transport measurements, allowing us to spatially image the non-thermal hidden state induced by electrical switching of 1T-TaS2. Our results reveal a long-range ordered, non-filamentary switched state that extends well below the electrodes, implying that the self-organized, collective growth of the hidden phase is driven by a combination of charge flow and lattice strain. Our unique combination of techniques showcases the potential of non-destructive, three-dimensional X-ray imaging to study bulk switching properties in microscopic detail, namely electrical control of the vdW layer stacking.

Even a relatively weak drive force is enough to push a typical nanomechanical resonator into the nonlinear regime. Consequently, nonlinearities are widespread in nanomechanics and determine the critical characteristics of nanoelectromechanical systems (NEMS) resonators. A thorough understanding of the nonlinear dynamics of higher eigenmodes of NEMS resonators would be beneficial for progress, given their use in applications and fundamental studies. Here, we characterize the nonlinearity and the linear dynamic range (LDR) of each eigenmode of two nanomechanical beam resonators with different intrinsic tension values up to eigenmode $n=11$. We find that the modal Duffing constant increases as $n^4$, while the critical amplitude for the onset of nonlinearity decreases as $1/n$. The LDR, determined from the ratio of the critical amplitude to the thermal noise amplitude, increases weakly with $n$. Our findings are consistent with our theory treating the beam as a string, with the nonlinearity emerging from stretching at high amplitudes. These scaling laws, observed in experiments and validated theoretically, can be leveraged for pushing the limits of NEMS-based sensing even further., Comment: 7 pages, 3 figures

The Airy wave packet is a solution to the potential-free Schrodinger equation that exhibits remarkable properties such as self-acceleration, non-diffraction, and self-healing. Although Airy beams are now routinely realized with electromagnetic waves and electrons, the implementation with neutrons has remained elusive due to small transverse coherence lengths, low fluence rates, and the absence of neutron lenses. In this work, we overcome these challenges through a holographic approach and present the first experimental demonstration of neutron Airy beams. The presented techniques pave the way for fundamental physics studies with Airy beams of non-elementary particles, the development of novel neutron optics components, and the realization of neutron Airy-vortex beams.

Access to the neutron orbital degree of freedom has been enabled by the recent actualization of methods to prepare and characterize neutron helical waves carrying orbital angular momentum (OAM) at small-angle neutron scattering (SANS) facilities. This provides new avenues of exploration in fundamental science experiments as well as in material characterization applications. However, it remains a challenge to recover phase profiles from SANS measurements. We introduce and demonstrate a novel neutron interferometry technique for extracting phase information that is typically lost in SANS measurements. An array of reference beams, with complementary structured phase profiles, are put into a coherent superposition with the array of object beams, thereby manifesting the phase information in the far-field intensity profile. We demonstrate this by resolving petal-structure signatures of helical wave interference for the first time: an implementation of the long-sought recovery of phase information from small-angle scattering measurements.

Let $G$ be a connected graph and $\cal X \subseteq V(G)$. By definition, two vertices $u$ and $v$ are $\cal X$-visible in $G$ if there exists a shortest $u,v$-path with all internal vertices being outside of the set $\cal X$. The largest size of $\cal X$ such that any two vertices of $G$ (resp. any two vertices from $\cal X$) are $\cal X$-visible is the total mutual-visibility number (resp. the mutual-visibility number) of $G$. In this paper, we determine the total mutual-visibility number of Kneser graphs, bipartite Kneser graphs, and Johnson graphs. The formulas proved for Kneser, and bipartite Kneser graphs are related to the size of transversal-critical uniform hypergraphs, while the total mutual-visibility number of Johnson graphs is equal to a hypergraph Tur\'an number. Exact values or estimations for the mutual-visibility number over these graph classes are also established.

Extreme ultraviolet (EUV) lithography is the leading lithography technique in CMOS mass production, moving towards the sub-10 nm half-pitch (HP) regime with the ongoing development of the next generation high-numerical aperture (high-NA) EUV scanners. Hitherto, EUV interference lithography (EUV-IL) utilizing transmission gratings has been a powerful patterning tool for the early development of EUV resists and related processes, playing a key role in exploring and pushing the boundaries of photon-based lithography. However, achieving pattering with HPs well below 10 nm using this method presents significant challenges. In response, our study introduces a novel EUV-IL setup that employs mirror-based technology and circumvents the limitations of diffraction efficiency towards the diffraction limit that is inherent in conventional grating-based approaches. We present line/space patterning of HSQ resist down to HP 5 nm using the standard EUV wavelength 13.5 nm, and the compatibility of the tool with shorter wavelengths beyond EUV. The mirror-based interference lithography tool paves the way towards the ultimate photon-based resolution at EUV wavelengths and beyond. This advancement is vital for scientific and industrial research, addressing the increasingly challenging needs of nanoscience and technology and future technology nodes of CMOS manufacturing in the few-nanometer HP regime.