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15 results on '"Eiteneer, D."'

1. Depth-Resolved Composition and Electronic Structure of Buried Layers and Interfaces in a LaNiO$_3$/SrTiO$_3$ Superlattice from Soft- and Hard- X-ray Standing-Wave Angle-Resolved Photoemission

Author

Eiteneer, D., Pálsson, G. K., Nemšák, S., Gray, A. X., Kaiser, A. M., Son, J., LeBeau, J., Conti, G., Greer, A. A., Keqi, A., Rattanachata, A., Saw, A. Y., Bostwick, A., Rotenberg, E., Gullikson, E. M., Ueda, S., Kobayashi, K., Janotti, A., Van de Walle, C. G., Blanca-Romero, A., Pentcheva, R., Schneider, C. M., Stemmer, S., and Fadley, C. S.

Subjects
Condensed Matter - Strongly Correlated Electrons
Abstract

LaNiO$_3$ (LNO) is an intriguing member of the rare-earth nickelates in exhibiting a metal-insulator transition for a critical film thickness of about 4 unit cells [Son et al., Appl. Phys. Lett. 96, 062114 (2010)]; however, such thin films also show a transition to a metallic state in superlattices with SrTiO$_3$ (STO) [Son et al., Appl. Phys. Lett. 97, 202109 (2010)]. In order to better understand this transition, we have studied a strained LNO/STO superlattice with 10 repeats of [4 unit-cell LNO/3 unit-cell STO] grown on an (LaAlO$_3$)$_{0.3}$(Sr$_2$AlTaO$_6$)$_{0.7}$ substrate using soft x-ray standing-wave-excited angle-resolved photoemission (SWARPES), together with soft- and hard- x-ray photoemission measurements of core levels and densities-of-states valence spectra. The experimental results are compared with state-of-the-art density functional theory (DFT) calculations of band structures and densities of states. Using core-level rocking curves and x-ray optical modeling to assess the position of the standing wave, SWARPES measurements are carried out for various incidence angles and used to determine interface-specific changes in momentum-resolved electronic structure. We further show that the momentum-resolved behavior of the Ni 3d eg and t2g states near the Fermi level, as well as those at the bottom of the valence bands, is very similar to recently published SWARPES results for a related La$_{0.7}$Sr$_{0.3}$MnO$_3$/SrTiO$_3$ superlattice that was studied using the same technique (Gray et al., Europhysics Letters 104, 17004 (2013)), which further validates this experimental approach and our conclusions. Our conclusions are also supported in several ways by comparison to DFT calculations for the parent materials and the superlattice, including layer-resolved density-of-states results.

Published
2015
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2. Energetic, spatial and momentum character of a buried interface: the two-dimensional electron gas between two metal oxides

Author

Nemšák, S., Conti, G., Gray, A. X., Pálsson, G. K., Conlon, C., Eiteneer, D., Keqi, A., Rattanachata, A., Saw, A. Y., Bostwick, A., Moreschini, L., Strocov, V., Kobayashi, M., Stolte, W., Ueda, S., Kobayashi, K., Gloskovskii, A., Drube, W., Jackson, C., Moetakef, P., Janotti, A., Bjaalie, L., Himmetoglu, B., Van de Walle, C. G., Borek, S., Minár, J., Braun, J., Ebert, H., Plucinski, L., Kortright, J. B., de Groot, F. M. F., Schneider, C. M., Balents, L., Stemmer, S., and Fadley, C. S.

Subjects
Condensed Matter - Materials Science, Condensed Matter - Other Condensed Matter, Condensed Matter - Strongly Correlated Electrons
Abstract

The interfaces between two condensed phases often exhibit emergent physical properties that can lead to new physics and novel device applications, and are the subject of intense study in many disciplines. We here apply novel experimental and theoretical techniques to the characterization of one such interesting interface system: the two-dimensional electron gas (2DEG) formed in multilayers consisting of SrTiO$_3$ (STO) and GdTiO$_3$ (GTO). This system has been the subject of multiple studies recently and shown to exhibit very high carrier charge densities and ferromagnetic effects, among other intriguing properties. We have studied a 2DEG-forming multilayer of the form [6 unit cells STO/3 unit cells of GTO]$_{20}$ using a unique array of photoemission techniques including soft and hard x-ray excitation, soft x-ray angle-resolved photoemission, core-level spectroscopy, resonant excitation, and standing-wave effects, as well as theoretical calculations of the electronic structure at several levels and of the actual photoemission process. Standing-wave measurements below and above a strong resonance have been introduced as a powerful method for studying the 2DEG depth distribution. We have thus characterized the spatial and momentum properties of this 2DEG with unprecedented detail, determining via depth-distribution measurements that it is spread throughout the 6 u.c. layer of STO, and measuring the momentum dispersion of its states. The experimental results are supported in several ways by theory, leading to a much more complete picture of the nature of this 2DEG, and suggesting that oxygen vacancies are not the origin of it. Similar multi-technique photoemission studies of such states at buried interfaces, combined with comparable theory, will be a very fruitful future approach for exploring and modifying the fascinating world of buried-interface physics and chemistry., Comment: 34 pages, 10 figures

Published
2015
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3. Momentum-resolved electronic structure at a buried interface from soft x-ray standing-wave angle-resolved photoemission

Author

Gray, A. X., Minár, J., Plucinski, L., Huijben, M., Bostwick, A., Rotenberg, E., Yang, S. -H., Braun, J., Winkelmann, A., Conti, G., Eiteneer, D., Rattanachata, A., Greer, A. A., Ciston, J., Ophus, C., Rijnders, G., Blank, D. H. A., Doennig, D., Pentcheva, R., Schneider, C. M., Ebert, H., and Fadley, C. S.

Subjects
Condensed Matter - Materials Science
Abstract

Angle-resolved photoemission spectroscopy (ARPES) is a powerful technique for the study of electronic structure, but it lacks a direct ability to study buried interfaces between two materials. We address this limitation by combining ARPES with soft x-ray standing-wave (SW) excitation (SWARPES), in which the SW profile is scanned through the depth of the sample. We have studied the buried interface in a prototypical magnetic tunnel junction La0.7Sr0.3MnO3/SrTiO3. Depth- and momentum-resolved maps of Mn 3d eg and t2g states from the central, bulk-like and interface-like regions of La0.7Sr0.3MnO3 exhibit distinctly different behavior consistent with a change in the Mn bonding at the interface. We compare the experimental results to state-of-the-art density-functional and one-step photoemission theory, with encouraging agreement that suggests wide future applications of this technique., Comment: 18 pages, 4 figures and Supplementary Information

Published
2013
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4. Defect redistribution along grain boundaries in SrTiO3 by externally applied electric fields

Author

Qu, B, Qu, B, Eiteneer, D, Hughes, LA, Preusker, JH, Wood, J, Rheinheimer, W, Hoffmann, MJ, van Benthem, K, Qu, B, Qu, B, Eiteneer, D, Hughes, LA, Preusker, JH, Wood, J, Rheinheimer, W, Hoffmann, MJ, and van Benthem, K

Abstract

During thermal annealing at 1425 °C nominal electric field strengths of 50 V/mm and 150 V/mm were applied along the grain boundary planes of a near 45° (100) twist grain boundary in SrTiO3. Electron microscopy characterization revealed interface expansions near the positive electrode around 0.8 nm for either field strength. While the interface width decreased to roughly 0.4 nm after annealing at 50 V/mm, the higher field strength caused decomposition of the boundary structure close to the negative electrode. Electron energy-loss and X-ray photoelectron spectroscopies demonstrated an increased degree of oxygen sublattice distortion at the negative electrode side, and enhanced concentrations of Ti3+ and Ti2+ compared to bulk for both single crystals and bicrystals annealed with an external electric field, respectively. Oxygen migration due to the applied electric field causes the observed alteration of grain boundary structures. At sufficiently high field strength the agglomeration of anion vacancies may lead to the decomposition of the grain boundary.

Published
2023

5. Depth-Resolved Composition and Electronic Structure of Buried Layers and Interfaces in a LaNiO3/SrTiO3 Superlattice from Soft- and Hard- X-ray Standing-Wave Angle-Resolved Photoemission

Author

Eiteneer, D., Pálsson, G.K., Nemšák, S., Gray, A.X., Kaiser, A.M., Son, J., LeBeau, J., Conti, G., Greer, A.A., Keqi, A., Rattanachata, A., Saw, A.Y., Bostwick, A., Rotenberg, E., Gullikson, E.M., Ueda, S., Kobayashi, K., Janotti, A., Van de Walle, C.G., Blanca-Romero, A., Pentcheva, R., Schneider, C.M., Stemmer, S., and Fadley, C.S.

Published
2016
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6. Electronic structure of the dilute magnetic semiconductor G a 1- x M n x P from hard x-ray photoelectron spectroscopy and angle-resolved photoemission

Author

Keqi, Armela, Gehlmann, Mathias, Conti, Giuseppina, Nemšák, Slavomír, Rattanachata, Arunothai, Minár, Jan, Pluciński, Łukasz, Rault, Julien E., Rueff, Jean Pascal, Scarpulla, Michael A., Hategan, M., Pálsson, Gunnar Karl, Conlon, Catherine S., Eiteneer, D., Saw, Alexander Y., Gray, Alexander X., Kobayashi, Keisuke, Ueda, Shigenori, Dubón, Oscar D., Schneider, Claus Michael, and Fadley, Charles S.

Subjects
ARPES, DMS, KKR
Abstract

Byla zkoumána elektronická struktura zředěného magnetického polovodiče (DMS) Ga 0,98 Mn 0,02 P a ve srovnání s referenčním vzorkem neopjatého GaP, za použití rentgenové fotoelektronové spektroskopie (HXPS) a pevná rentgenová rentgenová spektroskopie (HARPES) při energiích přibližně 3 keV. Prezentujeme experimentální data, stejně jako teoretické výpočty, aby pochopili roli Mn dopantu při vzniku ferromagnetismu v tomto materiálu. Spektra na úrovni jádra a valenční spektra s úhlem rozděleným nebo úhlem jsou diskutovány. Konkrétně jsou experimentální data HARPESu porovnávána s volně elektronovým modelem konečného stavu výpočty a přesnější jednostupňovou teorii fotoemisí. Experimentální výsledky ukazují rozdíly mezi Ga 0,98 Mn 0,02 P a GaP v obou úhlech a v úhlu integrovaných valenčních spekter. Ga 0,98 Mn 0,02 P pásy jsou rozšířeny kvůli přítomnosti Mn nečistot, které narušují dlouhý rozsah translačního pořadí hostitelský GaP křišťál. Změny elektronové struktury vyvolané Mn jsou pozorovány v celém pásmu valence rozsah, včetně přítomnosti odlišného pásma nečistot blízkého maximálnímu pásmu valence DMS. Tyto experimentální výsledky jsou v dobré shodě s jednokrokovým výpočtem emisí a předcházejícím HARPESem studie Ga 0,97 Mn 0,03 As a GaAs [Gray a kol., Nat. Mater. 11, 957 (2012)], což demonstruje silnou podobnost mezi těmito dvěma materiály. Spektra na úrovni jádra Mn 2p a 3s také odhalují v podstatě stejný stav doping jak GaAs, tak GaP. We have investigated the electronic structure of the dilute magnetic semiconductor (DMS) Ga0.98Mn0.02P and compared it to that of an undoped GaP reference sample, using hard x-ray photoelectron spectroscopy (HXPS) and hard x-ray angle-resolved photoemission spectroscopy (HARPES) at energies of about 3 keV. We present experimentaldata,aswellastheoreticalcalculations,tounderstandtheroleoftheMndopantintheemergenceof ferromagnetism in this material. Both core-level spectra and angle-resolved or angle-integrated valence spectra are discussed. In particular, the HARPES experimental data are compared to free-electron final-state model calculations and to more accurate one-step photoemission theory. The experimental results show differences between Ga0.98Mn0.02P and GaP in both angle-resolved and angle-integrated valence spectra. The Ga0.98Mn0.02P bands are broadened due to the presence of Mn impurities that disturb the long-range translational order of the host GaP crystal. Mn-induced changes of the electronic structure are observed over the entire valence band range, including the presence of a distinct impurity band close to the valence-band maximum of the DMS. These experimental results are in good agreement with the one-step photoemission calculations and a prior HARPES study of Ga0.97Mn0.03As and GaAs [Gray et al., Nat. Mater. 11, 957 (2012)], demonstrating the strong similarity between these two materials. The Mn 2p and 3s core-level spectra also reveal an essentially identical state in doping both GaAs and GaP.

Published
2018

7. Electronic structure of the dilute magnetic semiconductor G a 1 − x M n x P from hard x-ray photoelectron spectroscopy and angle-resolved photoemission

Author

Keqi, A., Gehlmann, M., Hategan, M., Pálsson, G. K., Conlon, C., Eiteneer, D., Saw, A. Y., Gray, A. X., Kobayashi, K., Ueda, S., Dubon, O. D., Schneider, C. M., Conti, G., Fadley, C. S., Nemsak, Slavomir, Rattanachata, A., Minár, J., Plucinski, L., Rault, J. E., Rueff, J. P., and Scarpulla, M.

Subjects
Condensed Matter::Materials Science, Condensed Matter::Strongly Correlated Electrons, ddc:530
Abstract

We have investigated the electronic structure of the dilute magnetic semiconductor (DMS) Ga0.98Mn0.02P and compared it to that of an undoped GaP reference sample, using hard x-ray photoelectron spectroscopy (HXPS) and hard x-ray angle-resolved photoemission spectroscopy (HARPES) at energies of about 3 keV. We present experimental data, as well as theoretical calculations, to understand the role of the Mn dopant in the emergence of ferromagnetism in this material. Both core-level spectra and angle-resolved or angle-integrated valence spectra are discussed. In particular, the HARPES experimental data are compared to free-electron final-state model calculations and to more accurate one-step photoemission theory. The experimental results show differences between Ga0.98Mn0.02P and GaP in both angle-resolved and angle-integrated valence spectra. The Ga0.98Mn0.02P bands are broadened due to the presence of Mn impurities that disturb the long-range translational order of the host GaP crystal. Mn-induced changes of the electronic structure are observed over the entire valence band range, including the presence of a distinct impurity band close to the valence-band maximum of the DMS. These experimental results are in good agreement with the one-step photoemission calculations and a prior HARPES study of Ga0.97Mn0.03As and GaAs [Gray et al., Nat. Mater. 11, 957 (2012)], demonstrating the strong similarity between these two materials. The Mn 2p and 3s core-level spectra also reveal an essentially identical state in doping both GaAs and GaP.

Published
2018

8. Electronic structure of the dilute magnetic semiconductor Ga1-xMnxP from hard x-ray photoelectron spectroscopy and angle-resolved photoemission

Author

Keqi, A., Gehlmann, M., Conti, G., Nemsak, S., Rattanachata, A., Minar, J., Plucinski, L., Rault, J. E., Rueff, J. P., Scarpulla, M., Hategan, M., Pálsson, Gunnar K., Conlon, C., Eiteneer, D., Saw, A. Y., Gray, A. X., Kobayashi, K., Ueda, S., Dubon, O. D., Schneider, C. M., Fadley, C. S., Keqi, A., Gehlmann, M., Conti, G., Nemsak, S., Rattanachata, A., Minar, J., Plucinski, L., Rault, J. E., Rueff, J. P., Scarpulla, M., Hategan, M., Pálsson, Gunnar K., Conlon, C., Eiteneer, D., Saw, A. Y., Gray, A. X., Kobayashi, K., Ueda, S., Dubon, O. D., Schneider, C. M., and Fadley, C. S.

Abstract

We have investigated the electronic structure of the dilute magnetic semiconductor (DMS) Ga0.98Mn0.02P and compared it to that of an undoped GaP reference sample, using hard x-ray photoelectron spectroscopy (HXPS) and hard x-ray angle-resolved photoemission spectroscopy (HARPES) at energies of about 3 keV. We present experimental data, as well as theoretical calculations, to understand the role of the Mn dopant in the emergence of ferromagnetism in this material. Both core-level spectra and angle-resolved or angle-integrated valence spectra are discussed. In particular, the HARPES experimental data are compared to free-electron final-state model calculations and to more accurate one-step photoemission theory. The experimental results show differences between Ga0.98Mn0.02P and GaP in both angle-resolved and angle-integrated valence spectra. The Ga0.98Mn0.02P bands are broadened due to the presence of Mn impurities that disturb the long-range translational order of the host GaP crystal. Mn-induced changes of the electronic structure are observed over the entire valence band range, including the presence of a distinct impurity band close to the valence-band maximum of the DMS. These experimental results are in good agreement with the one-step photoemission calculations and a prior HARPES study of Ga0.97Mn0.03As and GaAs [Gray et al., Nat. Mater. 11, 957 (2012)], demonstrating the strong similarity between these two materials. The Mn 2p and 3s core-level spectra also reveal an essentially identical state in doping both GaAs and GaP.

Published
2018
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9. Band offsets in complex-oxide thin films and heterostructures of SrTiO3/LaNiO3 and SrTiO3/GdTiO3 by soft and hard X-ray photoelectron spectroscopy.

Author

Conti, G., Kaiser, A. M., Gray, A. X., Nemsˇák, S., Pálsson, G. K., Son, J., Moetakef, P., Janotti, A., Bjaalie, L., Conlon, C. S., Eiteneer, D., Greer, A. A., Keqi, A., Rattanachata, A., Saw, A. Y., Bostwick, A., Stolte, W. C., Gloskovskii, A., Drube, W., and Ueda, S.

Subjects
STRONTIUM titanate films, THIN film research, HETEROSTRUCTURES, PHOTOELECTRON spectroscopy, SURFACE charging
Abstract

The experimental determination of valence band offsets (VBOs) at interfaces in complex-oxide heterostructures using conventional soft x-ray photoelectron spectroscopy (SXPS, hν ≤ 1500 eV) and reference core-level binding energies can present challenges because of surface charging when photoelectrons are emitted and insufficient probing depth to clearly resolve the interfaces. In this paper, we compare VBOs measured with SXPS and its multi-keV hard x-ray analogue (HXPS, hν > 2000 eV). We demonstrate that the use of HXPS allows one to minimize charging effects and to probe more deeply buried interfaces in heterostructures such as SrTiO3/LaNiO3 and SrTiO3/GdTiO3. The VBO values obtained by HXPS for these interfaces are furthermore found to be close to those determined by first-principles calculations. [ABSTRACT FROM AUTHOR]

Published
2013
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10. Electronic structure of the dilute magnetic semiconductor Ga1−xMnxP from hard x-ray photoelectron spectroscopy and angle-resolved photoemission

Author

Keqi, A., primary, Gehlmann, M., additional, Conti, G., additional, Nemšák, S., additional, Rattanachata, A., additional, Minár, J., additional, Plucinski, L., additional, Rault, J. E., additional, Rueff, J. P., additional, Scarpulla, M., additional, Hategan, M., additional, Pálsson, G. K., additional, Conlon, C., additional, Eiteneer, D., additional, Saw, A. Y., additional, Gray, A. X., additional, Kobayashi, K., additional, Ueda, S., additional, Dubon, O. D., additional, Schneider, C. M., additional, and Fadley, C. S., additional

Published
2018
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11. Energetic, spatial, and momentum character of the electronic structure at a buried interface: The two-dimensional electron gas between two metal oxides

Author

Nemšák, S., Conti, G., Gray, A. X., Palsson, G. K., Conlon, C., Eiteneer, D., Keqi, A., Rattanachata, A., Saw, A. Y., Bostwick, A., Moreschini, L., Rotenberg, E., Strocov, V. N., Kobayashi, M., Schmitt, T., Stolte, W., Ueda, S., Kobayashi, K., Gloskovskii, A., Drube, W., Jackson, C. A., Moetakef, P., Janotti, A., Bjaalie, L., Himmetoglu, B., Van De Walle, C. G., Borek, S., Minar, J., Braun, J., Ebert, H., Plucinski, L., Kortright, J. B., Schneider, C. M., Balents, L., De Groot, F. M F, Stemmer, S., Fadley, C. S., Sub Inorganic Chemistry and Catalysis, Inorganic Chemistry and Catalysis, Sub Inorganic Chemistry and Catalysis, and Inorganic Chemistry and Catalysis

Subjects
Physics, Condensed matter physics, Inverse photoemission spectroscopy, Angle-resolved photoemission spectroscopy, 02 engineering and technology, Electronic structure, Condensed Matter Physics, 021001 nanoscience & nanotechnology, 01 natural sciences, Resonance (particle physics), Electronic, Optical and Magnetic Materials, Characterization (materials science), Momentum, 0103 physical sciences, Electronic, ddc:530, Optical and Magnetic Materials, 010306 general physics, 0210 nano-technology, Fermi gas, Excitation
Abstract

The interfaces between two condensed phases often exhibit emergent physical properties that can lead to new physics and novel device applications and are the subject of intense study in many disciplines. We here apply experimental and theoretical techniques to the characterization of one such interesting interface system: the two-dimensional electron gas (2DEG) formed in multilayers consisting of SrTiO3 (STO) and GdTiO3 (GTO). This system has been the subject of multiple studies recently and shown to exhibit very high carrier charge densities and ferromagnetic effects, among other intriguing properties. We have studied a 2DEG-forming multilayer of the form [6 unit cells (u.c.) STO/3 u.c. of GTO](20) using a unique array of photoemission techniques including soft and hard x-ray excitation, soft x-ray angle-resolved photoemission, core-level spectroscopy, resonant excitation, and standing-wave effects, as well as theoretical calculations of the electronic structure at several levels and of the actual photoemission process. Standing-wave measurements below and above a strong resonance have been exploited as a powerful method for studying the 2DEG depth distribution. We have thus characterized the spatial and momentum properties of this 2DEG in detail, determining via depth-distribution measurements that it is spread throughout the 6 u.c. layer of STO and measuring the momentum dispersion of its states. The experimental results are supported in several ways by theory, leading to a much more complete picture of the nature of this 2DEG and suggesting that oxygen vacancies are not the origin of it. Similar multitechnique photoemission studies of such states at buried interfaces, combined with comparable theory, will be a very fruitful future approach for exploring and modifying the fascinating world of buried-interface physics and chemistry.

Published
2016

12. Depth-Resolved Composition and Electronic Structure of Buried Layers and Interfaces in a LaNiO3/SrTiO3 Superlatticefroni Soft- and Hard-X-ray Standing-Wave Angle-Resolved Photoemission

Author

Eiteneer, D., Pálsson, Gunna K., Nemsak, S., Gray, A. X., Kaiser, A. M., Son, J., LeBeau, J., Conti, G., Greer, A. A., Kaqi, A., Rattanachata, A., Saw, A. Y., Bostwick, A., Rotenberg, E., Gullikson, E. M., Ueda, S., Kobayashi, K., Janotti, A., Van de Walle, C. G., Blanca-Romero, A., Pentcheva, R., Schneider, C. M., Stemmer, S., Fadley, C. S., Eiteneer, D., Pálsson, Gunna K., Nemsak, S., Gray, A. X., Kaiser, A. M., Son, J., LeBeau, J., Conti, G., Greer, A. A., Kaqi, A., Rattanachata, A., Saw, A. Y., Bostwick, A., Rotenberg, E., Gullikson, E. M., Ueda, S., Kobayashi, K., Janotti, A., Van de Walle, C. G., Blanca-Romero, A., Pentcheva, R., Schneider, C. M., Stemmer, S., and Fadley, C. S.

Abstract

LaNiO3 (LNO) is an intriguing member of the rare-earth nickelates in exhibiting a metal-insulator transition for a critical film thickness of about 4 unit cells [Son et al., Appl. Phys. Lett. 96, 062114 (2010)]; however, such thin films also show a transition to a metallic state in superlattices with SrTiO3 (STO) [Son et al., Appl. Phys. Lett. 97, 202109 (2010)]. In order to better understand this transition, we have studied a strained LNO/STO superlattice with 10 repeats of [4 unit-cell LNO/3 unit-cell STO] grown on an (LaAlO3)(0.3)(Sr2AlTaO6)(0.7) substrate using soft x-ray standing-wave-excited angle-resolved photoemission (SWARPES), together with soft- and hard- x-ray photoemission-measurements of core levels and densities-of-states valence spectra. The experimental results are compared with state-of-the-art density functional theory (DFT) calculations of band structures and densities of states. Using core-level rocking curves and x-ray optical modeling to assess the position of the standing wave, SWARPES measurements are carried out for various incidence angles and used to determine interface-specific changes in momentum-resolved electronic structure. We further show that the momentum-resolved behavior of the Ni 3d e(g) and t(2g) states near the Fermi level, as well as those at the bottom of the valence bands, is very similar to recently published SWARPES results for a related La0.7Sr0.3MnO3/SrTiO3 superlattice that was-studied using the same technique (Gray et al., Europhysics Letters 104, 17004 (2013)), which further validates this experimental approach and our conclusions. Our conclusions are also supported in several ways by comparison to DFT calculations for the parent materials and the superlattice, including layer-resolved density-of-states results.

Published
2016
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13. Energetic, spatial, and momentum character of the electronic structure at a buried interface: The two-dimensional electron gas between two metal oxides

Author

Sub Inorganic Chemistry and Catalysis, Inorganic Chemistry and Catalysis, Nemšák, S., Conti, G., Gray, A. X., Palsson, G. K., Conlon, C., Eiteneer, D., Keqi, A., Rattanachata, A., Saw, A. Y., Bostwick, A., Moreschini, L., Rotenberg, E., Strocov, V. N., Kobayashi, M., Schmitt, T., Stolte, W., Ueda, S., Kobayashi, K., Gloskovskii, A., Drube, W., Jackson, C. A., Moetakef, P., Janotti, A., Bjaalie, L., Himmetoglu, B., Van De Walle, C. G., Borek, S., Minar, J., Braun, J., Ebert, H., Plucinski, L., Kortright, J. B., Schneider, C. M., Balents, L., De Groot, F. M F, Stemmer, S., Fadley, C. S., Sub Inorganic Chemistry and Catalysis, Inorganic Chemistry and Catalysis, Nemšák, S., Conti, G., Gray, A. X., Palsson, G. K., Conlon, C., Eiteneer, D., Keqi, A., Rattanachata, A., Saw, A. Y., Bostwick, A., Moreschini, L., Rotenberg, E., Strocov, V. N., Kobayashi, M., Schmitt, T., Stolte, W., Ueda, S., Kobayashi, K., Gloskovskii, A., Drube, W., Jackson, C. A., Moetakef, P., Janotti, A., Bjaalie, L., Himmetoglu, B., Van De Walle, C. G., Borek, S., Minar, J., Braun, J., Ebert, H., Plucinski, L., Kortright, J. B., Schneider, C. M., Balents, L., De Groot, F. M F, Stemmer, S., and Fadley, C. S.

Published
2016

14. Momentum-resolved electronic structure at a buried interface from soft X-ray standing-wave angle-resolved photoemission

Author

Gray, A. X., primary, Minár, J., additional, Plucinski, L., additional, Huijben, M., additional, Bostwick, A., additional, Rotenberg, E., additional, Yang, S.‐H., additional, Braun, J., additional, Winkelmann, A., additional, Conti, G., additional, Eiteneer, D., additional, Rattanachata, A., additional, Greer, A. A., additional, Ciston, J., additional, Ophus, C., additional, Rijnders, G., additional, Blank, D. H. A., additional, Doennig, D., additional, Pentcheva, R., additional, Kortright, J. B., additional, Schneider, C. M., additional, Ebert, H., additional, and Fadley, C. S., additional

Published
2013
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