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In this work, we consider superconductor/flat band material/superconductor (S/FB/S) Josephson junctions (JJs) where the flat band material possesses isolated flat bands with exactly zero Fermi velocity. Contrary to conventional S/N/S JJs where the critical Josephson current vanishes when the Fermi velocity goes to zero, we show in this work that the critical current in the S/FB/S junction is controlled by the quantum metric length $\xi_\mathrm{QM}$ of the flat bands. Microscopically, when $\xi_\mathrm{QM}$ of the flat band is long enough, the interface bound states originally localized at the two S/FB, FB/S interfaces can penetrate deeply into the flat band material and hybridize to form Andreev bound states (ABSs). These ABSs are able to carry long range and sizable supercurrents. Importantly, $\xi_\mathrm{QM}$ also controls how far the proximity effect can penetrate into the flat band material. This stands in sharp contrast to the de Gennes' theory for S/N junctions which predicts that the proximity effect is expected to be zero when the Fermi velocity of the normal metal is zero. We further suggest that the S/FB/S junctions would give rise to a new type of resonant Josephson transistors which can carry sizable and highly gate-tunable supercurrent.

We study the interacting transport properties of twisted bilayer graphene (TBG) using the topological heavy-fermion (THF) model. In the THF model, TBG comprises localized, correlated $f$-electrons and itinerant, dispersive $c$-electrons. We focus on the Seebeck coefficient, which quantifies the voltage difference arising from a temperature gradient. We find that the TBG's Seebeck coefficient shows unconventional (strongly-interacting) traits: negative values with sawtooth oscillations at positive fillings, contrasting typical band-theory expectations. This behavior is naturally attributed to the presence of heavy (correlated, short-lived $f$-electrons) and light (dispersive, long-lived $c$-electrons) electronic bands. Their longer lifetime and stronger dispersion lead to a dominant transport contribution from the $c$-electrons. At positive integer fillings, the correlated TBG insulators feature $c$- ($f$-)electron bands on the electron (hole) doping side, leading to an overall negative Seebeck coefficient. Additionally, sawtooth oscillations occur around each integer filling due to gap openings. Our results highlight the essential importance of electron correlations in understanding the transport properties of TBG and, in particular, of the lifetime asymmetry between the two fermionic species (naturally captured by the THF model). Our findings are corroborated by new experiments in both twisted bilayer and trilayer graphene, and show the natural presence of strongly-correlated heavy and light carriers in the system., Comment: 5+106 pages, 3+36 figures, 6 tables. See also the accompanying experimental papers arXiv:2402.11749 and arXiv:2402.12296. The accompanying Ref. 252 will be posted soon

It has been recently postulated, that the strongly correlated flat bands of magicangle twisted bilayer graphene (MATBG) can host coexisting heavy and light carriers. While transport and spectroscopic measurements have shown hints of this behavior, a more direct experimental proof is still lacking. Here, we explore the thermoelectric response of MATBG through the photo-thermoelectric (PTE) effect in gate-defined MATBG pn-junctions. At low temperatures, we observe sign-preserving, fillingdependent oscillations of the Seebeck coefficient at non-zero integer fillings of the moir\'e lattice, which suggest the preponderance of one carrier type despite tuning the Fermi level from hole to electron doping of the correlated insulator. Furthermore, at higher temperatures, the thermoelectric response provides distinct evidence of the strong electron correlations in the unordered, normal state. We show that our observations are naturally accounted for by the interplay of light and long-lived and heavy and short-lived electron bands near the Fermi level at non-zero integer fillings. Our observations firmly establish the electron and hole asymmetry of the correlated gaps in MATBG, and shows excellent qualitative agreement with the recently developed topological heavy fermion model (THF).

We investigate in detail the $\nu=+1$ displacement-field-tuned interacting phase diagram of $L=3,4,5,6,7$ layer rhombohedral graphene aligned to hBN (R$L$G/hBN). Our calculations account for the 3D nature of the Coulomb interaction, the inequivalent stacking orientations $\xi=0,1$, the effects of the filled valence bands, and the choice of `interaction scheme' for specifying the many-body Hamiltonian. We show that the latter has a dramatic impact on the Hartree-Fock phase boundaries and the properties of the phases, including for pentalayers (R5G/hBN) with large displacement field $D$ where recent experiments observed a Chern insulator at $\nu=+1$ and fractional Chern insulators for $\nu<1$. In this large $D$ regime, the low-energy conduction bands are polarized away from the aligned hBN layer, and are hence well-described by the folded bands of moir\'eless rhombohedral graphene at the non-interacting level. Despite this, the filled valence bands develop moir\'e-periodic charge density variations which can generate an effective moir\'e potential, thereby explicitly breaking the approximate continuous translation symmetry in the conduction bands, and leading to contrasting electronic topology in the ground state for the two stacking arrangements. Within time-dependent Hartree-Fock theory, we further characterize the strength of the moir\'e pinning potential in the Chern insulator phase by computing the low-energy $\mathbf{q}=0$ collective mode spectrum, where we identify competing gapped pseudophonon and valley magnon excitations. Our results emphasize the importance of careful examination of both the single-particle and interaction model for a proper understanding of the correlated phases in R$L$G/hBN.

The experimental discovery of fractional Chern insulators (FCIs) in rhombohedral pentalayer graphene twisted on hexagonal boron nitride (hBN) has preceded theoretical prediction. Supported by large-scale first principles relaxation calculations at the experimental twist angle of $0.77^\circ$, we obtain an accurate continuum model of $n=3,4,5,6,7$ layer rhombohedral graphene-hBN moir\'e systems. Focusing on the pentalayer case, we analytically explain the robust $|C|=0,5$ Chern numbers seen in the low-energy single-particle bands and their flattening with displacement field, making use of a minimal two-flavor continuum Hamiltonian derived from the full model. We then predict nonzero valley Chern numbers at the $\nu = -4,0$ insulators observed in experiment. Our analysis makes clear the importance of displacement field and the moir\'e potential in producing localized "heavy fermion" charge density in the top valence band, in addition to the nearly free conduction band. Lastly, we study doubly aligned devices as additional platforms for moir\'e FCIs with higher Chern number bands., Comment: Second paper in the moir\'e FCI series

We propose minimal transport experiments in the coherent regime that can probe the chirality of twisted moir\'e structures. We show that only with a third contact and in the presence of an in-plane magnetic field (or other time-reversal symmetry breaking effect), a chiral system may display non-reciprocal transport in the linear regime. We then propose to use the third lead as a voltage probe and show that opposite enantiomers give rise to different voltage drops on the third lead. Additionally, in the scenario of layer-discriminating contacts, the third lead can serve as a current probe, capable of detecting different handedness even in the absence of a magnetic field. In a complementary configuration, applying opposite voltages on the two layers of the third leads gives rise to a chiral (super)current in the absence of a source-drain voltage whose direction is determined by its chirality., Comment: 38 pages, 8 figures

Carrier relaxation measurements in moir\'e materials offer a unique probe of the microscopic interactions, in particular the ones that are not easily measured by transport. Umklapp scattering between phonons is a ubiquitous momentum-nonconserving process that governs the thermal conductivity of semiconductors and insulators. In contrast, Umklapp scattering between electrons and phonons has not been demonstrated experimentally. Here, we study the cooling of hot electrons in moir\'e graphene using time- and frequency-resolved photovoltage measurements as a direct probe of its complex energy pathways including electron-phonon coupling. We report on a dramatic speedup in hot carrier cooling of twisted bilayer graphene near the magic angle: the cooling time is a few picoseconds from room temperature down to 5 K, whereas in pristine graphene coupling to acoustic phonons takes nanoseconds. Our analysis indicates that this ultrafast cooling is a combined effect of the formation of a superlattice with low-energy moir\'e phonons, spatially compressed electronic Wannier orbitals, and a reduced superlattice Brillouin zone, enabling Umklapp scattering that overcomes electron-phonon momentum mismatch. These results demonstrate a way to engineer electron-phonon coupling in twistronic systems, an approach that could contribute to the fundamental understanding of their transport properties and enable applications in thermal management and ultrafast photodetection., Comment: 19 pages, 4 figures, 10 supporting figures

Detecting light at the single-photon level is one of the pillars of emergent photonic technologies. This is realized through state-of-the-art superconducting detectors that offer efficient, broadband and fast response. However, the use of superconducting thin films with low TC limits their operation temperature below 4K. In this work, we demonstrate proof-of-concept nanodetectors based on exfoliated, two-dimensional cuprate superconductor Bi2Sr2CaCu2O8-{\delta} (BSCCO) that exhibit single-photon sensitivity at telecom wavelength at a record temperature of T = 20K. These non-optimized devices exhibit a slow (ms) reset time and a low detection efficiency (10^(-4)). We realize the elusive prospect of single-photon sensitivity on a high-TC nanodetector thanks to a novel approach, combining van der Waals fabrication techniques and a non-invasive nanopatterning based on light ion irradiation. This result paves the way for broader application of single-photon technologies, relaxing the cryogenic constraints for single-photon detection at telecom wavelength.

Nonlinear nanophotonics leverages engineered nanostructures to funnel light into small volumes and intensify nonlinear optical processes with spectral and spatial control. Due to its intrinsically large and electrically tunable nonlinear optical response, graphene is an especially promising nanomaterial for nonlinear optoelectronic applications. Here we report on exceptionally strong optical nonlinearities in graphene-insulator-metal heterostructures, demonstrating an enhancement by three orders of magnitude in the third-harmonic signal compared to bare graphene. Furthermore, by increasing the graphene Fermi energy through an external gate voltage, we find that graphene plasmons mediate the optical nonlinearity and modify the third-harmonic signal. Our findings show that graphene-insulator-metal is a promising heterostructure for optically-controlled and electrically-tunable nano-optoelectronic components.

Mirror-symmetric magic-angle twisted trilayer graphene (MATTG) hosts flat electronic bands close to zero energy, and has been recently shown to exhibit abundant correlated quantum phases with flexible electrical tunability. However studying these phases proved challenging as these are obscured by intertwined Dirac bands. In this work, we demonstrate a novel spectroscopy technique, that allows to quantify the energy gaps and Chern numbers of the correlated states in MATTG by driving band crossings between Dirac cone Landau levels and the energy gaps in the flat bands. We uncover hard correlated gaps with Chern numbers of C = 0 at integer moire unit cell fillings of nu = 2 and 3 and reveal novel charge density wave states originating from van Hove singularities at fractional fillings of nu = 5/3 and 11/3. In addition, we demonstrate the existence of displacement field driven first-order phase transitions at charge neutrality and half fillings of the moire unit cell nu = 2, which is consistent with a theoretical strong-coupling analysis, implying the breaking of the C2T symmetry. Overall these properties establish the diverse and electrically tunable phase diagram of MATTG and provide an avenue for investigating electronic quantum phases and strong correlations in multiple-band moire systems.

Recently, gate-defined Josephson junctions in magic angle twisted bilayer graphene (MATBG) were studied experimentally and highly unconventional Fraunhofer patterns were observed. In this work, we show that an interaction-driven valley-polarized state connecting two superconducting regions of MATBG would give rise to a long-sought-after purely electric controlled $\varphi_0$-junction in which the two superconductors acquire a finite phase difference $\varphi_0$ in the ground state. We point out that the emergence of the $\varphi_0$-junction stems from the valley-polarized state which breaks time-reversal symmetry and trigonal warping effects which break the intravalley inversion symmetry. Importantly, a spatially non-uniform valley polarization order parameter at the junction can explain the highly unconventional Fraunhofer patterns observed in the experiment. Our work explores the novel transport properties of the valley-polarized state and suggests that gate-defined MATBG Josephson junctions could realize the first purely electric controlled $\varphi_0$-junctions with applications in superconducting devices., Comment: 7 pages, 4 figures, plus Supplementary Material

Technologies operating on the basis of quantum mechanical laws and resources such as phase coherence and entanglement are expected to revolutionize our future. Quantum technologies are often divided into four main pillars: computing, simulation, communication, and sensing & metrology. Moreover, a great deal of interest is currently also nucleating around energy-related quantum technologies. In this Perspective, we focus on advanced superconducting materials, van der Waals materials, and moir\'e quantum matter, summarizing recent exciting developments and highlighting a wealth of potential applications, ranging from high-energy experimental and theoretical physics to quantum materials science and energy storage., Comment: 19 pages, 4 figures, 215 references, Perspective article on solid-state quantum technologies

Charge carriers in magic angle graphene come in eight flavors described by a combination of their spin, valley, and sublattice polarizations. When the inversion and time reversal symmetries are broken by the substrate or by strong interactions, the degeneracy of the flavors can be lifted and their corresponding bands can be filled sequentially. Due to their non-trivial band topology and Berry curvature, each of the bands is classified by a topological Chern number, leading to the quantum anomalous Hall and Chern insulator states at integer fillings $\nu$ of the bands. It has been recently predicted, however, that depending on the local atomic-scale arrangements of the graphene and the encapsulating hBN lattices, rather than being a global topological invariant, the Chern number C may become position dependent, altering transport and magnetic properties of the itinerant electrons. Using a SQUID-on-tip, we directly image the nanoscale Berry-curvature-induced equilibrium orbital magnetism, the polarity of which is governed by the local Chern number, and detect its two constituent components associated with the drift and the self-rotation of the electronic wave packets. At $\nu=1$, we observe local zero-field valley-polarized Chern insulators forming a mosaic of microscopic patches of C=-1, 0, or 1, governed by the local sublattice polarization, consistent with predictions. Upon further filling, we find a first-order phase transition due to recondensation of electrons from valley K to K', which leads to irreversible flips of the local Chern number and the magnetization, and to the formation of valley domain walls giving rise to hysteretic global anomalous Hall resistance. The findings shed new light on the structure and dynamics of topological phases and call for exploration of the controllable formation of flavor domain walls and their utilization in twistronic devices., Comment: 29 pages, 5 main text figures and 8 supplementary figures

Twisted bilayer graphene (TBG) is remarkable for its topological flat bands, which drive strongly-interacting physics at integer fillings, and its simple theoretical description facilitated by the Bistritzer-MacDonald Hamiltonian, a continuum model coupling two Dirac fermions. Due to the large moir\'e unit cell, TBG offers the unprecedented opportunity to observe reentrant Hofstadter phases in laboratory-strength magnetic fields near $25$T. This Letter is devoted to magic angle TBG at $2\pi$ flux where the magnetic translation group commutes. We use a newly developed gauge-invariant formalism to determine the exact single-particle band structure and topology. We find that the characteristic TBG flat bands reemerge at $2\pi$ flux, but, due to the magnetic field breaking $C_{2z} \mathcal{T}$, they split and acquire Chern number $\pm1$. We show that reentrant correlated insulating states appear at $2\pi$ flux driven by the Coulomb interaction at integer fillings, and we predict the characteristic Landau fans from their excitation spectrum. We conjecture that superconductivity can also be re-entrant at $2\pi$ flux., Comment: (See also "Observation of re-entrant correlated insulators and interaction driven Fermi surface reconstructions at one magnetic flux quantum per moire unit cell in magic-angle twisted bilayer graphene" by Das et al.)

The discovery of flat bands with non-trivial band topology in magic angle twisted bi-layer graphene (MATBG) has provided a unique platform to study strongly correlated phe-nomena including superconductivity, correlated insulators, Chern insulators and magnetism. A fundamental feature of the MATBG, so far unexplored, is its high magnetic field Hof-stadter spectrum. Here we report on a detailed magneto-transport study of a MATBG de-vice in external magnetic fields of up to B = 31 T, corresponding to one magnetic flux quan-tum per moir\'e unit cell {\Phi}0. At {\Phi}0, we observe a re-entrant correlated insulator at a flat band filling factor of {\nu} = +2, and interaction-driven Fermi surface reconstructions at other fillings, which are identified by new sets of Landau levels originating from these. These ex-perimental observations are supplemented by theoretical work that predicts a new set of 8 well-isolated flat bands at {\Phi}0 , of comparable band width but with different topology than in zero field. Overall, our magneto-transport data reveals a qualitatively new Hofstadter spec-trum in MATBG, which arises due to the strong electronic correlations in the re-entrant flat bands.

The simultaneous co-existence and gate-tuneability of the superconducting (SC), magnetic and topological orders in magic angle twisted bilayer graphene (MATBG) open up entirely new possibilities for the creation of complex hybrid Josephson junctions (JJ). Here we report on the creation of gate-defined, magnetic Josephson junctions in MATBG, where the weak link is gate-tuned close to the correlated state at a moir\'e filling factor of {\nu}=-2. A highly unconventional Fraunhofer pattern emerges, which is phase-shifted and asymmetric with respect to the current and magnetic field directions, and shows a pronounced magnetic hysteresis. Interestingly, our theoretical calculations of the JJ with a valley polarized {\nu}=-2 with orbital magnetization as the weak link explain most of these unconventional features without fine tuning the parameters. While these unconventional Josephson effects persist up to the critical temperature Tc ~ 3.5K of the superconducting state, at temperatures below T < 800mK, we observed a pronounced magnetic hysteresis possibly due to further spin-polarization of the {\nu}=-2 state. We demonstrate how the combination of magnetization and its current induced magnetization switching in the MATBG JJ allows us to realize a programmable zero field superconducting diode, which represents a major building block for a new generation of superconducting quantum electronics.

The flat bands of magic-angle twisted bilayer graphene (MATBG) host strongly-correlated electronic phases such as correlated insulators, superconductors and a strange-metal state. The latter state, believed to be key for understanding the electronic properties of MATBG, is obscured by various phase transitions and thus could not be unequivocally differentiated from a metal undergoing frequent electron-phonon collisions. Here, we report transport measurements in superconducting MATBG in which the correlated insulator states are suppressed by screening. The uninterrupted metallic ground state shows resistivity that is linear in temperature over three decades and spans a broad range of doping including those where a correlation-driven Fermi surface reconstruction occurs. This strange-metal behavior is distinguished by Planckian scattering rates and a linear magnetoresistivity. In contrast, near charge neutrality or a fully-filled flat band, as well as for devices twisted away from the magic angle, we observe the archetypal Fermi liquid behavior. Our measurements demonstrate the existence of a quantum critical phase whose fluctuations dominate the metallic ground state throughout a continuum of doping. Further, we observe a transition to the strange metal upon suppression of the superconducting order, suggesting a relationship between quantum fluctuations and superconductivity in MATBG.

The discovery of magic angle twisted bilayer graphene (MATBG) has unveiled a rich variety of superconducting, magnetic and topologically nontrivial phases. The existence of all these phases in one material, and their tunability, has opened new pathways for the creation of unusual gate tunable junctions. However, the required conditions for their creation - gate induced transitions between phases in zero magnetic field - have so far not been achieved. Here, we report on the first experimental demonstration of a device that is both a zero-field Chern insulator and a superconductor. The Chern insulator occurs near moire cell filling factor v = +1 in a hBN non-aligned MATBG device and manifests itself via an anomalous Hall effect. The insulator has Chern number C = +-1 and a relatively high Curie temperature of Tc = 4.5 K. Gate tuning away from this state exposes strong superconducting phases with critical temperatures of up to Tc = 3.5 K. In a perpendicular magnetic field above B > 0.5 T we observe a transition of the /C/= +1 Chern insulator from Chern number C = +-1 to C = 3, characterized by a quantized Hall plateau with Ryx = h/3e2. These observations show that interaction-induced symmetry breaking in MATBG leads to zero-field ground states that include almost degenerate and closely competing Chern insulators, and that states with larger Chern numbers couple most strongly to the B-field. By providing the first demonstration of a system that allows gate-induced transitions between magnetic and superconducting phases, our observations mark a major milestone in the creation of a new generation of quantum electronics.

Josephson junctions (JJs) are ubiquitous superconducting devices, enabling high sensitivity magnetometers and voltage amplifiers, as well as forming the basis of high performance cryogenic computer and superconducting quantum computers. While JJ performance can be degraded by quasiparticles (QPs) formed from broken Cooper pairs, this phenomenon also opens opportunities to sensitively detect electromagnetic radiation. Here we demonstrate single near-infrared photon detection by coupling photons to the localized surface plasmons of a graphene-based JJ. Using the photon-induced switching statistics of the current-biased JJ, we reveal the critical role of QPs generated by the absorbed photon in the detection mechanism. The photon-sensitive JJ will enable a high-speed, low-power optical interconnect for future JJ-based computing architectures., Comment: 12 pages, 9 figures, and 4 tables

We derive the exact insulator ground states of the projected Hamiltonian of magic-angle twisted bilayer graphene (TBG) flat bands with Coulomb interactions in various limits, and study the perturbations away from these limits. We define the (first) chiral limit where the AA stacking hopping is zero, and a flat limit with exactly flat bands. In the chiral-flat limit, the TBG Hamiltonian has a U(4)$\times$U(4) symmetry, and we find that the exact ground states at integer filling $-4\le \nu\le 4$ relative to charge neutrality are Chern insulators of Chern numbers $\nu_C=4-|\nu|,2-|\nu|,\cdots,|\nu|-4$, all of which are degenerate. This confirms recent experiments where Chern insulators are found to be competitive low-energy states of TBG. When the chiral-flat limit is reduced to the nonchiral-flat limit which has a U(4) symmetry, we find $\nu=0,\pm2$ has exact ground states of Chern number $0$, while $\nu=\pm1,\pm3$ has perturbative ground states of Chern number $\nu_C=\pm1$, which are U(4) ferromagnetic. In the chiral-nonflat limit with a different U(4) symmetry, different Chern number states are degenerate up to second order perturbations. In the realistic nonchiral-nonflat case, we find that the perturbative insulator states with Chern number $\nu_C=0$ ($0<|\nu_C|<4-|\nu|$) at integer fillings $\nu$ are fully (partially) intervalley coherent, while the insulator states with Chern number $|\nu_C|=4-|\nu|$ are valley polarized. However, for $0<|\nu_C|\le4-|\nu|$, the fully intervalley coherent states are highly competitive (0.005meV/electron higher). At nonzero magnetic field $|B|>0$, a first-order phase transition for $\nu=\pm1,\pm2$ from Chern number $\nu_C=\text{sgn}(\nu B)(2-|\nu|)$ to $\nu_C=\text{sgn}(\nu B)(4-|\nu|)$ is expected, which agrees with recent experimental observations. Lastly, the TBG Hamiltonian reduces into an extended Hubbard model in the stabilizer code limit., Comment: 17+35 pages, 3+2 figures. Published version

We introduce a new method to continuously map inhomogeneities of a moir\'e lattice and apply it to large-area topographic images we measure on open-device twisted bilayer graphene (TBG). We show that the variation in the twist angle of a TBG device, which is frequently conjectured to be the reason for differences between devices with a supposed similar twist angle, is about 0.08{\deg} around the average of 2.02{\deg} over areas of several hundred nm, comparable to devices encapsulated between hBN slabs. We distinguish between an effective twist angle and local anisotropy and relate the latter to heterostrain. Our results imply that for our devices, twist angle heterogeneity has a roughly equal effect to the electronic structure as local strain. The method introduced here is applicable to results from different imaging techniques, and on different moir\'e materials., Comment: 4 figures in main text. Supporting info included

The propagation of Dirac fermions in graphene through a long-period periodic potential would result in a band folding together with the emergence of a series of cloned Dirac points (DPs). In highly aligned graphene/hexagonal boron nitride (G/hBN) heterostructures, the lattice mismatch between the two atomic crystals generates a unique kind of periodic structure known as a moir\'e superlattice. Of particular interests is the emergent phenomena related to the reconstructed band-structure of graphene, such as the Hofstadter butterfly, topological currents, gate dependent pseudospin mixing, and ballistic miniband conduction. However, most studies so far have been limited to the lower-order minibands, e.g. the 1st and 2nd minibands counted from charge neutrality, and consequently the fundamental nature of the reconstructed higher-order miniband spectra still remains largely unknown. Here we report on probing the higher-order minibands of precisely aligned graphene moir\'e superlattices by transport spectroscopy. Using dual electrostatic gating, the edges of these high-order minibands, i.e. the 3rd and 4th minibands, can be reached. Interestingly, we have observed interband Landau level (LL) crossinginducing gap closures in a multiband magneto-transport regime, which originates from band overlap between the 2nd and 3rd minibands. As observed high-order minibands and LL reconstruction qualitatively match our simulated results. Our findings highlight the synergistic effect of minibands in transport, thus presenting a new opportunity for graphene electronic devices.

Heat capacity is an invaluable quantity in condensed matter physics, yet it has been so far experimentally inaccessible in two-dimensional (2D) van der Waals (vdW) materials, owing to their ultra-fast thermal relaxation times and the lack of suitable nano-scale thermometers. Here, we demonstrate a novel thermal relaxation calorimetry scheme that allows the first measurements of the electronic heat capacity of graphene Ce. It is enabled by the grouping of a radio-frequency Johnson noise thermometer, which can measure the electronic temperature Te with a measurement sensitivity of {\delta}Te ~ 20 mK, and an ultra-fast photo-mixed optical heater, which can simultaneously modulate Te with a frequency of up to {\Omega}=0.2 THz. This combination allows record sensitive and record fast measurements of the electronic heat capacity Ce < 10^(-19) J/K, with an electronic thermal relaxation time {\tau}e < 10^(-13), representing orders of magnitude improvements as compared to previous state-of-the-art calorimeters. These features embody a breakthrough in heat capacity metrology of nano-scale and low-dimensional systems, and provide a new avenue for the investigation of their thermodynamic quantities.

Flat-bands in magic angle twisted bilayer graphene (MATBG) have recently emerged as a rich platform to explore strong correlations, superconductivity and mag-netism. However, the phases of MATBG in magnetic field, and what they reveal about the zero-field phase diagram remain relatively unchartered. Here we use magneto-transport and Hall measurements to reveal a rich sequence of wedge-like regions of quantized Hall conductance with Chern numbers C = +(-)1, +(-)2, +(-)3, +(-)4 which nucleate from integer fillings of the moire unit cell v = +(-)3, +(-)2, +(-)1, 0 correspondingly. We interpret these phases as spin and valley polarized Chern insulators, equivalent to quantum Hall ferro-magnets. The exact sequence and correspondence of Chern numbers and filling factors suggest that these states are driven directly by electronic interactions which specifically break time-reversal symmetry in the system. We further study quantum magneto-oscillation in the yet unexplored higher energy dispersive bands with a Rashba-like dis-persion. Analysis of Landau level crossings enables a parameter-free comparison to a newly derived magic series of level crossings in magnetic field and provides constraints on the parameters w0 and w1 of the Bistritzer-MacDonald MATBG Hamiltonian. Over-all, our data provides direct insights into the complex nature of symmetry breaking in MATBG and allows for quantitative tests of the proposed microscopic scenarios for its electronic phases.

Moir\'e superlattices in two-dimensional (2D) van der Waals (vdW) heterostructures provide 20 an efficient way to engineer electron band properties. The recent discovery of exotic quantum phases and their interplay in twisted bilayer graphene (tBLG) has built this moir\'e system one of the most renowned condensed matter platforms (1-10). So far the studies of tBLG has been mostly focused on the lowest two flat moir\'e bands at the first magic angle {\theta}m1 ~ 1.1{\deg}, leaving high-order moir\'e bands and magic angles largely unexplored. Here we report 25 an observation of multiple well-isolated flat moir\'e bands in tBLG close to the second magic angle {\theta}m2 ~ 0.5{\deg}, which cannot be explained without considering electron-election interactions. With high magnetic field magneto-transport measurements, we further reveal a qualitatively new, energetically unbound Hofstadter butterfly spectrum in which continuously extended quantized Landau level gaps cross all trivial band-gaps. The 30 connected Hofstadter butterfly strongly evidences the topologically nontrivial textures of the multiple moir\'e bands. Overall, our work provides a new perspective for understanding the quantum phases in tBLG and the fractal Hofstadter spectra of multiple topological bands.

Photodetectors based on nano-structured superconducting thin films are currently some of the most sensitive quantum sensors and are key enabling technologies in such broad areas as quantum information, quantum computation and radio-astronomy. However, their broader use is held back by the low operation temperatures which require expensive cryostats. Here, we demonstrate a nitrogen cooled superconducting transition edge sensor, which shows orders of magnitude improved performance characteristics of any superconducting detector operated above 77K, with a responsivity of 9.61x10^4 V/W, noise equivalent power of 15.9 fW/Hz-1/2 and operation speeds up to GHz frequencies. It is based on van der Waals heterostructures of the high temperature superconductor Bi2Sr2CaCu2O8, which are shaped into nano-wires with ultra-small form factor. To highlight the versatility of the detector we demonstrate its fabrication and operation on a telecom grade SiN waveguide chip. Our detector significantly relaxes the demands of practical applications of superconducting detectors and displays its huge potential for photonics based quantum applications.

Transport experiments in twisted bilayer graphene revealed multiple superconducting domes separated by correlated insulating states. These properties are generally associated with strongly correlated states in a flat mini-band of the hexagonal moir\'e superlattice as it was predicted by band structure calculations. Evidence for such a flat band comes from local tunneling spectroscopy and electronic compressibility measurements, reporting two or more sharp peaks in the density of states that may be associated with closely spaced van Hove singularities. Direct momentum resolved measurements proved difficult though. Here, we combine different imaging techniques and angle resolved photoemission with simultaneous real and momentum space resolution (nano-ARPES) to directly map the band dispersion in twisted bilayer graphene devices near charge neutrality. Our experiments reveal large areas with homogeneous twist angle that support a flat band with spectral weight that is highly localized in momentum space. The flat band is separated from the dispersive Dirac bands which show multiple moir\'e hybridization gaps. These data establish the salient features of the twisted bilayer graphene band structure., Comment: Submitted to Nature Materials. Nat. Phys. (2020)

The coexistence of superconducting and correlated insulating states in magic-angle twisted bilayer graphene prompts fascinating questions about the relationship of these orders. Independent control of the microscopic mechanisms governing these phases could help uncover their individual roles and shed light on their intricate interplay. Here we report on direct tuning of electronic interactions in this system by changing its separation from a metallic screening layer. We observe quenching of correlated insula-tors in devices with screening layer separations that are smaller than a typical Wannier orbital size of 15nm, and with the twist angles slightly deviating from the magic value 1.10 plus(minus) 0.05 degrees. Upon extinction of the insulating orders, the vacated phase space is taken over by superconducting domes that feature critical temperatures comparable to those in the devices with strong insulators. In addition, we find that insulators at half-filling can reappear in small out-of-plane magnetic fields of 0.4 T, giving rise to quantized Hall states with a Chern number of 2. Our study suggests reexamination of the often-assumed mother-child relation between the insulating and superconducting phases in moire graphene, and illustrates a new approach to directly probe microscopic mechanisms of superconductivity in strongly-correlated systems.

The effective interaction between electrons in two-dimensional materials can be modified by their environment, enabling control of electronic correlations and phases. Here, we study the dependence of electronic correlations in twisted bilayer graphene (tBLG) on the separation to the metallic gate(s) in two device configurations. Using an atomistic tight-binding model, we determine the Hubbard parameters of the flat bands as a function of gate separation, taking into account the screening from the metallic gate(s), the dielectric spacer layers and the tBLG itself. We determine the critical gate separation at which the Hubbard parameters become smaller than the critical value required for a transition from a correlated insulator state to a (semi-)metallic phase. We show how this critical gate separation depends on twist angle, doping and the device configuration. These calculations may help rationalise the reported differences between recent measurements of tBLG's phase diagram and suggests that correlated insulator states can be screened out in devices with thin dielectric layers., Comment: 9 pages, 9 figures

The electronic properties of twisted bilayer graphene (TBG) can be dramatically different from those of a single graphene layer, in particular when the two layers are rotated relative to each other by a small angle. TBG has recently attracted a great deal of interest, sparked by the discovery of correlated insulating and superconducting states, for twist angle $\theta$ close to a so-called 'magic angle' $\approx 1.1{\deg}$. In this work, we unveil, via near-field optical microscopy, a collective plasmon mode in charge-neutral TBG near the magic angle, which is dramatically different from the ordinary single-layer graphene intraband plasmon. In selected regions of our samples, we find a gapped collective mode with linear dispersion, akin to the bulk magnetoplasmons of a two-dimensional (2D) electron gas. We interpret these as interband plasmons and associate those with the optical transitions between quasi-localized states originating from the moir\'e superlattice. Surprisingly, we find a higher plasmon group velocity than expected, which implies an enhanced strength of the corresponding optical transition. This points to a weaker interlayer coupling in the AA regions. These intriguing optical properties offer new insights, complementary to other techniques, on the carrier dynamics in this novel quantum electron system., Comment: 36 pages, 15 figures

Sensitive microwave detectors are critical instruments in radioastronomy, dark matter axion searches, and superconducting quantum information science. The conventional strategy towards higher-sensitivity bolometry is to nanofabricate an ever-smaller device to augment the thermal response. However, this direction is increasingly more difficult to obtain efficient photon coupling and maintain the material properties in a device with a large surface-to-volume ratio. Here we advance this concept to an ultimately thin bolometric sensor based on monolayer graphene. To utilize its minute electronic specific heat and thermal conductivity, we develop a superconductor-graphene-superconductor (SGS) Josephson junction bolometer embedded in a microwave resonator of resonant frequency 7.9 GHz with over 99\% coupling efficiency. From the dependence of the Josephson switching current on the operating temperature, charge density, input power, and frequency, we demonstrate a noise equivalent power (NEP) of 7 $\times 10^{-19}$ W/Hz$^{1/2}$, corresponding to an energy resolution of one single photon at 32 GHz and reaching the fundamental limit imposed by intrinsic thermal fluctuation at 0.19 K., Comment: 8 pages, 4 figures

Superconductivity often occurs close to broken-symmetry parent states and is especially common in doped magnetic insulators. When twisted close to a magic relative orientation angle near 1 degree, bilayer graphene has flat moire superlattice minibands that have emerged as a rich and highly tunable source of strong correlation physics, notably the appearance of superconductivity close to interaction-induced insulating states. Here we report on the fabrication of bilayer graphene devices with exceptionally uniform twist angles. We show that the reduction in twist angle disorder reveals insulating states at all integer occupancies of the four-fold spin/valley degenerate flat conduction and valence bands, i.e. at moire band filling factors nu = 0, +(-) 1, +(-) 2, +(-) 3, and superconductivity below critical temperatures as high as 3 K close to - 2 filling. We also observe three new superconducting domes at much lower temperatures close to the nu = 0 and nu = +(-) 1 insulating states. Interestingly, at nu = +(-) 1 we find states with non-zero Chern numbers. For nu = - 1 the insulating state exhibits a sharp hysteretic resistance enhancement when a perpendicular magnetic field above 3.6 tesla is applied, consistent with a field driven phase transition. Our study shows that symmetry-broken states, interaction driven insulators, and superconducting domes are common across the entire moire flat bands, including near charge neutrality.

The ability to confine light into tiny spatial dimensions is important for applications such as microscopy, sensing and nanoscale lasers. While plasmons offer an appealing avenue to confine light, Landau damping in metals imposes a trade-off between optical field confinement and losses. We show that a graphene-insulator-metal heterostructure can overcome that trade-off, and demonstrate plasmon confinement down to the ultimate limit of the lengthscale of one atom. This is achieved by far-field excitation of plasmon modes squeezed into an atomically thin hexagonal boron nitride dielectric h-BN spacer between graphene and metal rods. A theoretical model which takes into account the non-local optical response of both graphene and metal is used to describe the results. These ultra-confined plasmonic modes, addressed with far-field light excitation, enables a route to new regimes of ultra-strong light-matter interactions., Comment: 17 pages, 4 figures

Ultrafast electrically driven nanoscale light sources are critical components in nanophotonics. Compound semiconductor-based light sources for the nanophotonic platforms have been extensively investigated over the past decades. However, monolithic ultrafast light sources with a small footprint remain a challenge. Here, we demonstrate electrically driven ultrafast graphene light emitters that achieve light pulse generation with up to 10 GHz bandwidth, across a broad spectral range from the visible to the near-infrared. The fast response results from ultrafast charge carrier dynamics in graphene, and weak electron-acoustic phonon-mediated coupling between the electronic and lattice degrees of freedom. We also find that encapsulating graphene with hexagonal boron nitride (hBN) layers strongly modifies the emission spectrum by changing the local optical density of states, thus providing up to 460 % enhancement compared to the grey-body thermal radiation for a broad peak centered at 720 nm. Furthermore, the hBN encapsulation layers permit stable and bright visible thermal radiation with electronic temperatures up to 2,000 K under ambient conditions, as well as efficient ultrafast electronic cooling via near-field coupling to hybrid polaritonic modes. These high-speed graphene light emitters provide a promising path for on-chip light sources for optical communications and other optoelectronic applications., Comment: 18 pages, 4 figures

Electrochemical intercalation is a powerful method for tuning the electronic properties of layered solids. In this work, we report an electro-chemical strategy to controllably intercalate lithium ions into a series of van der Waals (vdW) heterostructures built by sandwiching graphene between hexagonal boron nitride (h-BN). We demonstrate that encapsulating graphene with h-BN eliminates parasitic surface side reactions while simultaneously creating a new hetero-interface that permits intercalation between the atomically thin layers. To monitor the electrochemical process, we employ the Hall effect to precisely monitor the intercalation reaction. We also simultaneously probe the spectroscopic and electrical transport properties of the resulting intercalation compounds at different stages of intercalation. We achieve the highest carrier density $> 5 \times 10^{13} cm^{-2}$ with mobility $> 10^3 cm^2/(Vs)$ in the most heavily intercalated samples, where Shubnikov-de Haas quantum oscillations are observed at low temperatures. These results set the stage for further studies that employ intercalation in modifying properties of vdW heterostructures.

We propose to use graphene-based Josephson junctions (gJjs) to detect single photons in a wide electromagnetic spectrum from visible to radio frequencies. Our approach takes advantage of the exceptionally low electronic heat capacity of monolayer graphene and its constricted thermal conductance to its phonon degrees of freedom. Such a system could provide high sensitivity photon detection required for research areas including quantum information processing and radio-astronomy. As an example, we present our device concepts for gJj single photon detectors in both the microwave and infrared regimes. The dark count rate and intrinsic quantum efficiency are computed based on parameters from a measured gJj, demonstrating feasibility within existing technologies., Comment: 11 pages, 6 figures, and 1 table in the main text

Two-dimensional van der Waals materials have emerged as promising platforms for solid-state quantum information processing devices with unusual potential for heterogeneous assembly. Recently, bright and photostable single photon emitters were reported from atomic defects in layered hexagonal boron nitride (hBN), but controlling inhomogeneous spectral distribution and reducing multi-photon emission presented open challenges. Here, we demonstrate that strain control allows spectral tunability of hBN single photon emitters over 6 meV, and material processing sharply improves the single-photon purity. We report high single photon count rates exceeding 10^7 counts/sec at saturation, which is the highest single photon detection rate for room-temperature single photon emitters, to our knowledge. Furthermore, these emitters are stable to material transfer to other substrates. High-purity and photostable single photon emission at room temperature, together with spectral tunability and transferability, opens the door to scalable integration of high-quality quantum emitters in photonic quantum technologies.

In the effort to make 2D materials-based devices smaller, faster, and more efficient, it is important to control charge carrier at lengths approaching the nanometer scale. Traditional gating techniques based on capacitive coupling through a gate dielectric cannot generate strong and uniform electric fields at this scale due to divergence of the fields in dielectrics. This field divergence limits the gating strength, boundary sharpness, and pitch size of periodic structures, and restricts possible geometries of local gates (due to wire packaging), precluding certain device concepts, such as plasmonics and transformation optics based on metamaterials. Here we present a new gating concept based on a dielectric-free self-aligned electrolyte technique that allows spatially modulating charges with nanometer resolution. We employ a combination of a solid-polymer electrolyte gate and an ion-impenetrable e-beam-defined resist mask to locally create excess charges on top of the gated surface. Electrostatic simulations indicate high carrier density variations of $\Delta n =10^{14}\text{cm}^{-2}$ across a length of 10 nm at the mask boundaries on the surface of a 2D conductor, resulting in a sharp depletion region and a strong in-plane electric field of $6\times10^8 \text{Vm}^{-1}$ across the so-created junction. We apply this technique to the 2D material graphene to demonstrate the creation of tunable p-n junctions for optoelectronic applications. We also demonstrate the spatial versatility and self-aligned properties of this technique by introducing a novel graphene thermopile photodetector.

The quantum Hall (QH) effect supports a set of chiral edge states at the boundary of a 2-dimensional electron gas (2DEG) system. A superconductor (SC) contacting these states induces correlation of the quasi-particles in the dissipationless 1D chiral QH edge states. If the superconducting electrode is narrower than the superconducting coherence length, the incoming electron are correlated to outgoing hole along the chiral edge state by the Andreev process. In order to realize this crossed Andreev conversion (CAC), it is necessary to fabricate highly transparent and nanometer-scale superconducting junctions to QH system. Here we report the observation of CAC in a graphene QH system contacted with a nanostructured NbN superconducting electrode. The chemical potential of the edge states across the superconducting electrode exhibits a sign reversal, providing direct evidence of CAC. This hybrid SC/QH system is a novel route to create isolated non-Abelian anyonic zero modes, in resonance with the chiral QH edge., Comment: 10 pages, 8 figures

Ongoing experimental progress in the preparation of ultra-clean graphene/superconductor (SC) interfaces enabled the recent observation of specular interband Andreev reflections (AR) at bilayer graphene (BLG)/NbSe$_{2}$ van der Waals interfaces [Nature Physics 12, (2016)]. Motivated by this experiment we theoretically study the differential conductance across a BLG/SC interface at the continuous transition from high to ultra-low Fermi energies $E_{F}$ in BLG. Using the Bogoliubov-deGennes equations and the Blonder-Tinkham-Klapwijk formalism we derive analytical expressions for the differential conductance across the BLG/SC interface. We find a characteristic signature of the cross-over from intra-band retro- (high $E_{F}$) to inter-band specular (low $E_{F}$) ARs, that manifests itself in a strongly suppressed interfacial conductance when the excitation energy $|\varepsilon |=|E_{F}|<\Delta $ (the SC gap). The sharpness of these conductance dips is strongly dependent on the size of the potential step at the BLG/SC interface $U_{0}$.