1. N-type doping of Ge by As implantation and excimer laser annealing.
- Author
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Milazzo, R., Napolitani, E., Impellizzeri, G., Fisicaro, G., Boninelli, S., Cuscuna, M., De Salvador, D., Mastromatteo, M., Italia, M., Magna, A. La, Fortunato, G., Priolo, F., Privitera, V., and Carnera, A.
- Subjects
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GERMANIUM , *ARSENIC , *DIFFUSION , *SOLUBILITY , *EXCIMER laser research , *ENERGY density - Abstract
The diffusion and activation of arsenic implanted into germanium at 40 keV with maximum concentrations below and above the solid solubility (8 x 1019 cm-3been studied, both experimentally and theoretically, after excimer laser annealing (λ = 308 nm) in the melting regime with different laser energy densities and single or multiple pulses. Arsenic is observed to diffuse similarly for different fluences with no out-diffusion and no formation of pile-up at the maximum melt depth. The diffusion profiles have been satisfactorily simulated by assuming two diffusivity states of As in the molten Ge and a non-equilibrium segregation at the maximum melt depth. The electrical activation is partial and decreases with increasing the chemical concentration with a saturation of the active concentration at 1 x 1020 cm-3, which represents a new record for the As-doped Ge system. [ABSTRACT FROM AUTHOR]
- Published
- 2014
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