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Synchronization of large spin Hall nano-oscillator (SHNO) arrays is an appealing approach toward ultrafast non-conventional computing. However, interfacing to the array, tuning its individual oscillators and providing built-in memory units remain substantial challenges. Here, we address these challenges using memristive gating of W/CoFeB/MgO/AlOx-based SHNOs. In its high resistance state, the memristor modulates the perpendicular magnetic anisotropy at the CoFeB/MgO interface by the applied electric field. In its low resistance state the memristor adds or subtracts current to the SHNO drive. Both electric field and current control affect the SHNO auto-oscillation mode and frequency, allowing us to reversibly turn on/off mutual synchronization in chains of four SHNOs. We also demonstrate that two individually controlled memristors can be used to tune a four-SHNO chain into differently synchronized states. Memristor gating is therefore an efficient approach to input, tune and store the state of SHNO arrays for non-conventional computing models., QC 20220607

In spin Hall nano-oscillators (SHNOs), pure spin currents drive local regions of magnetic films and nanostructures into auto-oscillating precession. If such regions are placed in close proximity to each other they can interact and may mutually synchronize. Here, we demonstrate robust mutual synchronization of two-dimensional SHNO arrays ranging from 2 × 2 to 8 × 8 nano-constrictions, observed both electrically and using micro-Brillouin light scattering microscopy. On short time scales, where the auto-oscillation linewidth Δ f is governed by white noise, the signal quality factor, Q= f∕ Δ f, increases linearly with the number of mutually synchronized nano-constrictions (N), reaching 170,000 in the largest arrays. We also show that SHNO arrays exposed to two independently tuned microwave frequencies exhibit the same synchronization maps as can be used for neuromorphic vowel recognition. Our demonstrations may hence enable the use of SHNO arrays in two-dimensional oscillator networks for high-quality microwave signal generation and ultra-fast neuromorphic computing., QC 20200329

Spin-orbit torque (SOT) can drive sustained spin wave (SW) auto-oscillations in a class of emerging microwave devices known as spin Hall nano-oscillators (SHNOs), which have highly nonlinear properties governing robust mutual synchronization at frequencies directly amenable to high-speed neuromorphic computing. However, all demonstrations have relied on localized SW modes interacting through dipolar coupling and/or direct exchange. As nanomagnonics requires propagating SWs for data transfer and additional computational functionality can be achieved using SW interference, SOT-driven propagating SWs would be highly advantageous. Here, we demonstrate how perpendicular magnetic anisotropy can raise the frequency of SOT-driven auto-oscillations in magnetic nanoconstrictions well above the SW gap, resulting in the efficient generation of field and current tunable propagating SWs. Our demonstration greatly extends the functionality and design freedom of SHNOs, enabling long-range SOT-driven SW propagation for nanomagnonics, SW logic, and neuromorphic computing, directly compatible with CMOS technology., QC 20191118

Short wavelength exchange-dominated propagating spin waves will enable magnonic devices to operate at higher frequencies and higher data transmission rates. While giant magnetoresistance (GMR)-based magnetic nanocontacts are efficient injectors of propagating spin waves, the generated wavelengths are 2.6 times the nano-contact diameter, and the electrical signal strength remains too weak for applications. Here we demonstrate nano-contact-based spin wave generation in magnetic tunnel junctions and observe large-frequency steps consistent with the hitherto ignored possibility of second-and third-order propagating spin waves with wavelengths of 120 and 74 nm, i.e., much smaller than the 150-nm nanocontact. Mutual synchronization is also observed on all three propagating modes. These higher-order propagating spin waves will enable magnonic devices to operate at much higher frequencies and greatly increase their transmission rates and spin wave propagating lengths, both proportional to the much higher group velocity., QC 20181106

Time-resolved scanning Kerr microscopy (TRSKM) was used to study precessional magnetization dynamics induced by a radio frequency (RF) current within a Al2O3/Py(5 nm)/Pt(6 nm)/Au(150 nm) spin Hall nano-oscillator structure. The Au layer was formed into two needle-shaped electrical contacts that concentrated the current in the center of a Py/Pt mesa of 4 mu m diameter. Due to the spin Hall effect, current within the Pt layer drives a spin current into the Py layer, exerting a spin transfer torque (STT). By injecting RF current and exploiting the phase sensitivity of TRSKM and the symmetry of the device structure, the STT and Oersted field torques have been separated and spatially mapped. The STT and torque due to the in-plane Oersted field are observed to exhibit minima at the device center that is ascribed to spreading of RF current that is not observed for DC current. Torques associated with the RF current may destabilize the position of the self-localized bullet mode excited by the DC current and inhibit injection locking. The present study demonstrates the need to characterize both DC and RF current distributions carefully., QC 20190121

Time-resolved scanning Kerr microscopy (TRSKM) has been used to image precessional magnetization dynamics excited by a DC current within a nano-contact (NC) spin Hall nanooscillator (SHNO). Injection of a radio frequency (RF) current was used to phase lock the SHNO to TRSKM. The out of plane magnetization was detected by means of the polar magneto optical Kerr effect (MOKE). However, longitudinal MOKE images were dominated by an artifact arising from the edges of the Au NCs. Time resolved imaging revealed the simultaneous excitation of a nonlinear "bullet" mode at the centre of the device, once the DC current exceeded a threshold value, and ferromagnetic resonance (FMR) induced by the RF current. However, the FMR response observed for sub-critical DC current values exhibits an amplitude minimum at the centre, which is attributed to spreading of the RF spin current due to the reactance of the device structure. This FMR response can be subtracted to yield images of the bullet mode. As the DC current is increased above threshold, the bullet mode appears to increase in size, suggesting increased translational motion. The reduced spatial overlap of the bullet and FMR modes, and this putative translational motion, may impede the injection locking and contribute to the reduced locking range observed within NC-SHNO devices. This illustrates a more general need to control the geometry of an injection-locked oscillator so that the autonomous dynamics of the oscillator exhibit strong spatial overlap with those resulting from the injected signal.., QC 20181126

The spin Hall effect in a non-magnetic metal with spin-orbit coupling injects transverse spin currents into adjacent magnetic layers, where the resulting spin transfer torque can drive spin wave auto-oscillations. Such spin Hall nano-oscillators (SHNOs) hold great promise as extremely compact and broadband microwave signal generators and magnonic spin wave injectors. Here we show that SHNOs can also be mutually synchronized with unprecedented efficiency. We demonstrate mutual synchronization of up to nine individual SHNOs, each separated by 300 nm. Through further tailoring of the connection regions we can extend the synchronization range to 4 mu m. The mutual synchronization is observed electrically as an increase in the power and coherence of the microwave signal, and confirmed optically using micro-Brillouin light scattering microscopy as two spin wave regions sharing the same spectral content, in agreement with our micromagnetic simulations., QC 20170329