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72 results on '"Dussart, Rémi"'

1. Future of plasma etching for microelectronics: Challenges and opportunities

Author

Oehrlein, Gottlieb S., primary, Brandstadter, Stephan M., additional, Bruce, Robert L., additional, Chang, Jane P., additional, DeMott, Jessica C., additional, Donnelly, Vincent M., additional, Dussart, Rémi, additional, Fischer, Andreas, additional, Gottscho, Richard A., additional, Hamaguchi, Satoshi, additional, Honda, Masanobu, additional, Hori, Masaru, additional, Ishikawa, Kenji, additional, Jaloviar, Steven G., additional, Kanarik, Keren J., additional, Karahashi, Kazuhiro, additional, Ko, Akiteru, additional, Kothari, Hiten, additional, Kuboi, Nobuyuki, additional, Kushner, Mark J., additional, Lill, Thorsten, additional, Luan, Pingshan, additional, Mesbah, Ali, additional, Miller, Eric, additional, Nath, Shoubhanik, additional, Ohya, Yoshinobu, additional, Omura, Mitsuhiro, additional, Park, Chanhoon, additional, Poulose, John, additional, Rauf, Shahid, additional, Sekine, Makoto, additional, Smith, Taylor G., additional, Stafford, Nathan, additional, Standaert, Theo, additional, and Ventzek, Peter L. G., additional

Published
2024
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2. Integrated micro-plasmas in silicon operating in helium

Author

Dussart, Remi, Overzet, Lawrence J., Lefaucheux, P, Dufour, Thierry, Kulsreshath, M, Mandra, Monali, Tillocher, Thomas, Aubry, O, Dozias, S, Ranson, P, and Goeckner, M

Subjects
Physics - Instrumentation and Detectors, Physics - Plasma Physics
Abstract

Microplasma arrays operating in helium in a DC regime have been produced in silicon microre-actors. Cathode boundary layer (CBL) type microdevices were elaborated using clean room facilities and semiconductor processing techniques. Ignition of the micro-discharge arrays having either 50 or 100 m diameter cavities was studied. Two different structures (isotropically etched or anisotropically etched cavity) and various conditions (the two different voltage polarities, pressures etc.) were investigated. 100 microdis-charges of 50 m diameter could be ignited in parallel at 1000 torr. At high current, some parasitic and transient sparks appeared at the edge of the sample. When the polarization was reversed (cathode side corresponding the opened electrode), more current was needed to light all the microdischarges. A thermally affected zone around the hole on the anode side was obtained after operation.

Published
2016
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3. Experimental study and simulation of a micro-discharge with limited cathode area

Author

Dufour, Thierry, Overzet, Lawrence J., Dussart, Remi, Pitchford, L. C., Sadeghi, N, Lefaucheux, P, Kulsreshath, M, and Ranson, P

Subjects
Physics - Plasma Physics
Abstract

We report in this paper simulation results and experimental measurements to characterize a micro-discharge generated in a single micro cavity device operating in helium. By spatially limiting the cathode surface area using a dielectric layer, we demonstrate the ability of the micro-discharge to work in a steady-state abnormal glow regime. The physical properties of this regime are discussed.

Published
2016
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4. Direct current parallel microdischarges in helium

Author

Dufour, Thierry, Dussart, Remi, Overzet, Lawrence J., Lefaucheux, Philippe, Ranson, Pierre, Lee, J. -B, Mandra, Monali, Goeckner, Matthew, and Sadeghi, Nader

Subjects
Physics - Plasma Physics
Abstract

Parallel Micro Hollow Cathodes Discharges are characterised by electrical and spectroscopic studies and by using an ICCD camera. V-I curves present a hysteresis cycle between Townsend and normal glow regimes. For I d =4-10mA, gas temperature ranges between 300-500{\textdegree}C. When the diameter of a hole decreases, a more significant discharge voltage is needed.

Published
2016

5. RF impedance measurements of DC atmospheric micro-discharges

Author

Overzet, Lawrence J., Jung, D., Mandra, Monali, Goeckner, Matthew, Dufour, Thierry, Dussart, Remi, and Lefaucheux, Philippe

Subjects
Physics - Plasma Physics
Abstract

The available diagnostics for atmospheric micro-plasmas remain limited and relatively complex to implement; so we present a radio-frequency technique for diagnosing a key parameter here. The technique allows one to estimate the dependencies of the electron density by measuring the RF-impedance of the micro-plasma and analyzing it with an appropriate equivalent circuit. This technique is inexpensive, can be used in real time and gives reasonable results for argon and helium DC micro-plasmas in holes over a wide pressure range. The electron density increases linearly with current in the expected range consistent with normal glow discharge behavior.

Published
2016
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6. Direct measurements of the energy flux due to chemical reactions at the surface of a silicon sample interacting with a SF6 plasma

Author

Dussart, Remi, Thomann, Anne-Lise, Pichon, Laurianne E., Bedra, Larbi, Semmar, Nadjib, Lefaucheux, Philippe, Mathias, Jacky, and Tessier, Yves

Subjects
Physics - Plasma Physics
Abstract

Energy exchanges due to chemical reactions between a silicon surface and a SF6 plasma were directly measured using a heat flux microsensor (HFM). The energy flux evolution was compared with those obtained when only few reactions occur at the surface to show the part of chemical reactions. At 800 W, the measured energy flux due to chemical reactions is estimated at about 7 W.cm\^{-2} against 0.4 W.cm\^{-2} for ion bombardment and other contributions. Time evolution of the HFM signal is also studied. The molar enthalpy of the reaction giving SiF4 molecules was evaluated and is consistent with values given in literature., Comment: 3 pages

Published
2008
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9. Evaluation of Bosch processing at cryogenic temperatures

Author

Nos, Jack, Tillocher, T., Lefaucheux, Philippe, Dussart, Rémi, Girard, Aurélie, Cardinaud, Christophe, Boufnichel, Mohamed, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), Môle Armoricain de Recherche sur la SOciété de l'information et des usages d'INternet (MARSOUIN), Université de Rennes (UR)-Université de Bretagne Sud (UBS)-Ecole Nationale de la Statistique et de l'Analyse de l'Information [Bruz] (ENSAI)-Université de Brest (UBO)-Institut Mines-Télécom [Paris] (IMT)-Université de Rennes 2 (UR2)-Université Bretagne Loire (UBL)-IMT Atlantique (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT), Laboratoire d'économie et de management de Nantes Atlantique (LEMNA), Institut d'Économie et de Management de Nantes - Institut d'Administration des Entreprises - Nantes (IEMN-IAE Nantes), Université de Nantes (UN)-Université de Nantes (UN)-FR 3473 Institut universitaire Mer et Littoral (IUML), Le Mans Université (UM)-Université d'Angers (UA)-Université de Nantes (UN)-École Centrale de Nantes (ECN)-Université de Bretagne Sud (UBS)-Institut Français de Recherche pour l'Exploitation de la Mer (IFREMER)-Centre National de la Recherche Scientifique (CNRS)-Le Mans Université (UM)-Université d'Angers (UA)-Université de Nantes (UN)-École Centrale de Nantes (ECN)-Université de Bretagne Sud (UBS)-Institut Français de Recherche pour l'Exploitation de la Mer (IFREMER)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), and ANR-20-CE24-0014,PSICRYO,Etude fondamentale des interactions plasma-surface dans les procédés de gravure cryogénique avancés(2020)

Subjects
[PHYS]Physics [physics]
Abstract

Bosch processing is an etching technique extensively used in the semiconductor industry towards the obtention of deep aspect ratio features which are necessary for MEMS and TSV applications [1,2]. The process consists in the repetition of an isotropic etching step using SF6 plasma followed by a C4F8 plasma step to passivate the trench sidewalls in order to achieve anisotropic profiles [2,3]. Although other techniques can be used towards deep silicon etching, such as standard cryoetching and the STiGer process, Bosch process offers less constraints as it is performed at ambient temperature and is very robust [1]. However, the main difficulty of this process is the gradual accumulation of fluorocarbonated species on the reactor sidewalls which leads to process deviations. Subsequently, different solutions have been developed to increase process stability and reduce the occurrence of reactor cleanings such as the development of heater liners on the reactor edges to heat the sidewalls above the condensation temperature of the fluorocarbonated polymers formed during passivation steps [4]. In comparison, cryogenic processes present the advantage of enhanced process stability as the reactive species mainly interact with the cooled substrate due to its cryogenic temperature. However, there is no significant study which attests of the impact of performing Bosch process at cryogenic temperatures and the impact of temperature in general on the etching profiles.In this research study, a given set of Bosch process parameters were performed at different temperatures to evaluate the evolution of the etching profile. It will be shown that Bosch process is effectively temperature dependent and that the necessary C4F8 passivating gas flow can be significantly reduced at cryogenic temperatures towards the obtention of anisotropic profiles (Fig. 1).Figure 1: Comparison of two etching profiles obtained with the same Bosch process parameters at different temperatures (Fig 1.a: T = -100°C and Fig 1.b: T = +20°C).Furthermore, a slight increase of the etch rate is observed at lower temperatures although it strengthens aspect ratio dependent etching (ARDE). A comprehensive study on the influence of temperature on the formation and properties of the flurorocarbonated passivation layer will be shown. Consequently, additional tests will be presented to evaluate whether the reduction of the necessary C4F8 gas flow at lower temperatures effectively results in the extension of process stability.The study was carried out using a cryogenic ICP reactor equipped with an in-situ ellipsometer. The tests were performed on Si coupons with a 1 μm surface SiO2 hard-mask layer. The hard-mask pattern consisted of trenches from 2 to 10 μm wide. These coupons were sticked on SiO2 4” carrier wafers using a specific thermal glue used for cryogenic process tests.This research project is supported by the CERTeM 2020 platform, which provides most of the equipment and funded by the European Union (FEDER fund) as well as the French National Research Agency (ANR PSICRYO fund).References 1. T. Tillocher, J. Nos, G. Antoun, P. Lefaucheux, M. Boufnichel, and R. Dussart, Comparison between Bosch and STiGer Processes for Deep Silicon Etching, Micromachines 12, 1143 (2021).2. M. A. Blauw, T. Zijlstra, and E. van der Drift, Balancing the Etching and Passivation in Time-Multiplexed Deep Dry Etching of Silicon, J. Vac. Sci. Technol. B Microelectron. Nanometer Struct. 19, 2930 (2001).3. F. Laemer, and A. Schilp, Method for Anisotropic Plasma Etching of Substrates, U.S. Patent 5498312A (1996).4. M. Puech, Heating Jacket for Plasma Etching Reactor, and Etching Method Using Same, U.S. Patent 0224178A1 (2005).

Published
2023

11. SF6 Physisorption based cryo-ALE of silicon

Author

Nos, Jack, Antoun, Gaelle, Tillocher, Thomas, Lefaucheux, Philippe, Girard, Aurélie, Cardinaud, Christophe, Dussart, Rémi, Môle Armoricain de Recherche sur la SOciété de l'information et des usages d'INternet (MARSOUIN), Université de Rennes (UR)-Université de Bretagne Sud (UBS)-Ecole Nationale de la Statistique et de l'Analyse de l'Information [Bruz] (ENSAI)-Université de Brest (UBO)-Institut Mines-Télécom [Paris] (IMT)-Université de Rennes 2 (UR2)-Université Bretagne Loire (UBL)-IMT Atlantique (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT), Laboratoire d'économie et de management de Nantes Atlantique (LEMNA), Institut d'Économie et de Management de Nantes - Institut d'Administration des Entreprises - Nantes (IEMN-IAE Nantes), Université de Nantes (UN)-Université de Nantes (UN)-FR 3473 Institut universitaire Mer et Littoral (IUML), Le Mans Université (UM)-Université d'Angers (UA)-Université de Nantes (UN)-École Centrale de Nantes (ECN)-Université de Bretagne Sud (UBS)-Institut Français de Recherche pour l'Exploitation de la Mer (IFREMER)-Centre National de la Recherche Scientifique (CNRS)-Le Mans Université (UM)-Université d'Angers (UA)-Université de Nantes (UN)-École Centrale de Nantes (ECN)-Université de Bretagne Sud (UBS)-Institut Français de Recherche pour l'Exploitation de la Mer (IFREMER)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), and ANR-20-CE24-0014,PSICRYO,Etude fondamentale des interactions plasma-surface dans les procédés de gravure cryogénique avancés(2020)

Subjects
[PHYS]Physics [physics]
Abstract

International audience; Cryogenic Atomic Layer Etching (Cryo-ALE) using C4F8 as a precursor gas has been previously presented as an alternative method to achieve ALE of SiO2. In this process, C4F8 is injected in gas phase during the “chemical modification” step, in order to physisorb on a cooled SiO2 surface. The etching step is then achieved using an Ar plasma with a low energy ion bombardment. The temperature window of this process was between -120°C and -90°C 1,2. A self-limiting etching regime was obtained with a regular etch per cycle (EPC) through several tens of nanometers which demonstrates the process stability without any contamination of the reactor walls. In this paper, we show the results using SF6 molecules as precursors for cryo-ALE of silicon.In 1996, Royer et al. studied the chemisorption of sulfur and fluorine on Si during a simultaneous exposure to SF6 gas and Ne+ ion beam. In this work, they showed by XPS measurements that the fluorine quantity on the Si surface tends to increase as the temperature decreases, for a process window between 20°C and 130°C 3. Therefore, a cryo-ALE study based on SF6 physisorption was carried out to extend the use of this alternative approach to other materials.The work presented in this paper was carried out using a cryogenic ICP reactor equipped with in-situ diagnostics. Mass spectrometry measurements enabled to characterize the SF6 physisorption and its surface residence time at different temperatures. Spectroscopic ellipsometry was used to monitor the etching rate and to characterize the sample surface at the nanoscale during the three process steps: SF6 physisorption, pumping and Ar plasma etching. Tests were performed on SiO2, Si3N4 and p-Si coupons glued on SiO2 6” carrier wafers.SF6 physisorption experiments will first be presented notably to determine the optimal temperature and purging time for the process. Subsequently, cryo-ALE test results on Si, SiO2 and Si3N4 will be shown. These results will finally be compared to the ones obtained previously using C4F8 physisorption.This research project is supported by the CERTeM 2020 platform, which provides most of the equipment and funded by the European Union (FEDER fund) as well as the French National Research Agency (ANR PSICRYO fund).1. Antoun et al., Appl. Phys. Lett. 115, 153109, 20192. Antoun et al., Sci. Rep. 10, 20213. Royer et al., J. Vac. Sci. Technol. A 14, 234–239, 1996

Published
2022

12. Cryo-ALE of Si and SiO2 using SF6 Physisorption

Author

Nos, Jack, Antoun, Gaelle, Tillocher, T., Lefaucheux, Philippe, Dussart, Rémi, Girard, Aurélie, Cardinaud, Christophe, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), Môle Armoricain de Recherche sur la SOciété de l'information et des usages d'INternet (MARSOUIN), Université de Rennes (UR)-Université de Bretagne Sud (UBS)-Ecole Nationale de la Statistique et de l'Analyse de l'Information [Bruz] (ENSAI)-Université de Brest (UBO)-Institut Mines-Télécom [Paris] (IMT)-Université de Rennes 2 (UR2)-Université Bretagne Loire (UBL)-IMT Atlantique (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT), Laboratoire d'économie et de management de Nantes Atlantique (LEMNA), Institut d'Économie et de Management de Nantes - Institut d'Administration des Entreprises - Nantes (IEMN-IAE Nantes), Université de Nantes (UN)-Université de Nantes (UN)-FR 3473 Institut universitaire Mer et Littoral (IUML), Le Mans Université (UM)-Université d'Angers (UA)-Université de Nantes (UN)-École Centrale de Nantes (ECN)-Université de Bretagne Sud (UBS)-Institut Français de Recherche pour l'Exploitation de la Mer (IFREMER)-Centre National de la Recherche Scientifique (CNRS)-Le Mans Université (UM)-Université d'Angers (UA)-Université de Nantes (UN)-École Centrale de Nantes (ECN)-Université de Bretagne Sud (UBS)-Institut Français de Recherche pour l'Exploitation de la Mer (IFREMER)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), and ANR-20-CE24-0014,PSICRYO,Etude fondamentale des interactions plasma-surface dans les procédés de gravure cryogénique avancés(2020)

Subjects
[PHYS]Physics [physics]
Abstract

Cryogenic Atomic Layer Etching (Cryo-ALE) using C4F8 as a precursor gas has beenpreviously presented as an alternative method to achieve ALE of SiO2. In this process, C4F8 isinjected in gas phase during the “chemical modification” step, in order to physisorb on a cooledSiO2 surface. The etching step is then achieved using an Ar plasma with a low energy ionbombardment. The temperature window of this process was between -120°C and -90°C 1,2.However, C4F8 injection at cryogenic temperatures does not allow high etching selectivity ofSiO2 over Si and Si3N4 as the deposited CFx passivation layer is not thick enough to efficientlypassivate Si and Si3N4 surfaces. As a result, another gas chemistry has to be tested in order toachieve higher etching selectivity.In 1996, Royer et al. studied the chemisorption of sulfur and fluorine on Si during asimultaneous exposure to SF6 gas and Ne+ ion beam. In this work, they showed by XPSmeasurements that the fluorine quantity on the Si surface tends to increase as the temperaturedecreases, for a process window between 20°C and -130°C 3. Therefore cryo-ALE study basedon SF6 physisorption was carried out to extend the use of this alternative approach to other materials.This work was carried out using a cryogenic ICP reactor equipped with in-situ diagnostics.Mass spectrometry measurements enabled to characterize the SF6 physisorption and its surfaceresidence time at different temperatures. Spectroscopic ellipsometry was used to monitor theetching rate and to characterize the sample surface at the nanoscale during the three processsteps: SF6 physisorption, pumping and Ar plasma etching. Tests were performed on SiO2, Si3N4and p-Si coupons glued on SiO2 6” carrier wafers.SF6 physisorption experiments will first be studied and presented notably to find the optimaltemperature and purging time for the process. Subsequently, cryo-ALE test results on Si, SiO2and Si3N4 will be shown. These results will finally be compared to the ones obtained previouslyusing C4F8 physisorption.This research project is supported by the CERTeM 2020 platform, which provides most of theequipment and funded by the European Union (FEDER fund) as well as the French NationalResearch Agency (ANR PSICRYO fund).1. Antoun et al., Appl. Phys. Lett. 115, 153109, 20192. Antoun et al., Sci. Rep. 10, 20213. Royer et al., J. Vac. Sci. Technol. A 14, 234–239, 1996

Published
2022

15. Nanoscale cryogenic process for highly selective etch of Si3N4 over Si

Author

Antoun, Gaelle, Tillocher, Thomas, Lefaucheux, Philippe, Girard, Aurélie, Cardinaud, Christophe, Faguet, Jacques, Maekawa, Kaoru, Zhang, Du, kim, hojin, wang, mingmei, Dussart, Rémi, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), and Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.PLASMA]Engineering Sciences [physics]/Plasmas, [SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2021

16. Atomic layer etching of Gallium nitride (GaN) using SF6/Ar plasmas

Author

Hamraoui, Lamiae, Antoun, Gaëlle, Tillocher, Thomas, Lefaucheux, Philippe, Dussart, Rémi, Boufnichel, Mohamed, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), and Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.PLASMA]Engineering Sciences [physics]/Plasmas, [SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2021

18. Cryogenic etching applied to next generation interconnects

Author

Dussart, Rémi, Tillocher, Thomas, Lefaucheux, Philippe, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), and MRS

Subjects
[SPI.PLASMA]Engineering Sciences [physics]/Plasmas, [SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2021

19. Bulk Titanium Micromachining using Deep Reactive Ion Etching

Author

Ettouri, Rim, Tillocher, Thomas, Lefaucheux, Philippe, Boutaud, Bertrand, Dussart, Rémi, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), and MISTIC

Subjects
[PHYS]Physics [physics], DRIE, bulk micromachining, [PHYS.PHYS.PHYS-PLASM-PH]Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], titanium, deep reactive ion etching, biomedical
Abstract

National audience; Over the past three decades, deep reactive ion etching (DRIE) has emerged as a promising technique for the fabrication of microtechnological devices. Successful etching depends on understanding the physico-chemical mechanisms involved and overcoming a series of challenges. Although this technology was originally developed for semiconductor manufacturing, it has shown great promise in other material-processing applications including bulk titanium etching. Titanium has been widely used as a biomedical material due to the excellent biocompatibility properties and biostability which results from the spontaneous formation of an oxide layer in air or blood. It has also proven to be a remarkably interesting material for bulk micromachining. So far, however, little work has been done to explore deep titanium etching.The current work details efforts to develop high-aspect-ratio bulk titanium etching processes for the design of microelectromechanical systems (MEMS). Reactive ion etching (RIE) using chlorine/fluorine gases and positive photoresist mask permit etch depths of up to several hundreds of microns. Our research is based on the application of titanium micromachining technology to the creation of biomedical devices. Among the advantages resulting from the overlap between the medical field and that of microfabrication are the reduction of costs, the miniaturization and the improvement of systems properties.

Published
2020

20. Cryogenic plasma-processed silicon microspikes as a high-performance anode material for lithium ion-batteries.

Author

Sakai, Joe, Luais, Erwann, Wolfman, Jérôme, Tillocher, Thomas, Dussart, Rémi, Tran-Van, Francois, and Ghamouss, Fouad

Subjects
LITHIUM ions, ALKALI metal ions, SILICON wafers, SEMICONDUCTOR wafers, MICROSTRUCTURE
Abstract

Micro- or nano-structuring is essential in order to use Si as an anode material for lithium ion batteries. In the present study, we attempted to use Si wafers with a spiky microstructure (SMS), the so-called black-Si, prepared by a cryogenic reactive ion etching process with an SF6/O2 gas mixture, for Li half-cells. The SMS with various sizes of spikes from 2.0 μm (height)x0.2 μm (width) to 21 μmx1.0 μm was etched by varying the SF6/O2 gas flow ratio. An anode of SMS of 11 lmheight in average showed stable charge/discharge capacity and Coulombic efficiency higher than 99% for more than 300 cycles, causing no destruction to any part of the Si wafer. The spiky structure turned columnar after cycles, suggesting graded lithiation levels along the length. The present results suggest a strategy to utilize a wafer-based Si material for an anode of a lithium ion battery durable against repetitive lithiation/delithiation cycles. [ABSTRACT FROM AUTHOR]

Published
2017
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21. Combined analysis methods for investigating titanium and nickel surface contamination after plasma deep etching.

Author

Ettouri, Rim, Tillocher, Thomas, Lefaucheux, Philippe, Boutaud, Bertrand, Fernandez, Vincent, Fairley, Neal, Cardinaud, Christophe, Girard, Aurélie, and Dussart, Rémi

Subjects
PLASMA etching, SURFACE contamination, X-ray photoelectron spectroscopy, TITANIUM, NICKEL-titanium alloys, ETCHING techniques
Abstract

Plasma etching techniques can result in damage and contamination of materials, which, if not removed, can interfere with further processing. Therefore, characterisation of the etched surface is necessary to understand the basic mechanisms involved in the etching process and enable process control and cleaning procedures to be developed. A detailed investigation by means of the combined use of scanning electron microscopy coupled with energy‐dispersive X‐ray spectrometry (SEM/EDS), X‐ray photoelectron spectroscopy (XPS) and optical microscopy (OM) has been carried out on deep titanium trenches etched by plasma. This innovative approach has provided a further insight into the microchemical structure of the surface contamination layer on both the titanium and the nickel hard mask surfaces. The described experiments were conducted on 25 to 100‐μm wide trenches, first etched in bulk titanium by an optimised Cl2/SF6/O2‐based inductively coupled plasma process, through an electroplated nickel hard mask. The results allow to identify chlorine, fluorine and carbon as the main contaminating agents of the nickel mask and to associate three oxidation states around the etched trenches highlighting certain specific aspects related to the passivation mechanism. These observations reinforce the scientific relevance of the combined use of complementary optical and imaging analytical techniques. [ABSTRACT FROM AUTHOR]

Published
2022
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22. Cryo atomic layer etching of SiO 2 by C F8 physisorption followed by Ar plasma

Author

Antoun, G., Lefaucheux, P., Tillocher, T., Dussart, Rémi, Yamazaki, Kumiko, Yatsuda, Koichi, Faguet, Jacques, Maekawa, Kaoru, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), Tokyo Electron (TEL), and TEL Technology Center, America, LLC

Subjects
[SPI.PLASMA]Engineering Sciences [physics]/Plasmas, [SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

23. Study of long lifetime DC microdischarges on silicon elaborated by MEMS fabrication techniques

Author

Michaud, Ronan, Stolz, Arnaud, Iséni, Sylvain, Aubry, Olivier, Lefaucheux, Philippe, Dzikowski, Sebastian, Schulz-Von Der Gathen, Volker, Pitchford, Leanne, Dussart, Rémi, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), Ruhr-Universität Bochum [Bochum], LAboratoire PLasma et Conversion d'Energie (LAPLACE), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), and Université Fédérale Toulouse Midi-Pyrénées

Subjects
[PHYS.PHYS.PHYS-PLASM-PH]Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], [SPI.PLASMA]Engineering Sciences [physics]/Plasmas, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2018

24. CRYOGENIC ETCHING APPLIED TO THE REALIZATION OF HIGH DENSITY CAPACITOR WITH A HOMOPOLYMER MASK

Author

Kulsreshath, Mukesh, Sinturel, Christophe, Lefaucheux, Philippe, Vayer, Marylène, Tillocher, Thomas, Boufnichel, Mohamed, Dussart, Rémi, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), Interfaces, Confinement, Matériaux et Nanostructures ( ICMN), STMicroelectronics [Tours] (ST-TOURS), Tillocher, Thomas, and Dussart, Rémi

Subjects
[PHYS]Physics [physics], [SPI]Engineering Sciences [physics], [SPI] Engineering Sciences [physics], [PHYS.PHYS.PHYS-PLASM-PH]Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], [PHYS.PHYS.PHYS-PLASM-PH] Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], ComputingMilieux_MISCELLANEOUS, [PHYS] Physics [physics]
Abstract

International audience

Published
2017

25. Cryogenic processes for silicon deep etching, low-K materials and atomic layer etching

Author

Dussart, Rémi, Tillocher, Thomas, Lefaucheux, Philippe, Yatsuda, Koichi, Maekawa, Kaoru, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), and Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.PLASMA]Engineering Sciences [physics]/Plasmas, [SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2018

26. Microdischarge integration on silicon based devices

Author

Dussart, Rémi, Dussart, Remi, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), and Centre National de la Recherche Scientifique (CNRS)-Université d'Orléans (UO)

Subjects
[SPI.PLASMA]Engineering Sciences [physics]/Plasmas, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2017

28. Cryogenic Atomic Layer Etching of SiO2

Author

Holtzer, Nicolas, Tillocher, Thomas, Lefaucheux, Philippe, Dussart, Rémi, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), and Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], [SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2017

29. Ignition and operation of microdischarge arrays on silicon wafers

Author

Dussart, Rémi, Michaud, Ronan, Felix, Valentin, Aubry, Olivier, Stolz, Arnaud, Lefaucheux, Philippe, Dzikowski, Sebastian, Schulz-Von Der Gathen, V., Overzet, Lawrence, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), Institute for Applied Plasma Physics, Ruhr-Universität Bochum [Bochum], Plasma Application Laboratory (PAL), and University of Texas at Dallas [Richardson] (UT Dallas)

Subjects
[PHYS]Physics [physics], [SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2017

30. Microhollow cathode discharges on silicon devices

Author

Dussart, Rémi, Michaud, Ronan, Felix, Valentin, Aubry, Olivier, Stolz, Arnaud, Lefaucheux, Philippe, Dzikowski, Sebastian, Schulz-Von Der Gathen, V., Overzet, Lawrence, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), Institute for Applied Plasma Physics, Ruhr-Universität Bochum [Bochum], Plasma Application Laboratory (PAL), and University of Texas at Dallas [Richardson] (UT Dallas)

Subjects
[PHYS]Physics [physics], [SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2017

31. Fabrication and characterization of microdischarge arrays on Silicon

Author

Dussart, Rémi, Michaud, Ronan, Stolz, Arnaud, Aubry, Olivier, Lefaucheux, Philippe, Dzikowski, Sebastian, Schulz-Von Der Gathen, V., Overzet, Lawrence, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), Institute for Applied Plasma Physics, Ruhr-Universität Bochum [Bochum], Plasma Application Laboratory (PAL), and University of Texas at Dallas [Richardson] (UT Dallas)

Subjects
[PHYS]Physics [physics], [SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2017

32. Stability enhancement of DC silicon-based microhollow cathode discharges

Author

Michaud, Ronan, Felix, Valentin, Dzikowski, Sebastian, Stolz, Arnaud, Aubry, Olivier, Lefaucheux, Philippe, Schulz-Von Der Gathen, V., Overzet, Lawrence, Dussart, Rémi, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), Institute for Applied Plasma Physics, Ruhr-Universität Bochum [Bochum], Plasma Application Laboratory (PAL), and University of Texas at Dallas [Richardson] (UT Dallas)

Subjects
[PHYS]Physics [physics], [SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2017

33. Microplasma arrays operating in DC fabricated by microelectronic technologies

Author

Dussart, Rémi, Stolz, Arnaud, Aubry, Olivier, Lefaucheux, Philippe, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), and Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], [SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2016

34. DC microdischarge arrays

Author

Dussart, Rémi, Felix, Valentin, Overzet, Lawrence, Aubry, Olivier, Lefaucheux, Philippe, Golda, Judith, Schulz-Von Der Gathen, V., Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), Plasma Application Laboratory (PAL), University of Texas at Dallas [Richardson] (UT Dallas), Institute for Applied Plasma Physics, and Ruhr-Universität Bochum [Bochum]

Subjects
[PHYS]Physics [physics], [SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2016

35. Cryoetching mechanisms and STiGer process evaluation

Author

Dussart, Rémi, Tillocher, Thomas, Lefaucheux, Philippe, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), and Centre National de la Recherche Scientifique (CNRS)-Université d'Orléans (UO)

Subjects
[PHYS]Physics [physics], [SPI]Engineering Sciences [physics], [PHYS.PHYS.PHYS-PLASM-PH]Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2016

39. A Heat Flux Microsensor for Direct Measurements in Plasma Surface Interactions

Author

Thomann Anne-Lise, Dussart Rémi, Semmar Nadjib, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Centre National de la Recherche Scientifique (CNRS)-Université d'Orléans (UO), Igor Minin, and Dussart, Remi

Subjects
010302 applied physics, Materials science, Energy flux, Plasma, 7. Clean energy, 01 natural sciences, Thermopile, Charged particle, 010305 fluids & plasmas, Heat flux, [PHYS.PHYS.PHYS-PLASM-PH]Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], [PHYS.PHYS.PHYS-PLASM-PH] Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], 0103 physical sciences, Plasma diagnostics, Inductively coupled plasma, Atomic physics, Absorption (electromagnetic radiation), ComputingMilieux_MISCELLANEOUS
Abstract

The energy transfer from a plasma to a surface always plays an important role in low pressure plasma material processing (deposition, etching, surface treatment...) [1, 2]. Three different types of plasma species interact with the surface: charge carriers, neutrals and photons [3]. The energy due to charged particles (mainly ions and electrons) represents a significant contribution, especially when the substrate is biased. The energy coming from neutrals can be divided into different contributions: gas conduction, metastable deexcitation, fast neutrals (sputtered atoms, charge transfer mechanisms,... ) and reactions at the surface (e.g. chemical etching...) In argon, for example, the energy due to neutrals is shared between gas conduction and metastable de-excitation since no reaction occurs at the surface. In reactive plasmas, the energy contribution of chemical reactions between radicals and substrate materials can be very high and has to be considered as well. From the results of conventional plasma diagnostics (knowledge of flux and energy carried by interacting species), it is possible to estimate the maximum energy that can be transferred to a surface through energy balances. But the true energy delivered during plasma/surface interaction is difficult to evaluate. Thus, it might be more accurate to perform direct measurements of the energy influx. Most of the techniques used until now only lead to indirect estimations (eg. time evolution of the substrate temperature) [3]. These methods only gives a posteriori values averaged over several minutes, although for most processes (especially time resolved ones) real time measurement of the energy flux would be of interest. To make direct heat flux measurements in plasma processes, we proposed to use a commercially available heat flux microsensor (HFM) [4]. This HFM is composed of hundreds of integrated micro thermocouples, which form a thin thermopile having a very good time resolution (

Published
2011

41. Silicon deep cryoetching with the STiGer process

Author

Tillocher, Thomas, Girault, Vincent, Gomme, Guillaume, Moro, Franck, Pichon, Laurianne, Ladroue, Julien, Pereira, Jeremy, Lefaucheux, Philippe, Boufnichel, Mohamed, Ranson, Pierre, Dussart, Rémi, Dussart, Remi, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Centre National de la Recherche Scientifique (CNRS)-Université d'Orléans (UO), and STMicroelectronics [Crolles] (ST-CROLLES)

Subjects
stomatognathic diseases, [PHYS.PHYS.PHYS-PLASM-PH]Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], [PHYS.PHYS.PHYS-PLASM-PH] Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph]
Abstract

oral

Published
2010

42. Un capteur de flux d'énergie dans les plasmas

Author

Thomann, Anne Lise, Semmar, Nadjib, Dussart, Rémi, Bedra, Larbi, Mathias, Jacky, Tessier, Yves, Mazouffre, Stéphane, Semmar, Nadjib, MRCT CNRS, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Centre National de la Recherche Scientifique (CNRS)-Université d'Orléans (UO), and Laboratoire d'aérothermique (LA)

Subjects
[SPI.GPROC] Engineering Sciences [physics]/Chemical and Process Engineering, [SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering
Published
2009

43. Direct measurement of energy transfers during deposition of sputtered metal atoms

Author

Bedra, Larbi, Thomann, Anne-Lise, Semmar, Nadjib, Dussart, Rémi, Mathias, Jacky, Semmar, Nadjib, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), and Centre National de la Recherche Scientifique (CNRS)-Université d'Orléans (UO)

Subjects
[SPI.GPROC] Engineering Sciences [physics]/Chemical and Process Engineering, [SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering
Published
2009

44. Direct measurements of the energy transfers in deposition or etching low pressure plasma processes

Author

Thomann, Anne-Lise, Dussart, Rémi, Semmar, Nadjib, Bedra, Larbi, Mathias, Jacky, Tessier, Yves, Pichon, Laurianne, Mazouffre, Stéphane, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Centre National de la Recherche Scientifique (CNRS)-Université d'Orléans (UO), Laboratoire d'aérothermique (LA), and Semmar, Nadjib

Subjects
[SPI.GPROC] Engineering Sciences [physics]/Chemical and Process Engineering, [SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering
Published
2008

45. Micro transfert d'énergie dans un solide mince : effet de la résistance thermique de contact

Author

Bedra, Larbi, Semmar, Nadjib, Thomann, Anne-Lise, Dussart, Rémi, Mathias, Jacky, Tessier, Yves, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Centre National de la Recherche Scientifique (CNRS)-Université d'Orléans (UO), and Semmar, Nadjib

Subjects
[SPI.GPROC] Engineering Sciences [physics]/Chemical and Process Engineering, [SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2008

46. A direct measurement of the energy flux density in plasma surface interaction

Author

Dussart, Rémi, Thomann, Anne-Lise, Semmar, Nadjib, Pichon, Laurianne, Bedra, Larbi, Mathias, Jacky, Tessier, Yves, Lefaucheux, Philippe, Semmar, Nadjib, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), and Centre National de la Recherche Scientifique (CNRS)-Université d'Orléans (UO)

Subjects
[SPI.GPROC] Engineering Sciences [physics]/Chemical and Process Engineering, [SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering
Published
2008

47. Mise au point d'un micro-fluxmètre pour la caractérisation des transferts d'énergie dans un plasma d'argon

Author

Semmar, Nadjib, Thomann, Anne-Lise, Dussart, Rémi, Mathias, Jacky, Semmar, Nadjib, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), and Centre National de la Recherche Scientifique (CNRS)-Université d'Orléans (UO)

Subjects
[SPI.GPROC] Engineering Sciences [physics]/Chemical and Process Engineering, [SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2006

48. Diagnostic des plasma par micro-fluxmètre

Author

Thomann, Anne-Lise, Semmar, Nadjib, Dussart, Rémi, Mathias, Jacky, Semmar, Nadjib, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), and Centre National de la Recherche Scientifique (CNRS)-Université d'Orléans (UO)

Subjects
[SPI.GPROC] Engineering Sciences [physics]/Chemical and Process Engineering, [SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering
Published
2006

49. Concurrent effects of wafer temperature and oxygen fraction on cryogenic silicon etching with SF6/O2 plasmas.

Author

Tinck, Stefan, Tillocher, Thomas, Georgieva, Violeta, Dussart, Rémi, Neyts, Erik, and Bogaerts, Annemie

Subjects
ETCHING, REFLECTOMETRY, ISOTHERMAL processes, THERMAL properties, MONTE Carlo method
Abstract

Cryogenic plasma etching is a promising technique for high-control wafer development with limited plasma induced damage. Cryogenic wafer temperatures effectively reduce surface damage during etching, but the fundamental mechanism is not well understood. In this study, the influences of wafer temperature, gas mixture and substrate bias on the (cryogenic) etch rates of Si with SF6/O2 inductively coupled plasmas are experimentally and computationally investigated. The etch rates are measured in situ with double-point reflectometry and a hybrid computational Monte Carlo - fluid model is applied to calculate plasma properties. This work allows the reader to obtain a better insight in the effects of wafer temperature on the etch rate and to find operating conditions for successful anisotropic (cryo)etching. [ABSTRACT FROM AUTHOR]

Published
2017
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