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134 results on '"Duesberg, G."'

1. Laser-induced graphene on cross-linked sodium alginate

Author

Vićentić, Teodora, Greco, Immacolata, Iorio, Carlo Saverio, Mišković, Vanja, Bajuk-Bogdanović, Danica, Pašti, Igor, Radulović, Katarina, Klenk, S., Stimpel-Lindner, Tanja, Duesberg, G. S., Spasenović, Marko, Vićentić, Teodora, Greco, Immacolata, Iorio, Carlo Saverio, Mišković, Vanja, Bajuk-Bogdanović, Danica, Pašti, Igor, Radulović, Katarina, Klenk, S., Stimpel-Lindner, Tanja, Duesberg, G. S., and Spasenović, Marko

Abstract

Laser-induced graphene (LIG) possesses desirable properties for numerous applications. However, LIG formation on biocompatible substrates is needed to further augment the integration of LIG-based technologies into nanobiotechnology. Here, LIG formation on cross-linked sodium alginate is reported. The LIG is systematically investigated, providing a comprehensive understanding of the physicochemical characteristics of the material. Raman spectroscopy, scanning electron microscopy with energy-dispersive x-ray analysis, x-ray diffraction, transmission electron microscopy, Fourier-transform infrared spectroscopy and x-ray photoelectron spectroscopy techniques confirm the successful generation of oxidized graphene on the surface of cross-linked sodium alginate. The influence of laser parameters and the amount of crosslinker incorporated into the alginate substrate is explored, revealing that lower laser speed, higher resolution, and increased CaCl2 content leads to LIG with lower electrical resistance. These findings could have significant implications for the fabrication of LIG on alginate with tailored conductive properties, but they could also play a guiding role for LIG formation on other biocompatible substrates.

Published
2024

2. Liquid phase production of graphene by exfoliation of graphite in surfactant/water solutions

Author

Hernandez, Y, Lotya, M, Nicolosi, V, Blighe, FM, De, S, Duesberg, G, and Coleman, JN

Subjects
Condensed Matter - Materials Science
Abstract

We have demonstrated a method to disperse and exfoliate graphite to give graphene suspended in water-surfactant solutions. Optical characterisation of these suspensions allowed the partial optimisation of the dispersion process. Transmission electron microscopy showed the dispersed phase to consist of small graphitic flakes. More than 40% of these flakes had <5 layers with ~3% of flakes consisting of monolayers. These flakes are stabilised against reaggregation by Coulomb repulsion due to the adsorbed surfactant. However, the larger flakes tend to sediment out over ~6 weeks, leaving only small flakes dispersed. It is possible to form thin films by vacuum filtration of these dispersions. Raman and IR spectroscopic analysis of these films suggests the flakes to be largely free of defects and oxides. The deposited films are reasonably conductive and are semi-transparent. Further improvements may result in the development of cheap transparent conductors.

Published
2008

3. High yield production of graphene by liquid phase exfoliation of graphite

Author

Hernandez, Y., Nicolosi, V., Lotya, M., Blighe, F., Sun, Z., De, S., McGovern, I. T., Holland, B., Byrne, M., Gunko, Y., Boland, J., Niraj, P., Duesberg, G., Krishnamurti, S., Goodhue, R., Hutchison, J., Scardaci, V., Ferrari, A. C., and Coleman, J. N.

Subjects
Condensed Matter - Materials Science
Abstract

Graphene is at the centre of nanotechnology research. In order to fully exploit its outstanding properties, a mass production method is necessary. Two main routes are possible: large-scale growth or large-scale exfoliation. Here, we demonstrate graphene dispersions with concentrations up to ~0.01 mg/ml by dispersion and exfoliation of graphite in organic solvents such as N-methyl-pyrrolidone. This occurs because the energy required to exfoliate graphene is balanced by the solvent-graphene interaction for solvents whose surface energy matches that of graphene. We confirm the presence of individual graphene sheets with yields of up to 12% by mass, using absorption spectroscopy, transmission electron microscopy and electron diffraction. The absence of defects or oxides is confirmed by X-ray photoelectron, infra-red and Raman spectroscopies. We can produce conductive, semi-transparent films and conductive composites. Solution processing of graphene opens up a whole range of potential large-scale applications from device or sensor fabrication to liquid phase chemistry.

Published
2008
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4. Sub 20 nm Short Channel Carbon Nanotube Transistors

Author

Seidel, R. V., Graham, A. P., Kretz, J., Rajasekharan, B., Duesberg, G. S., Liebau, M., Unger, E., Kreupl, F., and Hoenlein, W.

Subjects
Condensed Matter - Materials Science
Abstract

Carbon nanotube field-effect transistors with sub 20 nm long channels and on/off current ratios of > 1000000 are demonstrated. Individual single-walled carbon nanotubes with diameters ranging from 0.7 nm to 1.1 nm grown from structured catalytic islands using chemical vapor deposition at 700 degree Celsius form the channels. Electron beam lithography and a combination of HSQ, calix[6]arene and PMMA e-beam resists were used to structure the short channels and source and drain regions. The nanotube transistors display on-currents in excess of 15 microA for drain-source biases of only 0.4 Volt., Comment: Nano Letters in press

Published
2004
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5. Carbon Nanotubes in Microelectronic Applications

Author

Kreupl, F., Duesberg, G. S., Graham, A. P., Liebau, M., Unger, E., Seidel, R., Pamler, W., and Hoenlein, W.

Subjects
Condensed Matter - Materials Science
Abstract

Carbon nanotubes with their outstanding electrical and mechanical properties are suggested as interconnect material of the future and as switching devices, which could outperform silicon devices. In this paper we will introduce nanotubes, specify the applications, where nanotubes can contribute to the advancement of Moore's law and show our progress of nanotube process integration in a microelectronic compatible way. The growth of single individual nanotubes at lithographically defined locations on whole wafers as a key requirement for the successful implementation of nanotubes is shown. In terms of nanotube transistors we propose a vertical nanotube transistor concept which outperforms the ITRS requirements for the year 2016. The performance is mainly limited by contact resistances, but by comparison with silicon devices we show that fabricated nanotube transistors already today exceed the values for transconductance, on-resistance and drive current of silicon devices., Comment: published in: Physics, Chemistry and Applications of Nanostructures, Reviews and Short Notes to Nanomeeting 2003, V. E. Borisenko, S. V. Gaponenko, V. S. Gurin (Eds.), World Scientific (2003), pp. 525-532

Published
2004

6. Bias Dependence and Electrical Breakdown of Small Diameter Single-Walled Carbon Nanotubes

Author

Seidel, R. V., Graham, A. P., Rajasekharan, B., Unger, E., Liebau, M., Duesberg, G. S., Kreupl, F., and Hoenlein, W.

Subjects
Condensed Matter - Materials Science
Abstract

The electronic breakdown and the bias dependence of the conductance have been investigated for a large number of catalytic chemical vapor deposition (CCVD) grown single-walled carbon nanotubes (SWCNTs) with very small diameters. The convenient fabrication of thousands of properly contacted SWCNTs was possible by growth on electrode structures and subsequent electroless palladium deposition. Almost all of the measured SWCNTs showed at least weak gate dependence at room temperature. Large differences in the conductance and breakdown behavior have been found for "normal" semiconducting SWCNTs and small band-gap semiconducting (SGS) SWCNTs., Comment: submitted to Journal of Applied Physics

Published
2004
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7. Laser-induced graphene on cross-linked sodium alginate.

Author

Vićentić, T, Greco, I, Iorio, C S, Mišković, V, Bajuk-Bogdanović, D, Pašti, I A, Radulović, K, Klenk, S, Stimpel-Lindner, T, Duesberg, G S, and Spasenović, M

Subjects
GRAPHENE, X-ray photoelectron spectroscopy, PHOTOELECTRON spectroscopy, SODIUM alginate, TRANSMISSION electron microscopy, INFRARED spectroscopy, RAMAN spectroscopy, ALGINATES
Abstract

Laser-induced graphene (LIG) possesses desirable properties for numerous applications. However, LIG formation on biocompatible substrates is needed to further augment the integration of LIG-based technologies into nanobiotechnology. Here, LIG formation on cross-linked sodium alginate is reported. The LIG is systematically investigated, providing a comprehensive understanding of the physicochemical characteristics of the material. Raman spectroscopy, scanning electron microscopy with energy-dispersive x-ray analysis, x-ray diffraction, transmission electron microscopy, Fourier-transform infrared spectroscopy and x-ray photoelectron spectroscopy techniques confirm the successful generation of oxidized graphene on the surface of cross-linked sodium alginate. The influence of laser parameters and the amount of crosslinker incorporated into the alginate substrate is explored, revealing that lower laser speed, higher resolution, and increased CaCl2 content leads to LIG with lower electrical resistance. These findings could have significant implications for the fabrication of LIG on alginate with tailored conductive properties, but they could also play a guiding role for LIG formation on other biocompatible substrates. [ABSTRACT FROM AUTHOR]

Published
2024
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9. Stacking polymorphism in PtSe2 drastically affects its electromechanical properties

Author

Kempt, R., Lukas, S., Hartwig, O., Prechtl, M., (0000-0002-9458-4136) Kuc, A. B., Brumme, T., Li, S., Neumaier, D., Lemme, M. C., Duesberg, G. S., (0000-0003-2379-6251) Heine, T., Kempt, R., Lukas, S., Hartwig, O., Prechtl, M., (0000-0002-9458-4136) Kuc, A. B., Brumme, T., Li, S., Neumaier, D., Lemme, M. C., Duesberg, G. S., and (0000-0003-2379-6251) Heine, T.

Abstract

PtSe2 is one of the most promising materials for the next generation of piezoresistive sensors. However, the large-scale synthesis of homogeneous thin films with reproducible electromechanical properties is challenging due to polycrystallinity. We show that stacking phases other than the 1T phase become thermodynamically available at elevated temperatures that are common during synthesis. We show that these phases can make up a significant fraction in a polycrystalline thin film and discuss methods to characterize them, including their Seebeck coefficients. Lastly, we estimate their gauge factors, which vary strongly and heavily impact the performance of a nanoelectromechanical device.

Published
2022

10. Correction: G. Papari et al. Terahertz spectroscopy of amorphous wse2 and mose2 thin films. Materials (2018), 11(9), 1613[Materials 2020, 13, 1017] DOI: 10.3390/ma13041017

Author

Papari G. P., Koral C., Hallam T., Duesberg G. S., Andreone A., Papari, G. P., Koral, C., Hallam, T., Duesberg, G. S., and Andreone, A.

Abstract

The exponential factor in Equation (1) of the paper published in Materials [1] reports a misprint and the correct expression of the transmission function is These changes have no material impact on the conclusions of the paper. The authors would like to apologize for any inconvenience caused to the readers by these changes. Conflicts of Interest: The authors declare no conflict of interest.

Published
2020

11. Stacking of Two-Dimensional Materials to Large-Area Heterostructures by Wafer Bonding

Author

Quellmalz, Arne, Sawallich, S., Prechtl, M., Hartwig, O., Luo, S., Wagner, S., Duesberg, G. S., Lemme, M. C., Niklaus, Frank, Gylfason, Kristinn, Quellmalz, Arne, Sawallich, S., Prechtl, M., Hartwig, O., Luo, S., Wagner, S., Duesberg, G. S., Lemme, M. C., Niklaus, Frank, and Gylfason, Kristinn

Abstract

The integration of 2D materials for photonic applications is not compatible with high-volume manufacturing. We report a generic methodology that uses only readily available semiconductor equipment and experimentally demonstrate the stacking of graphene and molybdenum disulfide (MoS2)., Part of proceedings: ISBN 978-1-943580-91-0Not duplicate with DiVA 1665889QC 20230206

Published
2021

12. Waveguide-Integrated Photodetectors based on 2D Platinum Diselenide

Author

Parhizkar, S., Prechtl, M., Giesecke, A. L., Suckow, S., Lukas, S., Hartwig, O., Quellmalz, Arne, Gylfason, Kristinn, Schall, D., Duesberg, G. S., Lemme, M. C., Parhizkar, S., Prechtl, M., Giesecke, A. L., Suckow, S., Lukas, S., Hartwig, O., Quellmalz, Arne, Gylfason, Kristinn, Schall, D., Duesberg, G. S., and Lemme, M. C.

Abstract

QC 20220810Part of book: ISBN 978-166541240-7

Published
2021
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13. Perforating Freestanding Molybdenum Disulfide Monolayers with Highly Charged Ions

Author

Kozubek, R., Tripathi, M., (0000-0003-3060-4369) Ghorbani-Asl, M., Kretschmer, S., Madauß, L., Pollmann, E., O'Brien, M., Mcevoy, N., Ludacka, U., Susi, T., Duesberg, G. S., Wilhelm, R. A., (0000-0003-0074-7588) Krasheninnikov, A. V., Kotakoski, J., Schleberger, M. Y., Kozubek, R., Tripathi, M., (0000-0003-3060-4369) Ghorbani-Asl, M., Kretschmer, S., Madauß, L., Pollmann, E., O'Brien, M., Mcevoy, N., Ludacka, U., Susi, T., Duesberg, G. S., Wilhelm, R. A., (0000-0003-0074-7588) Krasheninnikov, A. V., Kotakoski, J., and Schleberger, M. Y.

Abstract

Porous single-layer molybdenum disulfide (MoS2) is a promising material for applications such as DNA sequencing and water desalination. In this work, we introduce irradiation with highly charged ions (HCIs) as a new technique to fabricate well-defined pores in MoS2. Surprisingly, we find a linear increase of the pore creation efficiency over a broad range of potential energies. Comparison to atomistic simulations reveals the critical role of energy deposition from the ion to the material through electronic excitation in the defect creation process, and suggests an enrichment in molybdenum in the vicinity of the pore edges at least for ions with low potential energies. Analysis of the irradiated samples with atomic resolution scanning transmission electron microscopy reveals a clear dependence of the pore size on the potential energy of the projectiles, establishing irradiation with highly charged ions as an effective method to create pores with narrow size distributions and radii between ca. 0.3 and 3 nm.

Published
2019

15. Highly Sensitive Electromechanical Piezoresistive Pressure Sensors Based on Large-Area Layered PtSe2 Films

Author

Wagner, S., Yim, C., Mcevoy, N., Kataria, S., Yokaribas, V., (0000-0002-9458-4136) Kuc, A. B., Pindl, S., Fritzen, C.-P., (0000-0003-2379-6251) Heine, T., Duesberg, G. S., Lemme, M. C., Wagner, S., Yim, C., Mcevoy, N., Kataria, S., Yokaribas, V., (0000-0002-9458-4136) Kuc, A. B., Pindl, S., Fritzen, C.-P., (0000-0003-2379-6251) Heine, T., Duesberg, G. S., and Lemme, M. C.

Abstract

Two-dimensional (2D) layered materials are ideal for micro- and nanoelectromechanical systems (MEMS/NEMS) due to their ultimate thinness. Platinum diselenide (PtSe2), an exciting and unexplored 2D transition metal dichalcogenide material, is particularly interesting because its low temperature growth process is scalable and compatible with silicon technology. Here, we report the potential of thin PtSe2 films as electromechanical piezoresistive sensors. All experiments have been conducted with semimetallic PtSe2 films grown by thermally assisted conversion of platinum at a complementary metal−oxide−semiconductor (CMOS)-compatible temperature of 400 °C. We report high negative gauge factors of up to −85 obtained experimentally from PtSe2 strain gauges in a bending cantilever beam setup. Integrated NEMS piezoresistive pressure sensors with freestanding PMMA/PtSe2 membranes confirm the negative gauge factor and exhibit very high sensitivity, outperforming previously reported values by orders of magnitude. We employ density functional theory calculations to understand the origin of the measured negative gauge factor. Our results suggest PtSe2 as a very promising candidate for future NEMS applications, including integration into CMOS production lines.

Published
2018

16. An investigation of the electrical properties of pyrolytic carbon in reduced dimensions: Vias and wires.

Author

Graham, A. P., Schindler, G., Duesberg, G. S., Lutz, T., and Weber, W.

Subjects
WIRE, CHEMICAL vapor deposition, LIGHT elements, ACETYLENE, PHYSICS
Abstract

Nanoscale vertical interconnect structures (vias) made from chemical vapor deposited carbon have been investigated. The vias and wires were created by pyrolytic carbon deposition from acetylene at 950 °C followed by electron beam lithography and reactive ion etching. The carbon layer exhibits a resistivity of 4.5 mΩ cm in vias and wires which decreases to 1.5 mΩ cm after annealing at 1000 °C. The resistivity does not show any size effect in the vias, as it is independent of the diameter from 85 nm down to 24 nm. The maximum current density in long carbon wires was found to be 6×106 A cm-2, increasing to 3.5×108 A cm-2 for short vias. [ABSTRACT FROM AUTHOR]

Published
2010
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21. Robust fabrication of suspended structures from CVD graphene (Oral Plenary)

Author

Aydin, O. Isil, T., Hallam, J.L., Thomassin, Piot, B.A., Duesberg, G. S., Mouis, Mireille, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), CRANN, Trinity College Dublin, Laboratoire de Transport Electronique Quantique et Supraconductivité (LaTEQS), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire national des champs magnétiques intenses - Grenoble (LNCMI-G), Université Joseph Fourier - Grenoble 1 (UJF)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS), Renatech, ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées, Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)

Subjects
stomatognathic diseases, health care facilities, manpower, and services, education, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, health care economics and organizations
Abstract

Oral plenary; International audience

Published
2015

22. A study of the residual strain in suspended CVD graphene devices made by a robust fabrication route

Author

Aydin, O.I., Hallam, T., Thomassin, J.L., Duesberg, G. S., Mouis, Mireille, Ducroquet, Frédérique, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), CRANN, Trinity College Dublin, Laboratoire de Transport Electronique Quantique et Supraconductivité (LaTEQS), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), M. Mouis, O. Thomas, E. Zschech, C. Paitel, and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

session: 2D Materials; International audience

Published
2015

23. Investigation of strain induced effects in supported and suspended CVD graphene

Author

Aydin, O. Isil, Hallam, T., Mouis, M., Cresti, Alessandro, Piot, B. A., Thomassin, J., Duesberg, G., Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), CRANN, Trinity College Dublin, Laboratoire national des champs magnétiques intenses - Grenoble (LNCMI-G), Université Joseph Fourier - Grenoble 1 (UJF)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Transport Electronique Quantique et Supraconductivité (LaTEQS), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Bruckert, Laboratoire de Recherche en Nanosciences (LRN), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées, and Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

National audience

Published
2014

24. Robust fabrication of suspended graphene structures

Author

Aydin, O. Isil, Cresti, Alessandro, T., Hallam, J.L., Thomassin, Mouis, Mireille, Duesberg, G. S., Cresti, Alessandro, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), CRANN, Trinity College Dublin, Laboratoire de Transport Electronique Quantique et Supraconductivité (LaTEQS), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Fondation Nanosciences, and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMethodologies_GENERAL, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

poster; National audience

Published
2014

25. Long-chain amine-templated synthesis of gallium sulfide and gallium selenide nanotubes

Author

Seral-Ascaso, A., primary, Metel, S., additional, Pokle, A., additional, Backes, C., additional, Zhang, C. J., additional, Nerl, H. C., additional, Rode, K., additional, Berner, N. C., additional, Downing, C., additional, McEvoy, N., additional, Muñoz, E., additional, Harvey, A., additional, Gholamvand, Z., additional, Duesberg, G. S., additional, Coleman, J. N., additional, and Nicolosi, V., additional

Published
2016
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26. Doped Carbon Nanotubes for Interconnects

Author

Robertson, J., primary, Esconjauregui, S., additional, D'Arsie, L., additional, Yang, J., additional, Sugime, H., additional, Zhong, G., additional, Vollebregt, S., additional, Ishihara, R., additional, Cepek, C., additional, Duesberg, G., additional, Hallam, T., additional, and Guo, Y., additional

Published
2015
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32. [Untitled]

Author

Duesberg, G. S. and Byrne, Hugh

Subjects
Condensed Matter::Materials Science, Physics::Medical Physics, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Abstract

Individual single-wall carbon nanotubes (SWNT) or small ropes of SWNTs with the same diameter have been characterised by Raman spectroscopy. Highly pure, length-selected SWNTs adsorbed onto substrates designed for surface-enhanced Raman spectroscopy were investigated with a Raman microscope. Various spectra, each with a distinct sharp peak in the radial breathing mode area and four C–C stretching modes could be observed. The modes also showed a strong variation in the relative intensities. In correlation with theoretical predictions this should establish Raman microscopy as a non-destructive nano-technological tool, capable of determining the diameter, symmetry and position of individual SWNTs.

Published
1999
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33. Experimental Observation of Individual Single Wall Nanotube Species by Raman Microscopy

Author

Duesberg, G. S., Blau, W., Byrne, Hugh, Muster, J., Burghard, M., and Roth, S.

Subjects
Condensed Matter::Materials Science, single wall nanotube, Physics, Physics::Medical Physics, species, individual, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, raman microscopy
Abstract

Individual single-wall carbon nanotubes (SWNT) or small ropes of SWNTs with the same diameter have been characterised by Raman spectroscopy. Highly pure, length-selected SWNTs adsorbed onto substrates designed for surface-enhanced Raman spectroscopy were investigated with a Raman microscope. Various spectra, each with a distinct sharp peak in the radial breathing mode area and four C–C stretching modes could be observed. The modes also showed a strong variation in the relative intensities. In correlation with theoretical predictions this should establish Raman microscopy as a non-destructive nano-technological tool, capable of determining the diameter, symmetry and position of individual SWNTs.

Published
1999

34. Low temperature graphene growth

Author

Kumar, Shailesh, McEvoy, N, Lutz, T., Keeley, G., Whiteside, Nicholas, Blau, Werner, Duesberg, G., Kumar, Shailesh, McEvoy, N, Lutz, T., Keeley, G., Whiteside, Nicholas, Blau, Werner, and Duesberg, G.

Abstract

We demonstrate the growth of graphene films on nickel substrates by chemical vapour deposition using acetylene at temperatures as low as 750 degrees celsius, opening a viable route for its scalable production. Raman spectroscopy was used to confirm defect-free mono and multilayer graphene at and above this temperature, and of defective graphene at lower temperatures. Atomic force microscopy and scanning electron microscopy performed directly on the films give an indication of graphene flake size, morphology and also the topography on substrate. An unexpected dependence of graphene thickness on precursor dwell time is reported. This together with low temperature growth suggests deficiencies in existing growth models and hints at a more complicated growth mechanism.

Published
2009

41. Non-Linear Gate Length Dependence of On-Current in Si-Nanowire FETs

Author

Weber, W. M., primary, Graham, A. P., additional, Duesberg, G. S., additional, Liebau, M., additional, Cheze, C., additional, Geelhaar, L., additional, Unger, E., additional, Pamler, W., additional, Hoenlein, W., additional, Riechert, H., additional, Kreupl, F., additional, and Lugli, P., additional

Published
2006
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44. Sub-20 nm Short Channel Carbon Nanotube Transistors

Author

Seidel, R. V., primary, Graham, A. P., additional, Kretz, J., additional, Rajasekharan, B., additional, Duesberg, G. S., additional, Liebau, M., additional, Unger, E., additional, Kreupl, F., additional, and Hoenlein, W., additional

Published
2004
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48. Towards the integration of carbon nanotubes in microelectronics.

Author

Graham, A. P., Duesberg, G. S., Kreupl, F., Seidel, R., Liebau, M., Unger, E., and Hönlein, W.

Subjects
*NANOTUBES, *CARBON, *MICROELECTRONICS, *INTEGRATED circuit interconnections
Abstract

The outstanding properties of carbon nanotubes (CNTs) makes them particularly interesting for microelectronic applications such as interconnects and devices. The parallel integration of CNTs using compatible processes is critical for their future application and implies the simultaneous processing of millions of CNTs. In this paper, we present concepts for CNT-based interconnects for large-scale integration. In order to realize this we demonstrate the creation of vertical interconnects (vias) consisting of multi-walled nanotubes and show, for the first time, the growth of single, isolated CNTs at lithographically defined locations. © 2003 American Institute of Physics [ABSTRACT FROM AUTHOR]

Published
2003
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49. Controlled CVD-growth of multiwalled CNTs.

Author

Duesberg, G. S., Kreupl, F., Graham, A., Liebau, M., Unger, E., Gabric, Z., and Hönlein, W.

Subjects
*NANOTUBES, *CHEMICAL vapor deposition
Abstract

Many applications of carbon nanotubes (CNTs) require a material with defined properties, however most synthesis routes yield CNTs of varying purity, structure, diameter, and length. Chemical vapor deposition (CVD) allows a good control over the CNTs synthesis and leads to promising results, however the effect of many parameters remains unclear. In order to improve this situation a comprehensive study was carried out under highly controlled conditions. The used CVD reactor was capable to perform deposition processes with temperature deviations smaller than 1°K. The substrates were patterned Fe films with a thickness below 10 nm on silicon/siliconoxide. The effects of the conditioning of the catalyst prior to growth, growth temperature, and growth time were investigated. The synthesis in a hydrogen/acetylene atmosphere yielded pure multi-walled CNTs with diameters between 10-20 nm. The length of the CNTs was accurately controlled by the growth time. The density of the CNTs can be varied by the preconditioning of the catalyst. The controlled synthesis allows an integration of CNTs into technologically relevant structures for microelectronics and elucidates the mechanism of the catalysed CNT growth. [ABSTRACT FROM AUTHOR]

Published
2002

50. Towards Carbon Nanotube In-plane Transistors.

Author

Chiu, P. W., Duesberg, G. S., Dettlaff-Weglikowska, U., and Roth, S.

Subjects
*NANOTUBES, *TRANSISTORS
Abstract

Intermolecular carbon nanotube junctions were formed by coupling chemically functionalized nanotubes with molecular linkers. A T-shape heterojunction can be formed by reacting chloride terminated nanotubes with aliphatic diamine. Electronic devices were prepared by adsorption of functionalized nanotube junctions on Si/SiO[SUB2] substrate followed by standard e-beam lithography. The charge transport through the junction was fund to be strongly modified by the in-plane nanotube mechanically, leading to pronounced metal-insulator transition. [ABSTRACT FROM AUTHOR]

Published
2002

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