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29 results on '"Dubecký, František"'

1. The Work Functions of Au/Mg Decorated Au(100), Mg(001), and AuMg Alloy Surfaces: A Theoretical Study

Author

Dubecký, Matúš and Dubecký, František

Subjects
Condensed Matter - Materials Science
Abstract

A plane-wave density functional theory is used to predict the work functions of Au/Mg decorated Au(100), Mg(001), and stochiometric AuMg alloy surfaces. We find, that irrespective of the details, all Au/Mg systems containing Mg on the surface reveal the Mg-dominated work functions, i.e. significantly shifted toward the work function of clean Mg(001) surface. The reported analyzes suggest, that this general trend stems from a strong charge transfer from Mg to Au and consequent enhancement of a surface dipole. The calculated properties of the AuMg alloy well agree to the experiment. The reported results may readily find application in Au/Mg/AuMg surface physics and technology of metal/semiconductor contacts.

Published
2014
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19. The Study of 4H-SiC Alpha Particle Detectors with Different Schottky Contact Metallization.

Author

Zaťko, Bohumír, Dubecký, František, Ryć, Leszek, Šagátová, Andrea, Sedlačková, Katarína, Kováčová, Eva, and Nečas, Vladimír

Subjects
*ALPHA rays, *RADIOISOTOPES, *NUCLEAR physics, *ELECTRIC conductivity, *DETECTORS
Abstract

We fabricated and characterized 4H-SiC Schottky diodes as a spectrometric detector of alpha particles. Two types of blocking contacts based on Ni/Au and Pt/Au were used. The total thickness of prepared blocking contacts was about 15 nm to minimize the influence on alpha particles energy resolution. Current-voltage characteristics of two types of detectors were measured at room temperature and compared. As a source of alpha particles we utilized triple radioisotope of 239Pu 241Am 244Cm. Detected alpha particles had energies from 5.1 MeV up to 5.8 MeV. The spectrometric performance of detectors with two types of blocking contacts were evaluated and compared. [ABSTRACT FROM AUTHOR]

Published
2018
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20. Comment on 'Simulation of Schottky and Ohmic contacts on CdTe'

Author

Dubecký, František, Dubecký, Matúš, and School of Materials Science & Engineering

Subjects
Engineering::Materials::Microelectronics and semiconductor materials [DRNTU]
Abstract

In the present comment, it is argued why the model assumed in [J. Appl. Phys. 109, 014509 (2011)] is inappropriate for the modeling of realistic detector grade semi-insulating CdTe devices. Amendments to the model to account for more realistic physics in devices based on semi-insulating materials are briefly pointed out. Published version

Published
2012

22. 4H-SiC and novel SI GaAs-based M-S-M radiation hard photodetectors applicable in UV, EUV, and soft x-ray detection: design, technology, and performance testing

Author

Dubecký, František, primary, Kováč, Jaroslav, additional, Zaťko, Bohumír, additional, Oswald, Jirí, additional, Hubík, Pavel, additional, Kindl, Dobroslav, additional, Vanko, Gabriel, additional, Gombia, Enos, additional, Ferrari, Claudio, additional, Boháček, Pavol, additional, Šagátová, Andrea, additional, Nečas, Vladimír, additional, and Sekáčová, Mária, additional

Published
2013
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27. Performance study of radiation detectors based on semi-insulating GaAs with P+ homo- and heterojunction blocking electrode

Author

Dubecký, František, Hulicius, Eduard, Frigeri, Paola, Perd’ochová-Šagátová, Andrea, Zat’ko, Bohumír, b, Pavel, Gombia, Enos, Boháček, Pavel, Pangrác, Jiří, Franchi, Secondo, and Nečas, Vladimír

Subjects
*PHYSICS instruments, *DETECTORS, *RADIATION, *ELECTRIC resistors
Abstract

Abstract: A preliminary study of technology and performance of radiation detectors based on bulk semi-insulating (SI) GaAs with P+ blocking electrodes is presented. Detectors with blocking electrode system formed either by P+(GaAs)/N–(SI GaAs) homojunction or P+(Al0.3Ga0.7As)/N–(SI GaAs) heterojunction are prepared. Room-temperature I–V characteristics, measurement and evaluation of pulse–height spectra using 241Am and 57Co radionuclide sources were performed for the characterization of the fabricated detectors. The aim of the study is to verify the possibility to improve the performances of SI GaAs radiation detectors based on the Schottky contact by using the more sophisticated P+–N junction technology. The obtained results and the possibility of future improvements of SI GaAs radiation detectors to be used in digital X-ray imaging are discussed. [Copyright &y& Elsevier]

Published
2006
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28. 4H-SiC and novel SI GaAs-based M-S-M radiation hard photodetectors applicable in UV, EUV, and soft x-ray detection: design, technology, and performance testing

Author

Juha, Libor, Bajt, Saša, London, Richard, Hudec, René, Pina, Ladislav, Dubecký, František, Kováč, Jaroslav, Kováč, Jaroslav, Zaťko, Bohumír, Oswald, Jirí, Hubík, Pavel, Kindl, Dobroslav, Vanko, Gabriel, Gombia, Enos, Ferrari, Claudio, Boháček, Pavol, Šagátová, Andrea, Nečas, Vladimír, and Sekáčová, Mária

Published
2013
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29. Photo-Hall effect spectroscopy and laser-induced transient currents in CdTe-based semiconductor radiation detectors

Author

Musiienko, Artem, Grill, Roman, Dubecký, František, and Oswald, Jiří

Subjects
deep levels, insulators, radiation detectors, semiconductors, CdMnTe, Shockley-Read-Hall model simulations, CdTe, photo-Hall effect spectroscopy, transient-current-technique, CdZnTe
Abstract

Title: Photo-Hall effect spectroscopy and laser-induced transient currents in CdTe-based semiconductor radiation detectors Author: Artem Musiienko Department / Institute: Institute of Physics, Faculty of Mathematics and Physics, Charles University Supervisor of the doctoral thesis: Prof. RNDr. Roman Grill, CSc, Institute of Physics, Faculty of Mathematics and Physics, Charles University Abstract: Cadmium Telluride, Cadmium Zinc Telluride, and Cadmium Manganese Telluride are important semiconductors with applications in radiation detection, solar cells, and electro-optic modulators. Their electrical and optical properties are principally controlled by defects forming energy levels within the bandgap. Such defects create recombination and trapping centers capturing photo- created carriers and depreciating the performance of the detector. Simultaneously, the changed occupancy of levels leads to the charging of detector's bulk, which results in the screening of applied bias and the loss of detector's sensitivity. Detailed knowledge of crystal defect structure is thus necessary for the predictable detector work and also for the possibility to reduce the structural defects concentration. This thesis reports on the investigation of deep energy levels in CdTe-based high resistivity and detector-grade materials by...

Published
2018

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