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Dielectric properties of Ba0.7Sr0.3TiO3 (BST) thin films, which were prepared on silicon-based substrates by ion beam sputtering and postdeposition annealing method, were systematically investigated in different electrode configurations of metal-insulator-metal and coplanar interdigital capacitors. It was found that a large dielectric anisotropy exists in the films with better in-plane dielectric properties (higher dielectric permittivity and tunability) than those along the out-of-plane direction. The observed anisotropic dielectric responses are explained qualitatively in terms of a thermal strain effect that is related to dissimilar film strains along the in-plane and out-of-plane directions. Another reason for the dielectric anisotropy is due to different influences of the interfacial low-dielectric layer between the BST film and the substrate (metal electrode). [ABSTRACT FROM AUTHOR]

Ba0.7Sr0.3TiO3 (BST) thick films with thickness up to 1 μm were deposited on Pt-coated silicon substrates by ion beam sputtering, followed by an annealing treatment. It is demonstrated that pure well-crystallized perovskite phase could be obtained in thick BST films by a low temperature process (535 °C). The BST thick films show highly tunable dielectric properties with tunability (at 800 kV/cm) up to 51.0% and 66.2%, respectively, for the 0.5 and 1 μm thick films. The relationship between strains and dielectric properties was systematically investigated in the thick films. The results suggest that a comparatively larger tensile thermal in-plane strain (0.15%) leads to the degradation in dielectric properties of the 0.5 μm thick film; besides, strong defect-related inhomogeneous strains (∼0.3%) make the dielectric peaks smearing and broadening in the thick films, which, however, preferably results in high figure-of-merit factors over a wide operating temperature range. Moreover, the leakage current behavior in the BST thick films was found to be dominated by the space-charge-limited-current mechanism, irrespective of the film thickness. [ABSTRACT FROM AUTHOR]

Dielectric properties of [Ba.sub.0.7][Sr.sub.0.3]Ti[O.sub.3] (BST) thin films, which are prepared on silicon-based substrates by ion beam sputtering and postdeposition annealing method, are examined in different electrode configurations of metal-insulator-metal and coplanar interdigital capacitors. The anisotropic dielectric responses are explained in terms of a thermal strain effect that is related to dissimilar film strains along the in-plane and out-of-plane directions.

[Ba.sub.0.7][Sr.sub.0.3]Ti[O.sub.3] (BST) thick films are deposited on Pt-coated silicon substrates by ion beam sputtering, followed by an annealing treatment. The leakage current behavior in the BST thick films is shown to be dominated by the space-charge-limited-current mechanism, irrespective of the film thickness.

Future integration of metal-insulator-metal capacitors requires devices with high capacitance density and low quadratic voltage coefficient of capacitance (α). A major problem is that the increase in capacitance density is usually accompanied by increased voltage nonlinearities. By combining two high-k materials with opposite α, it is demonstrated that it is possible to obtain capacitors with both high capacitance density and minimal nonlinearity. A SrTiO3/ZrO2 bilayer was used to elaborate capacitors displaying a voltage coefficient of -60 ppm/V2 associated with a density of 11.5 fF/μm2. These devices constitute excellent candidates for the next generation of metal-insulator-metal capacitors. [ABSTRACT FROM AUTHOR]

Abstract: Ba0.7Sr0.3TiO3 (BST) thin films 500nm in thickness were prepared on technologically desirable Pt/TiO2/SiO2/Si(100) substrates by ion beam sputtering (IBS) and post-deposition annealing method. The effect of annealing temperature on the structural and dielectric properties of BST thin films was systematically investigated. A sharp transition in their tunable dielectric behaviours was observed in good agreement with the evolution of crystal structure from amorphous to crystalline phase. It was demonstrated that the perovskite phase could crystallize in BST films at a very low temperature, around 450°C. The lowering of perovskite crystallization temperature in the BST films was explained in terms of the high energetic process nature of IBS technique. A high dielectric tunability of 42% at E (electric field intensity)=500kV/cm and a low loss tangent of 0.013 at zero bias were both obtained in the 450°C-annealed film, thereby resulting in the highest figure-of-merit factor among all the different temperature annealed films. Moreover, the 450°C-annealed film showed superior leakage current characteristics with a low leakage current density of about 10−4 A/cm2 at E =800kV/cm. [Copyright &y& Elsevier]

Transparent electrochemical energy storage devices have attracted extensive attention for the power supply of next-generation transparent electronics. In this paper, semitransparent thin film batteries (TFBs) with a grid-structured design have been fabricated on glass substrates using specific photolithography and etching processes to achieve LiCoO 2 /LiPON/Si structures below human eye resolution. UV-vis transmittances up to 60% have been measured for the obtained TFBs. A discharge capacity as high as 0.15 mAh has been recorded upon galvanostatic cycling at the C/2 rate within 4.2-3 V voltage range for the highest transmittances. The capacity variation trend exhibits an initial phase of a gradual decrease with an average capacity loss of 0.15% per cycle and thereafter a second phase with almost stable capacity. Particular attention has been given to the effects of architecture parameters on the TFB optical and electrochemical properties. To the best of our knowledge, this work is the first demonstration of transparent, all inorganic, thin film lithium ion batteries. While reported studies are limited to battery structures involving liquid or polymer materials, our devices will contribute to improve form factor freedom, extend operating ranges, enhance long-term stability, and will be relevant to the integration into various optoelectronic devices.