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Due to its powerful brain‐like parallel computing and efficient data processing capabilities, memristors are considered to be the core components for building the next generation of artificial intelligence systems. In this study, the CeOx/WOy heterojunction is employed as the functional layer, and various metal materials are utilized as the top electrode to fabricate the memristor. The results indicate that the memristive performance of the Ag/CeOx/WOy/ITO device can be improved by using Ag as the top electrode. By studying the conductivity mechanism of the device, a conductivity model is established that regulates oxygen vacancies and Ag conductive filaments. Furthermore, using the as‐prepared memristor, it is constructed four basic digital logic circuits: OR, AND, XOR, and XNOR, as well as a half adder and a full adder that can be used for digital arithmetic operations. Specifically, an odd/even checker is developed based on XOR and XNOR logic circuits to verify the correctness of data transmission. Finally, it is also designed and implemented a cryptographic array based on a memristor, which can be applied to encrypt and decrypt a series of numbers and images. Therefore, this work extends the application of memristor toward digital circuits, information transmission, data processing and image security encryption. [ABSTRACT FROM AUTHOR]

Memristors, as a novel type of electronic device with memory resistance characteristics, are attracting considerable interest in the field of biomedical applications. In the realm of biosensors and diagnostic technologies, memristors can interact with biomolecules, detecting and analyzing disease biomarkers, thus enabling highly sensitive early cancer detection and rapid virus diagnosis. Additionally, in the domain of neuromorphic computing and brain–machine interfaces, memristors' ability to emulate biological neuron behavior opens up new possibilities for neuromorphic computing systems and neural-controlled prosthetics. Moreover, memristors are also applicable in simulating biological neurons and researching brain disorders, aiding the comprehension of complex brain functions and neurological diseases, and exploring novel treatment methods. This paper provides an overview of the basic principles of memristors, summarizes the latest achievements and advancements in biomaterial-based memristors, and discusses the challenges and prospects of employing biomaterial-based memristors in the biomedical field. Therefore, biomemristors hold tremendous potential for applications in biomedical research and therapy, offering new prospects for medical research and treatment. [ABSTRACT FROM AUTHOR]

By molecular design, a new ion surface-imprintingtechnique was set up based on surface-initiated graft-polymerization,and arsenate anion surface-imprinted material with high performancewas prepared for the first time. A redox initiating system was constitutedby the amino groups on the surface-modified silica gel particles andthe ammonium persulphate in the solution. The cationic monomer 2-methacryloyloxyethyl-trimethylammonium chloride (DMC) was used as functional monomer and N,N′-methylenebisacrylamide (MBA)was used as cross-linker. In the solution, the monomer molecules werearranged around the template ion, arsenate anion, via ion exchangeaction, and then the arsenate anion surface-imprinting was carriedout along with the surface-initiated graft-polymerization of DMC andMBA, forming arsenate anion surface-imprinted material IIP-PDMC/SiO2. The experimental results show IIP-PDMC/SiO2possessesspecific recognition selectivity and excellent binding affinity forarsenate anion. The selectivity coefficients of IIP-PDMC/SiO2for arsenate anion are 8.814 and 7.898 relative to chromate andnitrate ions, respectively. [ABSTRACT FROM AUTHOR]