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1. Exploring the Potential of Integrated Optical Sensing and Communication (IOSAC) Systems with Si Waveguides for Future Networks

2. A Study of Selectively Digital Etching Silicon-Germanium with Nitric and Hydrofluoric Acids

3. Stacked Si Nanosheets Gate-All-Around Transistors with Silicon-on-Nothing Structure for Suppressing Parasitic Effects and Improving Circuits’ Performance

5. Integrated Optical Sensing and Communication (IOSAC) System Based on Hybrid‐Waveguide Structures (Adv. Mater. Technol. 3/2024)

9. Interface Investigation on SiGe/Si Multilayer Structures: Influence of Different Epitaxial Process Conditions

10. Demonstration of Germanium Vertical Gate-All-Around Field-Effect Transistors Featured by Self-Aligned High-κ Metal Gates with Record High Performance

12. High-Quality Recrystallization of Amorphous Silicon on Si (100) Induced via Laser Annealing at the Nanoscale

13. Insight into over Repair of Hot Carrier Degradation by GIDL Current in Si p-FinFETs Using Ultra-Fast Measurement Technique

17. Investigation on Recrystallization Channel for Vertical C-Shaped-Channel Nanosheet FETs by Laser Annealing.

18. Advanced process and electron device technology

21. Recovery Behavior of Interface Traps After Negative Bias Temperature Instability Stress in p-FinFETs Featuring Fast Trap Characterization Technique

23. Investigation on Ge0.8Si0.2-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice

24. A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs

25. A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm

29. Selective Digital Etching of Silicon–Germanium Using Nitric and Hydrofluoric Acids

30. Strained Si0.2Ge0.8/Ge multilayer Stacks Epitaxially Grown on a Low-/High-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium

32. Impact of Ge pre-amorphization implantation on Co/Co-Ti/n+-Si contacts in advanced Co interconnects

33. Investigation of Barrier Property of Amorphous Co–Ti Layer as Single Barrier/Liner in Local Co Interconnects

34. Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors

35. An Investigation of Field Reduction Effect on NBTI Parameter Characterization and Lifetime Prediction Using a Constant Field Stress Method

36. A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm

37. Investigation on the formation technique of SiGe Fin for the high mobility channel FinFET device

40. Comparison of NBTI kinetics in RMG Si p-FinFETs featuring Atomic Layer Deposition Tungsten (ALD W) Filling Metal Using B2H6 and SiH4 Precursors

42. Impact of Ge pre-amorphization implantation on Co/Co-Ti/n+-Si contacts in advanced Co interconnects.

43. Selective Intermixing of InAs/InGaAs/InP Quantum Dot Structure With Large Energy Band Gap Tuning

44. A novel three-layer graded SiGe strain relaxed buffer for the high crystal quality and strained Si0.5Ge0.5 layer epitaxial grown.

46. Study of Si Crystal Defects by Chemical Preferential Etching and Its Application on Si Dislocation Defects Caused by Laser Spike Annealing (LSA)

47. Quantitative investigation of the adhesion failure of Ti-based metal thin films on Si wafers

48. Study of low-kv cleaning method to improve TEM samples prepared by FIB

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