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We present measurements and theoretical modeling demonstrating the capability of Doppler Broadened annihilation gamma Spectroscopy (DBS) to provide element-specific information from the topmost atomic layer of surfaces that are either clean or covered with adsorbates or thin films. Our measurements show that the energy spectra of Doppler-shifted annihilation gamma photons emitted following the annihilation of positrons from the topmost atomic layers of clean gold (Au) and copper (Cu) differ significantly. With the aid of the positron annihilation-induced Auger electron spectroscopy (PAES) performed simultaneously with DBS, we show that measurable differences between the Doppler broadened gamma spectra from Au and Cu surfaces in the high energy region of the gamma spectra can be used for the quantification of surface chemical composition. Modeling the measured Doppler spectra from clean Au and Cu surfaces using gamma spectra obtained from ab initio calculations after considering the detector energy resolution and surface positronium formation pointed to an increase in the relative contribution of gamma from positron annihilation with valence shell electrons. The fit result also suggests that the surface-trapped positrons predominantly annihilated with the delocalized valence shell (s and p) electrons that extended into the vacuum as compared to the highly localized d electrons. Simultaneous DBS and PAES measurements from adsorbate (sulfur, oxygen, carbon) or thin film (selenium (Se), graphene) covered Cu surface showed that it is possible to distinguish and quantify the surface adsorbate and thin-film composition just based on DBS. DBS of elemental surfaces presents a promising avenue for developing a characterization tool that can be used to probe external and internal surfaces that are inaccessible by conventional surface science techniques.

We present a simple liquid assisted processing (LAP) method, to be used in-situ during pulsed laser deposition growth to give both rapid growth rates (50 Hz deposition leading to >250 nm/min with a single plume) and strong pinning (improved x 5-10 over plain standard YBCO films grown at similar rates). Achieving these two important features simultaneously has been a serious bottleneck to date. LAP enhances the kinetics of the film growth so that good crystalline perfection can be achieved at up to 60 x faster growth rates than normal, while also enabling artificial pinning centres to be self assembled into fine nanocolumns. In addition, LAP allows for RE mixing (80% of Y with 20% of Yb, Sm, or Yb+Sm), creating effective point-like disorder within the REBCO lattice and which leads to strongly improved pinning at 30 K and below. Overall, LAP is a simple method which could be adopted by other in-situ physical or vapour deposition methods (i.e PLD, MOCVD, evaporation, etc) to significantly enhance both growth rate and performance., Comment: This version has been removed by arXiv administrators as the submitter did not have the legal right to agree to the license at the time of submission

Using polarized neutron reflectometry (PNR), we observe an induced magnetization of 75$\pm$ 25 kA/m at 10 K in a La$_{0.7}$Sr$_{0.3}$MnO$_3$ (LSMO)/BiFeO$_3$ superlattice extending from the interface through several atomic layers of the BiFeO$_3$ (BFO). The induced magnetization in BFO is explained by density functional theory, where the size of bandgap of BFO plays an important role. Considering a classical exchange field between the LSMO and BFO layers, we further show that magnetization is expected to extend throughout the BFO, which provides a theoretical explanation for the results of the neutron scattering experiment., Comment: 5 pages, 4 figures, with Supplemental Materials. To appear in Physical Review Letters

In this study, Si and C were incorporated into polycrystalline MgB2 via in situ reaction of Mg and B with either SiC or with separate Si and C (Si+C). The electrical transport and magnetic properties of the two series of samples were compared. The corrected resistivity at 40K, Rho A(40K), is higher for the SiC reacted samples regardless of carbon (C) substitution level, indicating larger intragrain scattering because of the simultaneous reaction between Mg and SiC and carbon substitution during the formation of MgB2. In addition, because of the cleaner reaction route for the SiC reacted samples, the calculated active area that carries current, AF, is twice that of the (Si+C) samples. On the other hand, the upper critical field, Hc2, was similar for both sets of samples despite their different C substitution levels which proves the importance of defect scattering in addition to C substitution level. Hence, the form of the precursor reactants is critical for tuning the form of Hc2(T)., Comment: accepted for publication

We identify a scalable, practical route to fabricating a superconducting diode. The device relies for its function on the barrier to flux vortex entry being reduced at the substrate interface of a superconducting pinning enhanced YBa2Cu3O7-d nano-composite film. We show that these composite systems provide a practical route to fabricating a useful superconducting diode and demonstrate the rectification of an alternating current., Comment: Version as accepted by APL

The critical current (Jc) of highly twinned YBa2Cu3O7 films has been measured as a function of temperature, magnetic field and angle. For much of the parameter space we observe a strong suppression of Jc for fields in the twin boundary (TB) directions; this is quantitatively modeled as flux-cutting-mediated vortex channeling. For certain temperatures and fields a cross-over occurs to a regime in which channeling is blocked and the TBs act as planar pinning centers so that TB pinning enhances the overall Jc. In this regime, intrinsic pinning along the TBs is comparable to that between the twins., Comment: Submitted to PRL

0.5 to 5.0 wt.% Dy2O3 was in-situ reacted with Mg + B to form pinned MgB2. While Tc remained largely unchanged, Jc was strongly enhanced. The best sample (only 0.5 wt.% Dy2O3) had a Jc of 6.5 x 10^5 A/cm^2 at 6K, 1T and 3.5 x 10^5 A/cm^2 at 20K, 1T, around a factor of 4 higher compared to the pure sample, and equivalent to hot-pressed or nano-Si added MgB2 at below 1T. Even distributions of nano-scale precipitates of DyB4 and MgO were observed within the grains. The room temperature resistivity decreased with Dy2O3 indicative of improved grain connectivity., Comment: 13 pages, 4 figures and 1 table

The influence of the nature of the boron precursor on the superconducting properties of polycrystalline MgB2 was studied. Critical current densities for the MgB2 made from high purity amorphous boron are at least a factor of three higher than typical values measured for standard MgB2 samples made from amorphous precursors. Two possible mechanisms are proposed to account for this difference. Samples made from crystalline boron powders have around an order of magnitude lower Jc compared to those made from amorphous precursors. X-ray, Tc and resistivity studies indicate that this is as a result of reduced current cross section due to the formation of Mg-B-O phases. The samples made from amorphous B contain far fewer Mg-B-O phases than crystalline B despite the fact that the amorphous B contains more B2O3. The different reactivity rates of the precursor powders accounts for this anomaly., Comment: 17 pages, 2 tables, 5 figures, submitted to Superconductor Science and Technology

The critical currents of MOD/RABiTS and PLD/IBAD coated conductors have been measured as a function of magnetic field orientation and compared to films grown on single crystal substrates. By varying the orientation of magnetic field applied in the plane of the film, we are able to determine the extent to which current flow in each type of conductor is percolative. Standard MOD/RABiTS conductors have also been compared to samples whose grain boundaries have been doped by diffusing Ca from an overlayer. We find that undoped MOD/RABiTS tapes have a less anisotropic in-plane field dependence than PLD/IBAD tapes and that the uniformity of critical current as a function of in-plane field angle is greater for MOD/RABiTS samples doped with Ca., Comment: Submitted to APL

Polycrystalline MgB2 samples with GaN additions were prepared by reaction of Mg, B, and GaN powders. The presence of Ga leads to a low melting eutectic phase which allowed liquid phase sintering and produces plate-like grains. For low-level GaN additions (5% at. % or less), the critical transition temperature, Tc, remained unchanged and in 1T magnetic field, the critical current density, Jc was enhanced by a factor of 2 and 10, for temperatures of \~5K and 20K, respectively. The values obtained are approaching those of hot isostatically pressed samples., Comment: 12 pages, 1 table, 4 figures, accepted in Applied Physics Letters

By lithographically fabricating an optimised Wheatstone bridge geometry, we have been able to make accurate measurements of the resistance of grain boundaries in Y1-xCaxBa2Cu3O7-d between the superconducting transition temperature, Tc, and room temperature. Below Tc the normal state properties were assessed by applying sufficiently high currents. The behaviour of the grain boundary resistance versus temperature and of the conductance versus voltage are discussed in the framework charge transport through a tunnel barrier. The influence of misorientation angle, oxygen content, and calcium doping on the normal state properties is related to changes of the height and shape of the grain boundary potential barrier., Comment: 17 pages, 1 table, 5 figures, submitted to PRB

There are numerous potential applications for superconducting tapes, based on YBa2Cu3O7-x (YBCO) films coated onto metallic substrates. A long established goal of more than 15 years has been to understand the magnetic flux pinning mechanisms which allow films to maintain high current densities out to high magnetic fields. In fact, films carry 1-2 orders of magnitude higher current densities than any other form of the material. For this reason, the idea of further improving pinning has received little attention. Now that commercialisation of conductors is much closer, for both better performance and lower fabrication costs, an important goal is to achieve enhanced pinning in a practical way. In this work, we demonstrate a simple and industrially scaleable route which yields a 1.5 to 5-fold improvement in the in-field current densities of already-high-quality conductors.

Two sets of MgB2 samples doped with up to 5 at. % of Al were prepared in different laboratories using different procedures. Decreases in the a and c lattice parameters were observed with Al doping confirming Al substitution onto the Mg site. The critical temperature (Tc) remained largely unchanged with Al doping. For 1 - 2.5 at.% doping, at 20K the in-field critical current densities (Jc's) were enhanced, particularly at lower fields. At 5K, in-field Jc was markedly improved, e.g. at 5T Jc was enhanced by a factor of 20 for a doping level of 1 at.% Al. The improved Jcs correlate with increased sample resistivity indicative of an increase in the upper critical field, Hc2, through alloying., Comment: 17 pages, 4 figures, to be published in Superconductor Science and Technology

We present a comparative study of the angular dependent critical current density in YBa2Cu3O7 films deposited on IBAD MgO and on single crystal MgO and SrTiO3 substrates. We identify three angular regimes where pinning is dominated by different types of correlated and uncorrelated defects. We show that those regimes are present in all cases, indicating that the pinning mechanisms are the same, but their extension and characteristics are sample dependent, reflecting the quantitative differences in texture and defect density. In particular, the more defective nature of the films on IBAD turns into an advantage as it results in stronger vortex pinning, demonstrating that the critical current density of the films on single crystals is not an upper limit for the performance of the IBAD coated conductors., Comment: 14 pages, 3 figures. Submitted to APL

We review recent measurements of upper (Hc2) and lower (Hc1) critical fields in clean single crystals of MgB2, and their anisotropies between the two principal crystallographic directions. Such crystals are far into the "clean limit" of Type II superconductivity, and indeed for fields applied in the c-direction, the Ginzburg-Landau parameter k is only about 3, just large enough for Type II behaviour. Because m0Hc2 is so low, about 3 T for fields in the c-direction, MgB2 has to be modified for it to become useful for high-current applications. It should be possible to increase Hc2 by the introduction of strong electron scattering (but because of the electronic structure and the double gap that results, the scatterers will have to be chosen carefully). In addition, pinning defects on a scale of a few nm will have to be engineered in order to enhance the critical current density at high fields., Comment: BOROMAG Conference Invited paper. To appear in Supercond. Sci. Tech

We discuss pinning properties of MgB2 thin films grown by pulsed-laser deposition (PLD) and by electron-beam (EB) evaporation. Two mechanisms are identified that contribute most effectively to the pinning of vortices in randomly oriented films. The EB process produces low defected crystallites with small grain size providing enhanced pinning at grain boundaries without degradation of Tc. The PLD process produces films with structural disorder on a scale less that the coherence length that further improves pinning, but also depresses Tc.

Bulk samples of MgB2 were prepared with 5, 10, and 15% wt.% Y2O3 nanoparticles added using a simple solid-state reaction route. Transmission electron microscopy (TEM) showed a fine nanostructure consisting of ~3-5 nm YB4 nanoparticles embedded within MgB2 grains of ~400 nm size. Compared to an undoped control sample, an improvement in the in-field critical current density Jc was observed, most notably for 10% doping. At 4.2K, the lower bound Jc value was ~2x105A.cm-2 at 2T. At 20K, the corresponding value was ~8x104A.cm-2. Irreversibility fields were ~11.5 T at 4.2K and 5.5T at 20K, compared to ~4T and ~8T, respectively, for high-pressure synthesized bulk samples.

We have studied the structure of the superconducting gap in MgB2 thin films by means of point-contact spectroscopy using a gold tip. The films were produced by depositing pure boron on a sapphire substrate, using e-beam evaporation, followed by reaction with magnesium vapour. The films have a Tc of 38.6 +- 0.3 K and resistivity of about 20 microOhm cm at 40 K. The point-contact spectra prove directly the existence of a multi-valued order parameter in MgB2, with two distinct values of the gap, DELTA1=2.3+-0.3 meV and DELTA2=6.2+-0.7 meV at 4.2 K. Analysis of the spectra in terms of the Blonder-Tinkham-Klapwijk model reveals that both gaps close simultaneously at the Tc of the film. Possible mechanisms that can explain the intrinsic co-existence of two values of the gap are discussed., Comment: 9 pages, 9 figures

The microwave power, dc magnetic field, frequency and temperature dependence of the surface resistance of MgB2 films and powder samples were studied. Sample quality is relatively easy to identify by a number of characteristics, the most clear being the breakdown in the omega squared law for poor quality samples. Analysis of the experimental data suggests the most attractive procedure for high quality film growth for technical applications., Comment: 14 Pages, 4 Figures

In this paper we present the results of measurements of the microwave surface impedance of a powder sample and two films of MgB$_2$. One film has $T_c=30$ K and is not textured, the other is partially c-axis orientated with $T_c=38$ K. These samples show different types of temperature dependence of the field penetration depth: linear for the powder sample, exponential with $\Delta/kT_c<1.76$ (film with $T_c=30$ K) and strong coupling behaviour with $\Delta/kT_c\sim 2.25$ (film with $T_c=38$ K). The results are well described in terms of an anisotropic gap model or presence of a slightly deficient MgB$_2$ phase. The data set for all samples - taken as a whole cannot be fitted into a two gap scenario., Comment: 4 pages, 3 figures

MgB2 thin films were cold-grown on sapphire substrates by pulsed laser deposition (PLD), followed by post-annealing in mixed, reducing gas, Mg-rich, Zr gettered, environments. The films had Tcs in the range 29 K to 34 K, Jcs (20K, H=0) in the range 30 kA/cm2 to 300 kA/cm2, and irreversibility fields at 20 K of 4 T to 6.2 T. An inverse correlation was found between Tc and irreversibility field. The films had grain sizes of 0.1-1 micron and a strong biaxial alignment was observed in the 950C annealed film., Comment: 12 Pages, 5 figures, submitted to Applied Physics Letters

Measurements of the temperature dependence of the surface resistance at 3 GHz of 100 micron size grains of MgB_2 separated powder are presented and discussed. The microwave surface resistance data is compared to experimental results of Nb, Bi_2Sr_2CaCu_2O_{8+\delta} (BSCCO) and theoretical predictions of s-wave weak coupling electron-phonon theory (BCS)., Comment: 4 pages, 2 figures; accepted in SUST