110 results on '"Douhard, B."'
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2. Understanding the EOT–Jg degradation in Ru/SrTiOx/Ru metal–insulator–metal capacitors formed with Ru atomic layer deposition
3. Comparing n- and p-type polycrystalline silicon absorbers in thin-film solar cells
4. Integration of Inline Single-side Wet Emitter Etch in PERC Cell Manufacturing
5. Simulation of the Anneal of Ion Implanted Boron Emitters and the Impact on the Saturation Current Density
6. Si passivation for Ge pMOSFETs: Impact of Si cap growth conditions
7. Evidence of covalent bond formation at the silane–metal interface during plasma polymerization of bis-1,2-(triethoxysilyl)ethane (BTSE) on aluminium
8. MCs n+ cluster formation on organic surfaces: A novel way to depth-profile organics?
9. Molecular depth profiling of polymers with very low energy ions
10. The Storing Matter technique: Preliminary results on PS and PVC
11. Metallic nanoparticles on plasma treated carbon nanotubes: Nano 2hybrids
12. Measurement and modeling of work function changes during low energy cesium sputtering
13. Photoemission studies of gold clusters thermally evaporated on multiwall carbon nanotubes
14. Atomically flat GaMnN by diffusion of Mn into GaN( [formula omitted])
15. Caesium/xenon dual beam depth profiling: Velocity of the sputtered atom and ionization probability
16. Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration
17. Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration
18. Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si
19. Editors' Choice—Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures
20. Comprehensive study of Ga activation in Si, SiGe and Ge with 5 × 10−10 Ω·cm2 contact resistivity achieved on Ga doped Ge using nanosecond laser activation
21. Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si.
22. Ultralow-resistivity CMOS contact scheme with pre-contact amorphization plus Ti (germano-)silicidation
23. Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates
24. Influence of Doping and Tunneling Interface Stoichiometry on n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki Diode Behavior
25. Field Effect and Strongly Localized Carriers in the Metal-Insulator Transition MaterialVO2
26. Editors' Choice--Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures.
27. Staggered band gap n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki diode investigations for TFET device predictions
28. Cesium/Xenon dual beam sputtering in a Cameca instrument
29. Material Studies on Si:C Epitaxial Films Grown by CVD
30. Evaluation of the Si0.8Ge0.2-on-Si Epitaxial Quality by Inline Surface Light Scattering: A Case Study on the Impact of Interfacial Oxygen
31. An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates
32. Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
33. Epitaxial Chemical Vapor Deposition of Silicon on an Oxygen Monolayer on Si(100) Substrates
34. Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique
35. Heteroepitaxy of III-V Compound Semiconductors on Silicon for Logic Applications: Selective Area Epitaxy in Shallow Trench Isolation Structures vs. Direct Epitaxy Mediated by Strain Relaxed Buffers
36. Implantation and Activation of Phosphorus in Amorphous and Crystalline Germanium Layers
37. Towards the Monolithic Integration of III-V Compound Semiconductors on Si: Selective Area Growth in High Aspect Ratio Structures vs. Strain Relaxed Buffer-Mediated Epitaxy
38. GeSn channel nMOSFETs: Material potential and technological outlook
39. Simulation of the post-implantation anneal for emitter profile optimization in high efficiency c-Si solar cells
40. High performance n-MOS finFET by damage-free, conformal extension doping
41. Highly Scaled Vertical Cylindrical SONOS Cell With Bilayer Polysilicon Channel for 3-D nand Flash Memory
42. Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
43. Novel Bi-Layer Poly-Silicon Channel Vertical Flash Cell for Ultrahigh Density 3D SONOS NAND Technology
44. Contact resistivity and Fermi-level pinning in n-type Ge contacts with epitaxial Si-passivation
45. Ge Chemical Vapor Deposition on GaAs for Low Resistivity Contacts
46. Record low contact resistivity to n-type Ge for CMOS and memory applications
47. On the understanding of positive and negative ionization processes during ToF-SIMS depth profiling by co-sputtering with cesium and xenon
48. MCsn+ cluster formation on organic surfaces: A novel way to depth-profile organics?
49. Scanning Transmission X-ray Microscopy of Individual Multi-Walled Carbon Nanotubes: Linear Dichroism and Functionalization Chemistry
50. Simulation of the post-implantation anneal for emitter profile optimization in high efficiency c-Si solar cells.
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