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We report on an efficient Yb:KLu(WO4)2 laser that could be passively Q-switched with 2D MoTe2 serving as saturable absorber. Stable repetitively Q-switched operation was realized with the resonator output coupling changed over a wide range from 10 to 90%, producing a maximum output power of 2.06 W at a repetition rate of 2.18 MHz with an optical-to-optical efficiency of 35%, while the slope efficiency was 56%. The largest pulse energy, shortest duration, and highest peak power achieved were 1.3 µJ, 36 ns, and 36.1 W, respectively. [ABSTRACT FROM AUTHOR]

Highly efficient high-power laser operation around 1084 nm is demonstrated of the Yb 0 . 14 : Y 0 . 77 Gd 0 . 09 Ca 4 O ( BO 3 ) 3 mixed crystal in a compact plano-concave resonator, producing an output power of 18.1 W in free-running mode, with optical-to-optical and slope efficiencies being, respectively, 60% and 70% with respect to incident pump power. In laser action achieved with the high-gain short-wavelength oscillation being suppressed, the highest output power reaches 16.2 W with an optical-to-optical efficiency of 50.3%, while the slope efficiency amounts to 58%. The results presented reveal the superiority of the Yb-ion doped mixed oxyborate crystal to the existing Yb-ion or Nd-ion crystals capable of generating high-power laser radiation around 1084 nm. [ABSTRACT FROM AUTHOR]

Abstract We report on a highly efficient, compact, passively Q-switched Yb:KLu(WO 4) 2 laser, with few-layer MoS 2 or WS 2 acting as saturable absorber. A maximum output power of 2.45 W was generated at a repetition rate of 2.52 MHz, with 6.49 W of pump power absorbed in passively Q-switched operation induced by MoS 2 ; the largest pulse energy, shortest duration, and highest peak power were, respectively, 1.27 μ J, 43 ns, and 29.5 W. With WS 2 as saturable absorber, the output power attainable in stable Q-switched operation was 1.87 W, produced with an optical-to-optical efficiency of 37% and a slope efficiency of 71%. The minimum pulse duration obtained was 39 ns; while the largest pulse energy and highest peak power were 1.19 μ J and 30.5 W. Highlights • Power scaling to 2-W level is demonstrated for Yb:KLuW/MoS 2 (WS 2) laser. • Pulse repetition rates up to 2.5 MHz are reached in stable passively Q-switched action. • Shortest pulse duration of 39 ns is achieved. [ABSTRACT FROM AUTHOR]

We report on passive Q-switching action induced by a few-layer MoTe 2 saturable absorber in an Yb:YCa 4 O(BO 3 ) 3 (Yb:YCOB) microchip laser. With a sapphire-based few-layer MoTe 2 incorporated into the 4 mm long plane-parallel resonator of the Yb:YCOB microchip laser, efficient stable passively Q-switched operation was achieved under output couplings of 40%-70%, producing, at an incident pump power of 5.0 W, an average output power of 1.58 W at a repetition rate of 704 kHz with a slope efficiency of 36%; the pulse energy and peak power were respectively 2.25 μJ and 40.8 W, while the shortest pulse duration obtained was 52 ns.

An experimental investigation was carried out to evaluate the potential of few-layer Bi 2 Te 3 topological insulator in use as a saturable absorber for passive Q-switching of compact solid-state lasers in the 1-μm spectral region. By incorporating a sapphire-based few-layer Bi 2 Te 3 sample into a Yb:LuPO 4 laser that was formed with a 4-mm plane-parallel resonator, we realized efficient, high-power, high-repetition-rate pulsed laser operation. Depending on the output coupling utilized, single- or dual-wavelength laser action could be achieved. A maximum output power of 5.02 W at 1014.5 nm was produced at a pulse repetition rate of 1.67 MHz, with an optical-to-optical efficiency of 41% and a slope efficiency of 54%; while operating at 1004.9/1012.7 nm, the pulsed laser could produce an output power of 3.94 W at 1.38 MHz, with a pulse duration being as short as 34 ns. The largest pulse energy and highest peak power achieved were 3.0 μJ and 85.3 W. The results demonstrated in our experiment reveal the great potential of the few-layer Bi 2 Te 3 topological insulator in the development of pulsed compact solid-state lasers in the 1-μm region.

We report on a miniature Yb:LuPO 4 crystal laser at 1.01 μm that is passively Q-switched with a sapphire-based few-layer WS 2 saturable absorber, and that can be operated under very high output couplings (≥80%). With 12.6 W of pump power absorbed, an average output power of 4.35 W is generated at a repetition rate of 1.33 MHz with a slope efficiency of 47%. The maximum pulse energy and highest peak power achieved are 3.41 μJ and 110 W, respectively; while the shortest pulse duration obtained is 28.6 ns. To the best of our knowledge, these results represent the highest output power and shortest pulse duration ever achieved in the 1 μm region from solid-state lasers passively Q-switched by using two-dimensional saturable absorbers.

We demonstrate a Yb:LuPO 4 miniature crystal laser that is formed with a 5 mm long plane-parallel resonator, and is passively Q-switched by a few-layer MoS 2 saturable absorber. With 6.53 W of pump power absorbed, an average output power of 2.06 W at 1020.8 nm is generated at a pulse repetition rate of 429 kHz with a slope efficiency of 50%; the resulting pulse energy, duration, and peak power are respectively 4.8 μJ, 83 ns, and 57.8 W. While operating at 1010.5 nm, the laser is capable of producing an average output power of 1.53 W at a repetition rate of 870 kHz, with pulse duration being shortened to 61 ns. These results represent a significant progress in the development of Yb- or Nd-ion lasers passively Q-switched by two-dimensional MoS 2 .