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The article considers the relevance of modern developments of qualitatively new food products based on soy biologically modified concentrates, secondary types of flour for nutritional support of the diet of various population groups; the classification of food concentrates – semi-finished flour products according to the current standard is considered; the research is presented, on the basis of which a dry mixture has been developed-a food concentrate for baking a cupcake with soy shell flour, including premium wheat flour, soy shell flour and other ingredients of the formulation, such as egg powder, whole milk powder, baking soda, citric acid, granulated sugar, vanillin, dried grapes, in a mass ratio wheat flour: soy shell flour: other components of the formulation 62.4%:20:17.6%; it is shown that soy shell flour is the most valuable source of minerals such as potassium, magnesium, sodium, phosphorus, calcium, iron, zinc, dietary fiber and is characterized by a ratio of saturated fatty acids to unsaturated as 1:3-3.5; it is proved that the use of soy shell flour allows you to increase the protein content, food fibers, zinc, iron in the finished product, which meets the needs of the consumer.

In this paper, we report on optimizing the conditions for subsequently growingsingle-phase films of calcium monosilicide (CaSi) and calcium disilicide (CaSi2) on single-crystal silicon by reactive deposition epitaxy (RDE) and molecular beam epitaxy (MBE). The temperature range for the growth of CaSi films (400–500 °C) was determined, as well as the temperature range (600–680 °C) for the growth of CaSi2 films on silicon with three orientations: (111), (100) and (110). The minimum temperatures for the epitaxial growth of CaSi films by the RDE method and CaSi2 films by the MBE method were determined, amounting to, respectively, T = 475 °C and T = 640 °C. An increase in the ratio of Ca to Si deposition rates to 26 made it possible to grow a large-block CaSi2 epitaxial film with the hR6 structure by the MBE method at T = 680 °C. Raman spectra and reflection spectra from single-phase epitaxial CaSi and CaSi2 films on silicon were recorded and identified for the first time. The correspondence between the experimental reflection spectra and the theoretically calculated reflection spectra in terms of amplitude and peak positions at photon energies of 0.1–6.5 eV has been established. Single-phase CaSi and CaSi2 films retain transparency in the photon energy range 0.4–1.2 eV.

In this study, the appearance of magnetic moments and ferromagnetism in nanostructures of non-magnetic materials based on silicon and transition metals (such as iron) was considered experimentally and theoretically. An analysis of the related literature shows that for a monolayer iron coating on a vicinal silicon surface with (111) orientation after solid-phase annealing at 450–550 °C, self-ordered two-dimensional islands of α-FeSi2 displaying superparamagnetic properties are formed. We studied the transition to ferromagnetic properties in a system of α-FeSi2 nanorods (NRs) in the temperature range of 2–300 K with an increase in the iron coverage to 5.22 monolayers. The structure of the NRs was verified along with distortions in their lattice parameters due to heteroepitaxial growth. The formation of single-domain grains in α-FeSi2 NRs with a cross-section of 6.6 × 30 nm2 was confirmed by low-temperature and field studies and FORC (first-order magnetization reversal curves) diagrams. A mechanism for maintaining ferromagnetic properties is proposed. Ab initio calculations in freestanding α-FeSi2 nanowires revealed the formation of magnetic moments for some surface Fe atoms only at specific facets. The difference in the averaged magnetic moments between theory and experiments can confirm the presence of possible contributions from defects on the surface of the NRs and in the bulk of the α-FeSi2 NR crystal lattice. The formed α-FeSi2 NRs with ferromagnetic properties up to 300 K are crucial for spintronic device development within planar silicon technology. [ABSTRACT FROM AUTHOR]

Mg2Si layers were grown on silicon by RDE at 150 °C and by SPE at 160 °C, and they were covered by silicon cap grown by MBE at 150-180 °C. The silicide layers and the silicon cap were investigated by in situ and ex situ methods. The 2D Mg2Si layer continuity and electrical properties were conserved during cap growth. The point defects in the structure are dominated by contamination of the substrate and by diffusion of the not reacted Mg into silicon. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

Optimization of growth parameters has permitted to create monolithic nanocomposites with buried nanocrystallites (NCs) of iron and chromium disilicides, polycrystalline nanocomposites with buried Mg2Si NCs and epitaxial MnSi1.74 nanoislands on Si(111) substrate. Grown quasi-zero dimensional heterostructures with multilayers of β-FeSi2 NCs atop silicon p-n junction have demonstrated the range expansion of photoelectrical sensitivity up to 1.8 µm and strong room temperature electroluminescence at 1.2 - 1.6 µm. A new approach to the selective doping of embeddded nanocrystallites inside silicon matrix has been developed on the base of the successive formation of ordered superstructures of metals (Ag, Sb) together with silicide island formation. Nanocomposite layers with n- and p-type conductivity and huge Seebeck coefficient (550-750 µV/K) in the Si-p/β-FeSi2 NCs/Si-p and Si/Mg2Si NCs/Si-p and Si/Mg2Si NCs/Si-n nanocomposites have been created and tested. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

Si/Ca2Si/Si(111) and Si/Ca3Si4/Si(111) heterostructures have been formed by procedure of layer-by-layer deposition of Ca at 130 °C or 500 °C on previously formed layer of amorphous Si or on a polycrystalline Si layers. Features of electronic structure, optical and electrical properties were established by in situ and ex situ methods. Strong direct interband transitions at 0.89 and 0.912 eV were firstly found for Ca3Si4 film grown at 500 °C. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]