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In this paper, we investigate the decomposition of a toxic organic compound, Rhodamine B, by the photocatalytic activities of undoped and nitrogen-doped ZrO2 thin films, deposited using the HiPIMS technique. The investigation was performed in the presence and in the absence of H2O2, for two types of experimental arrangements: the irradiation of the films, followed by dipping them in the Rhodamine B solutions, and the irradiation of the films dipped in the solution. The two situations were named "direct irradiation" and "indirect irradiation", respectively. Methods like XRD, AFM, XPS, DRS, water/film surface contact angle, and spectrophotometry were used to obtain information on the films' structure, surface morphology, elemental composition of the films surface, optical band gap, hydrophilicity, and photocatalytic activity, respectively. All these properties were described and correlated. By N-doping ZrO2, the films become absorbent in the visible domain, so that the solar light could be efficiently used; the films' hydrophilic properties improve, which is an important fact in self-cleaning applications; and the films' photocatalytic activity for the decomposition of Rhodamine B becomes better. The addition of hydrogen peroxide acted as an inhibitor for all systems and not as an accelerator of the photocatalytic reactions as expected. [ABSTRACT FROM AUTHOR]

In the presented work, B4C was irradiated with xenon swift heavy ions at the energy of 167 MeV. The irradiation of the substrate was done at room temperature to a fluence of 3.83 × 1014 ion/cm2. The samples were then analyzed with the X-ray diffraction technique to study the structural modification, as it can probe the region of penetration of xenon atoms due to the low atomic number of the two elements involved in the material under study. The nano-cluster formation under ion irradiation was observed. Positron lifetime (PLT) calculations of the secondary point defects forming nanoclusters and introduced into the B4C substrate by hydrogen and helium implantation were also carried out with the Multigrid instead of the K-spAce (MIKA) simulation package. The X-ray diffraction results confirmed that the sample was B4C and it had a rhombohedral crystal structure. The X-ray diffraction indicated an increase in the lattice parameter due to the Swift heavy ion (SHI) irradiation. In B12-CCC, the difference between τ with the saturation of H or He in the defect is nearly 20 ps. Under the same conditions with B11C-CBC, there is approximately twice the value for the same deviation. [ABSTRACT FROM AUTHOR]

Herein, the properties of the organic heterostructures with triple‐layer ZnO/Ag/ZnO as a replacement for ITO and mixed layer containing arylenevinylene oligomer (based on triphenylamine or carbazole) donor and nonfullerene (perylene diimide) acceptor mixed in the ratio 1:2 and the effect of a buffer layer of PEDOT‐PSS intercalated between triple layer and mixed organic layer are discussed. The UV−vis transmission and photoluminescence (PL) properties are investigated in correlation with the surface topography and reveal a good match between the absorption and emission domain, which can favor the generation of the charge carriers. The heterostructure with the mixed layer based on triphenylamine oligomer shows the widest absorption domain, and the PL spectra of the heterostructures realized with either triphenylamine or carbazole oligomer show peaks corresponding to the radiative decay of the donor and acceptor. The I−V characteristics in the dark indicate a slightly nonlinear behavior and the current is affected by the charge carriers recombination on the defects present in the thick mixed layer deposited by matrix‐assisted pulsed laser evaporation. The effect of the PEDOT‐PSS buffer layer on the electrical properties of the organic heterostructure with ZnO/Ag/ZnO electrode is also investigated. [ABSTRACT FROM AUTHOR]

The current transfer through a two-layer structure saturated with absorbed water, each layer of which consists of pressed ZrO2 nanoparticles with two sizes (10 and 20 nm), has been studied. The structure was obtained using the isostatic pressing the ZrO2 + H2O powders. The form of current–voltage characteristics inherent to the studied structure, that has diode properties with the rectification coefficient close to 3, has been explained by the appearance of a potential barrier at the interlayer boundary. [ABSTRACT FROM AUTHOR]