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In this study, ultrathin (4-40 nm) Cu-layer-based transparent heaters prepared on glass substrates were investigated for cost-effective applications. The Cu heaters were embedded between ZnO layers serving as anti-reflection and anti-corrosion layers. The Cu layer thicknesses varied in the range of 4-40 nm, and the corresponding structural, electrical, optical and thermal properties were evaluated. Cu was found to follow the Volmer-Weber 3D growth mode in the early deposition stage, where isolated islands grow and coalesce to form a continuous layer at ~12 nm. In the thickness regime of discontinuous Cu layers, a significant increase in sheet resistance was observed due to the reduced current paths and the high severity of electron scattering at the Cu/ZnO interfaces. Because of light absorption associated with the localized surface plasmon resonance (LSPR) in the presence of pores in the films, visible transparency peaks near the thickness of the complete film-closure, beyond which stronger light absorption decreases transparency. The sheet resistance of the transparent heaters was modulated in the range of 0.8-96.2 Ω/sq. The heating characteristics well follow Joule’s law which predicts a higher temperature for a lower-resistance heater at a given voltage. The measured temperature-power relation is linear, from which the important heater parameter of convective heat transfer coefficient is extracted.

A vital objective in the wetting of Au deposited on chemically heterogeneous oxides is to synthesize a completely continuous, highly crystalline, ultrathin-layered geometry with minimized electrical and optical losses. However, no effective solution has been proposed for synthesizing an ideal Au-layered structure. This study presents evidence for the effectiveness of atomic oxygen-mediated growth of such an ideal Au layer by improving Au wetting on ZnO substrates with a substantial reduction in free energy. The unexpected outcome of the atomic oxygen-mediated Au growth can be attributed to the unconventional segregation and incorporation of atomic oxygen along the outermost boundaries of Au nanostructures evolving in the clustering and layering stages. Moreover, the experimental and numerical investigations revealed the spontaneous migration of atomic oxygen from an interstitial oxygen surplus ZnO bulk to the Au-ZnO interface, as well as the segregation (float-out) of the atomic oxygen toward the top Au surfaces. Thus, the implementation of a 4-nm-thick, two-dimensional, quasi-single-crystalline Au layer with a nearly complete crystalline realignment at a mild temperature (570 K) enabled exceptional optoelectrical performance with record-low resistivity (7.5 × 10

In this study, we prepared highly thermostable semi-transparent heaters composed of W layers with thicknesses of 1-20 nm, on which a 30 nm-thick ZnO layer was deposited to serve as an anti-oxidation barrier. The optical transmittance and sheet resistance of the heaters could be greatly modulated by varying the W layer thickness. For layer thicknesses up to 10 nm, the initial Joule heating above 100 oC significantly reduced the sheet resistance, by 300% for a 6 nm-thick W layer at a fixed voltage for a duration of 400 s. During the test period, heater current and heating capability continuously increased. In subsequent heater operations, the heaters exhibited highly reproducible heating capability. In contrast, for films thicker than 10 nm, the Joule heating process resulted in only a marginal reduction in sheet resistance, i.e., by 4% for a 20 nm-thick W layer. In order to investigate the sharp dependence of heater characteristics on thickness, we performed x-ray diffraction analyses, which revealed that the films thinner than 10 nm were composed of both the equilibrium low-resistivity α-phase and metastable high-resistivity β-phase, and films thicker than 10 nm contained mostly α-phase. The Joule heating process for the thinner films was found to transform the β-phase into α-phase at temperatures above 100 oC, which resulted in significant improvement in the heating capability of the 6 nm-thick W layer. For films thicker than 10 nm, the W layers contained mostly α-phase and no such transformation-induced effects were observed. Finally, W heaters composed of α-phase exhibited highly thermostable and reproducible heater properties, which make the heaters suitable for applications with semi-transparent heaters.

In this study, we report a methodology that simultaneously improved the corrosion resistance and visible transparency of ZnO/Cu/ZnO transparent heaters with the addition of reactively sputtered Al2O3 layers. To assess corrosion resistance, ZnO and Al2O3 layers with thicknesses in the range of 0-20 nm were deposited onto 20 nm-thick Cu layer, and the corrosion behavior of the underlying Cu layers was investigated by evaluating the sheet resistance change in an 85 °C/85% humidity test. While the 20 nm-thick ZnO layer was not an effective moisture barrier, showing a sheet resistance increase of more than 50% after 10,000 m, the sheet resistance of the Cu layer below the 5 nm-thick Al2O3 layer did not show an observable increase for equal duration. Optical transmittance was also investigated by constructing glass/ZnO/Cu/ZnO/Al2O3 structures with varying thicknesses for the top ZnO and Al2O3 layers, in the range of 10-30 and 10-60 nm, respectively The thicknesses of the bottom ZnO and Cu layers were fixed at 30 nm and 10 nm. The results revealed that the average visible light transmittance of the ZnO/Cu/ZnO/Al2O3 structure increased by 2.5% over the optimized ZnO/Cu/ZnO structure.

A methodology for the simultaneous modulation of the chemical and physical states of an amorphous TiO

In this study, the critical role of substrate bias during the sputter deposition of Al thin films is discussed. Two sets of Al thin films having a nominal thickness of 300 nm were deposited at sputtering pressures of 4.1 and 1.5 mTorr, respectively, with an applied negative substrate bias in the range of 0-200 V. It was found that the microstructure, surface roughness, film resistivity and grain size were greatly altered by the combination of bias magnitudes and sputtering pressures. The sputtering pressure of 4.1 mTorr resulted in greater changes in the film properties with the application of substrate bias, and a lesser but still significant degree was observed for the films deposited at 1.5 mTorr. The resistivity values for the films deposited at 1.5 mTorr were found to be significantly lower, with the lowest resistivity value of 3.1 µΩcm achieved at a substrate bias of 50 V. Based on grain size measured by the line intercept method and MayadasShatzkes grain boundary scattering model, the resistivity contribution of grain boundary scattering for the lowest-resistivity film was found to be 0.37 µΩcm, which indicates that the film resistivity in the optimized condition is close to the known bulk resistivity of 2.65 µΩcm.

This article provides a secret key extraction aided by wireless transceiver for Internet of Things (IoT) based consumer electronic (CE) devices, which can be a promising alternative to the conventional secret storage with non-volatile memory. Exploiting the wireless transceiver as a source of secret key generation, we propose a new type of static random access memory (SRAM) physically unclonable function (PUF), especially focusing on run-time extraction from most connected CE devices without additional hardware. The response of the proposed PUF is further processed by a fuzzy extractor to reproduce the secure key, where we suggest to use low-complexity convolutional code combined with interleaver for error correction. In addition, run-time multiple readout capability of our wireless transceiver aided PUF enables to provide a helper data-less key reproduction scheme to reduce leaked information and implementation complexity. Experimental results on two platforms equipped with the IEEE 802.11 Wi-Fi and IEEE 802.15.4g Smart Utility Network (SUN) based wireless transceivers confirm that the proposed PUF and key reproduction schemes successfully generate the secret key at any time, which makes our approach easily applicable to various IoT based CE devices with security requirements.

Quantum modular multiplication circuit is one of the basic quantum computation circuits which are basic functions in quantum algorithms. However, since quantum-quantum modular multipliers require a high cost reversible modular inversion routine for modular multiplication, researchers have been unable to propose a feasible quantum-quantum modular multiplier. In this paper, we proposed efficient quantum-classical modular multipliers and the first quantum-quantum modular multipliers that do not require a reduction stage by transforming the partial product used in multiplication utilizing bit-shift operation. Then, we calculated quantum resource complexity and analyzed it compared to other quantum modular multipliers and utilized ETRI (Electronics and Telecommunications Research Institute) Qcrypton to analyze quantum resource complexity in the practical quantum computing situation. The proposed quantum modular multipliers show an improvement of 50% in terms of gates and circuit depth compared to the most recently proposed high-performance quantum modular multipliers.

To create an environment for IoT devices, securely, it is necessary to establish a cryptographic key for those devices. Conventionally, this key has been stored on the actual device, but this leaves the key vulnerable to physical attacks in the IoT environment. To solve this problem, several research studies have been conducted on how best to conceal the cryptographic key. Recently, these studies have most often focused on generating the key dynamically from noisy data using a fuzzy extractor or providing secure storage using a fuzzy commitment. Thus, far, all of these studies use only one type of noisy source data, such as biometric data or physical unclonable function (PUF). However, since most IoT devices are operated in unmanned environments, where biometric data is unavailable, the method using biometric data cannot be utilized for unmanned IoT devices. Although the method using PUF is applied to these unmanned devices, these are still vulnerable against physical attacks including unintended move or theft. In this paper, we present a novel way to use the fuzzy commitment on such devices, called two-factor fuzzy commitment scheme. The proposed method utilizes two noisy factors from the inside and outside of the IoT device. Therefore, although an attacker acquiring the IoT device can access the internal noisy source, the attacker cannot extract the right key from that information only. We also give a prototype implementation for ensuring the feasibility of our two-factor fuzzy commitment concept by utilizing the image data and PUF data for two noisy factors.