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As the competition intensifies in enhancing the integration and performance of integrated circuits, in accordance with the famous Moore’s Law, higher performance and smaller size requirements are imposed on the dielectric layers in electronic devices. Compared to vacuum methods, the production cost of preparing dielectric layers via solution methods is lower, and the preparation cycle is shorter. This paper utilizes a low-temperature self-exothermic reaction based on the solution method to prepare high-performance Al2O3 dielectric thin films that are compatible with flexible substrates. In this paper, we first established two non-self-exothermic systems: one with pure aluminum nitrate and one with pure aluminum acetylacetonate. Additionally, we set up one self-exothermic system where aluminum nitrate and aluminum acetylacetonate were mixed in a 1:1 ratio. Tests revealed that the leakage current density and dielectric constant of the self-exothermic system devices were significantly optimized compared to the two non-self-exothermic system devices, indicating that the self-exothermic reaction can effectively improve the quality of the dielectric film. This paper further established two self-exothermic systems with aluminum nitrate and aluminum acetylacetonate mixed in 2:1 and 1:2 ratios, respectively, for comparison. The results indicate that as the proportion of aluminum nitrate increases, the overall dielectric performance of the devices improves. The best overall performance occurs when aluminum nitrate and aluminum acetylacetonate are mixed in a ratio of 2:1: The film surface is smooth without cracks; the surface roughness is 0.747 ± 0.045 nm; the visible light transmittance reaches up to 98%; on the basis of this film, MIM devices were fabricated, with tested leakage current density as low as 1.08 × 10−8 A/cm2 @1 MV and a relative dielectric constant as high as 8.61 ± 0.06, demonstrating excellent electrical performance.

Abstract Protonic solid oxide electrolysis cells (P‐SOECs) operating at intermediate temperatures, which have low costs, low environmental impact, and high theoretical electrolysis efficiency, are considered promising next‐generation energy conversion devices for green hydrogen production. However, the developments and applications of P‐SOECs are restricted by numerous material‐ and interface‐related issues, including carrier mismatch between the anode and electrolyte, current leakage in the electrolyte, poor interfacial contact, and chemical stability. Over the past few decades, considerable attempts have been made to address these issues by improving the properties of P‐SOECs. This review comprehensively explores the recent advances in the mechanisms governing steam electrolysis in P‐SOECs, optimization strategies, specially designed components, electrochemical performance, and durability. In particular, given that the lack of suitable anode materials has significantly impeded P‐SOEC development, the relationships between the transferred carriers and the cell performance, reaction models, and surface decoration approaches are meticulously probed. Finally, the challenges hindering P‐SOEC development are discussed and recommendations for future research directions, including theoretical calculations and simulations, structural modification approaches, and large‐scale single‐cell fabrication, are proposed to stimulate research on P‐SOECs and thereby realize efficient electricity‐to‐hydrogen conversion.

In this study, a KrF excimer laser with a high-absorption coefficient in metal oxide films and a wavelength of 248 nm was selected for the post-processing of a film and metal oxide thin film transistor (MOTFT). Due to the poor negative bias illumination stress (NBIS) stability of indium gallium zinc oxide thin film transistor (IGZO-TFT) devices, terbium-doped Tb:In2O3 material was selected as the target of this study. The XPS test revealed the presence of both Tb3+ and Tb4+ ions in the Tb:In2O3 film. It was hypothesized that the peak of the laser thermal effect was reduced and the action time was prolonged by the f-f jump of Tb3+ ions and the C-T jump of Tb4+ ions during the laser treatment. Studies related to the treatment of Tb:In2O3 films with different laser energy densities have been carried out. It is shown that as the laser energy density increases, the film density increases, the thickness decreases, the carrier concentration increases, and the optical band gap widens. Terbium has a low electronegativity (1.1 eV) and a high Tb-O dissociation energy (707 kJ/mol), which brings about a large lattice distortion. The Tb:In2O3 films did not show significant crystallization even under laser energy density treatment of up to 250 mJ/cm2. Compared with pure In2O3-TFT, the doping of Tb ions effectively reduces the off-state current (1.16 × 10−11 A vs. 1.66 × 10−12 A), improves the switching current ratio (1.63 × 106 vs. 1.34 × 107) and improves the NBIS stability (ΔVON = −10.4 V vs. 6.4 V) and positive bias illumination stress (PBIS) stability (ΔVON = 8 V vs. 1.6 V).

Metal nanoparticles have been extensively used as co-catalysts in photocatalytic systems in order to pursue improvements in both reaction kinetics and selectivity. In this work, PdAg dual-metallic nanoparticles synthesized by the co-reduction method were decorated on a well-established α-Fe2O3/CdS Z-scheme photoactive material as a co-catalyst to study their performance for promoting the photoreduction of CO2. Herein, α-Fe2O3 and CdS were in situ synthesized on fluorine-doped tin oxide (FTO) glass by hydrothermal and SILAR (successive ionic layer adsorption and reaction) methods, respectively. The direct Z-scheme charge transfer path between Fe2O3 and CdS and the effective electron migration toward the PdAg mainly contributed to the excellent photocatalytic CO2 reduction performance. The controllable work function based on Pd (5.12) and Ag (4.26) constructed an appropriate band alignment with α-Fe2O3/CdS and displayed favorable production for CH4 rather than CO. The optimum ratio of PdAg 1:2 performed a 48% enhancement than pure Pd for photoreduction of CO2. Meanwhile, the enhanced charge separation improved the photoelectrochemical performance and photocurrent generation, and reduced the electrical resistance between components. This work provided insights into the dual-metallic co-catalyst for boosting the activity and selectivity of photocatalytic CO2 reduction.

Photocatalytic benzyl alcohol (BA) oxidation to value-added chemicals by semiconductors has attracted massive attentions due to its industrial interest. In this work, Z-scheme heterojunction photocatalysts composed of FAPbBr3 nanocrystals (NCs) and WO3 with different morphologies are prepared. Benefiting from the strong redox potential and morphological engineering, the Z-scheme heterojunction photocatalyst exhibits an outstanding performance of BA oxidation to benzaldehyde (BD) with 99% selectively. Remarkably, after manipulating the size of FAPbBr3 NCs to quantum dots (QDs), benzoic acid (BZ) as the main product (90% selectivity) of BA oxidation can be generated on the Z-scheme photocatalyst. As revealed by in-situ electronic paramagnetic resonance (EPR), a new radical will be generated over the FAPbBr3 QDs/WO3 which alters the product of benzyl alcohol oxidation form BD to BZ.

With the rapid development of photocatalysis field, photocatalysts have received increasing attention due to their important role in environmental pollution and energy crisis. As a nonmetallic polymeric material, graphite carbon nitride (g-C3N4) is rich in sources and its preparation is simple, and thus has been widely used as a visible-light-responsive photocatalyst. In this review, we have summarized the recent progress related to the design, modification, and construction of g-C3N4 based photocatalysts with excellent photocatalytic performances. First, we have described the basic structure and properties of g-C3N4. Thereafter, we have pointed out that the defects of pristine g-C3N4 and illustrated the general design principles for all of modified strategies. Subsequently, we have discussed various strategies to optimize the photocatalytic properties of g-C3N4 in detail, including constructing Z-scheme heterojunctions based on g-C3N4, morphological controlling, metal deposition, ion doping, dye sensitization, quantum dots modification, and acid treatment. Particularly, we have comprehensively explicated the critical factors governing the performance of the photocatalyst and the enhanced photocatalytic mechanisms of each modification strategy with examples. Finally, we have indicated the challenges of photocatalysis technology using g-C3N4 and proposed the opportunities for further development.

An electrochemical sensor enabled by electropolymerization (EP) of β-cyclodextrin on glassy carbon electrode (β-CDP/GCE) is built for the determination of fenitrothion (FNT). The effects of the EP cycles, pH value, and enrichment time on the electrochemical response of FNT were studied. With the optimum conditions, good linear relationships between the current of the reduction peak of the nitroso derivative of FNT and the concentration are obtained in the range of 10–150 and 150–4000 ng/mL, with a detection limit of 6 ng/mL (S/N = 3). β-CDP/GCE also exhibits a satisfactory applicability in cabbage and tap water, with recovery values between 98.43% and 112%. These outstanding results suggest that β-CDP/GCE could be a new effective alternative for the determination of FNT in real samples.

Electrochromic materials have been considered as a new way to achieve energy savings in the building sector due to their potential applications in smart windows, cars, aircrafts, etc. However, the high cost of manufacturing ECDs using the conventional manufacturing methods has limited its commercialization. It is the advantages of low cost as well as resource saving, green environment protection, flexibility and large area production that make printing electronic technology fit for manufacturing electrochromic devices. This paper reviews the progress of research on printed electrochromic devices (ECDs), detailing the preparation of ECDs by screen printing, inkjet printing and 3D printing, using the scientific properties of discrete definition printing method. Up to now, screen printing holds the largest share in the electrochromic industry due to its low cost and large ink output nature, which makes it suitable especially for printing on large surfaces. Though inkjet printing has the advantages of high precision and the highest coloration efficiency (CE) can be up to 542 ± 10 cm2C–1, it has developed smoothly, and has not shown rigid needs. Inkjet printing is suitable for the personalized printing production of high precision and small batch electronic devices. Since 3D printing is a new manufacturing technology in the 21st century, with the characteristics of integrated molding and being highly controllable, which make it suitable for customized printing of complex devices, such as all kinds of sensors, it has gained increasing attention in the past decade. Finally, the possibility of combining screen printing with inkjet printing to produce high performance ECDs is discussed.

Conversion of hazardous compounds to value-added chemicals using clean energy possesses massive industrial interest. This applies especially to the hazardous compounds that are frequently released in daily life. In this work, a S-scheme photocatalyst is optimized by rational loading of carbon quantum dots (CQDs) during the synthetic process. As a bridge, the presence of CQDs between TiO2 and CdIn2S4 improves the electron extraction from TiO2 and supports the charge transport in S-scheme. Thanks to this, the TiO2/CQDs/CdIn2S4 presents outstanding photoactivity in converting the polycyclic aromatic hydrocarbons (PAHs) released by cigarette to value-added benzaldehyde. The optimized photocatalyst performs 87.79% conversion rate and 72.76% selectivity in 1 h reaction under a simulated solar source, as confirmed by FT-IR and GC-MS. A combination of experiments and theoretical calculations are conducted to demonstrate the role of CQDs in TiO2/CQDs/CdIn2S4 toward photocatalysis.

On the same micro-LED display panel, LED pixels are always operated with high and low biased voltages simultaneously to show different brightness and colors. Thus, it is vitally important to understand the effect of the heat transmission between LEDs under high and low biased voltages. In this work, we design two different LED groups: Group A is two LEDs bonded together for heat transmission and Group B is two LEDs separated from each other. Then, the two LEDs are operated at one fixed and one tuned biased voltage respectively in each group in a vacuum chamber and the efficiency of the two groups is studied both experimentally and numerically. Here, our experimental results demonstrate that Group A exhibits a maximum improvement of 15.36% in optical output power compared with Group B. The underlying reason is that the wall-plug efficiency of the LED with a voltage lower than photon voltage (V < ℏω/q) is surprisingly enhanced by elevated temperature owing to the heat transmission by the LED under a high biased voltage in Group A. Our further study shows that in such a low voltage region the improvement in the efficiency is attributed to the enhanced carrier concentrations with elevated temperature. On the other hand, the LED in Group A under a high biased voltage further raises the overall efficiency by alleviating the thermal droop due to reduced temperature. Device temperature measurement and numerical calculation of radiative recombination under different temperatures further support the superior performance of Group A LEDs. Our research results can act as the research prototype to design the high-efficient LED arrays for better energy recycling and thermal control.

Flexible electronic devices have received great attention in the fields of foldable electronic devices, wearable electronic devices, displays, actuators, synaptic bionics and so on. Among them, high-performance flexible memory for information storage and processing is an important part. Due to its simple structure and non-volatile characteristics, flexible resistive random access memory (RRAM) is the most likely flexible memory to achieve full commercialization. At present, the minimum bending radius of flexible RRAM can reach 2 mm and the maximum ON/OFF ratio (storage window) can reach 108. However, there are some defects in reliability and durability. In the bending process, the cracks are the main cause of device failure. The charge trap sites provided by appropriate doping or the use of amorphous nanostructures can make the conductive filaments of flexible RRAM steadier. Flexible electrodes with high conductivity and flexible dielectric with stable storage properties are the main development directions of flexible RRAM materials in the future.

The recent technological trends toward miniaturization in lighting and display devices are accelerating the requirement for high-performance and small-scale GaN-based light-emitting diodes (LEDs). In this work, the effect of mesa size-reduction in the InGaN/GaN LEDs is systematically investigated in two lateral dimensions (x- and y-directions: parallel to and perpendicular to the line where p-n directions are) both experimentally and numerically. The role of the lateral size-reduction in the x- and y-directions in improving LED performance is separately identified through experimental and modeling investigations. The narrowed dimension in the x-direction is found to cause and dominate the alleviated current crowding phenomenon, while the size-reduction in the y-direction has a minor influence on that. The size-reduction in the y-orientation induces an increased ratio of perimeter-to-area in miniaturized LED devices, which leads to improved thermal dissipation and light extraction through the sidewalls. The grown and fabricated LED devices with varied dimensions further support this explanation. Then the effect of size-reduction on the LED performance is summarized. Moreover, three-micro-walls LED architecture is proposed and demonstrated to further promote light extraction and reduce the generation of the Joule heat. The findings in this work provide instructive guidelines and insights on device miniaturization, especially for micro-LED devices.

Recently, tin oxide (SnO2) has been the preferred thin film material for semiconductor devices such as thin-film transistors (TFTs) due to its low cost, non-toxicity, and superior electrical performance. However, the high oxygen vacancy (VO) concentration leads to poor performance of SnO2 thin films and devices. In this paper, with tetraethyl orthosilicate (TEOS) as the Si source, which can decompose to release heat and supply energy when annealing, Si doped SnO2 (STO) films and inverted staggered STO TFTs were successfully fabricated by a solution method. An XPS analysis showed that Si doping can effectively inhibit the formation of VO, thus reducing the carrier concentration and improving the quality of SnO2 films. In addition, the heat released from TEOS can modestly lower the preparation temperature of STO films. By optimizing the annealing temperature and Si doping content, 350 °C annealed STO TFTs with 5 at.% Si exhibited the best device performance: Ioff was as low as 10−10 A, Ion/Ioff reached a magnitude of 104, and Von was 1.51 V. Utilizing TEOS as an Si source has a certain reference significance for solution-processed metal oxide thin films in the future.

For making full use of the discoloration function of electrochromic (EC) devices and better show the charge and discharge states of supercapacitors (SCs), electrochromic supercapacitors (ECSCs) have attracted much attention and expectations in recent years. The research progress of tungsten-oxide-based electrochromic supercapacitors (ECSCs) in recent years is reviewed in this paper. Nanostructured tungsten oxide is widely used to facilitate ion implantation/extraction and increase the porosity of the electrode. The low-dimensional nanostructured tungsten oxide was compared in four respects: material scale, electrode life, coloring efficiency, and specific capacitance. Due to the mechanics and ductility of nano-tungsten oxide electrodes, they are very suitable for the preparation of flexible ECSCs. With the application of an organic protective layer and metal nanowire conductive electrode, the device has higher coloring efficiency and a lower activation voltage. Finally, this paper indicates that in the future, WO3-based ECSCs will develop in the direction of self-supporting power supply to meet the needs of use.

Magnetic multilayer with large perpendicular magnetic anisotropy (PMA) has attracted sustained interest owing to its importance to fundamental physics and applications. In this work, the high quality of Pt/Co/Pt heterostructures with large PMA was successfully achieved to exhibit a large anomalous Hall effect (AHE) with squared Hall loops. By calculating the proportional relationship between the longitudinal resistivity (ρxx) and the abnormal Hall coefficient (Rs), it is confirmed that the basic mechanism of AHE comes from the external skew scattering (SS) and side jump (SJ), while SS contribution, related to asymmetric scattering from impurities, is dominant in the AHE. Furthermore, the obvious magneto-optical Kerr effect (MOKE) was also observed using the polar MOKE microscopy. The obviously circular magnetic domain can form and propagate in response to the applied out-of-plane magnetic field, resulting in the magnetization reversal of the entire film. This work offers important information in terms of both AHE and MOKE in the ultrathin ferromagnetic films with perpendicular anisotropy, establishing the application foundation for the nonvolatile memories and spintronics.

As consumers pursue higher display quality, Mini-LED backlight technology has become the focus of research in the current display field. With its size advantage (100–200 μm), it can achieve one-thousand-level divisional dimming, and it can also be combined with quantum dot technology to greatly improve the contrast, color gamut, dark state and other element of the display performance of LCD displays. Mini-LED backlight technology is undoubtedly the most ideal solution to realize a highly dynamic range display of LCD displays, and has been widely commercialized in many fields such as TVs, tablet computers, notebook computers, and car monitors. This review mainly introduces the efforts made by researchers to eliminate the halo effect, thinning of the backlight module and reducing the backlight power consumption. The application of quantum dot technology in backlight is also presented. We predict that the number of Mini-LED backlight partitions is expected to reach a level of more than 3000 in the future, further utilizing the advantages of the small size in local dimming, but it will also inevitably be challenged by some issues such as power consumption and heat dissipation.

Flexible and fully transparent thin film transistors (TFT) were fabricated via room temperature processes. The fabricated TFT on the PEN exhibited excellent performance, including a saturation mobility (μsat) of 7.9 cm2/V·s, an Ion/Ioff ratio of 4.58 × 106, a subthreshold swing (SS) of 0.248 V/dec, a transparency of 87.8% at 550 nm, as well as relatively good stability under negative bias stress (NBS) and bending stress, which shows great potential in smart, portable flexible display, and wearable device applications.

Silver nanowire (AgNW) conductive film fabricated by solution processing was investigated as an alternative to indium tin oxide (ITO) in flexible transparent electrodes. In this paper, we studied a facile and effective method by electrodepositing Al2O3 on the surface of AgNWs. As a result, flexible transparent electrodes with improved stability could be obtained by electrodepositing Al2O3. It was found that, as the annealing temperature rises, the Al2O3 coating layer can be transformed from Al2O3·H2O into a denser amorphous state at 150 °C. By studying the increase of electrodeposition temperature, it was observed that the transmittance of the AgNW–Al2O3 composite films first rose to the maximum at 70 °C and then decreased. With the increase of the electrodeposition time, the figure of merit (FoM) of the composite films increased and reached the maximum when the time was 40 s. Through optimizing the experimental parameters, a high-stability AgNW flexible transparent electrode using polyimide (PI) as a substrate was prepared without sacrificing optical and electrical performance by electrodepositing at −1.1 V and 70 °C for 40 s with 0.1 mol/L Al(NO3)3 as the electrolyte, which can withstand a high temperature of 250 °C or 250,000 bending cycles with a bending radius of 4 mm.

Optical detection is of great significance in various fields such as industry, military, and medical treatment, especially ultraviolet (UV) photodetectors. Moreover, as the demand for wearable devices continues to increase, the UV photodetector, which is one of the most important sensors, has put forward higher requirements for bending resistance, durability, and transparency. Tin oxide (SnO2) has a wide band gap, high ultraviolet exciton gain, etc., and is considered to be an ideal material for preparing UV photodetectors. At present, SnO2-based UV photodetectors have a transparency of more than 70% in the visible light region and also have excellent flexibility of 160% tensile strain. Focusing on SnO2 nanostructures, the article mainly summarizes the progress of SnO2 UV photodetectors in flexibility and transparency in recent years and proposes feasible optimization directions and difficulties.

Polycyclic aromatic hydrocarbons (PAHs) in tobacco tar are regarded as a significant threat to human health. PAHs are formed due to the incomplete combustion of organics in tobacco and cigarette paper. Herein, for the first time, we extended the application of CsPbBr3 quantum dots (CsPbBr3) to the photocatalytic degradation of tobacco tar, which was collected from used cigarette filters. To optimize the photoactivity, CsPbBr3 was coupled with Bi2WO6 for the construction of a type-II photocatalyst. The photocatalytic performance of the CsPbBr3/Bi2WO6 composite was evaluated by the degradation rate of PAHs from tobacco tar under simulated solar irradiation. The results revealed that CsPbBr3/Bi2WO6 possesses a large specific surface area, outstanding absorption ability, good light absorption and rapid charge separation. As a result, in addition to good stability, the composite photocatalyst performed remarkably well in degrading PAHs (over 96% were removed in 50 mins of irradiation by AM 1.5 G). This study sheds light on promising novel applications of halide perovskite.

The praseodymium-doped indium-zinc-oxide (PrIZO) thin film transistor (TFT) shows broad application prospects in the new generation of display technologies due to its high performance and high stability. However, traditional device performance evaluation methods need to be carried out after the end of the entire preparation process, which leads to the high-performance device preparation process that takes a lot of time and costs. Therefore, there is a lack of effective methods to optimize the device preparation process. In this paper, the effect of sputtering oxygen partial pressure on the properties of PrIZO thin film was studied, and the quality of PrIZO thin film was quickly evaluated by the microwave photoconductivity decay (µ-PCD) method. The μ-PCD results show that as the oxygen partial pressure increases, the peak first increases and then decreases, while the D value shows the opposite trend. The quality of PrIZO thin film prepared under 10% oxygen partial pressure is optimal due to its low localized defect states. The electric performance of PrIZO TFTs prepared under different oxygen partial pressures is consistent with the μ-PCD results. The optimal PrIZO TFT prepared under 10% oxygen partial pressure exhibits good electric performance with a threshold voltage (Vth) of 1.9 V, a mobility (µsat) of 24.4 cm2·V−1·s−1, an Ion/Ioff ratio of 2.03 × 107, and a subthreshold swing (SS) of 0.14 V·dec−1.

Currently, inkjet printing conductive films have attracted more and more attention in the field of electronic device. Here, the inkjet-printed silver thin films based on nanoparticles (NP) ink and metal-organic decomposition (MOD) ink were cured by the UV curing method and heat curing method. We not only compared the electrical resistivity and adhesion strength of two types of silver films, but also studied the effect of different curing methods on silver films. The silver films based on NP ink had good adhesion strength with a lowest electrical resistivity of 3.7 × 10−8 Ω·m. However, the silver film based on MOD ink had terrible adhesion strength with a lowest electrical resistivity of 2 × 10−8 Ω·m. Furthermore, we found a simple way to improve the terrible adhesion strength of silver films based on MOD ink and tried to figure out the mechanisms. This work offers a further understanding of the different performances of two types of silver films with different curing methods.

In recent years, impurity-doped nanocrystal light-emitting diodes (LEDs) have aroused both academic and industrial interest since they are highly promising to satisfy the increasing demand of display, lighting, and signaling technologies. Compared with undoped counterparts, impurity-doped nanocrystal LEDs have been demonstrated to possess many extraordinary characteristics including enhanced efficiency, increased luminance, reduced voltage, and prolonged stability. In this review, recent state-of-the-art concepts to achieve high-performance impurity-doped nanocrystal LEDs are summarized. Firstly, the fundamental concepts of impurity-doped nanocrystal LEDs are presented. Then, the strategies to enhance the performance of impurity-doped nanocrystal LEDs via both material design and device engineering are introduced. In particular, the emergence of three types of impurity-doped nanocrystal LEDs is comprehensively highlighted, namely impurity-doped colloidal quantum dot LEDs, impurity-doped perovskite LEDs, and impurity-doped colloidal quantum well LEDs. At last, the challenges and the opportunities to further improve the performance of impurity-doped nanocrystal LEDs are described.

Recently, all-inorganic perovskite light-emitting diodes (PeLEDs) have attracted both academic and industrial interest thanks to their outstanding properties, such as high efficiency, bright luminance, excellent color purity, low cost and potentially good operational stability. Apart from the design and treatment of all-inorganic emitters, the device engineering is another significant factor to guarantee the high performance. In this review, we have summarized the state-of-the-art concepts for device engineering in all-inorganic PeLEDs, where the charge injection, transport, balance and leakage play a critical role in the performance. First, we have described the fundamental concepts of all-inorganic PeLEDs. Then, we have introduced the enhancement of device engineering in all-inorganic PeLEDs. Particularly, we have comprehensively highlighted the emergence of all-inorganic PeLEDs, strategies to improve the hole injection, approaches to enhance the electron injection, schemes to increase the charge balance and methods to decrease the charge leakage. Finally, we have clarified the issues and ways to further enhance the performance of all-inorganic PeLEDs.

Recently, exciplexes have been actively investigated in white organic light-emitting diodes (WOLEDs), since they can be effectively functioned as (i) fluorescent or thermally activated delayed fluorescent (TADF) emitters; (ii) the hosts of fluorescent, phosphorescent and TADF dopants. By virtue of the unique advantages of exciplexes, high-performance exciplex-based WOLEDs can be achieved. In this invited review, we have firstly described fundamental concepts of exciplexes and their use in organic light-emitting diodes (OLEDs). Then, we have concluded the primary strategies to develop exciplex-based WOLEDs. Specifically, we have emphasized the representative WOLEDs using exciplex emitters or hosts. In the end, we have given an outlook for the future development of exciplex-based WOLEDs.

For the first time, compounds with lanthanum from the main family element Boron (LaBx) were investigated as an active layer for thin-film transistors (TFTs). Detailed studies showed that the room-temperature fabricated LaBx thin film was in the crystalline state with a relatively narrow optical band gap of 2.28 eV. The atom ration of La/B was related to the working pressure during the sputtering process and the atom ration of La/B increased with the increase of the working pressure, which will result in the freer electrons in the LaBx thin film. LaBx-TFT without any intentionally annealing steps exhibited a saturation mobility of 0.44 cm2·V−1·s−1, which is a subthreshold swing (SS) of 0.26 V/decade and a Ion/Ioff ratio larger than 104. The room-temperature process is attractive for its compatibility with almost all kinds of flexible substrates and the LaBx semiconductor may be a new choice for the channel materials in TFTs.

Recently, thermally activated delayed fluorescence (TADF) organic light-emitting diodes (OLEDs) have attracted both academic and industrial interest due to their extraordinary characteristics, such as high efficiency, low driving voltage, bright luminance, lower power consumption and potentially long lifetime. In this invited review, the fundamental concepts of TADF have been firstly introduced. Then, main approaches to realize WOLEDs based on TADF have been summarized. More specifically, the recent development of WOLEDs based on all TADF emitters, WOLEDs based on TADF and conventional fluorescence emitters, hybrid WOLEDs based on blue TADF and phosphorescence emitters and WOLEDs based on TADF exciplex host and phosphorescence dopants is highlighted. In particular, design strategies, device structures, working mechanisms and electroluminescent processes of the representative WOLEDs based on TADF are reviewed. Finally, challenges and opportunities for further enhancement of the performance of WOLEDs based on TADF are presented.