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Digital light processing (DLP) has emerged as a highly promising 3D printing technology, which is due to its ability to fabricate components and structures with low cost and high precision. The DLP is, therefore, applicable in a wide range of fields. The phenomenon of light-scattering plays a dominant role in the DLP manufacturing process, but the specific impact of ceramic particles on the distribution of incident light remains unclear. The present study has, therefore, focused on studying the effect of ceramic particles on light-scattering by performing extensive theoretical finite element simulations. The aim was then to improve the curing quality of the DLP 3D printing process. More specifically, spherically shaped particles with a uniform distribution, lower duty ratios, or materials with lower refractive indices were necessary conditions for enhancing the printing precision due to the mitigated lateral light scattering effects. The overall results of this study have provided valuable guidance for the control of the light-induced curing in the 3D printing process of ceramics, thereby facilitating advancements in ceramic-based fabrication techniques. [ABSTRACT FROM AUTHOR]

In this study, we have fabricated a 368 nm LED with an epitaxial Indium Tin Oxide (ITO) contact layer. We analyze the thermal performance of the flip-chip LED with a symmetric electrode and metal reflective layer, applying ANSYS to build a coupled electro-thermal finite element model (FEM) of the temperature distribution in the multiple quantum wells (MQWs). We compare our system with the traditional Au-bump flip-chip LED and a flip-chip LED with a Distributed Bragg Reflector (DBR) layer. The simulation results have shown that the flip-chip LED with a metal reflective layer and symmetric electrode exhibits better heat dissipation performance, particularly at high input power. The influence of the insulating layer on the LED chip junction temperature is also examined. The simulation data establish an effect due to the thermal conductivity of the insulating layer in terms of heat dissipation, but this effect is negligible at an insulation layer thickness ≤1 µm. [ABSTRACT FROM AUTHOR]

Guided growth of silicon nanowires (SiNWs) into precise locations, via an in-plane solid–liquid–solid (IPSLS) mechanism, is a key basis for scalable integration of SiNW-based electronics, but an effective n-type doping has not yet been accomplished. In this work, we report a bismuth (Bi) catalyzed and doped growth of IPSLS SiNWs, where the incorporation of Bi atoms gives rise to efficient n-type doping, as confirmed by electron dispersion analysis and transfer properties of SiNW transistors. Interestingly, a rich geometry evolution is observed during the Bi-catalyzed planar growth, which evolves from discrete islands to continuous island chains and to uniform segments, prior to a final droplet collapsing/flattening at the end. A growth model has been established to address this peculiar phenomenon, emphasizing the impact of surface/interface tensions on the stability of the leading catalyst droplet. These results provide a solid basis for the construction of more advanced complementary SiNW logics and electronics. [ABSTRACT FROM AUTHOR]

Despite the fundamental difference in material systems and temporal evolution, self-oscillating growth of silicon nanowires (SiNWs), led by metal droplets, resembles very much natural river meanders in terms of their sinuosity, fractal dimensions, and scaling law. Both of them are driven by the release of higher potential energy stored in the disorder hydrogenated amorphous Si (a-Si:H) matrix or at highlands, tailored by a streamwise flow mechanism and subject to an erodible boundary constraint imposed by the a-Si:H thin film or the soil banks, respectively. Under specific conditions, the cross-droplet/stream velocity difference can be magnified, during the in-plane growth of SiNWs, to stimulate regular swaggering dynamics that produce continuous and smooth SiNW meanders. This interesting phenomenon indicates a rather simple and highly efficient strategy to shape complex elastic channels with only a few control parameters. A kinetic model has been established to explain the underlying mechanism of the self-oscillating meandering growth, which has unique potential to transform rigid SiNW channels into elastic forms for flexible or stretchable electronic applications. [ABSTRACT FROM AUTHOR]