1. Gate-controlled superconducting switch in GaSe/NbSe$_2$ van der Waals heterostructure
- Author
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Ding, Yifan, Hu, Chenyazhi, Li, Wenhui, Chen, Lan, He, Jiadian, Zhang, Yiwen, Zeng, Xiaohui, Wang, Yanjiang, Dong, Peng, Wang, Jinghui, Zhou, Xiang, Wu, Yueshen, Chen, Yulin, and Li, Jun
- Subjects
Condensed Matter - Superconductivity ,Physics - Applied Physics - Abstract
The demand for low-power devices is on the rise as semiconductor engineering approaches the quantum limit and quantum computing continues to advance. Two-dimensional (2D) superconductors, thanks to their rich physical properties, hold significant promise for both fundamental physics and potential applications in superconducting integrated circuits and quantum computation. Here, we report a gate-controlled superconducting switch in GaSe/NbSe$_2$ van der Waals (vdW) heterostructure. By injecting high-energy electrons into NbSe$_2$ under an electric field, a non-equilibrium state is induced, resulting in significant modulation of the superconducting properties. Owing to the intrinsic polarization of ferroelectric GaSe, a much steeper subthreshold slope and asymmetric modulation are achieved, which is beneficial to the device performance. Based on these results, a superconducting switch is realized that can reversibly and controllably switch between the superconducting and normal state under an electric field. Our findings highlight a significant high-energy injection effect from band engineering in 2D vdW heterostructures combining superconductors and ferroelectric semiconductors, and demonstrate the potential applications for superconducting integrated circuits., Comment: 19 pages, 5 figures
- Published
- 2024