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8. P‐1.15: Improving the Performance of IZO Transistor by Adding Buffer Layer.

9. P‐1.14: Effects of Active Layer Thickness on Performance of InZnO Transistors.

10. P‐1.12: Sub‐200nm Nano‐scale Indium‐Zinc‐Oxide Ultra‐thin Channel Transistors.

11. P‐1.11: Back‐End‐of‐Line Compatible Al‐doped Indium Zinc Oxide Transistors with Excellent Thermal Stability.

25. Themis is indispensable for IL-2 and IL-15 signaling in T cells

42. P‐1.11: High‐mobility ZnO thin‐film transistors with HfO2/Al2O3 bilayer dielectric.

48. P‐1.11: High‐mobility ZnO thin‐film transistors with HfO2/Al2O3bilayer dielectric

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