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2. Echo state graph neural networks with analogue random resistor arrays

6. Hardware Implementation of Next Generation Reservoir Computing with RRAM‐Based Hybrid Digital‐Analog System.

7. Lifetime Improvement of 28 nm Resistive Random Access Memory Chip by Machine Learning‐Assisted Prediction Model Collaborated with Resurrection Algorithm

8. Point-of-Care Testing (POCT) System based on self-Recovery Memoristor Chip with Low Energy Consuption(1.547 TOPS/W) and High Recognition (1142 fram/s)

9. Investigation on the 3D Memristor Array Architecture for 3D Reservoir Computing System Implementation

11. A 40-nm SONOS Digital CIM Using Simplified LUT Multiplier and Continuous Sample-Hold Sense Amplifier for AI Edge Inference

14. Simulation of a Fully Digital Computing-in-Memory for Non-Volatile Memory for Artificial Intelligence Edge Applications.

17. Few-shot graph learning with robust and energy-efficient memory-augmented graph neural network (MAGNN) based on homogeneous computing-in-memory

18. 3D Reservoir Computing with High Area Efficiency (5.12 TOPS/mm2) Implemented by 3D Dynamic Memristor Array for Temporal Signal Processing

19. First Demonstration of High-Sensitivity (NEP<1fW•Hz-1/2) Back-Illuminated Active-Matrix Deep UV Image Sensor by Monolithic Integration of Ga2O3 Photodetectors and Oxide Thin-Film-Transistors

24. A 128kb Stochastic Computing Chip based on RRAM Flicker Noise with High Noise Density and Nearly Zero Autocorrelation on 28-nm CMOS Platform

31. Ultra‐High Performance Amorphous Ga2O3 Photodetector Arrays for Solar‐Blind Imaging.

33. Memory Switching and Threshold Switching in a 3D Nanoscaled NbOX System

34. Composition-Dependent Ferroelectric Properties in Sputtered HfXZr1−XO2 Thin Films

37. Classification of Three-Level Random Telegraph Noise and Its Application in Accurate Extraction of Trap Profiles in Oxide-Based Resistive Switching Memory

38. Unveiling the Switching Mechanism of a TaOx/HfO2 Self-Selective Cell by Probing the Trap Profiles With RTN Measurements

40. Switching and Failure Mechanism of Self-Selective Cell in 3D VRRAM by RTN-Based Defect Tracking Technique

43. BEOL Based RRAM with one extra-mask for low cost, highly reliable embedded application in 28 nm node and beyond

45. Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by Ta2O5/TaOx Bi-Layer Structure.

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