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1. Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode

Author

Atse Julien Eric N’Dohi, Camille Sonneville, Soufiane Saidi, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Yvon Cordier, Luong Viet Phung, Frédéric Morancho, Hassan Maher, and Dominique Planson

Subjects
cathodo-luminescence, micro-Raman spectroscopy, current-voltage I-V, GaN Schottky diodes, power electronic devices, Crystallography, QD901-999
Abstract

In this work, the physical and the electrical properties of vertical GaN Schottky diodes were investigated. Cathodo-luminescence (CL), micro-Raman spectroscopy, SIMS, and current-voltage (I-V) measurements were performed to better understand the effects of physical parameters, for example structural defects and doping level inhomogeneity, on the diode electrical performances. Evidence of dislocations in the diode epilayer was spotted thanks to the CL measurements. Then, using 2D mappings of the E2h and A1 (LO) Raman modes, dislocations and other peculiar structural defects were observed. The I-V measurements of the diodes revealed a significant increase in the leakage current with applied reverse bias up to 200 V. The combination of physical and electrical characterization methods indicated that the electrical leakage in the reverse biased diodes seems more correlated with short range non-uniformities of the effective doping than with strain fluctuation induced by dislocations.

Published
2023
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2. Micro-Raman characterization of homo-epitaxial n doped GaN layers for vertical device applications

Author

Atse Julien Eric N’Dohi, Camille Sonneville, Luong Viet Phung, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Hassan Maher, Josiane Tasselli, Karine Isoird, Frédéric Morancho, Yvon Cordier, and Dominique Planson

Subjects
Physics, QC1-999
Abstract

N-doped homo-epitaxial GaN samples grown on freestanding GaN substrates have been investigated by micro-Raman spectroscopy. Quantitative analysis of the E2h and the A1(LO) modes’ behavior has been performed while intentionally increasing the carrier density using silicon doping. We noticed that as the carrier concentration increases up to 1.8 × 1018 cm−3, the E2h mode remains unchanged. On the other hand, when the doping gets higher, the A1(LO) position shifts to a higher frequency range, its width becomes larger, and its intensity drastically diminishes. This change in the A1(LO) behavior is due to its interaction and its coupling with the free negative charge carriers. Furthermore, we calibrated the A1(LO) frequency position shift as a function of the n-carrier concentration. We found out that for low n doping, the change in the A1(LO) position can be considered as a linear variation while in the overall doping range, a sigmoid growth trend with a Boltzmann fit can be tentatively applied to describe the A1(LO) position shift. This calibration curve can also be used to describe the coupling strength between the carriers and the A1(LO) phonon. Eventually, this study shows that micro-Raman spectroscopy is a powerful non-destructive tool to probe the doping concentration and the crystalline quality of GaN material with a microscopic spatial resolution.

Published
2022
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3. Deep Level Transient Fourier Spectroscopy Investigation of Electron Traps on AlGaN/GaN-on-Si Power Diodes

Author

Florian Rigaud-Minet, Christophe Raynaud, Julien Buckley, Matthew Charles, Patricia Pimenta-Barros, Romain Gwoziecki, Charlotte Gillot, Véronique Sousa, Hervé Morel, and Dominique Planson

Subjects
power electronics, wide bandgap, gallium nitride, DLTS, reactive ion etching, traps, Technology
Abstract

Many kinds of defects are present in AlGaN/GaN-on-Si based power electronics devices. Their identification is the first step to understand and improve device performance. Electron traps are investigated in AlGaN/GaN-on-Si power diodes using deep level transient Fourier spectroscopy (DLTFS) at different bias conditions for two Schottky contact’s etching recipes. This study reveals seven different traps corresponding to point defects. Their energy level ET ranged from 0.4 eV to 0.57 eV below the conduction band. Among them, two new traps are reported and are etching-related: D3 (ET = 0.47–0.48 eV; σ ≈ 10−15 cm2) and D7 (ET = 0.57 eV; σ = 4.45 × 10−12 cm2). The possible origin of the other traps are discussed with respect to the GaN literature. They are proposed to be related to carbon and nitrogen vacancies or to carbon, such as CN-CGa. Some others are likely due to crystal surface recombination, native defects or a related complex, or to the nitrogen antisite: NGa.

Published
2023
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4. Capacitance Temperature Dependence Analysis of GaN-on-Si Power Transistors

Author

Florian Rigaud-Minet, Julien Buckley, William Vandendaele, Matthew Charles, Marie-Anne Jaud, Elise Rémont, Hervé Morel, Dominique Planson, Romain Gwoziecki, Charlotte Gillot, and Véronique Sousa

Subjects
power electronics, wide bandgap, gallium nitride, capacitance, traps, TCAD, Technology
Abstract

Many kinds of defects are present in the different layers of GaN-on-Si epitaxy. Their study is very important, especially because they play a significant role on the device characteristics. This paper investigates the cause of the temperature dependence of the output and Miller capacitance at three temperatures: 25 °C, 75 °C and 150 °C of GaN-on-Si power transistors. In particular, this study focuses on the temperature dependence of the depletion voltage seen in these characteristics due to the progressive depletion of the two-dimensional electron gas (2DEG) under the device field plates. First, variations of the epitaxial growth are studied, showing that the intrinsic carbon concentration does not play a significant role. Secondly, the deep acceptor trap origin of the temperature dependence is analyzed with a TCAD simulation study. Thirdly, by adjusting TCAD parameters and binding them with experimental concentrations to fit experimental data, trap properties were obtained. The comparison of these properties with the acceptor traps in the literature suggests that the origin is a gallium vacancy tied to oxygen atom(s) on the N site.

Published
2022
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10. Design and Methodology of Silicon Carbide High Voltage Termination Extension for Small Area BJTs

Author

Ali Ammar, Luong Viêt Phung, Dominique Planson, Hervé Morel, and Camille Sonneville

Subjects
Mechanics of Materials, Mechanical Engineering, General Materials Science, Condensed Matter Physics
Abstract

An optimized termination extension tutorial is reported for a small area (≈ 1mm2 ) 4H-SiC NPN BJT. The extension system is based on a parametric JTE with isolation rings. Additional aspects such as (1) MESA angle, (2) relieving electric field on the base-drift junction, and (3) blocking the electric field from reaching border structure are investigated. A breakdown voltage greater than 10 kV is recorded, when drift region is n-doped to 8x1014 cm-3.

Published
2022

11. Electrical Behavior of Vertical Pt/Au Schottky Diodes on GaN Homoepitaxy

Author

Maroun Dagher, Camille Sonneville, Georges Brémond, Dominique Planson, Eric Frayssinet, Yvon Cordier, Helge Haas, Mohammed Reda Iretki, Julien Buckley, Vishwajeet Maurya, Matthew Charles, Jean-Marie Bluet, Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Ampère, Département Energie Electrique (EE), Ampère (AMPERE), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), INL - Matériaux Fonctionnels et Nanostructures (INL - MFN), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and GaNeX Labex

Subjects
[PHYS]Physics [physics], Materials Chemistry, Surfaces and Interfaces, Electrical and Electronic Engineering, Condensed Matter Physics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials
Abstract

International audience; Schottky barrier diodes on GaN on GaN substrates are fabricated for the purposeof material and technology characterization. The epitaxial layers are grown byMOCVD. I–V measurements as a function of the temperature in the range80–480 K show ideality factor (n) and barrier height (ϕB) variations not following athermionic (TE) model. Consequently, barrier height fluctuations are considered.In the temperature range 280–480 K, an average barrier height of 1.31 eV with arelatively large standard deviation (σ) of 0.15 eV is extracted using this model. Then(T ) variation is also analyzed in order to extract the field sensibility of 1) themean barrier height variation (ρ2 = -0.1) and 2) the barrier height standarddeviation (ρ3 = -15mV). The corrected Richardson plot usingϕB and σ values islinear and gives a Richardson constant of 31.5 A cm² K² close to the theoreticalvalue of 26.4 A cm² K². For a deeper understanding of ϕB fluctuation origins,micro-Raman mapping of the epitaxial layers and deep-level transient spectroscopy(DLTS) are used. μ-RS mappings show compressive strain for diodeshaving suffered electrical breakdown. DLTS analysis shows the presence of ninelevels whose signatures are extracted and nature discussed.

Published
2023

12. Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT

Author

Ali Ammar, Mihai Lazar, Bertr Vergne, Sigo Scharnholz, Luong Viet Phung, Camille Sonneville, Christophe Raynaud, Herve Morel, Dominique Planson, Marcin Zielinski, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Lumière, nanomatériaux et nanotechnologies (L2n), Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS), Institut franco-allemand de recherches de Saint-Louis (ISL), DGA-Matériaux et Nanosciences Grand-Est (MNGE), Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), NOVASIC, NOVASiC, and ANR-18-CE05-0020,HV-PhotoSw,Interrupteurs à haute tension à commande optique(2018)

Subjects
I-V characteristics, blocking voltage, 4H-SiC BJT, TCAD modeling, Bipolar Devices, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience; In this article, a high power 4H-SiC NPN BJT is demonstrated with a blocking voltage greater than 10 kV when its theoretical value is around 13 kV. The device design was extracted from a previous reported model and a fabrication process with eleven mask levels was performed. The maximum recorded common-emitter current gain is 20 at a current density 178 A/cm 2 .

Published
2022

13. Static and Switching Characteristics of 10 kV-Class Silicon Carbide Bipolar Junction Transistors and Darlingtons

Author

Luong Viet Phung, Michel Mermet-Guyennet, Hervé Morel, Pascal Bevilacqua, Besar Asllani, Dominique Planson, Thomas Lagier, and Beverley Choucoutou

Subjects
010302 applied physics, Class (computer programming), Materials science, business.industry, Mechanical Engineering, 020208 electrical & electronic engineering, Transistor, 02 engineering and technology, Condensed Matter Physics, 01 natural sciences, 7. Clean energy, law.invention, chemistry.chemical_compound, chemistry, Mechanics of Materials, law, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Silicon carbide, Optoelectronics, General Materials Science, business
Abstract

This paper reports the device design, fabrication and characterisation of 10 kV-class Bipolar Junction Transistor (BJT). Manufactured devices have been packaged in single BJT, two paralleled BJTs and Darlington configurations. The static and switching characteristics of the resulting devices have been measured. The BJTs (2.4mm² active area) show a specific on-resistance as low as 198 mΩ·cm² at 100 A/cm² and room temperature for a βMax of 9.6, whereas the same active area Darlington beats the unipolar limit with a specific on-resistance of 102 mΩ·cm² at 200 A/cm² (β=11) for a βMax of 69. Double pulse tests reveal state of the art switching with very sharp dV/dt and di/dt. Turn-on is operated at less than 100 ns for an EON lower than 4mJ, whereas the turn-off takes longer times due to tail current resulting in EOFF of 17.2 mJ and 50 mJ for the single BJT and Darlington respectively when operated at high current density. Excellent parallelisation have been achieved.

Published
2020

15. Enhanced Resonant Raman scattering of GaN functional layers using Al thin films -a versatile tool for multilayer structure analysis

Author

Alina Muravitskaya, Anna Rumyantseva, Atse Julien Eric Ndohi, Camille Sonneville, Dominique Planson, Pierre Michel Adam, Sylvain Potiron, Mihai Lazar, Lumière, nanomatériaux et nanotechnologies (L2n), Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Recherche en Nanosciences - EA 4682 (LRN), Université de Reims Champagne-Ardenne (URCA)-SFR CAP Santé (Champagne-Ardenne Picardie Santé), Université de Reims Champagne-Ardenne (URCA)-Université de Reims Champagne-Ardenne (URCA)-SFR Condorcet, Université de Reims Champagne-Ardenne (URCA)-Centre National de la Recherche Scientifique (CNRS)-Université de Reims Champagne-Ardenne (URCA)-Centre National de la Recherche Scientifique (CNRS), Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), ANR-18-EURE-0013,NANO-PHOT,Graduate School in Nano-optics and Nanophotonics(2018), Université de Technologie de Troyes (UTT), Université de Reims Champagne-Ardenne (URCA)-Université de Picardie Jules Verne (UPJV)-Université de Reims Champagne-Ardenne (URCA)-Université de Picardie Jules Verne (UPJV)-SFR Condorcet, Université de Reims Champagne-Ardenne (URCA)-Université de Picardie Jules Verne (UPJV)-Centre National de la Recherche Scientifique (CNRS)-Université de Reims Champagne-Ardenne (URCA)-Université de Picardie Jules Verne (UPJV)-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), and Planson, Dominique

Subjects
SiC, Raman scattering, thin layers, SERS, Mechanical Engineering, [SPI.NRJ]Engineering Sciences [physics]/Electric power, power device, Condensed Matter Physics, GaN, plasmonic nanoparticles, [SPI]Engineering Sciences [physics], Mechanics of Materials, nanostructures, General Materials Science, ComputingMilieux_MISCELLANEOUS, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract

International audience; In order to selectively analyze active thin layers close to surface in power devices structures, Raman scattering is necessary with UV excitation. However, the Raman spectra of GaN are usually affected by the direct bandgap photoluminescence of the material, which interferes with the Raman measurements and decreases the quality and resolution of the Raman spectra. In this work, we demonstrate experimentally that nanostructured aluminum films deposed on GaN epitaxial layers decrease the influence of the photoluminescence on the resonant Raman spectra and increase its overall spatial resolution under UV illumination.

Published
2021

16. 4H-SiC PiN diode protected by narrow field rings investigated by the micro-OBIC method

Author

Dominique Planson, Camille Sonneville, Pascal Bevilacqua, Luong Viêt Phung, Besar Asllani, Dominique Tournier, Pierre Brosselard, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), CALY Technologies, and Planson, Dominique

Subjects
OBIC, Mechanics of Materials, Mechanical Engineering, high voltage device, 4H-SiC bipolar diode, [SPI.NRJ]Engineering Sciences [physics]/Electric power, electro-physical characterisation, General Materials Science, periphery protection, Condensed Matter Physics, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract

International audience; This paper presents micro-OBIC measurements performed at different voltages on two devices protected by narrow field rings. At the surface of the device #1, a polyimide layer was deposited during the fabrication process. On the contrary, passivation layer was removed on device #2. Thanks to the micro-OBIC micrometer spatial resolution and the spot size was carefully focused, small gaps in the range of 1 μm can be visible on OBIC profiles. Thus, the variation of the μ-obic accurately reflects the topology of each ring.

Published
2021

17. Edge terminations for 4H-SiC power devices: a critical issue

Author

Philippe Godignon, Josep Montserrat, José Rebollo, Dominique Planson, Planson, Dominique, Instituto de Microelectrònica de Barcelona (IMB-CNM), Centro Nacional de Microelectronica [Spain] (CNM)-Consejo Superior de Investigaciones Científicas [Madrid] (CSIC), Centro de Investigación Biomédica en Red en Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN), Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)

Subjects
OBIC, Mechanics of Materials, Mechanical Engineering, edge termination, [SPI.NRJ]Engineering Sciences [physics]/Electric power, JTE, General Materials Science, Condensed Matter Physics, breakdown voltage, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract

Edge termination is a critical part of a power devices. Numerous edge termination types have been developed for silicon devices. Implementation of these termination architectures are not straightforward in SiC due to physical and processing specificities: lower junction depths, higher electric field, trench depth and shaping limitations, etc. Two main families of terminations are currently used in commercial devices, pure Field Guard Rings, and JTE + Rings combination. The increasing number of trench commercial devices requires new approaches based on etched rings filled with dielectrics or polysilicon. For epitaxied bipolar devices, MESA with bevel angle termination combined with JTE based architecture are also suitable. In any case, and especially regarding avalanche capability requirements, not only the termination architecture is relevant, but also the passivation type, the channel stopper design, the 3D design. As modelling using conventional tools is not fully reliable, specific complementary characterization methods are needed. For instance, micro-OBIC can be very effective to determine the electric field distribution in the periphery of the power devices.

Published
2021

18. Investigation of SiC thyristors with varying amplifying gate design

Author

Sigo Scharnholz, Ralf Hassdorf, Dirk Bauersfeld, Bertrand Vergne, Luong Viêt Phung, Dominique Planson, Planson, Dominique, Institut franco-allemand de recherches de Saint-Louis (ISL), DGA-Matériaux et nanosciences d'Alsace (FMNGE), Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS), Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), DGA-Matériaux et Nanosciences Grand-Est (MNGE), and Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI] Engineering Sciences [physics], Mechanical Engineering, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Etched JTE, Condensed Matter Physics, Thyristor, [SPI]Engineering Sciences [physics], Device fabrication, Mechanics of Materials, Amplifying gate, Turn-on characteristic, Onstate characteristic, General Materials Science, ComputingMilieux_MISCELLANEOUS, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract

This paper presents experimental 1.2 kV, 10 A SiC thyristors with different amplifying gate design. In contrast to comparative devices (with simple gate) the amplifying gate thyristors show a characteristic snap-back and a higher gate current to trigger. Their gate-anode I-V characteristics comply with the underlying design constraint, regarding the resistances of pilot and main thyristor: (RP > RM). Moreover, the turn-on waveforms of well-designed amplifying gate thyristors reveal peak-shaped inversions in the gate current and voltage transients, providing clear evidence of the successive triggering of pilot and main thyristor.

Published
2021

19. Switching Loss Estimation Using a Validated Model of 650 V GaN HEMTs

Author

Joao Oliveira, Dominique Planson, Florent Loiselay, Hervé Morel, Institut VEDECOM, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)

Subjects
Measure (data warehouse), Computer science, Automotive application, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Electronic engineering, Measuring instrument, Hardware_INTEGRATEDCIRCUITS, Power semiconductor device, Switching losses, Device characterisation, Converters, Gallium Nitride (GaN), Power (physics)
Abstract

International audience; GaN power devices allow building more compact power converters. In order to study these new devices, it is important to measure and estimate switching losses. Therefore, an instrumented PCB is developed including the measurement points needed for this purpose. The parasitic elements of the PCB layout extracted by ANSYS Q3D and the models of the measurement instruments are also included in the simulation model. In this way, by means of a validated model, it will be possible to evaluate the losses in an optimized circuit. Simulation and experimental results are presented to validate the simulation approach.

Published
2020

20. Near Breakdown Voltage Optical Beam Induced Current (OBIC) on 4H-SiC Bipolar Diode

Author

Marie Laure Locatelli, Pascal Bevilacqua, Luong Viet Phung, Roxana Arvinte, Besar Asllani, Dominique Planson, Hassan Hamad, Christophe Raynaud, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Matériaux Diélectriques dans la Conversion d’Energie (LAPLACE-MDCE), LAboratoire PLasma et Conversion d'Energie (LAPLACE), Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées, Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse III - Paul Sabatier (UT3), and Planson, Dominique

Subjects
OBIC, 4H-SiC, Materials science, Optical beam-induced current, 02 engineering and technology, Electroluminescence, 01 natural sciences, high voltage device, Electric field, 0103 physical sciences, Breakdown voltage, General Materials Science, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Diode, 010302 applied physics, business.industry, Mechanical Engineering, [SPI.NRJ]Engineering Sciences [physics]/Electric power, TCAD simulation, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Overcurrent, Mechanics of Materials, Bipolar diode, Optoelectronics, 0210 nano-technology, business, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract

This paper presents OBIC measurements performed at near breakdown voltage on two devices with different JTE doses. Overcurrent has been measured either at the JTE periphery or at the P+ border. Such overcurrent is present due to the electric field enhancement near the breakdown voltage. This hypothesis is proved by the electroluminescence. TCAD simulation of two different JTE doses yielded similar results to the OBIC measurements.

Published
2018

21. Silicon Carbide and Related Materials 2021

Author

Jean François Michaud, Luong Viêt Phung, Daniel Alquier, Dominique Planson, Jean François Michaud, Luong Viêt Phung, Daniel Alquier, and Dominique Planson

Subjects
Silicon carbide--Congresses, Silicon carbide--Electric properties--Congresses
Abstract

Selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020-2021)

Published
2022

22. Realization and Characterization of Carbonic Layers on 4H-SiC for Electrochemical Detections

Author

François Buret, C. Raynaud, Naoufel Haddour, Dominique Planson, Julien Pezard, Mihai Lazar, Veronique Soulière, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Laboratoire des Multimatériaux et Interfaces (LMI), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Ampère, Département Bioingénierie (BioIng), and Planson, Dominique

Subjects
Materials science, Nanotechnology, 02 engineering and technology, Photoresist, 01 natural sciences, Reference electrode, law.invention, law, General Materials Science, ComputingMilieux_MISCELLANEOUS, Detection limit, [CHIM.MATE] Chemical Sciences/Material chemistry, Graphene, Mechanical Engineering, graphene, [SPI.NRJ]Engineering Sciences [physics]/Electric power, 010401 analytical chemistry, electrochemical sensors, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 0104 chemical sciences, Characterization (materials science), Linear range, Mechanics of Materials, Electrode, PPF, carbonic layers, 0210 nano-technology, BDD, Biosensor, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract

International audience; Carbon materials are considered building blocks for most of electrochemical sensors. Their biocompatibility allows their use as transducers for biosensors. Furthermore, they can be patterned, giving interest in all-inclusive bioelectrochemical detection devices. In particular, graphene, boron doped diamond, and pyrolyzed photoresist films are suitable for this kind of application, which would give the ability to use these working electrodes within a fully designed apparatus completed by counter and reference electrode. In this paper, a pioneer work is exposed on the synthesis of these materials for use as electrochemical sensors and as transducers for biodetection of acetylcholine by adsorption of acetylthiocholinesterase. The lowest limit of detection reaches 6.98 μM, sensitivity 5.91 μA/mM, and a linear range from 6.98 μM to 0.55 mM.

Published
2017

23. Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p++ Emitters

Author

Mihai Lazar, C. Raynaud, L. Lalouat, Christian Brylinski, François Jomard, Davy Carole, Selsabil Sejil, Dominique Planson, and Gabriel Ferro

Subjects
010302 applied physics, Materials science, Passivation, business.industry, Mechanical Engineering, Doping, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, 01 natural sciences, Mechanics of Materials, 0103 physical sciences, Electronic engineering, Optoelectronics, General Materials Science, Electrical measurements, 0210 nano-technology, business, p–n junction, Current density, Ohmic contact
Abstract

This study deals with the electrical characterization of PiN diodes fabricated on a 4°off-axis 4H-SiC n+ substrate with a n- epilayer (1×1016 cm-3 / 10 µm). Optimized p++ epitaxial areas were grown by Vapour-Liquid-Solid (VLS) transport to form p+ emitters localized in etched wells with 1 µm depth. Incorporated Al level in the VLS p++ zones was checked by SIMS (Secondary Ion Mass Spectroscopy), and the doping level was found in the range of 1-3×1020 at.cm-3. Electrical characterizations were performed on these PiN diodes, with 800 nm deposit of aluminium as ohmic contact on p-type SiC. Electrical measurements show a bipolar behaviour, and very high sustainable forward current densities ≥ 3 kA.cm-2, preserving a low leakage current density in reverse bias. These measurements were obtained on structures without any passivation and no edge termination.

Published
2017

24. Simulation-Based Study About the Lifetime and Incident Light Properties Dependence of the Optically Triggered 4H-SiC Thyristors Operation

Author

Hasegawa Junichi, Loris Pace, Luong Viet Phung, Dominique Planson, Mutsuko Hatano, Tokyo Institute of Technology [Tokyo] (TITECH), Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)

Subjects
Materials science, 02 engineering and technology, Photon energy, 7. Clean energy, 01 natural sciences, Optics, 0103 physical sciences, minimum intensity, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Penetration depth, wavelength dependence, 010302 applied physics, business.industry, simulation model, optically triggered thyristor, Thyristor, 021001 nanoscience & nanotechnology, Ray, Electronic, Optical and Magnetic Materials, Wavelength, optical triggered thyristor, Optoelectronics, Quantum efficiency, 0210 nano-technology, business, Intensity (heat transfer), Voltage
Abstract

International audience; We investigated a methodology to design light-triggered thyristors thanks to TCAD. The simulation model accuracy, especially the holding current and the minimum incident light intensity to turn-ON, were compared with experimental results. The influence of SiC epitaxial layer lifetime and the incident light properties (wavelength and intensity) on the optically triggered 4H-SiC thyristor characteristics have been studied by simulation. We considered the wavelength dependence of quantum efficiency, penetration depth, and photon energy. The holding current and turn-ON time depends on the lifetime. The minimum intensity to turn-ON the device significantly depends on the wavelength. This intensity becomes less than 0.003 times when the wavelength changed from 380 to 325 nm. In addition, the breakover voltage is affected by the constant incident light even if the intensity is tiny.

Published
2017

25. Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors

Author

Luong-Viet Phung, Dominique Planson, Besar Asllani, Hassan Hamad, Christophe Raynaud, Pascal Bevilacqua, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)

Subjects
Materials science, Optical beam-induced current, Gallium nitride, 02 engineering and technology, 01 natural sciences, chemistry.chemical_compound, 0103 physical sciences, Silicon carbide, General Materials Science, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, power devices, Silicon Carbide, business.industry, Mechanical Engineering, Wide-bandgap semiconductor, Schottky diode, High voltage, Semiconductor device, Carrier lifetime, 021001 nanoscience & nanotechnology, Condensed Matter Physics, optical device characterization, Gallium Nitride, chemistry, Mechanics of Materials, Optoelectronics, Diamond, 0210 nano-technology, business
Abstract

International audience; Power electronic devices based on wide bandgap (WBG) semiconductors such as silicon carbide (SiC), gallium nitride (GaN) and diamond (C) offer better performances when compared to those based on silicon (Si). However, the peripheral protection of these devices must be carefully designed to sustain high voltage bias. This paper shows how the OBIC (Optical Beam Induced Current) technique applied to WBG semiconductor devices could be useful to study the efficiency of different protection techniques. Firstly, a theoretical approach is given to present the this electro-optical characterization method. Then, it is performed on high voltage power devices in a vacuum chamber allowing to study the spatial distribution of the electric field in the semiconductor. In addition, comparisons with Finite Elements Methods using TCAD tools are performed showing the local high electric field strength. Results are mainly focused on SiC devices for the sake of availability. This paper shows additional results and measurements on GaN and diamond Schottky diodes also. Finally, extraction of OBIC signals allows to know some physical features like ionization coefficients, minority carrier lifetime and local defects in semiconductors as shown in the last section.

Published
2019

26. VTH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate

Author

Alberto Castellazzi, Oriol Avino Salvado, Dominique Planson, Herve Morel, Besar Asllani, and Asad Fayyaz

Subjects
010302 applied physics, Materials science, Interface (computing), Charge (physics), 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Capacitance, Engineering physics, Hysteresis, Planar, Reliability (semiconductor), 0103 physical sciences, Trench, Power MOSFET, 0210 nano-technology
Abstract

This paper contributes to investigations on the threshold-voltage $(V_{TH})$ hysteresis in SiC power MOSFETs. Such effect is of relevance mainly for sub-threshold operation of the devices, but needs to be told apart from stress-related $V_{TH-}$ drift phenomena for technology maturity and reliability validation goals. Important differences exist in commercially available devices, particularly in relation to their gate technology, planar or trench, the latter also showing a marked temperature dependence of the hysteretic range. Based on the experimental characterization of the interface capacitance and charge, this paper puts forward a methodology for determining the types of traps affecting the various devices, with the aim of contributing a tool to assist driving of technological maturity in future generation devices. This paper also shows the potential of capacitance hysteresis measurement to the estimation of the distribution of interface.

Published
2019

27. Advanced Electrical characterisation of high voltage 4H-SiC PiN diodes

Author

Dominique Planson, Jean Baptiste Fonder, Pascal Bevilacqua, Hervé Morel, Luong Viet Phung, Beverley Choucoutou, Besar Asllani, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), CALY Technologies, SuperGrid Institute SAS, SuperGrid Institute, and Planson, Dominique

Subjects
device robustness, Materials science, high current stress, device processing, 02 engineering and technology, 01 natural sciences, law.invention, Stress (mechanics), law, high voltage device, 0103 physical sciences, Breakdown voltage, General Materials Science, High current, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Diode, 010302 applied physics, double-pulse test, business.industry, Mechanical Engineering, [SPI.NRJ]Engineering Sciences [physics]/Electric power, PIN diode, High voltage, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Mechanics of Materials, 4H-SiC bipolar diode, Optoelectronics, 0210 nano-technology, business, Degradation (telecommunications), [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract

This paper reports the design, the processing, the static characterisation, the switching behaviour and the high current stress test of 10 kV aimed 4H-SiC bipolar diodes. The actual breakdown voltage of the selected devices is between 7 kV and 8 kV. The switching characterisations show a good behaviour with a trr of only 90 ns. No degradation was observed after the application of 10 000 high current pulses during the stress tests.

Published
2019

28. Measure and analysis of 4H-SiC Schottky barrier height with Mo contacts

Author

Dominique Planson, Christophe Raynaud, Teng Zhang, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)

Subjects
010302 applied physics, Materials science, Deep-level transient spectroscopy, Condensed matter physics, Schottky barrier, Schottky diode, Thermionic emission, Context (language use), 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Standard deviation, Electronic, Optical and Magnetic Materials, [SPI.TRON]Engineering Sciences [physics]/Electronics, 0103 physical sciences, 0210 nano-technology, Instrumentation, Voltage, Diode
Abstract

Current–voltage (I–V) and capacitance–voltage (C–V) characteristics of Schottky Mo/4H-SiC diodes have been measured and analyzed as a function of temperature between 80 and 400 K. The I–V characteristics significantly deviate from ideal characteristics predicted by the thermionic emission model because of the inhomogeneity of Schottky contact. After a brief review of the different existing models, the main parameters (ideality factor, barrier height, and effective Richardson constant) of both diodes have been extracted in the frame of a Gaussian barrier height distribution model, whose mean and standard deviation are linearly dependent on voltage and temperature, as well as in the context of the potential fluctuation model. The results are compared with the values extracted by C–V and the values in the literature. A link is established between these two models. Diodes of different I–V characteristics, either identified as single barrier or double barrier, have been analyzed by Deep Level Transient Spectroscopy (DLTS) to investigate the deep level defects present. No noticeable difference has been found.

Published
2019

29. Interest of using a micro-meter spatial resolution to study SiC semi-conductor devices by Optical Beam Induced Current (OBIC)

Author

Camille Sonneville, Dominique Planson, Luong Viet Phung, Pascal Bevilacqua, Besar Asllani, Planson, Dominique, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), and SuperGrid Institute SAS

Subjects
Materials science, Optical beam-induced current, Field (physics), Silicon Carbide High Voltage Diodes, 02 engineering and technology, 01 natural sciences, law.invention, Depletion region, law, Electric field, 0103 physical sciences, General Materials Science, Image resolution, 010302 applied physics, Wide Band Gap semi- conductor, TCAD, business.industry, Mechanical Engineering, [SPI.NRJ]Engineering Sciences [physics]/Electric power, PIN diode, High voltage, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Semiconductor, Mechanics of Materials, Optoelectronics, OBIC characterization, 0210 nano-technology, business, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract

International audience; UV Laser can be used to generate electron-hole pairs into Wide Band-Gap (WBG) semiconductors. In the space charge region, the electric field drives the collected carriers and a current, so-called Optical Beam induced Current (OBIC), can be measured. The induced current is directly related to the electrical field in the device. The OBIC, is a non-destructive characterization technique, which has been previously successfully used to characterize High Voltage (HV) SiC devices [1,2,3,4]. In order to fully benefit of the advantages provided by SiC and to avoid premature breakdown of the high voltage devices, it is mandatory to have efficient peripheral protections such as MESA and/or JTE. The OBIC characterization can help the technology computer-aided design (TCAD) and the device process to optimize the efficiency of the periphery protection by analyzing the electric field distribution in the structure and especially at the junction periphery. In this talk, we will present an in-house testbench called micro-OBIC which will allow us to characterize SiC high voltage (HV) PiN diodes (10 kV class) with a micro-meter spatial resolution.

Published
2019

30. L'hysteresis de la tension de seuil des MOSFET SiC de puissance et son impact sur le fonctionnement en régime de court-circuit

Author

Hervé Morel, Besar Asllani, Alberto Castellazzi, Asad Fayyaz, Dominique Planson, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Power Electronics Machines and Control (PEMC) Group, University of Nottingham, UK (UON), and IEEE

Subjects
010302 applied physics, Materials science, reliability, V TH Hysteresis, Subthreshold conduction, VTH instabillities, 020208 electrical & electronic engineering, 02 engineering and technology, V TH instabillities, 01 natural sciences, Engineering physics, Threshold voltage, Hysteresis, Reliability (semiconductor), Short Circuit, 0103 physical sciences, MOSFET, 0202 electrical engineering, electronic engineering, information engineering, SiC MOSFET, Power semiconductor device, Power MOSFET, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Short circuit, VTH Hysteresis
Abstract

International audience; V TH subthreshold hysteresis is an aspect of MOSFET’s threshold instabilities that is gaining interests in last few years. As a matter of fact, reliability concerns are raised due to the fluctuation of the threshold voltage depending on the previous bias state. The subthreshold drain current, also called drain leakage current, is enhanced after a negative gate bias is applied to put the device in OFF-state. This phenomenon affects the static characteristics and might also change the dynamic behaviour of the devices, but such measurements have not yet been reported. This study reports the impact of the Hysteresis on the Short Circuit behaviour of a commercially available SiC MOSFET. A physical interpretation of the measurement is given in order to provide the fundamentals necessary for the evaluation of the reliability of these power devices.

Published
2018

31. A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti3SiC2Phase

Author

Tony Abi-Tannous, Dominique Planson, Olivier Dezellus, Maher Soueidan, Jean-Francois Barbot, Gabriel Ferro, Christophe Raynaud, Marie-France Beaufort, Bérangère Toury, M. Lazar, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Laboratoire des Multimatériaux et Interfaces (LMI), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut Pprime (PPRIME), and Université de Poitiers-ENSMA-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Annealing (metallurgy), Analytical chemistry, 02 engineering and technology, 01 natural sciences, chemistry.chemical_compound, silicon carbide, 0103 physical sciences, Silicon carbide, Ti3SiC2, Electrical and Electronic Engineering, Thin film, Ti-Al alloy, Ohmic contact, 010302 applied physics, Metallurgy, Contact resistance, Sputter deposition, 021001 nanoscience & nanotechnology, Microstructure, [SPI.TRON]Engineering Sciences [physics]/Electronics, Electronic, Optical and Magnetic Materials, chemistry, Transmission electron microscopy, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 0210 nano-technology
Abstract

International audience; In this paper, the electrical properties of Ti3SiC2-based ohmic contacts formed on p-type 4H-SiC were studied. The growth of Ti3SiC2 thin films were studied onto 4H-SiC substrates by thermal annealing of Ti-Al layers deposited by magnetron sputtering. In this study, we varied the concentrations of Ti and Al (Ti20Al80, Ti30Al70, Ti50Al50, and Ti), and the annealing temperature from 900 °C to 1200 °C for each concentration. X-ray diffraction and transmission electron microscopy analyzes were performed on the samples to determine the microstructure of the annealed layers and to further investigate the compounds formed after annealing. Using the transfer length method structures, the specific contact resistance (SCR) at room temperature of all contacts was measured. The temperature dependence up to 600 °C of the SCR of the best contacts was studied to understand the current mechanisms at the Ti3SiC2/SiC interface. The experimental results are in agreement with the thermionic field emission theory. With this model, the barrier height of the contact varies between 0.71 and 0.85 eV. Finally, ageing tests showed that Ti3SiC2-based contacts were stable and reliable up to 400 h at 600 °C under Ar.

Published
2016

32. Thermally Stable Ohmic Contact to p-Type 4H-SiC Based on Ti3SiC2 Phase

Author

Christophe Raynaud, Gabriel Ferro, Bruno Gardiola, Maher Soueidan, Mihai Lazar, Dominique Planson, and Tony Abi-Tannous

Subjects
010302 applied physics, Materials science, Annealing (metallurgy), Mechanical Engineering, Contact resistance, 02 engineering and technology, Sputter deposition, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Thermionic field emission, 01 natural sciences, Mechanics of Materials, 0103 physical sciences, Electronic engineering, General Materials Science, Thin film, Composite material, 0210 nano-technology, Ohmic contact
Abstract

In this study, the electrical properties of Ti3SiC2 based ohmic contacts formed on p-type 4H-SiC(0001) 4°-off substrates were studied. The Ti3SiC2 thin films were grown by thermal annealing (from 900°C to 1200°C) of Ti50Al50 layer deposited by magnetron sputtering. XRD analyzes were performed on the samples to further investigate the compounds formed after annealing. Using TLM structures, the Specific Contact Resistance (SCR) at room temperature of all contacts was measured. The temperature dependence (up to 600°C) of the SCR was studied to understand the current mechanisms at the interface and to determine the barrier height value by fitting the experimental results using the thermionic field emission theory. Aging tests showed that Ti3SiC2 based contacts were stable up to 200h at 600°C under Ar.

Published
2016

33. Study and Optimization of a 600V Pseudo-Vertical GaN-on-Silicon Rectifier by Finite Element Simulations

Author

Arnaud Yvon, Nicolas Thierry-Jebali, Amira Souguir-Aouani, Emmanuel Collard, Dominique Planson, Dominique Tournier, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), and STMicroelectronics [Tours] (ST-TOURS)

Subjects
Work (thermodynamics), Materials science, GaN rectifier, GaN on Silicon, 02 engineering and technology, 01 natural sciences, Finite Element Simulation, Silicon-controlled rectifier, 0103 physical sciences, Electronic engineering, Breakdown voltage, General Materials Science, Gallium Nitride - GaN, 010302 applied physics, Rectifiers, business.industry, Mechanical Engineering, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Doping, Schottky diode, Order (ring theory), 021001 nanoscience & nanotechnology, Condensed Matter Physics, Finite element method, Mechanics of Materials, Optoelectronics, 0210 nano-technology, business, Layer (electronics)
Abstract

This work presents the impact analysis of physical and geometrical parameters on the on-resistance and the breakdown voltage in order to optimize a 600 V pseudo-vertical GaN/Si Schottky rectifier. The results by finite element simulations indicate that the most influent parameter on the resistance is the thickness of the n+ layer. Regarding reverse specifications, simulations show that a good efficiency of the “Mesa + Guard Ring” is achieved for a guard ring doping concentration higher than Na=5×1017 cm-3.

Published
2016

34. 10 kV Silicon Carbide PiN Diodes—From Design to Packaged Component Characterization

Author

Dominique Planson, Hervé Morel, Luong Viet Phung, Besar Asllani, SuperGrid Institute SAS, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)

Subjects
Control and Optimization, Fabrication, Materials science, electrical characterization, Orders of magnitude (temperature), device processing, MVDC, Energy Engineering and Power Technology, 02 engineering and technology, 7. Clean energy, 01 natural sciences, smartgrid, law.invention, chemistry.chemical_compound, law, 0103 physical sciences, Silicon carbide, Wafer, Electrical and Electronic Engineering, Engineering (miscellaneous), SiC 10 kV PiN diode, Diode, 010302 applied physics, double-pulse test, HVDC, Renewable Energy, Sustainability and the Environment, business.industry, [SPI.NRJ]Engineering Sciences [physics]/Electric power, PIN diode, Atmospheric temperature range, 021001 nanoscience & nanotechnology, chemistry, Optoelectronics, Wafer dicing, 0210 nano-technology, business, high-voltage device packaging, Energy (miscellaneous)
Abstract

This paper presents the design, fabrication and characterization results obtained on the last generation (third run) of SiC 10 kV PiN diodes from SuperGrid Institute. In forward bias, the 59 mm2 diodes were tested up to 100 A. These devices withstand voltages up to 12 kV on wafer (before dicing, packaging) and show a low forward voltage drop at 80 A. The influence of the temperature from 25 &deg, C to 125 &deg, C has been assessed and shows that resistivity modulation occurs in the whole temperature range. Leakage current at 3 kV increases with temperature, while being three orders of magnitude lower than those of equivalent Si diodes. Double-pulse switching tests reveal the 10 kV SiC PiN diode&rsquo, s outstanding performance. Turn-on dV/dt and di/dt are &minus, 32 V/ns and 311 A/&micro, s, respectively, whereas turn-off dV/dt and di/dt are 474 V/ns and &minus, 4.2 A/ns.

Published
2019

35. Surge Driven Evolution of Schottky Barrier Height on 4H-SiC JBS Diodes

Author

Jean Baptiste Fonder, Dominique Planson, Luong Viet Phung, Pierre Brosselard, Besar Asllani, Pascal Bevilacqua, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), CALY Technologies, Planson, Dominique, Ampère, Département Energie Electrique ( EE ), Ampère, École Centrale de Lyon ( ECL ), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 ( UCBL ), Université de Lyon-Institut National des Sciences Appliquées de Lyon ( INSA Lyon ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ) -École Centrale de Lyon ( ECL ), and Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS )

Subjects
Materials science, 4H-SiC, Schottky barrier, 02 engineering and technology, Barrier heigh evolution, 01 natural sciences, 0103 physical sciences, JBS, General Materials Science, Surge, Surge Cycling, Diode, 010302 applied physics, business.industry, Mechanical Engineering, [SPI.NRJ]Engineering Sciences [physics]/Electric power, 021001 nanoscience & nanotechnology, Condensed Matter Physics, [SPI.TRON]Engineering Sciences [physics]/Electronics, Mechanics of Materials, Optoelectronics, Contact annealing, [ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract

International audience; In this paper we will present the results of repetitive surge stress carried out on six 3.3 kV-5A Ti/Ni 4H-SiC JBS diodes. Repetitive current peaks between 10 A and 24 A have been applied and some diodes were able to endure 100,000 cycles while others failed before. The causes of failure have not been determined but a correlation between peak surge current and physical parameters evolution rate has been proven. Simulations show that contact temperature during surge can reach 300 °C, which is very close to Schottky contact annealing temperatures.

Published
2018

36. Silicon Carbide Technology of MESFET-Based Power Integrated Circuits

Author

Dominique Planson, Bruno Allard, Mihai Lazar, Christophe Raynaud, Jean-François Mogniotte, Dominique Tournier, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)

Subjects
Computer science, Energy Engineering and Power Technology, Topology (electrical circuits), 02 engineering and technology, Ring oscillator, Integrated circuit, Driver circuit, MESFET, 01 natural sciences, law.invention, law, silicon carbide, Power electronics, 0103 physical sciences, Electronic engineering, Electrical measurements, integrated power converter, Electrical and Electronic Engineering, Boost, 010302 applied physics, SPICE, [SPI.NRJ]Engineering Sciences [physics]/Electric power, integrated circuit, 021001 nanoscience & nanotechnology, Logic gate, 0210 nano-technology
Abstract

International audience; This paper presents the start development of a design kit for an innovative technology based on the same lateral topology and the same substrate, which is a dual-gate SiC MESFET. From the electrical characteristic of an initial dual-gate MESFETs, a SPICE model of this device has been established. This model allows developing by simulating a design kit of three devices, which are, respectively, a signal MESFET, a buffer MESFET, and a power MESFET. The signal MESFETs are dedicated to the signal command shaping. The buffer MESFETs would be used as current buffer in the driver circuit for supplying the gate electrode of the power switches. The power MESFETs would be used as power switches. The electrical measurements validate the feasibility of this technology. The characterizations have shown that the technology is operational, and the three devices present the considered electrical behavior. The contact resistance technology must be improved for optimizing the electrical performances. The devices will be used for the design of electronic functions (e.g., ring oscillator and totem pole) in the purpose to consider a full integrated driver in SiC, which could operate in harsh environments.

Published
2018

37. SiC lateral Schottky diode technology for integrated smart power converter

Author

Bruno Allard, Jean-François Mogniotte, Mihai Lazar, Dominique Planson, Christophe Raynaud, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)

Subjects
SiC, Materials science, 020209 energy, electrical characteristics, 02 engineering and technology, Integrated circuit, Hardware_PERFORMANCEANDRELIABILITY, law.invention, Rectifier, Smart power, chemistry.chemical_compound, law, 0202 electrical engineering, electronic engineering, information engineering, Silicon carbide, Hardware_INTEGRATEDCIRCUITS, power converter, Schottky diode, Hardware_ARITHMETICANDLOGICSTRUCTURES, Ampere, Diode, business.industry, 020208 electrical & electronic engineering, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Power (physics), chemistry, Optoelectronics, business, Hardware_LOGICDESIGN
Abstract

International audience; Ampere laboratory develops a technology of lateral power integrated circuit in Silicon Carbide (SiC). The purpose is to establish integrated power converter with its driver, which can operate in harsh environment. The technology is namely consisted by lateral MESFETs and lateral diodes. This paper presents two types of manufactured diodes: rectifier Schottky diode and power Schottky diode.

Published
2018

38. Multi-barrier height characterization and DLTS study on Ti/W 4H-SiC Schottky Diode

Author

Teng Zhang, Christophe Raynaud, Dominique Planson, Planson, Dominique, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)

Subjects
SiC, Materials science, Annealing (metallurgy), Schottky barrier, C-V, 02 engineering and technology, 01 natural sciences, I-V, stress, 0103 physical sciences, General Materials Science, Diode, 010302 applied physics, DLTS, business.industry, Mechanical Engineering, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Schottky diode, Schottky, 021001 nanoscience & nanotechnology, Condensed Matter Physics, [SPI.TRON] Engineering Sciences [physics]/Electronics, [SPI.TRON]Engineering Sciences [physics]/Electronics, multi barrier, Mechanics of Materials, Optoelectronics, annealing, 0210 nano-technology, business
Abstract

International audience; Schottky barrier height (SBH) has been characterized on 4H-SiC Schottky diodes with metal contact of Ti/W by Current-Voltage (I-V) and Capacitance-Voltage (C-V) measurements between 80 K and 400 K. Multi-barrier has been recognized and calculated according to different models. No clear difference has been found between single barrier diode and diode with multi-barrier from DLTS tests. Evolution on the I-V characteristics has been observed after high temperature annealing. The effect of annealing at room temperature (RT) and high temperature DLTS scan (stress under high temperature) have also been studied on both static characteristics and DLTS results.

Published
2018

39. High-Voltage SiC-JFET Fabrication and Full Characterization

Author

Hervé Morel, Gregory Grosset, Abderrahime Zaoui, Dominique Planson, Besar Asllani, Pascal Bevilacqua, Planson, Dominique, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Ion Beam Services, industriel, Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Ion Beam Services (IBS), and IBS

Subjects
device robustness, Fabrication, Materials science, device characterization, high current stress, device processing, 02 engineering and technology, 4H-SiC JFET, 01 natural sciences, Stress (mechanics), high voltage device, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Breakdown voltage, General Materials Science, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Diode, 010302 applied physics, double-pulse test, business.industry, Mechanical Engineering, [SPI.NRJ]Engineering Sciences [physics]/Electric power, 020208 electrical & electronic engineering, JFET, High voltage, Condensed Matter Physics, Characterization (materials science), double- pulse switching, Mechanics of Materials, 4H-SiC bipolar diode, Optoelectronics, business, Degradation (telecommunications), [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract

International audience; This paper reports the design, the processing, the static characterisation, the switching behaviour and the high current stress test of 10 kV aimed 4H-SiC bipolar diodes. The actual breakdown voltage of the selected devices is between 7 kV and 8 kV. The switching characterisations show a good behaviour with a t rr of only 90 ns. No degradation was observed after the application of 10 000 high current pulses during the stress tests.

Published
2018

40. Original Field Plate to Decrease the Maximum Electric Field Peak for High-Voltage Diamond Schottky Diode

Author

Dominique Planson, Saleem Hamady, Houssam Arbess, Moustafa Zerarka, Karine Isoird, Équipe Intégration de Systèmes de Gestion de l'Énergie (LAAS-ISGE), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), FUI DIAMONIX2, Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), and Université de Toulouse (UT)

Subjects
Materials science, Field (physics), junction termination, Field effect, 02 engineering and technology, Dielectric, engineering.material, 01 natural sciences, Electric field, 0103 physical sciences, Schottky diode, Breakdown voltage, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, Field plate architecture, 010302 applied physics, business.industry, Diamond, High voltage, TCAD simulation, 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, engineering, Optoelectronics, 0210 nano-technology, business
Abstract

International audience; Diamond is a promising material for future high voltage applications because of its high critical electric field. This property leads to new constraints on the used termination structure, especially in terms of electric field value. For this reason, new termination architectures based on field plate are proposed for diamond Schottky diodes. Using finite element simulations with Sentaurus TCAD (technology computer-aided design) software, a new field plate structure has been proposed. Simple variations in the classic field plate architecture were sufficient to increase the breakdown voltage from 1632 V to 2141 V at 700 K, but not to reduce the electric field value at the edges of field plate. Several termination topologies have been proposed to solve this problem. Parametric simulations were used to optimize the geometrical termination structure in order to reduce the electric field peak value at its edge while maintaining high breakdown voltage. The new solutions have helped reducing the maximum electric field from 57 MV/cm down to 22.7 MV/cm.

Published
2015

41. A Study on the Chemistry of Epitaxial Ti3SiC2 Formation on 4H-SiC Using Al-Ti Annealing

Author

Tony Abi-Tannous, Maher Soueidan, Gabriel Ferro, Mihai Lazar, Berangère Toury, Marie France Beaufort, Jean François Barbot, J. Penuelas, and Dominique Planson

Subjects
Materials science, Annealing (metallurgy), Mechanical Engineering, Contact resistance, Metallurgy, Analytical chemistry, Oxide, chemistry.chemical_element, Sputter deposition, Condensed Matter Physics, Epitaxy, Oxygen, chemistry.chemical_compound, chemistry, Mechanics of Materials, General Materials Science, Rapid thermal annealing, Ohmic contact
Abstract

In order to form Ti3SiC2 on 4H-SiC(0001) 8°-off, 200 nm of Ti30Al70 was deposited onto SiC substrates by magnetron sputtering from pure Ti30Al70 targets. The samples were then annealed at 1000°C for 10 min under Ar atmosphere in a Rapid Thermal Annealing (RTA) furnace. Structural analyses reveal the formation of epitaxial hexagonal Ti3SiC2 (0001) oriented. Elemental analyses show that high amount of Al and O elements are present inside the deposit. Obviously, the formation of Ti3SiC2 is accompanied by parasitic Al oxide, probably due to some unwanted oxygen residual in the RTA chamber. By using proper backing steps before the annealing, the deposit is not anymore composed of only Ti3SiC2 but accompanied with other compounds (Al3Ti, and Al). On the oxide-free sample, the specific contact resistance ρc of the Ti3SiC2 based contact on p-type 4H-SiC (having Na= 2×1019 cm-3) was measured to be as low as 6×10-5 Ω.cm2.

Published
2015

42. VLS Grown 4H-SiC Buried P+ Layers for JFET Lateral Structures

Author

Selsabil Sejil, Davy Carole, Dominique Planson, Mihai Lazar, Christian Brylinski, Hervé Morel, Farah Laariedh, Gabriel Ferro, and Christophe Raynaud

Subjects
Materials science, business.industry, Mechanical Engineering, Transistor, JFET, Condensed Matter Physics, Epitaxy, law.invention, Ion, Mechanics of Materials, law, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, General Materials Science, Wafer, business, Layer (electronics)
Abstract

Lateral JFET transistors have been fabricated with N and P-type channels tentatively integrated monolithically on the same SiC wafer. Buried P+SiC layers grown by Vapor-Liquid-Solid (VLS) selective epitaxy were utilized as source and drain for the P-JFET and as gate for the N-JFET. The ohmicity of the contacts, both on VLS grown P+and ion implanted N+layers, has been confirmed by Transfer Length Method (TLM) measurements. A premature leakage current is observed on the P/N junction created directly by the P+VLS gate layer, probably due to imperfect VLS (P+) / CVD (N+) SiC interface.

Published
2015

43. Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-Type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts

Author

Pierre Brosselard, Nicolas Thierry-Jebali, Sylvie Contreras, Mihai Lazar, Leszek Konczewicz, Anne Henry, Gabriel Ferro, Davy Carole, Christian Brylinski, Veronique Soulière, Arthur Vo-Ha, Dominique Planson, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Laboratoire des Multimatériaux et Interfaces (LMI), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Linköping University (LIU), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and ANR-08-BLAN-0191,VHVD-SiC,Very High Voltage Devices in Silicon Carbide: target 15kV(2008)

Subjects
Fabrication, Materials science, Epitaxy, p-type 4H-SiC, law.invention, law, Selective Epitaxial Growth, Electronic engineering, Vapor-Liquid-Solid, General Materials Science, Ohmic contact, ComputingMilieux_MISCELLANEOUS, Common emitter, business.industry, Mechanical Engineering, Doping, Contact resistance, PIN diode, Condensed Matter Physics, Acceptor, [SPI.TRON]Engineering Sciences [physics]/Electronics, PiN diode, Mechanics of Materials, Optoelectronics, business
Abstract

This work deals with two applications of the Selective Epitaxial Growth of highly p-type doped buried 4H-SiC in Vapor-Liquid-Solid configuration (SEG-VLS). The first application is the improvement of the Specific Contact Resistance (SCR) of contacts made on such p-type material. As a result of the extremely high doping level, SCR values as low as 1.3x10-6Ω.cm2have been demonstrated. Additionally, the high Al concentration of the SEG-VLS 4H-SiC material induces a lowering of the Al acceptor ionization energy down to 40 meV. The second application is the fabrication of PiN diodes with SEG-VLS emitter and guard-rings peripheral protection. Influence of some process parameters and crystal orientation on the forward and reverse characteristics of the PiN diodes is discussed.

Published
2014

44. Understanding the growth of p-doped 4H-SiC layers using vapour–liquid–solid transport

Author

Christian Brylinski, Dominique Planson, Dominique Tournier, François Cauwet, Mihai Lazar, Arthur Vo-Ha, Gabriel Ferro, Pierre Brosselard, Nicolas Thierry-Jebali, Davy Carole, V. Souliere, Laboratoire des Multimatériaux et Interfaces (LMI), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), and ANR-08-BLAN-0191,VHVD-SiC,Very High Voltage Devices in Silicon Carbide: target 15kV(2008)

Subjects
Materials science, Fabrication, chemistry.chemical_element, Nanotechnology, Silicon carbide, 02 engineering and technology, Substrate (electronics), Epitaxy, 01 natural sciences, chemistry.chemical_compound, 0103 physical sciences, Doping, Materials Chemistry, Deposition (phase transition), Growth rate, 010302 applied physics, Argon, 020502 materials, Metals and Alloys, Surfaces and Interfaces, [SPI.TRON]Engineering Sciences [physics]/Electronics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Semiconductors, 0205 materials engineering, chemistry, Chemical engineering, Selective epitaxial growth
Abstract

International audience; The present study reports the fabrication of localized p-doped silicon carbide zones on 4H-SiC substrate. Selective epitaxial growth of p-doped SiC was performed using the vapour–liquid–solid transport in Al–Si liquid phase. Focus was made on the understanding of the mechanism involved during such growth. It was shown that despite the need of starting the growth during the heating ramp, the deposition proceeds in a 2D manner at low temperature. Rather high growth rates were obtained (56.7–380 nm/min) which are related to the thinness of the liquid phase (< 3 μm). Argon carrier gas leads to an increase of growth rate compared to H2 due to the reducing effect of this latter gas. The results revealed that the surface morphology was more affected by the initial Si content of the liquid than by the growth rate. It is proposed that the Si content of the liquid is a very influent parameter because of its importance in the competition between SiC or Al4C3 stabilization.

Published
2013

45. Die attach using silver sintering. Practical implementation and analysis

Author

Wissam Sabbah, Cyril Buttay, Régis Meuret, Hervé Morel, Dominique Planson, Amandine Masson, Raphaël Riva, Stephane Azzopardi, Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Laboratoire de l'intégration, du matériau au système (IMS), Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université Sciences et Technologies - Bordeaux 1, SAFRAN, Grp Hispano Suiza, SAFRAN Group, FRAE projet EPAHT, and Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Materials science, power electronics packaging, silver sintering, [SPI.NRJ]Engineering Sciences [physics]/Electric power, 020208 electrical & electronic engineering, Metallurgy, dBc, Sintering, 02 engineering and technology, Substrate (printing), 01 natural sciences, Silver nanoparticle, Die (integrated circuit), high temperature, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Melting point, Electrical and Electronic Engineering, Silver particles
Abstract

National audience; Silver sintering is a promising alternative to high melting point (HMP) solders which contain lead. Indeed, it offers better thermal and electrical properties, and can operate at higher temperature. Currently, several implementations of this technique are available, based on various silver particles sizes and sintering additives. This paper presents a review of the different implementations, and gives practical details about one of them, based on silver nanoparticles. One specific aspect is highlighted: the metal finish of the DBC substrate. It has a major impact on the quality of the sintered joint: with some finishes, the adhesion is excellent (more than 50 MPa), while it is poor with some others (lower than 10 MPa).

Published
2013

46. Pulse Current Characterization of SiC GTO Thyristors with Etched JTE

Author

Dominique Planson, Bertrand Vergne, Sigo Scharnholz, Gontran Pâques, Ralf Hassdorf, Institut franco-allemand de recherches de Saint-Louis (ISL), DGA-Matériaux et nanosciences d'Alsace (FMNGE), Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS), Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)

Subjects
Materials science, 02 engineering and technology, Pulsed Power, Pulsed power, Thyristor, 01 natural sciences, 0103 physical sciences, Waveform, General Materials Science, Gate Turn-Off, 010302 applied physics, business.industry, Mechanical Engineering, Edge Termination, Electrical engineering, High voltage, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Junction Termination Extension (JTE), [SPI.TRON]Engineering Sciences [physics]/Electronics, Mechanics of Materials, Optoelectronics, Device under test, Current (fluid), 0210 nano-technology, business, GTO, Current density, AND gate
Abstract

In this paper we highlight our latest results on high voltage SiC thyristors comprising an etched JTE. Compared to our previous design concepts, the thyristors described here are larger in size and have been investigated regarding pulsed power applications. Quasi-static on-state characteristics show that the devices withstand a repetitive current load of up to 16 A corresponding to a current density of 825 A/cm2. Their switching behavior was evaluated up to 1000 V demonstrating characteristic waveforms at turn-on and gate turn-off. Moreover, pulsed current characteristics show that the typical device under test sustained a current pulse of 20 μs with a peak value of 200 A and 10 kA/cm2, respectively.

Published
2013

47. Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET

Author

Dominique Tournier, Gregory Grosset, Lionel Dupuy, Dominique Planson, Florian Chevalier, Pierre Brosselard, Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)

Subjects
Materials science, Junction Field Effect Transistor, 02 engineering and technology, Dual gate, 01 natural sciences, Thermal oxide, Vertical Channel, 0103 physical sciences, Electronic engineering, General Materials Science, High Voltage Device, 010302 applied physics, Vertical channel, business.industry, Mechanical Engineering, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Process (computing), JFET, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Characterization (materials science), Dual Gate JFET, Mechanics of Materials, Electrode, Lateral Channel, Optoelectronics, 0210 nano-technology, business
Abstract

International audience; This paper presents the methodology for the design of a novel 4H-SiC JFET structure able to sustain 3.3 kV. Comparisons between simulation and haracterization res will be made. Taken into account the process limitation, we will also discuss the critical steps and their impact on the electrical haracteristics. A design methodology based on Baliga's criterion is proposed to obtain the optimal structure. A 50 nm thick thermal oxide grown above vertical channel and the use of a buried p+ layer as second gate electrode are brand new in front of what is found in literature.

Published
2013

48. p-Doped SiC Growth on Diamond Substrate by VLS Transport

Author

Arthur Vo-Ha, François Cauwet, Dominique Tournier, Christian Brylinski, Davy Carole, M. Lazar, Gabriel Ferro, Dominique Planson, Veronique Soulière, Laboratoire des Multimatériaux et Interfaces (LMI), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)

Subjects
Materials science, Nucleation, Nanotechnology, 02 engineering and technology, Substrate (electronics), engineering.material, Epitaxy, 01 natural sciences, Silicon Carbide (SiC), 0103 physical sciences, General Materials Science, Vapor–liquid–solid method, Selective Epitaxy, 010302 applied physics, Precipitation (chemistry), Mechanical Engineering, Doping, p-Type Doping, Diamond, 021001 nanoscience & nanotechnology, Condensed Matter Physics, [SPI.TRON]Engineering Sciences [physics]/Electronics, Chemical engineering, Mechanics of Materials, VLS Growth, engineering, Crystallite, 0210 nano-technology
Abstract

International audience; This work deals with the study of the Selective Epitaxial Growth (SEG) of SiC using the Vapour-Liquid-Solid (VLS) transport on diamond (100) substrate with Al-Si as the liquid phase fed by propane. Morphology, structure and doping type of the SiC deposit were determined. Polycrystalline p-doped 3C-SiC was obtained during the growth. Study of the initial step of growth showed that SiC nucleation occurs without any propane addition but just through the interaction of liquid Al-Si and diamond via a dissolution/precipitation process. This explains the random nucleation and the polycrystalline growth. Despite this, preliminary electrical measurements show encouraging results.

Published
2013

49. Electrical Characterization of PiN Diodes with p+ Layer Selectively Grown by VLS Transport

Author

Dominique Planson, Farah Laariedh, Arthur Vo Ha, Jawad ul Hassan, Anne Henry, Erik Janzén, Christian Brylinski, Pierre Brosselard, Nicolas Thierry-Jebali, Veronique Soulière, Gabriel Ferro, Mihai Lazar, and Davy Carole

Subjects
010302 applied physics, Materials science, business.industry, Annealing (metallurgy), Mechanical Engineering, PIN diode, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, 01 natural sciences, law.invention, Mechanics of Materials, law, 0103 physical sciences, Optoelectronics, General Materials Science, 0210 nano-technology, business
Abstract

This paper deals with electrical characterization of PiN diodes fabricated on an 8° off-axis 4H-SiC with a p++localized epitaxial area grown by Vapour-Liquid-Solid (VLS) transport. It provides for the first time evidence that a high quality p-n junction can be achieved by using this technique followed by a High Temperature Annealing (HTA) process.

Published
2013

50. Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes

Author

Bertrand Vergne, Philippe Godignon, Duy Minh Nguyen, Luong Viet Phung, Dominique Planson, Maxime Berthou, Pierre Brosselard, Runhua Huang, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Centro Nacional de Microelectronica [Spain] (CNM), Institut franco-allemand de recherches de Saint-Louis (ISL), DGA-Matériaux et Nanosciences Grand-Est (MNGE), Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Planson, Dominique, Centre Nacional de Microelectrònica (CNM), Universitat Autònoma de Barcelona (UAB), DGA-Matériaux et nanosciences d'Alsace (FMNGE), Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS), and ANR-08-BLAN-0191,VHVD-SiC,Very High Voltage Devices in Silicon Carbide: target 15kV(2008)

Subjects
Breakdown Voltage, 4H-SiC, Materials science, Bend radius, Device Simulation, 02 engineering and technology, Edge (geometry), 01 natural sciences, Bipolar Diode, 0103 physical sciences, Breakdown voltage, MESA, General Materials Science, Device simulation, Diode, 010302 applied physics, business.industry, Mechanical Engineering, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Edge Termination, Electrical engineering, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Junction Termination Extension (JTE), [SPI.TRON]Engineering Sciences [physics]/Electronics, Mechanics of Materials, Optoelectronics, 0210 nano-technology, business, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract

International audience; 10 kV class 4H-SiC bipolar diodes have been fabricated. Two different edge terminations (Mesa/JTE or MESA/JTE with JTE rings) with two different junction bend radius have been designed and tested. Measurement results show that the inclusion of JTE rings improve the edge termination efficiency. The measurements indicate also a better reverse performance of diodes with larger bend radius.

Published
2013

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