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In spintronics and spin caloritronics, the understanding of spin angular momentum transfer across heavy metal/ferromagnetic insulator interfaces is of fundamental importance. There has been much controversy about the presence of magnetic proximity effects at such interfaces. Using element-selective x-ray and angle-resolved magnetotransport measurements, the authors present here a systematic study of Pt/Y${}_{3}$Fe${}_{5}$O${}_{12}$ heterostructures, with different order of the layer stacking resulting in different interface properties. They demonstrate that combined temperature-dependent x-ray and magnetotransport studies are essential to unambiguously confirm or exclude the presence of magnetic proximity effects.

Journal of physics / D Applied physics 53(37), 1-16 (2020). doi:10.1088/1361-6463/ab8fdc, X-ray resonant magnetic reflectivity (XRMR) is a powerful method to determine the optical, structural and magnetic depth profiles of a variety of thin film systems. Here, we investigate samples of different complexity all measured at the Pt $\mathrm{L}_3$ absorption edge to determine the optimal procedure for the analysis of the experimental XRMR curves, especially for nontrivial bi- and multilayer samples that include differently bonded Pt from layer to layer. The software tool ReMagX is used to fit these data and model the magnetooptic depth profiles based on a highly adaptable layer stack which is modified to be a more precise and physically consistent representation of the real multilayer system. Various fitting algorithms, iterative optimization approaches and a detailed analysis of the asymmetry ratio features as well as χ 2 (goodness of fit) landscapes are utilized to improve the agreement between measurements and simulations. We present a step-by-step analysis procedure tailored to the Pt thin film systems to take advantage of the excellent magnetic sensitivity and depth resolution of XRMR., Published by IOP Publ., Bristol

The magnetic proximity effect in top and bottom Pt layers induced by Co in Ta/Pt/Co/Pt multilayers has been studied by interface sensitive, element specific x-ray resonant magnetic reflectivity. The asymmetry ratio for circularly polarized x-rays of left and right helicity has been measured at the Pt $L_3$ absorption edge (11567 eV) with an in-plane magnetic field ($\pm158$ mT) to verify its magnetic origin. The proximity-induced magnetic moment in the bottom Pt layer decreases with the thickness of the Ta buffer layer. Grazing incidence x-ray diffraction has been carried out to show that the Ta buffer layer induces the growth of Pt(011) rather than Pt(111) which in turn reduces the induced moment. A detailed density functional theory study shows that an adjacent Co layer induces more magnetic moment in Pt(111) than in Pt(011). The manipulation of the magnetism in Pt by the insertion of a Ta buffer layer provides a new way of controlling the magnetic proximity effect which is of huge importance in spin-transport experiments across similar kind of interfaces., 7 pages, 9 figures

Antiferromagnetic materials as active components in spintronic devices promise insensitivity against external magnetic fields, the absence of own magnetic stray fields, and ultrafast dynamics at the picosecond time scale. Materials with certain crystal-symmetry show an intrinsic N\'eel-order spin-orbit torque that can efficiently switch the magnetic order of an antiferromagnet. The tetragonal variant of CuMnAs was shown to be electrically switchable by this intrinsic spin-orbit effect and its use in memory cells with memristive properties has been recently demonstrated for high-quality films grown with molecular beam epitaxy. Here, we demonstrate that the magnetic order of magnetron-sputtered CuMnAs films can also be manipulated by electrical current pulses. The switching efficiency and relaxation as a function of temperature, current density, and pulse width can be described by a thermal-activation model. Our findings demonstrate that CuMnAs can be fabricated with an industry-compatible deposition technique, which will accelerate the development cycle of devices based on this remarkable material., Comment: 6 + 4 pages, 4 + 4 figures (main + appendix)

Applied physics letters 118(8), 089901 (2021). doi:10.1063/5.0045052, Published by American Inst. of Physics, Melville, NY

MMM 2019, ; AIP Advances 10(1), 015154 (2020). doi:10.1063/1.5130031, In this work, we study the influence of the magnetic proximity effect (MPE) in Pt on the total magnetic moment of thin film trilayer systems consisting of the ferromagnet (FM) Co adjacent to the heavy metals (HMs) Pt and Ta. We investigate the trilayer systems HM1/FM/HM2 with different stacking order as well as a reference bilayer without any MPE. X-ray resonant magnetic reflectivity (XRMR) is a powerful tool to probe induced magnetism, especially when buried at interfaces in a multilayer. By using XRMR, we are able to obtain magnetic depth profiles of the structural, optical and magnetic parameters. By fitting the experimental data with a Gaussian-like magnetooptic profile taking the structural roughness at the interface into account, we can extract the magnetic moment of the spin-polarized layer. Comparing the obtained moments to the measured total moment of the sample, we can determine the impact of the MPE on the total magnetic moment of the system. Such information can be critical for analyzing spin transport experiments, including spin-orbit torque and spin Hall angle measurements, where the saturation magnetization Ms has to be taken into account. Therefore, by combining magnetization measurements and XRMR methods we were able to get a complete picture of the magnetic moment distribution in these trilayer systems containing spin-polarized Pt., Published by American Inst. of Physics, New York, NY

Current-induced switching via N\'eel spin-orbit torque in thin films of the antiferromagnet Mn${}_{2}$Au offers the prospect of a magnetic multilevel nonvolatile memory cell. The authors investigate this switching with experiments and modeling, explaining the strong dependence of the switching amplitude on current density and temperature. They also point out the importance of thermal assistance of the electrical current to the switching. The energy barrier to switching in Mn${}_{2}$Au is high enough to preserve a magnetic state for many years at room temperature, making this system suitable for real-world spintronic devices.

We investigated an out-of-plane exchange bias system that is based on the antiferromagnet MnN. Polycrystalline, highly textured film stacks of Ta / MnN / CoFeB / MgO / Ta were grown on SiO$_x$ by (reactive) magnetron sputtering and studied by x-ray diffraction and Kerr magnetometry. Nontrivial modifications of the exchange bias and the perpendicular magnetic anisotropy were observed both as functions of film thicknesses as well as field cooling temperatures. In optimized film stacks, a giant perpendicular exchange bias of 3600 Oe and a coercive field of 350 Oe were observed at room temperature. The effective interfacial exchange energy is estimated to be $J_\mathrm{eff} = 0.24$ mJ/m$^2$ and the effective uniaxial anisotropy constant of the antiferromagnet is $K_\mathrm{eff} = 24$ kJ/m$^3$. The maximum effective perpendicular anisotropy field of the CoFeB layer is $H_\mathrm{ani} = 3400$ Oe. These values are larger than any previously reported values. These results possibly open a route to magnetically stable, exchange biased perpendicularly magnetized spin valves., 4 pages, 5 figures

We report on the new polycrystalline exchange bias system MnN/CoFe, which shows exchange bias of up to 1800Oe at room temperature with a coercive field around 600Oe. The room temperature values of the interfacial exchange energy and the effective uniaxial anisotropy are estimated to be $J_\mathrm{eff} = 0.41\,\mathrm{mJ}/\mathrm{m}^2$ and $K_\mathrm{eff} = 37\,\mathrm{kJ}\,/\,\mathrm{m}^3$. The thermal stability was found to be tunable by controlling the nitrogen content of the MnN. The maximum blocking temperature exceeds $325^\circ$C, however the median blocking temperature in the limit of thick MnN is $160^\circ$C. Good oxidation stability through self-passivation was observed, enabling the use of MnN in lithographically defined microstructures. As a proof-of-principle we demonstrate a simple GMR stack exchange biased with MnN, which shows clear separation between parallel and antiparallel magnetic states. These properties come along with a surprisingly simple manufacturing process for the MnN films., 7 pages, 6 figures