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5. Donor-Acceptor Pairs Recombination as the Origin of the Emission Shift In InGaN/GaN Scintillator Heterostructures Doped with Zn

6. Changes to Material Phase and Morphology Due to High-Level Molybdenum Doping of ZnO Nanorods: Influence on Luminescence and Defects

8. Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers

11. The Effect of Be Co‐Doping on Luminescence Properties of Gd3Al3Ga2O12:Ce Glass Ceramics.

14. Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs

16. Bulk Magnetic Terahertz Metamaterials Based On Dielectric Microspheres

18. InGaN/GaN Structures: Effect of the Quantum Well Number on the Cathodoluminescent Properties.

23. The Effect of Be Co‐Doping on Luminescence Properties of Gd3Al3Ga2O12:Ce Glass Ceramics

25. Bulk rigid terahertz metamaterials based on dielectric microspheres

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