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We report magnetization changes generated by an electric field in ferromagnetic Ga$_{1-x}$Mn$_x$N grown by molecular beam epitaxy. Two classes of phenomena have been revealed. First, over a wide range of magnetic fields, the magnetoelectric signal is odd in the electric field and reversible. Employing a macroscopic spin model and atomistic Landau-Lifshitz-Gilbert theory with Langevin dynamics, we demonstrate that the magnetoelectric response results from the inverse piezoelectric effect that changes the trigonal single-ion magnetocrystalline anisotropy. Second, in the metastable regime of ferromagnetic hystereses, the magnetoelectric effect becomes non-linear and irreversible in response to a time-dependent electric field, which can reorient the magnetization direction. Interestingly, our observations are similar to those reported for another dilute ferromagnetic semiconductor Cr$_x$(Bi$_{1-y}$Sb$_y$)$_{1-x}$Te$_3$, in which magnetization was monitored as a function of the gate electric field. Those results constitute experimental support for theories describing the effects of time-dependent perturbation upon glasses far from thermal equilibrium in terms of an enhanced effective temperature., Comment: 18 pages, 10 Figures

Strain relaxation of thick InGaN layers was studied in order to develop technology of InGaN templates for deposition of InGaN Quantum Wells (QWs) and InGaN layers of high-In-content. In this paper, we show that InGaN layers grown on misoriented (0001)-GaN substrates relax by preferential activation of certain glide planes for misfit dislocation formation. Substrate misorientation changes resolved shear stresses, affecting the distribution of misfit dislocations within each dislocation set. We demonstrate that this mechanism leads to an anisotropic strain as well as a tilt of the InGaN layer with respect to the GaN substrate. It appears that these phenomena are more pronounced in structures grown on substrates misoriented toward <11-20> direction than corresponding structures with <-1100> misorientation. These features would influence the properties of the overgrown InGaN QWs and should be taken into consideration during designing structures grown on relaxed InGaN templates. We reveal that the lattice of partially relaxed InGaN has a triclinic deformation, thus requiring advanced XRD analysis. The presentation of just a single asymmetric reciprocal space map commonly practiced in the literature can lead to misleading information regarding the relaxation state of partially relaxed wurtzite structures., Comment: 29 pages, 6 figures, 3 tables

This study explores the suitability of semi-insulating compounds, specifically (Cd,Mn)Te and (Cd,Mn)(Te,Se), as materials for room temperature X-ray and gamma-ray detectors. These compounds were grown using the Bridgman method, known for its efficient growth rate. The investigation aims to compare their crystal structure, mechanical properties, optical characteristics, and radiation detection capabilities. The addition of selenium to (Cd,Mn)Te increased the compound's hardness. However, (Cd,Mn)(Te,Se) exhibited one order of magnitude higher etch pit density compared to (Cd,Mn)Te. Photoluminescence analysis at low temperatures revealed the presence of defect states in both materials, characterized by shallow and deep donor-acceptor pair transitions (DAP). Annealing in cadmium vapors effectively eliminated DAP luminescence in (Cd,Mn)Te but not in (Cd,Mn)(Te,Se). Spectroscopic performance assessments indicated that the (Cd,Mn)Te detector outperformed the (Cd,Mn)(Te,Se) detector in responding to a Co-57 source. The reduced performance in the latter case may be attributed to either the presence of a deep trap related to deep DAP luminescence, minimally affected by annealing, or the dominant presence of block-like structures in the samples, as indicated by X-ray diffraction measurements. The block-like structures in (Cd,Mn)(Te,Se) showed ten times larger misorientation angles compared to the (Cd,Mn)Te crystals. (Cd,Mn)Te crystal revealed excellent single crystal properties, demonstrated by narrower omega scan widths. The study also highlights the influence of grain boundaries and twins on crystal structure quality. In our opinion, Bridgman-grown (Cd,Mn)Te shows greater promise as a material for X-ray and gamma-ray detectors compared to (Cd,Mn)(Te,Se)., Comment: 33 pages, 11 figures

Anomalous Hall effect (AHE) plays important role in the rapidly developing field of antiferromagnetic spintronics. It has been recently discussed that it can be a feature of not only uncompensated magnetic systems but also in altermagnetic materials. Hexagonal MnTe belongs to this appealing group of compounds exhibiting AHE and is commonly perceived as magnetically compensated. Here, we demonstrate that bulk form of MnTe exhibits small but detectable magnetic moment correlating with hysteretic behaviour of the AHE. We formulate a phenomenological model which explains how this feature allows to create a disbalance between states with opposite N\'eel vector and prevent the AHE signal from averaging out to zero. Moreover, we show how the dependence of AHE on the N\'eel vector arises on microscopical level and highlight the differences in Berry curvature between magnetically compensated and uncompensated systems.

Newly discovered altermagnets are magnetic materials exhibiting both compensated magnetic order, similar to antiferromagnets, and simultaneous non-relativistic spin-splitting of the bands, akin to ferromagnets. This characteristic arises from the specific symmetry operations that connect the spin sublattices. In this report, we show with ab initio calculations that the semiconductive MnSe exhibits altermagnetic spin-splitting in the wurtzite phase as well as a critical temperature well above room temperature. It is the first material from such space group identified to possess altermagnetic properties. Furthermore, we demonstrate experimentally through structural characterization techniques that it is possible to obtain thin films of both the intriguing wurtzite phase of MnSe and the more common rock-salt MnSe using molecular beam epitaxy on GaAs substrates. The choice of buffer layers plays a crucial role in determining the resulting phase and consequently extends the array of materials available for the physics of altermagnetism.

Magnesium aluminate scandium oxide (ScAlMgO4) is a promising lattice-matched substrate material for GaN- and ZnO-based optoelectronic devices. Yet, despite its clear advantages over substrates commonly used in heteroepitaxial growth, several fundamental properties of ScAlMgO4 remain unsettled. Here, we provide a comprehensive picture of its optical, electronic and structural properties by studying ScAlMgO4 single crystals grown by the Czochralski method. We use variable angle spectroscopic ellipsometry to determine complex in-plane and out-of-plane refractive indices in the range from 193 to 1690 nm. An oscillator-based model provides a phenomenological description of the ellipsometric spectra with excellent agreement over the entire range of wavelengths. For convenience, we supply the reader also with Cauchy formulas describing the real part of the anisotropic refractive index for wavelengths above 400 nm. Ab initio many-body perturbation theory modeling provides information about the electronic structure of ScAlMgO4, and successfully validated experimentally obtained refractive index values. Simulations also show exciton binding energy as large as a few hundred of meV, indicating ScAlMgO4 as a promising material for implementation in low-threshold, deep-UV lasing devices operating at room temperature. X-ray diffraction measurements confirm lattice constants of ScAlMgO4 previously reported, but in addition, reveal that dominant crystallographic planes (001) are mutually inclined by about 0.009{\deg}. In view of our work, ScAlMgO4 is a highly transparent, low refractive index, birefringent material similar to a sapphire, but with a much more favorable lattice constant and simpler processing., Comment: Physical Review B 2023 (Published)

Thin crystalline layers of TaAs Weyl semimetal (9 and 18 nm thick) are grown by molecular beam epitaxy on GaAs(001) substrates. The (001) planes of the tetragonal TaAs lattice are parallel to the GaAs(001) substrate, but the corresponding in-plane crystallographic directions of the substrate and the layer are rotated by 45{\deg}. In spite of a substantial lattice mismatch (about 19%) between GaAs(001) substrate and TaAs epilayer no misfit dislocations are observed at the GaAs(001)/TaAs(001) interface. Only stacking fault defects in TaAs are detected with transmission electron microscopy. Thorough X-ray diffraction measurements and analysis of the in-situ reflection high energy electron diffraction images indicates that TaAs layers are fully relaxed already at the initial deposition stage. Atomic force microscopy imaging reveals the columnar structure of the layers, with lateral (parallel to the layer surface) columns about 20 nm wide and 200 nm long. Both X-ray diffraction and transmission electron microscopy measurements indicate that the columns share the same orientation and crystalline structure., Comment: 23 pages, 6 figures

Incorporation of Bi into GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires grown by molecular beam epitaxy is studied with transmission electron microscopy. Nanowires are grown on GaAs(111)B substrates with Au-droplet assisted mode. Bi-doped shells are grown at low temperature (300 {\deg}C) with a close to stoichiometric Ga/As flux ratio. At low Bi fluxes, the Ga(As,Bi) shells are smooth, with Bi completely incorporated into the shells. Higher Bi fluxes (Bi/As flux ratio ~ 4%) led to partial segregation of Bi as droplets on the nanowires sidewalls, preferentially located at the nanowire segments with wurtzite structure. We demonstrate that such Bi droplets on the sidewalls act as catalysts for the growth of branches perpendicular to the GaAs trunks. Due to the tunability between zinc-blende and wurtzite polytypes by changing the nanowire growth conditions, this effect enables fabrication of branched nanowire architectures with branches generated from selected (wurtzite) nanowire segments., Comment: 41 pages, 14 figures

In this paper, we apply the angle-resolved Optically Detected Magnetic Resonance (ODMR) technique to study series of strained (Cd, Mn)Te/(Cd, Mg)Te quantum wells (QWs) produced by molecular beam epitaxy. By analyzing characteristic features of ODMR angular scans, we determine strain-induced axial-symmetry spin Hamiltonian parameter D with neV precision. Furthermore, we use low-temperature optical reflectivity measurements and X-ray diffraction scans to evaluate the local strain present in QW material. In our analysis, we take into account different thermal expansion coefficients of GaAs substrate and CdTe buffer. The additional deformation due to the thermal expansion effects has the same magnitude as deformation origination from the different compositions of the samples. Based on the evaluated deformations and values of strain-induced axial-symmetry spin Hamiltonian parameter D, we find strain spin-lattice coefficient G11 = (72.2 +- 1.9) neV for Mn2+ in CdTe and shear deformation potential b = (-0.94 +- 0.11) eV for CdTe.

The Facility for Antiproton and Ion Research (FAIR) in Darmstadt, Germany, provides unique possibilities for a new generation of hadron-, nuclear- and atomic physics experiments. The future antiProton ANnihilations at DArmstadt (PANDA or $\overline{\rm P}$ANDA) experiment at FAIR will offer a broad physics programme, covering different aspects of the strong interaction. Understanding the latter in the non-perturbative regime remains one of the greatest challenges in contemporary physics. The antiproton-nucleon interaction studied with PANDA provides crucial tests in this area. Furthermore, the high-intensity, low-energy domain of PANDA allows for searches for physics beyond the Standard Model, e.g. through high precision symmetry tests. This paper takes into account a staged approach for the detector setup and for the delivered luminosity from the accelerator. The available detector setup at the time of the delivery of the first antiproton beams in the HESR storage ring is referred to as the \textit{Phase One} setup. The physics programme that is achievable during Phase One is outlined in this paper., Comment: 35 pages, 15 figures

A ferromagnetic coupling between localized Mn spins was predicted in a series of \textit{ab initio} and tight binding calculations and experimentally verified for the dilute magnetic semiconductor Ga$_{1-x}$Mn$_x$N. In the limit of small Mn concentrations, $x \lesssim 0.01$, the paramagnetic properties of this material were successfully described using a single ion crystal field model approach. In order to obtain the description of magnetization in (Ga,Mn)N in the presence of interacting magnetic centers, we extend the previous model of a single substitutional Mn$^{3+}$ ion in GaN by considering pairs, triplets and quartets of Mn$^{3+}$ ions coupled by a ferromagnetic superexchange interaction. Using this approach we investigate how the magnetic properties, particularly the magnitude of the uniaxial anisotropy field, change as the number of magnetic Mn$^{3+}$ ions in a given cluster increases from 1 to 4. Our simulations are then exploited in explaining experimental magnetic properties of Ga$_{1-x}$Mn$_x$N with $x \cong 0.03$, where the presence of small magnetic clusters gains in significance. As a result the approximate lower and upper limits for the values of exchange couplings between Mn$^{3+}$ ions in GaN, being in nearest neighbors $J_{\mathrm{nn}}$ and next nearest neighbors $J_{\mathrm{nnn}}$ positions, respectively, are established., Comment: 14 pages, 6 figures

Many conductors, including recently studied Dirac materials, show saturation of coherence length on decreasing temperature. This surprising phenomenon is assigned to external noise, residual magnetic impurities or two-level systems specific to non-crystalline solids. Here, by considering the SnTe-class of compounds as an example, we show theoretically that breaking of mirror symmetry deteriorates Berry's phase quantization, leading to additional dephasing in weak-antilocalization magnetoresistance (WAL-MR). Our experimental studies of WAL-MR corroborate these theoretical expectations in (111) Pb$_{1-x}$Sn$_x$Se thin film with Sn contents $x$ corresponding to both topological crystalline insulator and topologically trivial phases. In particular, we find the shortening of the phase coherence length in samples with intentionally broken mirror symmetry. Our results indicate that the classification of quantum transport phenomena into universality classes should encompass, in addition to time-reversal and spin-rotation invariances, spatial symmetries in specific systems., Comment: Accepted version

PANDA (anti-Proton ANnihiliation at DArmstadt) is planned to be one of the four main experiments at the future international accelerator complex FAIR (Facility for Antiproton and Ion Research) in Darmstadt, Germany. It is going to address fundamental questions of hadron physics and quantum chromodynamics using cooled antiproton beams with a high intensity and and momenta between 1.5 and 15 GeV/c. PANDA is designed to reach a maximum luminosity of 2x10^32 cm^2 s. Most of the physics programs require an excellent particle identification (PID). The PID of hadronic states at the forward endcap of the target spectrometer will be done by a fast and compact Cherenkov detector that uses the detection of internally reflected Cherenkov light (DIRC) principle. It is designed to cover the polar angle range from 5{\deg} to 22{\deg} and to provide a separation power for the separation of charged pions and kaons up to 3 standard deviations (s.d.) for particle momenta up to 4 GeV/c in order to cover the important particle phase space. This document describes the technical design and the expected performance of the novel PANDA Disc DIRC detector that has not been used in any other high energy physics experiment (HEP) before. The performance has been studied with Monte-Carlo simulations and various beam tests at DESY and CERN. The final design meets all PANDA requirements and guarantees suffcient safety margins., Comment: TDR for Panda/Fair to be published

Structural defects in the p-ZnTe/i-CdTe/n-CdTe single-crystalline heterojunctions designed for photovoltaic applications have been investigated by transmission electron microscopy (TEM) and deep-level transient spectroscopy (DLTS). Lattice parameters and misfit strain in the undoped CdTe absorber layers of the heterojunctions, grown by the molecular-beam epitaxy technique on two different substrates, GaAs and CdTe, have been determined with high-resolution X-ray diffractometry. A dense network of misfit dislocations at the lattice-mismatched CdTe/GaAs and ZnTe/CdTe interfaces and numerous threading dislocations and stacking faults have been shown by the cross-sectional TEM imaging of the heterojunctions. The DLTS measurements revealed five deep-level traps in the heterojunctions grown on the GaAs substrates and only three of them in the heterojunctions grown on CdTe. One of the traps, showing the exponential capture kinetics of charge carriers, has been identified as associated with the double acceptor level of Cd vacancies in the CdTe absorber layers. All the other traps have been attributed to the electronic states of extended defects, presumably dislocations, on the grounds of their logarithmic capture kinetics. Two of these traps, displaying the largest values of their capture cross-section and the properties characteristic of bandlike electronic states, have been ascribed to the core states of dislocations. It is argued that they are most likely responsible for decreased lifetime of photo-excited carriers resulting in a low energy conversion efficiency of solar cells based on similarly grown heterojunctions.

Weak antilocalization measurements has become a standard tool for studying quantum coherent transport in topological materials. It is often used to extract information about number of conducting channels and dephasing length of topological surface states. We study thin films of prototypical topological crystalline insulator SnTe. To access microscopic characteristic of these states we employ a model developed by Tkachov and Hankiewicz, [Physical Review B 84, 035444]. Using this model the spatial decay of the topological states is obtained from measurements of quantum corrections to the conductivity in perpendicular and parallel configurations of the magnetic field. Within this model we find interaction between two topological boundaries which results in scaling of the spatial decay with the film thickness. We attribute this behavior to bulk reservoir which mediates interactions by scattering events without phase breaking of topological carriers., Comment: 6 pages , 5 figures