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Formation of polar nano regions through solid-solution additions are known to enhance significantly the functional properties of ferroelectric materials. Despite considerable progress in characterizing the microscopic behavior of polar nano regions, understanding their real-space atomic structure and dynamics of formation remains a considerable challenge. Here, using the method of dynamic pair distribution function, we provide direct insights into the role of solid-solution additions towards the stabilization of polar nano regions in the Pb-free ferroelectric of Ba(Zr,Ti)O3. It is shown that for an optimum level of substitution of Ti by larger Zr ions, the dynamics of atomic displacements for ferroelectric polarization are slowed sufficiently, which leads to increased local correlation among dipoles below THz frequencies. The dynamic pair distribution function technique demonstrates unique capability to obtain insights into locally correlated atomic dynamics in disordered materials, including new Pb-free ferroelectrics, which is necessary to understand and control their functional properties.

We measured phonon frequencies and linewidths in doped and undoped BaFe2As2 single crystals by inelastic x-ray scattering and compared our results with density functional theory (DFT) calculations. In agreement with previous work, the calculated frequencies of some phonons depended on whether the ground state was magnetic or not and, in the former case, whether phonon wavevector was parallel or perpendicular to the magnetic ordering wavevector. The experimental results agreed better with the magnetic calculation than with zero Fe moment calculations, except the peak splitting expected due to magnetic domain twinning was not observed. Furthermore, phonon frequencies were unaffected by the breakdown of the magnetic ground state due to either doping or increased temperature. Based on these results we propose that phonons strongly couple not to the static order, but to high frequency magnetic fluctuations., Comment: Minor revision of the text

In Fe-As based superconductors magnetism and superconductivity show strong sensitivity to the lattice, suggesting a possibility of unconventional electron-phonon coupling. We investigated c-axis polarized phonons in doped and undoped BaFe2As2 by inelastic X-ray scattering. Phonon peak positions and linewidths did not vary significantly as a function of doping either by Co or by K. The linewidth of the Fe vibration shows unusual wavevector-dependence, which may be due to hybridization with in-plane modes. Comparison with the density functional theory shows significant difference for the energy of the As-As vibrations (Raman active at the zone center) but not for the Fe-As vibrations (infrared-active at the zone center). This behavior cannot be explained by a 10% softening of Fe-As interaction strength as proposed previously for in-plane polarized vibrations.

Using neutron pair distribution function (PDF) analysis over the temperature range from 1000 K to 15 K, we demonstrate the existence of local polarization and the formation of medium-range, polar nanoregions (PNRs) with local rhombohedral order in a prototypical relaxor ferroelectric Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_3$. We estimate the volume fraction of the PNRs as a function of temperature and show that this fraction steadily increases from 0 % to a maximum of $\sim$ 30% as the temperature decreases from 650 K to 15 K. Below T$\sim$200 K the PNRs start to overlap as their volume fraction reaches the percolation threshold. We propose that percolating PNRs and their concomitant overlap play a significant role in the relaxor behavior of Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_3$., Comment: 4 pages, 3 figures

High resolution total and indium differential atomic pair distribution functions (PDFs) for In_(0.5)Ga_(0.5)As alloys have been obtained by high energy and anomalous x-ray diffraction experiments, respectively. The first peak in the total PDF is resolved as a doublet due to the presence of two distinct bond lengths, In-As and Ga-As. The In differential PDF, which involves only atomic pairs containing In, yields chemical specific information and helps ease the structure data interpretation. Both PDFs have been fit with structure models and the way in that the underlying cubic zinc-blende lattice of In_(0.5)Ga_(0.5)As semiconductor alloy distorts locally to accommodate the distinct In-As and Ga-As bond lengths present has been quantified., Comment: 9 pages, 7 figure