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In this paper, we demonstrate the laser characterization of Cr:ZnS/Se polycrystalline gain media in non-selective unpolarized, linearly polarized, and twisted mode cavities. Lasers were based on post-growth diffusion-doped, commercially available antireflective-coated Cr:ZnSe and Cr:ZnS polycrystals with a length of 9 mm. The spectral output of lasers based on these gain elements in non-selective unpolarized and linearly polarized cavities was measured to be broadened to ∼20-50 nm due to the spatial hole burning (SHB) effect. SHB alleviation in the same crystals was realized in the “twisted mode” cavity, with linewidth narrowing to ∼80-90 pm. Both broadened and narrow-line oscillations were captured by adjusting the orientation of intracavity waveplates with respect to facilitated polarization.

It was demonstrated that in the nonselective cavities, suppression of the spatial hole burning via "mode twisting" for lasers based on polycrystalline Cr:ZnS and Cr:ZnSe results in linewidth narrowing to ~80-90 pm from ~20-50 nm.

10 µm lasing is studied in a compact CO

We report mechanically Q-switched 2.94 µm Er:YAG laser based on spinning mirror with 805 mJ output energy in a single 61 ns pulse at 1 Hz repetition rate and 670 Hz rotational rate of the spinning mirror. This record output energy was achieved with the use of 300 mm long MQS Er:YAG laser cavity consisted of 70% output coupler, 7x120 mm AR coated Er(50%):YAG crystal and spinning HR mirror. The maximum output energy was limited by the optical damage of the Er:YAG AR coatings.

We report on mid-IR Fe:ZnSe master oscillator power amplifier (MOPA) laser system operating at room temperature (RT) pumped by a radiation of mechanically Q-switched Er:YAG laser operating at 2.94 m, at 3Hz repetition rate. The maximum output energy was as high as 250mJ in ~250 ns pulses. The RT gain-switched Fe:ZnSe master oscillator demonstrated tunability over 3.60-5.15 µm spectral range with a maximum output energy of ~3 mJ. The output energies of 12 (8), 34 (25) and 60 (48) mJ were demonstrated at 4.4 (4.1) µm in the 1st, 2nd and 3rd stages of amplifier, respectively, with a total pump energy of 200 mJ.

We report a flashlamp pumped mechanically Q-switched (MQS) 2.94 μm Er:YAG laser based on a spinning mirror with a highest output energy of 805 mJ at a pulse duration of 61 ns and 13 MW of peak power at 1 Hz repetition rate. This record output energy was achieved with the use of 300 mm long MQS Er:YAG laser cavity consisting of a 70% output coupler, 7 × 120 mm AR coated Er(50%):YAG crystal, and 4200 rad/s angular speed of the spinning mirror. The pulse jitter was also measured by using optical triggering and was smaller than 10 ns for 150 ns Q-switched pulses, which could be applicable to many laser applications where precise synchronization of pulses is required.

We present recent results on 1645/1617 nm Er:YAG and 2090 nm Ho:YAG laser systems optically pumped by efficient CW fiber lasers. Multi-mJ pulse energy, MW-level peak powers are obtained in a range of repetition rates.

10 {\mu}m lasing is studied in a compact CO2-He cell pressurized up to 15 atm when optically pumped by a ~50 mJ Fe:ZnSe laser tunable around 4.3 {\mu}m. The optimal pump wavelength and partial pressure of CO2 for generating 10 {\mu}m pulses are found to be ~4.4 {\mu}m and 0.75 atm, respectively. Without cavity optimization, the optical-to-optical conversion efficiency reached ~10% at a total pressure of 7 atm. The gain lifetime is measured to be ~1 {\mu}s at pressures above 10 atm, indicating the feasibility of using high-pressure optically pumped CO2 for the efficient amplification of picosecond 10 {\mu}m pulses., Comment: 10 pages, 8 figures

We report a technique for generation of ultra-broadband coherent femtosecond continua in the infrared. The laser architecture is based on the Cr:ZnS–GaSe and Cr:ZnS–ZGP tandem arrangements that enable simultaneous amplification of ultrashort middle IR pulses and augmentation of pulses’ spectrum via a chain of intrapulse three-wave mixings. The first part of the tandems is based on a single-pass polycrystalline Cr:ZnS amplifier, which is optically pumped by off-the-shelf continuous wave Er-doped fiber laser and outputs 2-cycle pulses with multi-Watt average power at 80 MHz repetition rate, at the central wavelength 2.5 μm. The second stage of the tandems comprises a GaSe or ZGP crystals configured for intrapulse difference frequency generation. The Cr:ZnS–GaSe tandem has allowed us to achieve multi-octave 2–20 μm continuum with 2 W power in the range 2–3 μm and power in excess of 20 mW in the important range 3–20 μm. On the other hand, Cr:ZnS–ZGP tandem features long-wave infrared (6–12 μm) output pulses with record braking sub-Watt power level. Last but not least, Cr:ZnS–GaSe and Cr:ZnS–ZGP IR sources have small footprints and are easily convertible to the optical frequency combs with low carrier-to-envelope timing jitter.

We report laser operation of spinning mirror mechanically Q-switched (MQS), flashlamp pumped 2.94 μm Er:YAG laser depending on the angular speed of the mirror, repetition rate, size and temperature of the gain element, pulse duration and jitter of Q-switch pulses, as well as pump pulse energy. The highest output energy of 260 mJ with a pulse duration of 150 ns was realized with the use of 7×120 mm Er(50%):YAG at 5 Hz repetition rate and 4200 rad/s angular speed of the spinning mirror. The efficiency of Q-switched operation was ~50% with respect to free-running regime. Using optical triggering, the pulse jitter was measured to be smaller than 10 ns for 160 ns Q-switched pulses. Optical triggering could be used for synchronization with mode-locked laser in chirp-pulse and regenerative amplifiers. We also report on development of room temperature gain-switched Fe:ZnSe laser pumped by a radiation of MQS Er:YAG laser. The maximum output energy of 9 mJ from Fe:ZnSe laser was demonstrated using MQS Er:YAG laser as pump source.

We report the mechanically Q-switched 2.94 µm Er: YAG laser with a record 350 mJ output energy at 3 Hz repetition rate with 160 ns pulse duration and ~10 ns pulse jitter for fine synchronization of pulses.

We report on room temperature Fe:ZnSe MOPA system tunable over 3.6-5.2 µm pumped by radiation of Q-switched 2.94 µm Er:YAG laser. The maximum output energy was measured to be 60mJ under 200mJ of pump energy.

Enabling broad tunability, high peak and average power, ultrashort pulse duration, and all known modes of laser operation—transition-metal (TM)-doped II–VI chalcogenides are the materials of choice for direct lasing in the mid-IR. The host materials feature broad infrared transparency, high thermal conductivity, low phonon cutoff, low optical losses, and are available as either single crystals or polycrystalline ceramics. Doped with TM ions, these media exhibit a four-level energy structure, the absence of excited state absorption, as well as broad absorption and emission bands. Doped single-crystals of high optical quality are difficult to grow; however, the advent of postgrowth diffusion doped ceramics has resulted in significant progress in laser development. Here, we summarize recent experimental laser results on Cr and Fe doped II–VI chalcogenides providing access to the 1.8–6 μm spectral range with a high (>60%) efficiency, multi-Watt-level [140 W in continuous wave (CW)] output powers, tunability of >1000 nm, short-pulse (

Iron-doped binary and ternary chalcogenide crystals are very promising for tunable solid-state lasers operating over the 3-6 μm spectral range. The most significant results have been reported for iron doped ZnSe crystals with 9.6 W output power in CW at 77K when pumped by radiation of Cr:ZnSe laser, and 1.4 J at ~150 ns pulse duration at room temperature (RT) when pumped by the radiation of HF laser. The lifetime of the upper laser level 5T2 of the Fe2+ ion in a ZnSe matrix falls with temperature from 52µs at 77 K to 370 ns at RT due to the increase of nonradiative relaxation. It allows effective laser oscillation in the gain-switched regime at RT and operation in Q-switched regime at low temperature. We report on RT gain-switched Fe:ZnSe lasers tunable over 3.60-5.15 µm pumped by radiation of mechanically Q-switched Er:YAG laser operating at 2.94 µm. The maximum output energy was measured to be 5 mJ under 15mJ of pump energy. The long upper level lifetime of Fe:ZnSe gain medium is sufficient for energy storage with pumping by radiation of free running Er:YAG lasers. We demonstrated that Q-switched regime of oscillation could be effectively utilized for Fe:ZnSe lasers. The rotating back mirror was used as a mechanical Q-switcher of a Fe:ZnSe laser. The maximum output energy in single 150 ns pulse was measured to be 3mJ which is ~25% from the theoretical limit. This approach could be attractive for development of high-energy short-pulse solid-state mid-IR systems operating over 3.6-5.0 µm spectral range

Kerr-lens mode locked lasers based on polycrystalline Cr:ZnS and Cr:ZnSe have come of age and, arguably, represent the most viable route for generation of ultra-short pulses in the range 2–3 μm. Developed designs of Kerr-lens mode locked oscillators feature high efficiency and provide access to few-cycle MIR pulses with Watt-level power in a very broad range of pulse repetition rates. However, currently available dispersive mirror coatings limit spectral coverage of these oscillators to below one octave hampering their conversion to frequency combs via frequency envelop offset frequency (fceo) control and stabilization. Supercontinuum (SC) generation using photonic waveguides is a promising approach for spectral broadening of pulsed coherent sources at low pulse energies and small footprint. Among many materials promising for this application stoichiomentric Si3N4 (SiN) holds a unique place due to its high nonlinearity, CMOS compatible fabrication process, and spectral coverage over visible-middle-infrared (MIR) range. In the current paper we experimentally demonstrate the generation of a supercontinuum spanning more than 1.5 octaves over 1.2-3.7 um range in a silicon nitride waveguide using sub-40-fs pulses at 2.35 um generated by 75 MHz Cr:ZnS laser. The coupling efficiency was about 16%, which corresponds to 0.56nJ pulse energy and 12.4 kW peak power. We also have observed that threshold for SC generation was about 50 mW of incident power that corresponds to 2.4KW peak power. The demonstrated coherent 1.5 octaves spanning bandwidth is ideal for self-referenced f-2f detection of the fceo. In addition, this represents a promising broadband coherent source for dual comb spectroscopy.

We report, to the best of our knowledge, the first super-octave femtosecond polycrystalline Cr:ZnS laser at the central wavelength 2.4 µm. The laser is based on a non-polarizing astigmatic X-folded resonator with normal incidence mounting of the gain element. The chromatic dispersion of the resonator is controlled with a set of dispersive mirrors within one third of an optical octave over 2.05–2.6 µm range. The resonator’s optics is highly reflective in the range 1.8–2.9 µm. The components of the oscillator’s output spectrum at the wavelengths 1.6 µm and 3.2 µm are detected at –60 dB with respect to the main peak. Average power of few-cycle Kerr-lens mode-locked laser is 1.4 W at the pulse repetition frequency 79 MHz. That corresponds to 22% conversion of cw radiation of Er-doped fiber laser, which we used for optical pumping of the Cr:ZnS oscillator.

We report on a RT gain-switched Fe:ZnSe master oscillator power amplifier (MOPA) system tunable over 3.8–5.0 µm pumped by radiation of Er:YAG laser operating at 2.94 µm. The mechanically Q-switched Er:YAG laser with output energy up to 220 mJ was used as a pump source for a master oscillator and three-stage power amplifier. The maximum output energies in 200 ns pulses exceeded 60, 56, and 48 mJ at 4.4, 4.3, and 4.1 µm, respectively, under 220 mJ of pump energy. The extraction energy efficiencies were measured to be 25, 30, and 40% at the first, second, and third stages, respectively.

We report the first room temperature gain-switched Fe:ZnSe hot-pressed ceramic laser pumped by 2.94 µm radiation of mechanically Q-switched Er:YAG laser. The maximum output energy at 4.2 µm was 41 mJ at 3 Hz repetition rate and 120 ns pulse duration. The measured slope efficiency was 25% with respect to the absorbed energy. This technique could be attractive for the future development of high-energy short-pulse solid-state mid-IR systems.

In this paper, prospects of using diamond with NV− centers as a gain medium have been studied. Spectroscopic characterization of NV− centers in diamond as well as absorption saturation and pump-probe experiments have been carried out. Absorption and emission cross-sections were estimated to be 2.8 × 10-17 cm2 and 4.3 × 10-17 cm2 at the maximum of absorption and emission bands, respectively. It was observed from emission spectra under pulse excitation that some NV− are photoionized to NV0 centers with ZPL at 575 nm. Room temperature luminescence lifetime of NV− centers was measured to be 12ns, which is close to the previously reported lifetime in bulk diamond (~13ns). Saturated transmission was only about 11% of calculated values even at energy fluence much higher than the saturation flux. Two excited state absorptions (ESAs) with different relaxation times (“fast-decay” and “slow-decay with relaxation times of ~500 ns and several tens of microseconds, respectively) were revealed in transmission decay kinetics at 632 nm. Kinetics of transmission at 670 nm was dominated by “slow-decay” ESA process. Kinetics of dk/k0 in shorter wavelength were strongly dominated by “fast-decay” ESA process. These results definitively indicate that stimulated emission of NV− centers is suppressed by photoionization and ESAs and the possibility of diamond lasers based on NV− centers is low.

We report on gain-switched room temperature Fe:ZnSe laser tunable over 3.60-5.15 µm pumped by Er:YAG laser operating at 2.94 µm. The maximum output energy was measured to be 5 mJ under 15mJ of pump energy.

We demonstrate the generation of a supercontinuum spanning more than 1.5 octaves over 1.2-3.7 μm range in a silicon nitride waveguide using sub-40-fs pulses at 2.35 μm generated by 75 MHz Cr:ZnS laser.

Thermal diffusion or Erbium in ZnS in a mixture of ErF3 and ZnS powders under hot isostatic pressing was studied. Obtained Er:ZnS ceramics featured strong visible-near-IR photoluminescence of Er ions.

Transition metal (TM) doped II-VI chalcogenide laser materials offer a unique blend of physical, spectroscopic, and technological parameters that make them the gain media of choice for cost effective broadly tunable lasing in the Mid-IR. The II-VI semiconductor hosts provide a low phonon cut-off, broad IR transparency, and high thermal conductivity. When doped with transition metal ions, these materials feature ultrabroadband gain, low saturation intensities, and large pump absorption coefficients. This combined with the low-cost mass production technology of crystal fabrication by postgrowth thermal diffusion, as well as broad availability of convenient pump sources, make these materials ideal candidates for broadly tunable mid-IR lasing in CW, gain-switched, free running, and mode-locked regimes of operation. This review summarizes experimental results on optically pumped lasers based on Cr and Fe doped II-VI wide band semiconductors providing access to the 1.9-6 μm spectral range with a high (exceeding 60%) efficiency, multi-Watt-level (18 W in gain switch and 30 W in pure CW) output powers, tunability in excess of 1000 nm, short-pulse (

This paper summarizes recent improvements of output characteristics of polycrystalline Cr:ZnS/Se master oscillators in Kerr-Lens-Mode-Locked regime. We developed a flexible design of femtosecond polycrystalline Cr:ZnS and Cr:ZnSe lasers and amplifiers in the spectral range 2–3 μm. We obtained few-optical-cycle pulses with multi-Watt average power in very broad range of repetition rates 0.08–1.2 GHz. We also report on efficient nonlinear frequency conversion directly in the polycrystalline gain elements of ultra-fast lasers and amplifiers. In this work we also report on recent progress in spinning ring gain element technology and report to the best of our knowledge the highest output power of 9.2 W Fe:ZnSe laser operating in CW regime at 4150nm.

We report on CW, acousto-optically tuned Cr:ZnS mid-IR laser operating over 1890 - 2785 nm spectral range with 40% slope efficiency with respect to the pump power in the maximum of tuning curve. The tuning range over 1890 - 2785 nm was demonstrated by tuning the radio frequency (RF) applied to a TeO 2 acousto-optical filter between 30.3 MHz and 20.12 MHz. A maximum output power of 2.8 W was achieved at 2.23 μm under 10.7 W of pump power. The linewidth of the Cr:ZnS laser measured at central wavelength was < 0.8 nm.

We report to the best of our knowledge the highest output power of 9.2 W Fe:ZnSe laser operating in CW regime. The lasing wavelength was at 4.15 μm in non-selective cavity at 77K.

We demonstrate the generation of a supercontinuum spanning more than 1.5 octaves over the 1.2–3.7 µm range in a silicon nitride waveguide using sub-40-fs pulses at 2.35 µm generated by a 75 MHz Kerr-lens mode-locked Cr:ZnS laser.

We report on room temperature gain-switched and Q-switched Fe:ZnSe lasers tunable over 3.60-5.15 µm pumped by radiation of an 2.94 µm Er:YAG laser. The maximum output energy was measured to be 5 mJ under 15 mJ of pump energy in gain-switched regime. We also demonstrated a mechanically Q-switched regime of oscillation of Fe:ZnSe lasers. This approach could be attractive for the development of high-energy short-pulse solid-state mid-IR systems operating over 3.6-5.2 µm spectral range.

We report on the spectroscopic and laser characterization of negatively charged nitrogen-vacancy (NV−) centers in diamond. Spectroscopic properties such as absorption and emission spectra as well as kinetics were studied, and parameters such as cross-sections and lifetimes were estimated. A vibronic band of NV0 with zero phonon line (ZPL) at 575 nm was detected under 532 nm pulsed excitation due to the photoionization of NV−. Transmission of 532 nm pump pulses saturate around ∼10%, which is much smaller than the theoretical level. Δk/k0 kinetics revealed slow recovery of NV− centers after photoionization under 532 nm pumping, which involved different relaxation channels depending on the probe beam wavelengths. Localization of the electrons in the metastable state of NV0 centers resulted in higher saturated transmission of 632 nm pump.

We report a few-cycle, super-octave, polycrystalline Cr:ZnS laser system with 4 W power at 78 MHz repetition rate, where all of the necessary optical signals for the measurement of the carrier–envelope offset frequency are generated intrinsically.

We report on CW Cr:ZnS laser electronically tuned with acousto-optic tellurium dioxide filter operating with 20-30 GHz drive frequencies. The tuning range was over 1.9-2.8 mm with slope efficiency >40% and oscillation linewidth

The mastery of active tumor targeting is a great challenge in near infrared photothermal therapy (NIRPTT). To improve efficiency for targeted treatment of malignant tumors, we modify the technique of conjugating gold nanoparticles to tumor-specific antibodies. Polyethylene glycol-coated (PEGylated) gold nanorods (GNRs) were fabricated and conjugated to an anti-EGFR antibody. We characterized the conjugation efficiency of the GNRs by comparing the efficiency of antibody binding and the photothermal effect of the GNRs before and after conjugation. We demonstrate that the binding efficiency of the antibodies conjugated to the PEGylated GNRs is comparable to the binding efficiency of the unmodified antibodies and 33.9% greater than PEGylated antibody-GNR conjugates as reported by Liao and Hafner (2005). In addition, cell death by NIRPTT was sufficient to kill nearly 90% of tumor cells, which is comparable to NIRPTT with GNRs alone confirming that NIRPTT using GNRs is not compromised by conjugation of GNRs to antibodies.

Mechanically robust and low loss single-mode arsenic sulfide fibers are used to deliver high power mid-infrared sources. Anti-reflection coatings were deposited on the fiber facets, enabling 90% transmission through 20 cm length fibers. 10.3 W was transmitted through an anti-reflection coated fiber at 2053 nm, and uncoated fibers sustained 12 MW/cm2 intensities on the facet without failure. A Cr:ZnSe laser transmitted >1 W at 2520 nm, and a Fe:ZnSe laser transmitted 0.5 W at 4102 nm. These results indicate that by improving the anti-reflection coatings and using a high beam quality mid-infrared source, chalcogenide fibers can reliably deliver ≥10 W in a single mode, potentially out to 6.5 µm.

5E mi d-IR transitions of iron ions. In addition, samples of ZnSe were similarly sealed in evacuated quartz ampoules in the presence of Praseodymium metal and annealed at 950°C under 43.99 R/s and 0 R/s and the diffusion lengths and Pr concentrations were compar HG 7KH -irradiation results in better intrusion of the iron ions from the metal film and increase of the diffusion length at ~25%, while 3UDVHRG\PLXPGLIIXVLRQLVGUDPDWLFDOO\HQKDQFHGE\ -irradiation during the annealing process.

We demonstrate post-growth thermal diffusion rates of praseodymium ions into ZnSe. Near and middle infrared luminescence spectra and kinetics of Pr:ZnSe crystals were studied at RT.

We report on novel design of tunable mid-IR Fe:ZnSe and Cr:ZnSe solid state lasers which provided significant increase of output average power up to 35W@4.1 µm and 57W@2.5 µm and 20W@2.94 µm.

Hadiyah N Green,1,2 Stephanie D Crockett,3 Dmitry V Martyshkin,1 Karan P Singh,2,4 William E Grizzle,2,5 Eben L Rosenthal,2,6 Sergey B Mirov11Department of Physics, Center for Optical Sensors and Spectroscopies, 2Comprehensive Cancer Center, 3Department of Pediatrics, Division of Neonatology, 4Department of Medicine, Division of Preventive Medicine, Biostatistics and Bioinformatics Shared Facility, 5Department of Pathology, 6Department of Surgery, Division of Otolaryngology, Head and Neck Surgery, The University of Alabama at Birmingham, Birmingham, AL, USAPurpose: Nanoparticle (NP)-enabled near infrared (NIR) photothermal therapy has realized limited success in in vivo studies as a potential localized cancer therapy. This is primarily due to a lack of successful methods that can prevent NP uptake by the reticuloendothelial system, especially the liver and kidney, and deliver sufficient quantities of intravenously injected NPs to the tumor site. Histological evaluation of photothermal therapy-induced tumor regression is also neglected in the current literature. This report demonstrates and histologically evaluates the in vivo potential of NIR photothermal therapy by circumventing the challenges of intravenous NP delivery and tumor targeting found in other photothermal therapy studies.Methods: Subcutaneous Cal 27 squamous cell carcinoma xenografts received photothermal nanotherapy treatments, radial injections of polyethylene glycol (PEG)-ylated gold nanorods and one NIR 785 nm laser irradiation for 10 minutes at 9.5 W/cm2. Tumor response was measured for 10–15 days, gross changes in tumor size were evaluated, and the remaining tumors or scar tissues were excised and histologically analyzed.Results: The single treatment of intratumoral nanorod injections followed by a 10 minute NIR laser treatment also known as photothermal nanotherapy, resulted in ~100% tumor regression in ~90% of treated tumors, which was statistically significant in a comparison to the average of all three control groups over time (P

Progress in fabrication and mid-IR lasing of Cr and Fe thermal-diffusion doped ZnSe/S polycrystals is reported. Multi-Watt-level (30W) CW output, tunability in excess of 1000nm, short-pulse (

We report on recent progress in development of new gain media for tunable (3–8 μm) mid-IR lasers as well as Fe:ZnS/Se lasers operating in CW (>1.5W), gain-switched (>1 mJ@7ns@lkHz) and long-pulse (>0.5 J@20μs) regimes.

We report on recent progress in development of high power; high energy; tunable (1.9-3.3 um), mid-IR Cr:ZnS/Se lasers operating in CW (>20 W), gain-switched (>20 mJ@7ns) and long pulse ( >1 J@7ms) regimes.

We report on recent progress in development of new iron-doped binary and ternary mid-IR gain media for 3-8 μm spectral region and laser operation in CW, gain-switched and long-pulse regimes.

Currently, a majority of Volumetric Bragg gratings (VBG) use photorefractive glasses with a transmission band between 0.3 and 2.7 μm. We have proposed and realized VBGs for mid-IR spectral range based on LiF color center crystals (LiF:CC). γ-irradiated LiF:CC crystals feature strong absorption bands in the visible and near-IR spectral range, where selective color center photo-bleaching allows for the LiF refractive index modification. The absence of active absorption in LiF:CCs at wavelengths longer than 1.3 μm results in a VBG that is stable under mid-IR irradiation. Our calculations predict that ~60% diffraction efficiency over 1-6 μm spectral range could be realized in ~1 cm long VBG. To verify this calculation, we fabricated periodic structures in LiF:CC crystals with 24 and 12 μm spacings by CCs photo-bleaching using femtosecond Ti:sapphire laser pulses. Periodic structures exhibit diffraction in multiple orders in the Raman-Nath regime at 0.532, 0.632, and 1.56 μm. The first order diffraction efficiencies were stronger for a visible radiation due to a bigger refractive index variations and additional amplitude modulation. The demonstrated diffraction at 1.56 μm is a clear manifestation of a phase grating in LiF and serves as a proof of feasibility of these LiF:CC crystals for mid-IR VBG applications.

A stable mid-IR photorefractive material was proposed based on LiF crystals with color centers (LiF:CCCs). The phase gratings in LiF:CCCs were fabricated and characterized in visible and IR spectral ranges.

We report on crystal-field engineering of solid-state laser gain media based on new transition metal Iron doped II-VI Ternary and Quaternary semiconductor materials for mid-IR tunable laser applications.

Recent advances in Cr2+ and Fe2+ doped mid-IR polycrystalline, hot-pressed ceramic, waveguides, powders, powders in the liquid suspension and polymer-film, and quantum dot laser materials fabrication and lasing under optical excitation are presented.

We report methods of fabrication and laser-spectroscopic characterization of mid-IR gain media based on micron size Cr2+:ZnSe/ZnS powders, as well as Cr2+:ZnSe/ZnS doped fluorocarbon polymer films, and perfluorocarbon liquids. All samples demonstrated strong mid-IR luminescence over 2000-3000nm spectral range under optical 1700nm excitation. The random lasing of the doped liquids and polymer films was realized with pump energy density of 100 and 15mJ/cm2, respectively. Previously we have demonstrated mid-IR electroluminescence of Cr:ZnSe with n-conductivity provided by thermal diffusion of Al and Zn. However, the formation of conductivity was accompanied by compensation of the Cr2+ optical centers and relatively weak chromium electroluminescence. In this paper we report study of the Cr2+ compensation in the crystals co-doped with donor and acceptor impurities. Optical and electrical characterization of Cr:ZnSe crystals with Ag, Cu, Al, In, and Zn co-dopants were studied to optimize mid-IR electroluminescens of the Cr2+ ions. The best results were obtained with p-conductive Ag:Cr:ZnSe samples featuring a low 600 Ωcm resistivity. First mid-IR electroluminescence in presumable p-type Ag:Cr:ZnSe was demonstrated, which could prove valuable for developing laser diodes that function in this spectral region.

We demonstrate a novel approach to precisely pattern fluorescent nanodiamond-arrays with enhanced far-red intense photostable luminescence from silicon-vacancy (Si-V) defect centers. The precision-patterned pre-growth seeding of nanodiamonds is achieved by a scanning probe 'dip-pen' nanolithography technique using electrostatically driven transfer of nanodiamonds from 'inked' cantilevers to a UV-treated hydrophilic SiO2 substrate. The enhanced emission from nanodiamond dots in the far-red is achieved by incorporating Si-V defect centers in a subsequent chemical vapor deposition treatment. The development of a suitable nanodiamond ink and mechanism of ink transport, and the effect of humidity and dwell time on nanodiamond patterning are investigated. The precision patterning of as-printed (pre-CVD) arrays with dot diameter and dot height as small as 735 nm ± 27 nm and 61 nm ± 3 nm, respectively, and CVD-treated fluorescent ND-arrays with consistently patterned dots having diameter and height as small as 820 nm ± 20 nm and, 245 nm ± 23 nm, respectively, using 1 s dwell time and 30% RH is successfully achieved. We anticipate that the far-red intense photostable luminescence (~738 nm) observed from Si-V defect centers integrated in spatially arranged nanodiamonds could be beneficial for the development of next generation fluorescence-based devices and applications.