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We investigate the effect of strain and film thickness on the orbital and magnetic properties of ${\mathrm{LaSrCrO}}_{3}\phantom{\rule{0.16em}{0ex}}(\mathrm{LSCO})/{\mathrm{LaSrMnO}}_{3}$ (LSMO) heterostructures using bulk magnetometry, soft x-ray magnetic spectroscopy, first-principles density-functional theory, high-resolution electron microscopy, and x-ray diffraction. We observe an antiparallel ordering of the magnetic moments between the ferromagnetic LSMO layers and the LSCO spacers, leading to a strain-independent ferromagnetic ground state of the LSCO/LSMO heterostructures for LSMO layers as thin as two unit cells. As the LSMO thickness is increased, a net ferromagnetic state is maintained, however, the average magnetic moment per Mn is found to be dependent on the magnitude of the substrate-induced strain. The differences in the magnetic responses are related to preferential occupation of the Mn ${x}^{2}\ensuremath{-}{y}^{2}$ (in-plane) $d$ orbitals for tensile strain and $3{z}^{2}\ensuremath{-}{r}^{2}$ (out-of-plane) orbitals under compressive strain, leading to competing ferromagnetic and antiferromagnetic exchange interactions within the LSMO layers. These results underscore the relative contributions of orbital, structural, and spin degrees of freedom and their tunability in atomically thin crystalline complex oxide layers.

The control of chemical exchange across heterointerfaces formed between ultrathin functional transition-metal oxide layers provides an effective route to manipulate the electronic properties of these systems. By determining the layer-resolved structural profile across the interface between the Mott insulator, LaTiO3 (LTO) grown epitaxially on SrTiO3 (STO)-buffered silicon by molecular beam epitaxy, we find that interfacial cationic exchange depends on the surface termination of the strained STO buffer. Using a combination of temperature-dependent transport and synchrotron x-ray crystal truncation rods and reciprocal space mapping, an enhanced conductivity in STO/LTO/SrO-terminated STO buffers compared to heterostructures with TiO 2-terminated STO buffers is correlated with La/Sr exchange and the formation of metallic La 1−xSr xTiO 3. La/Sr exchange effectively reduces the strain energy of the system due to the large lattice mismatch between the nominal oxide layers and the Si substrate.

A single atomic layer of ZrO2 exhibits ferroelectric switching behavior when grown with an atomically abrupt interface on silicon. Hysteresis in capacitance–voltage measurements of a ZrO2 gate stack demonstrate that a reversible polarization of the ZrO2 interface structure couples to the carriers in the silicon. First-principles computations confirm the existence of multiple stable polarization states and the energy shift in the semiconductor electron states that result from switching between these states. This monolayer ferroelectric represents a new class of materials for achieving devices that transcend conventional complementary metal oxide semiconductor (CMOS) technology. Significantly, a single atomic layer ferroelectric allows for more aggressively scaled devices than bulk ferroelectrics, which currently need to be thicker than 5–10 nm to exhibit significant hysteretic behavior (Park, et al. Adv. Mater. 2015, 27, 1811).

Complex oxides and semiconductors exhibit distinct yet complementary properties owing to their respective ionic and covalent natures. By electrically coupling complex oxides to traditional semiconductors within epitaxial heterostructures, enhanced or novel functionalities beyond those of the constituent materials can potentially be realized. Essential to electrically coupling complex oxides to semiconductors is control of the physical structure of the epitaxially grown oxide, as well as the electronic structure of the interface. Here we discuss how composition of the perovskite A- and B-site cations can be manipulated to control the physical and electronic structure of semiconductor—complex oxide heterostructures. Two prototypical heterostructures, Ba1−xSrxTiO3/Ge and SrZrxTi1−xO3/Ge, will be discussed. In the case of Ba1−xSrxTiO3/Ge, we discuss how strain can be engineered through A-site composition to enable the re-orientable ferroelectric polarization of the former to be coupled to carriers in the semiconductor. In the case of SrZrxTi1−xO3/Ge we discuss how B-site composition can be exploited to control the band offset at the interface. Analogous to heterojunctions between compound semiconducting materials, control of band offsets, i.e., band-gap engineering, provides a pathway to electrically couple complex oxides to semiconductors to realize a host of functionalities.

At crystalline interfaces where a valence-mismatch exists, electronic, and structural interactions may occur to relieve the polar mismatch, leading to the stabilization of non-bulk-like phases. We show that spontaneous reconstructions at polar La0.7Sr0.3MnO3 interfaces are correlated with suppressed ferromagnetism for film thicknesses on the order of a unit cell. We investigate the structural and magnetic properties of valence-matched La0.7Sr0.3CrO3/La0.7Sr0.3MnO3 interfaces using a combination of high-resolution electron microscopy, first principles theory, synchrotron X-ray scattering and magnetic spectroscopy and temperature-dependent magnetometry. A combination of an antiferromagnetic coupling between the La0.7Sr0.3CrO3 and La0.7Sr0.3MnO3 layers and a suppression of interfacial polar distortions are found to result in robust long-range ferromagnetic ordering for ultrathin La0.7Sr0.3MnO3. These results underscore the critical importance of interfacial structural and magnetic interactions in the design of devices based on two-dimensional oxide magnetic systems.

The strong interfacial coupling at the 3d-5d transition metal-oxide interfaces has generated excitement due to the possibility of engineering a wide range of quantum phenomena and functionalities. Here, we investigate the electronic interfacial coupling and structural properties of LaCrO3/KTaO3 heterostructures. High-quality LaCrO3 films were grown on KTaO3 substrates using molecular beam epitaxy. These heterostructures show a robust two-dimensional electron gas and a metallic behavior down to liquid helium temperature. Using magnetoresistance measurements, we analyze the coupling of electronic orders between Cr 3d and Ta 5d states and observe signatures of weak anti-localization and Kondo scattering at low-temperature transport. The results provide direct evidence that a crossover (weak anti-localization to Kondo) occurs with increasing temperature as the dephasing scattering events reduce the coherence length. Our observations allow for a clear and detailed picture of two distinct quantum corrections to conductivity at low temperature.

We investigate the structural and magnetic properties of La 0.7 Sr 0.3 CrO 3 ( LSCO ) / La 0.7 Sr 0.3 MnO 3 (LSMO) heterostructures grown on (001)-oriented MgO by molecular beam epitaxy. Due to the large film-substrate lattice mismatch, strain relaxation is found to occur within the first 2–3 unit cells (uc) of the film as evidenced by reflection high energy electron diffraction and high-resolution synchrotron x-ray reciprocal space mapping. We find that the presence of the LSCO spacer and capping layers leads to ferromagnetism in ultra-thin LSMO layers with thicknesses of the order of 2 uc with the magnetic easy axis oriented in the film plane. Net magnetic moments of 1.4 and 2.4 μ B / Mn are measured for (2 uc LSCO/2 uc LSMO) and (2 uc LSCO/4 uc LSMO) superlattices, respectively, by superconducting quantum interference device magnetometry. The effective magnetic anisotropy of the relaxed (2 uc LSCO/4 uc LSMO) heterostructure is found to be an order of magnitude higher than bulk LSMO highlighting the critical role of interfacial interactions in tuning magnetic anisotropy at complex oxide interfaces.

Complex oxides and semiconductors exhibit distinct yet complementary properties owing to their respective ionic and covalent natures. By electrically coupling oxides to semiconductors within epitaxial heterostructures, enhanced or novel functionalities beyond those of the constituent materials can potentially be realized. Key to electrically coupling oxides to semiconductors is controlling the physical and electronic structure of semiconductor – crystalline oxide heterostructures. Here we discuss how composition of the oxide can be manipulated to control physical and electronic structure in Ba1-xSrxTiO3/ Ge and SrZrxTi1-xO3/Ge heterostructures. In the case of the former we discuss how strain can be engineered through composition to enable the re-orientable ferroelectric polarization to be coupled to carriers in the semiconductor. In the case of the latter we discuss how composition can be exploited to control the band offset at the semiconductor - oxide interface. The ability to control the band offset, i.e. band-gap engineering, provides a pathway to electrically couple crystalline oxides to semiconductors to realize a host of functionalities.

The relationship between the sheet carrier concentration, ns, of LaCrO3(LCO)/SrTiO3(STO) heterostructures and their structural properties has been investigated. Under low oxygen partial pressure, the STO substrate is reduced during growth as evidenced by a high ns of 1016 cm−2. By controlling the post-growth annealing conditions, heterostructures with ns of 1013–1016 cm−2 are achieved. The atomic-scale structure of the samples is obtained using high-resolution synchrotron x-ray diffraction measurements. For heterostructures with ns at or below 3 × 1013 cm−2, polar distortions are present within the LCO layers and increase in magnitude with a decrease in sheet carrier concentration. These distortions are absent for samples with ns on the order of 1015–1016 cm−2 where interfacial carriers play a role in alleviating the polar discontinuity at the LCO/STO interface. These results suggest that interfacial charge carriers and polar distortions can act as complementary mechanisms to alleviate the polar discontinuity at polar/non-polar complex oxide interfaces.

In the recent past, heterostructures of magnetic oxide thin films have attracted a great deal of research excitement due to very interesting physical properties such as antiferromagnetic interlayer coupling, tunable exchange-bias, interfacial driven magnetic properties and high mobility electron gas across the interfaces. In this work, we report on the comprehensive magnetic properties observed from the heterostructures of (2 unit cells) La0.7Sr0.3CrO3/(8 unit cells) La0.7Sr0.3MnO3/(2 unit cells) La0.7Sr0.3CrO3, which are epitaxially deposited on SrTiO3 substrate by plasma-assisted oxide molecular beam epitaxy. Using SQUID magnetometer, the magnetic properties are studied when the magnetic field was applied both in plane and out of plane. The Curie temperature of this structure is found to be at 290 K. Most significantly, at 2 K, we observed a complete up/down shift (along magnetization axis) of hysteresis loop when the sample was cooled under a magnetic field of ± 5000 Oe in the in-plane configuration. We believe that the strong antiferromagnetic (super) exchange coupling of Mn-Cr across the two interfaces is responsible for the observed exchange bias. We will present and discuss our in-detailed experimental findings collected on this heterostructure as a function of temperature and magnetic field.

Wet-etch techniques to realize suspended microscale structures of single-crystalline SrTiO3 and BaTiO3 grown on Si are explored. The authors examine the effects of oxygen vacancies and dislocations on etch rates. Both oxygen vacancies and dislocations enhance etching, yielding rates that are sufficiently high to enable conventional photoresist to serve as a mask layer. Suspended bridge structures are realized by etching the underlying Si substrate using a potassium hydroxide solution. The ability to realize suspended microscale structures using wet-etch techniques that are compatible with standard semiconductor device processing opens a pathway to integrate multifunctional oxides in microelectromechanical systems.

The interfacial structure of SrZrxTi1−xO3 films grown on semiconducting Ge substrates is investigated by synchrotron X-ray diffraction and first-principles density functional theory. By systematically tuning the Zr content x, the effects of bonding at the interface and epitaxial strain on the physical structure of the film can be distinguished. The interfacial perovskite layers are found to be polarized as a result of cation-anion ionic displacements perpendicular to the perovskite/semiconductor interface. We find a correlation between the observed buckling and valence band offsets at the SrZrxTi1−xO3/Ge interface. The trends in the theoretical valence band offsets as a function of Zr content for the polar structures are in agreement with reported X-ray photoelectron spectroscopy measurements. These results have important implications for the integration of functional oxide materials with established semiconductor based technologies.

Electronic, lattice, and spin interactions at the interfaces between crystalline complex transition metal oxides can give rise to a wide range of functional electronic and magnetic phenomena not found in bulk. At hetero-interfaces, these interactions may be enhanced by combining oxides where the polarity changes at the interface. The physical structure between non-polar SrTiO$_3$ and polar La$_{1-x}$Sr$_x$MnO$_3$(x=0.2) is investigated using high resolution synchrotron x-ray diffraction to directly determine the role of structure in compensating the polar discontinuity. At both the oxide-oxide interface and vacuum-oxide interfaces, the lattice is found to expand and rumple along the growth direction. The SrTiO$_3$/La$_{1-x}$Sr$_x$MnO$_3$ interface also exhibits intermixing of La and Sr over a few unit cells. The results, hence, demonstrate that polar distortions and ionic intermixing coexist and both pathways play a significant role at interfaces with polar discontinuities.

The effect of growth conditions on the structural and electronic properties of the polar/non-polar LaCrO$_3$/SrTiO$_3$ (LCO/STO) interface has been investigated. The interface is either insulating or metallic depending on growth conditions. A high sheet carrier concentration of 2x10$^{16}$ cm$^{-2}$ and mobility of 30,000 cm$^2$/V s is reported for the metallic interfaces, which is similar to the quasi-two dimensional gas at the LaAlO$_{3}$/SrTiO$_{3}$ interface with similar growth conditions. High-resolution synchrotron X-ray-based structural determination of the atomic-scale structures of both metallic and insulating LCO/STO interfaces show chemical intermixing and an interfacial lattice expansion. Angle resolved photoemission spectroscopy of 2 and 4 uc metallic LCO/STO shows no intensity near the Fermi level indicating that the conducting region is occurring deep enough in the substrate to be inaccessible to photoemission spectroscopy. Post-growth annealing in flowing oxygen causes a reduction in the sheet carrier concentration and mobility for the metallic interface while annealing the insulating interface at high temperatures and low oxygen partial pressures results in metallicity. These results highlight the critical role of defects related to oxygen vacancies on the creation of mobile charge carriers at the LCO/STO heterointerface.

The magnetic structure of Fe-doped CoFe2O4 (Co1−xFe2+xO4) grown on MgO (0 0 1) and SrTiO3 (0 0 1) substrates is studied with superconducting quantum interference device magnetometry and soft x-ray magnetic spectroscopies. X-ray and electron diffraction show that the choice of substrate has large effects on the strain, crystal structure and surface morphology of Co1−xFe2+xO4 thin films. Samples grown on MgO have small, coherent strains and surfaces that are nearly atomically flat, whereas films grown on SrTiO3 have large tensile strains and surfaces terminated with islands, which indicate the presence of a large density of misfit dislocations. These differences in structural properties correlate with the large differences seen in the magnetic structure; samples grown on SrTiO3 have larger magnetic moments and increased anisotropies compared to those grown on MgO. Most strikingly, the large magnetic spin and orbital moments found in the films grown on SrTiO3 suggest a suppression of anti-phase boundary formation, which we attribute to the large compressive lattice mismatch and the formation of misfit dislocations during the film growth in order to relieve the epitaxial strain. This results in the films grown on SrTiO3 having magnetic properties that are more similar to bulk Co1−xFe2+xO4 than those grown on MgO, demonstrating that epitaxial strain can result in large changes in the magnetic structure of Co1−xFe2+xO4.

We determine the surface reconstruction of $\mathrm{SrTi}{\mathrm{O}}_{3}$ used to achieve superconducting FeSe films in experiments, which is different from the $1\ifmmode\times\else\texttimes\fi{}1\mathrm{Ti}{\mathrm{O}}_{2}$-terminated $\mathrm{SrTi}{\mathrm{O}}_{3}$ assumed by most previous theoretical studies. In particular, we identify the existence of a double $\mathrm{Ti}{\mathrm{O}}_{2}$ layer at the FeSe/$\mathrm{SrTi}{\mathrm{O}}_{3}$ interface that plays two important roles. First, it facilitates the epitaxial growth of FeSe. Second, ab initio calculations reveal a strong tendency for electrons to transfer from an oxygen deficient $\mathrm{SrTi}{\mathrm{O}}_{3}$ surface to FeSe when the double $\mathrm{Ti}{\mathrm{O}}_{2}$ layer is present. The double layer helps to remove the hole pocket in the FeSe at the \ensuremath{\Gamma} point of the Brillouin zone and leads to a band structure characteristic of superconducting samples. The characterization of the interface structure presented here is a key step towards the resolution of many open questions about this superconductor.

The strong interaction at an interface between a substrate and thin film leads to epitaxy and provides a means of inducing structural changes in the epitaxial film. These induced material phases often exhibit technologically relevant electronic, magnetic, and functional properties. The 2×1 surface of a Ge(001) substrate applies a unique type of epitaxial constraint on thin films of the perovskite oxide BaTiO_{3} where a change in bonding and symmetry at the interface leads to a non-bulk-like crystal structure of the BaTiO_{3}. While the complex crystal structure is predicted using first-principles theory, it is further shown that the details of the structure are a consequence of hidden phases found in the bulk elastic response of the BaTiO_{3} induced by the symmetry of forces exerted by the germanium substrate.

We present electrical and structural characterization of epitaxial LaTiO3/SrTiO3 heterostructures integrated directly on Si(100). By reducing the thicknesses of the heterostructures, an enhancement in carrier-carrier scattering is observed in the Fermi liquid behavior, followed by a metal to insulator transition in the electrical transport. The insulating behavior is described by activated transport, and its onset occurs near an occupation of 1 electron per Ti site within the SrTiO3, providing evidence for a Mott driven transition. We also discuss the role that structure and gradients in strain could play in enhancing the carrier density. The manipulation of Mott metal-insulator behavior in oxides grown directly on Si opens the pathway to harnessing strongly correlated phenomena in device technologies.

Quantum dots (QDs) have applications in optoelectronic devices, quantum information processing and energy harvesting. Although the droplet epitaxy fabrication method allows for a wide range of material combinations to be used, little is known about the growth mechanisms involved. Here we apply direct X-ray methods to derive sub-ångström resolution maps of QDs crystallized from indium droplets exposed to antimony, as well as their interface with a GaAs (100) substrate. We find that the QDs form coherently and extend a few unit cells below the substrate surface. This facilitates a droplet-substrate exchange of atoms, resulting in core-shell structures that contain a surprisingly small amount of In. The work provides the first atomic-scale mapping of the interface between epitaxial QDs and a substrate, and establishes the usefulness of X-ray phasing techniques for this and similar systems.

Solidification of single-crystal nickel-base superalloys introduces large-scale segregation of constituent elements and defects such as dislocations and mosaicity. By exploiting the energy tunability and interference capabilities of high-brilliance X-ray radiation, key structural features of the dendritic single crystals were mapped over large areas. Interference and diffraction of synchrotron X-rays revealed significant misorientations between individual dendrites in the as-solidified state. For the first time this mosaic structure was quantified for an array of dendrites and correlated with the density of “grown-in” dislocations whose density ranged from 107 to 108 cm−2. Absorption contrast permitted simultaneous mapping of the distribution of refractory metal additives (e.g. rhenium and tungsten), which segregated preferentially to the dendrite cores with a linear composition gradient toward the interdendritic regions. The results demonstrate that synchrotron X-ray imaging is promising for in situ studies of single-crystal structure and defects in nickel-base superalloys.

Two dimensional electron gases (2DEGs) formed at the interfaces of oxide heterostructures draw considerable interest owing to their unique physics and potential applications. Growing such heterostructures on conventional semiconductors has the potential to integrate their functionality with semiconductor device technology. We demonstrate 2DEGs on a conventional semiconductor by growing $GdTiO_3-SrTiO_3$ on silicon. Structural analysis confirms the epitaxial growth of heterostructures with abrupt interfaces and a high degree of crystallinity. Transport measurements show the conduction to be an interface effect, with $\sim 9\times 10^{13} \; cm^{-2}$ electrons per interface. Good agreement is demonstrated between the electronic behavior of structures grown on Si and on an oxide substrate, validating the robustness of this approach to bridge between lab-scale samples to a scalable, technologically relevant materials system., Comment: 10 pages, 4 figures

We experimentally demonstrate a novel approach to substantially modify orbital occupations and symmetries in electronically correlated oxides. In contrast to methods using strain or confinement, this orbital tuning is achieved by exploiting charge transfer and inversion symmetry breaking using atomically layered heterostructures. We illustrate the technique in the LaTiO_{3}-LaNiO_{3}-LaAlO_{3} system; a combination of x-ray absorption spectroscopy and ab initio theory reveals electron transfer and concomitant polar fields, resulting in a ∼50% change in the occupation of Ni d orbitals. This change is sufficiently large to remove the orbital degeneracy of bulk LaNiO_{3} and creates an electronic configuration approaching a single-band Fermi surface. Furthermore, we theoretically show that such three-component heterostructuring is robust and tunable by choice of insulator in the heterostructure, providing a general method for engineering orbital configurations and designing novel electronic systems.

The electronic and structural properties of thin LaNiO₃ films grown by using molecular beam epitaxy are studied as a function of the net ionic charge of the surface terminating layer. We demonstrate that electronic transport in nickelate heterostructures can be manipulated through changes in the surface termination due to a strong coupling of the surface electrostatic properties to the structural properties of the Ni—O bonds that govern electronic conduction. We observe experimentally and from first-principles theory an asymmetric response of the structural properties of the films to the sign of the surface charge, which results from a strong interplay between electrostatic and mechanical boundary conditions governing the system. The structural response results in ionic buckling in the near-surface NiO₂ planes for films terminated with negatively charged NiO₂ and bulklike NiO₂ planes for films terminated with positively charged LaO planes. The ability to modify transport properties by the deposition of a single atomic layer can be used as a guiding principle for nanoscale device fabrication.

The integration of complex oxides on silicon presents opportunities to extend and enhance silicon technology with novel electronic, magnetic, and photonic properties. Among these materials, barium titanate (BaTiO3) is a particularly strong ferroelectric perovskite oxide with attractive dielectric and electro-optic properties. Here we demonstrate nanophotonic circuits incorporating ferroelectric BaTiO3 thin films on the ubiquitous silicon-on-insulator (SOI) platform. We grow epitaxial, single-crystalline BaTiO3 directly on SOI and engineer integrated waveguide structures that simultaneously confine light and an RF electric field in the BaTiO3 layer. Using on-chip photonic interferometers, we extract a large effective Pockels coefficient of 213 ± 49 pm/V, a value more than six times larger than found in commercial optical modulators based on lithium niobate. The monolithically integrated BaTiO3 optical modulators show modulation bandwidth in the gigahertz regime, which is promising for broadband applications.

The integration of complex oxides on silicon presents opportunities to extend and enhance silicon technology with novel electronic, magnetic, and photonic properties. Among these materials, barium titanate (BaTiO3) is a particularly strong ferroelectric perovskite oxide with attractive dielectric and electro-optic properties. Here we demonstrate nanophotonic circuits incorporating ferroelectric BaTiO3 thin films on the ubiquitous silicon-on-insulator (SOI) platform. We grow epitaxial, single-crystalline BaTiO3 directly on SOI and engineer integrated waveguide structures that simultaneously confine light and an RF electric field in the BaTiO3 layer. Using on-chip photonic interferometers, we extract a large effective Pockels coefficient of 213 plus minus 49 pm/V, a value more than six times larger than found in commercial optical modulators based on lithium niobate. The monolithically integrated BaTiO3 optical modulators show modulation bandwidth in the gigahertz regime, which is promising for broadband applications.

A Si-integrated modulator based on epitaxial ferroelectric BaTiO3 thin films is demonstrated with gigahertz modulation bandwidth and an effective Pockels coefficient of 213 ± 49 pm/V.

We demonstrate a route to manipulate the polarization and internal electric field of a complex oxide heterostructure using a layering sequence based on the LaAlO3-SrTiO3 interface. By combining sensitive atomic-level mapping of the structure using direct x-ray phase-retrieval methods with theoretical modeling of the electrostatic charge and polarization, we have devised a novel single-domain polar heterostructure. We find that ionic rearrangement results in strain and free energy minimization, and eliminates the polarization discontinuity leading to a two-fold increase of the spontaneous polarization towards the surface of an ultra-thin single-domain BaTiO3 film., APL Materials, 1 (6), ISSN:2166-532X

We describe a general materials design approach that produces large orbital energy splittings (orbital polarization) in nickelate heterostructures, creating a two-dimensional single-band electronic surface at the Fermi energy. The resulting electronic structure mimics that of the high temperature cuprate superconductors. The two key ingredients are: (i) the construction of atomic-scale distortions about the Ni site via charge transfer and internal electric fields, and (ii) the use of three component (tri-component) superlattices to break inversion symmetry. We use {\it ab initio} calculations to implement the approach, with experimental verification of the critical structural motif that enables the design to succeed., Comment: 12 pages, 3 figures and 1 table

In recent years, epitaxial growth of self-assembled quantum dots has offered a way to incorporate new properties into existing solid state devices. Although the droplet heteroepitaxy method is relatively complex, it is quite relaxed with respect to the material combinations that can be used. This offers great flexibility in the systems that can be achieved. In this paper we review the structure and composition of a number of quantum dot systems grown by the droplet heteroepitaxy method, emphasizing the insights that these experiments provide with respect to the growth process. Detailed structural and composition information has been obtained using surface X-ray diffraction analyzed by the COBRA phase retrieval method. A number of interesting phenomena have been observed: penetration of the dots into the substrate (“nano-drilling”) is often encountered; interdiffusion and intermixing already start when the group III droplets are deposited, and structure and composition may be very different from the one initially intended.

The magnetic properties of iron-doped cobalt ferrite (Co${}_{1\ensuremath{-}x}$Fe${}_{2+x}$O${}_{4}$) (001) thin films grown epitaxially on MgO (001) substrates are investigated by superconducting quantum interference device magnetometry and soft x-ray magnetic linear and circular dichroisms. All Co${}_{1\ensuremath{-}x}$Fe${}_{2+x}$O${}_{4}$ (0.01 \ensuremath{\leqslant} $x$ \ensuremath{\leqslant} 0.63) samples have out-of-plane magnetic easy axes and large coercive fields, unlike Fe${}_{3}$O${}_{4}$, due to a large Co${}^{2+}$ orbital moment. The magnetic moments for those samples are significantly reduced from their bulk values; however, as $x$ increases, the magnetic moments tend nearer to their bulk values and increase more rapidly as $x$ approaches 1. This reduction in magnetic moment is attributed to spin canting among the Co${}^{2+}$ cations, owing to a small in-plane tensile strain in the film and to an increased antiferromagnetic alignment among all the cations caused by a partially inverse spinel cubic structure and the likely presence of antiphase boundaries. Our results show that small changes in stoichiometry can lead to significant changes in the magnetic moment of Co${}_{1\ensuremath{-}x}$Fe${}_{2+x}$O${}_{4}$, especially at large values of $x$.

A novel X-ray synchrotron radiation approach is described for real-time imaging of the initiation and growth of fatigue cracks during ultrasonic fatigue (f=20kHz). We report here on new insights on single crystal nickel-base superalloys gained with this approach. A portable ultrasonic fatigue instrument has been designed that can be installed at a high-brilliance X-ray beamline. With a load line and fatigue specimen configuration, this instrument produces stable fatigue crack propagation for specimens as thin as 150μm. The in situ cyclic loading/imaging system has been used initially to image real-time crystallographic fatigue and crack growth under positive mean axial stress in the turbine blade alloy CMSX-4.

Surface x-ray diffraction was used to determine the atomic structures of ${\mathrm{La}}_{1\ensuremath{-}x}{\mathrm{Sr}}_{x}{\mathrm{MnO}}_{3}$ thin films, grown monolayer by monolayer on ${\mathrm{SrTiO}}_{3}$ by pulsed laser deposition. Structures for one-, two-, three-, four-, six-, and nine-monolayer-thick films were solved using the Coherent Bragg rod analysis phase-retrieval method and subsequent structural refinement. Four important results were found. First, the out-of-plane lattice constant is elongated across the substrate-film interface. Second, the transition from substrate to film is not abrupt, but proceeds gradually over approximately three unit cells. Third, Sr segregates towards the topmost monolayer of the film: we determined a Sr-segregation enthalpy of $\ensuremath{-}15\phantom{\rule{0.3em}{0ex}}\mathrm{kJ}∕\mathrm{mol}$ from the occupation parameters. Finally, the electronic bandwidth $W$ was used to explain the onset of magnetoresistance for films of nine or more monolayers thickness. Resistivity measurements of the nine monolayer-thick film confirm magnetoresistance and the presence of a dead layer with mostly insulating properties.

The complete atomic structure of a five-monolayer film of ${\mathrm{LaAlO}}_{3}$ on ${\mathrm{SrTiO}}_{3}$ has been determined for the first time by surface x-ray diffraction in conjunction with the coherent Bragg rod analysis phase-retrieval method and further structural refinement. Cationic mixing at the interface results in dilatory distortions and the formation of metallic ${\mathrm{La}}_{1\ensuremath{-}x}{\mathrm{Sr}}_{x}{\mathrm{TiO}}_{3}$. By invoking electrostatic potential minimization, the ratio of ${\mathrm{Ti}}^{4+}/{\mathrm{Ti}}^{3+}$ across the interface was determined, from which the lattice dilation could be quantitatively explained using ionic radii considerations. The correctness of this model is supported by density functional theory calculations. Thus, the formation of a quasi-two-dimensional electron gas in this system is explained, based on structural considerations.

We demonstrate magnetic field control of surface plasmon excitations in noble-metal/ferromagnetic/noble metal trilayers, analogous to the effects previously observed in semiconductor structures. We show that the coupling of an external magnetic field to the surface plasmon-polariton wave vector is greatly enhanced in the metallic structure due to the ferromagnetic nature of one of its constituents. The observed coupling could be used to modulate the surface plasmon response in ultrasensitive spectroscopic applications.

17 páginas, 8 figuras., Au/Co/Au trilayers are interesting for a range of applications which exploit their unusual optical and electronic transport behaviour in a magnetic field. Here we present a comprehensive structural and morphological study of a series of trilayers with 0–7 nm Co layer thickness fabricated on glass by ultrahigh vacuum vapour deposition. We use a combination of in situ electron diffraction, atomic force microscopy and x-ray scattering to determine the optimum deposition conditions for highly textured, flat and continuous layered structures. The 16 nm Au-on-glass buffer layer, deposited at ambient temperature, is found to develop a smooth (1 1 1) texture on annealing at 350 °C for 10 min. Subsequent growth of the Co layer at 150 °C produces a (1 1 1) textured film with lateral grain size of ~150 nm in the 7 nm-thick Co layer. A simultaneous in-plane and out-of-plane Co lattice expansion is observed for the thinnest Co layers, converging to bulk values for the thickest films. The roughness of the Co layer is similar to that of the Au buffer layer, indicative of conformal growth. The 6 nm Au capping layer smoothens the trilayer surface, resulting in a surface roughness independent of the Co layer thickness., This work was supported in part by the US Department of Energy, Basic Energy Sciences, under grant DEFG02-06ER46273, the Spanish Ministerio de Educación y Ciencia (PR2005-0017 and MAT2005-05524-C02-01), the Comunidad de Madrid (S-0505/MAT/0194 Nanomagnet) and the CSIC (200650I130).

We used Fresnel diffraction from knife-edges to demonstrate spatial coherence of tabletop and ultrafast X-ray sources produced by laser-plasma interaction, and show that source size is limited by the spatial spread of absorbed laser energy.

Tests are being carried out at the CERN H8 Test Facility on the subdetectors of ATLAS. Using MUTRAK, a tool developed by Dan Levin, data from test muon beam runs are converted to PAW plots and ntuples for easy analysis. ROOT classes are currently being developed to convert the PAW output of MUTRAK to ROOT files for more detailed analysis. Also studies are currently underway to understand the effect of sense wire displacements in Monitored Drift Tubes on drift time spectra. Concurrent tests using simulations in GARFIELD and Cosmic Ray MDT experiments are underway to study wire sags which may be up to 480 micrometers due to gravitational and electrostatic forces .

We present the growth and characterization of layered heterostructures comprised of LaTiO3 and SrTiO3 epitaxially grown on Si (001). Magnetotransport measurements show that the sheet carrier densities of the heterostructures scale with the number of LaTiO3/SrTiO3 interfaces, consistent with the presence of an interfacial 2-dimensional electron gas (2DEG) at each interface. Sheet carrier densities of 8.9 × 1014 cm−2 per interface are observed. Integration of such high density oxide 2DEGs on silicon provides a bridge between the exceptional properties and functionalities of oxide 2DEGs and microelectronic technologies.

Thin films of epitaxial SrTiO3 grown on silicon exhibit compressive in-plane strain that may stabilize ferroelectricity in this normally non-ferroelectric material. We investigate this possibility by using an ultra-high vacuum atomic force microscope to measure the local force response of coherently strained SrTiO3 films on silicon to an applied ac electric field. The observed cantilever response is different in regions that were previously written with positive and negative voltages, but the frequency dependence of this response indicates that the dominant forces are related to electrostatic charging rather than ferroelectricity.

The distribution of cations in Fe-doped cobalt ferrite (Co1−xFe2+xO4) is investigated as a function of epitaxial strain through x-ray absorption measurements of samples grown on SrTiO3, MgO, and CoCr2O4-buffered MgAl2O4 (001). In agreement with recent theoretical calculations, compressive (tensile) strain results in the films having a larger (smaller) degree of cation inversion for iron doping levels up to x = 0.62. Measurements of the resistivity further conclude that the degree of cation inversion has a direct effect on the size of the bandgap for stoichiometric CoFe2O4, an effect that is reduced as the iron doping level is increased.

We have used a direct x-ray phasing method, coherent Bragg rod analysis, to obtain sub-angstrom resolution electron density maps of the InAs/GaAs dot system. The dots were grown by the droplet heteroepitaxy (DHE) technique and their structural and compositional properties are compared with those of dots grown by the strain-driven Stranski–Krastanov method. Our results show that the Ga diffusion into the DHE-grown dots is somewhat larger; however, other characteristics such as the composition of the dots’ uppermost layers, the interlayer spacing, and the bowing of the atomic layers are similar.

We report on the use of a direct x-ray phase retrieval method, coherent Bragg rod analysis, to characterize self-assembled InAs quantum dots (QDs) grown epitaxially on GaAs substrates. Electron density maps obtained close to the x-ray absorption edges of the constituent elements are compared to deconvolute composition and atomic spacing information. Our measurements show no evidence of a wetting layer and reveal bowing of the atomic layers throughout the QD, extending from the QD-substrate interface. This leads to a half-layer stacking shift which may act to partially decouple the QDs electronically from the substrate.

For thin film devices based on coupling ferroelectric polarization to charge carriers in semiconductors, the role of the interface is critical. To elucidate this role, we use synchrotron x-ray diffraction to determine the interface structure of epitaxial SrTiO3 grown on the (001) surface of Si. The average displacement of the O octahedral sublattice relative to the Sr sublattice determines the film polarization and is measured to be about 0.05 nm toward the Si, with Ti off-center displacements 0.009 nm away from the substrate. Measurements of films with different boundary conditions on the top of the SrTiO3 show that the polarization at the SrTiO3/Si interface is dominated by oxide-Si chemical interactions.

The resonant response of the complex x-ray scattering factor has been used in conjunction with the coherent Bragg rod analysis phase-retrieval algorithm to determine the composition and strain profiles of ultrathin layers of GaAs grown on InGaAs buffers. The buffer layers are nominally latticed matched with the InP substrate and the subsequent GaAs growth is compared at two different temperatures: 480 and 520°C. We show that electron density maps extracted from Bragg rod scans measured close to the Ga and As K-edges can be used to deconvolute roughness and intermixing. It is found that indium incorporation and roughening lead to a significant reduction of the strain in this system.

We have used surface x-ray diffraction and a direct method of phase reconstruction to obtain subangstrom resolution maps of an ion-beam milled In0.27Ga0.73As∕GaAs(001) thin film exhibiting three-dimensional (3D) epitaxial nanostructures. The 3D electron density was calculated based on the diffraction pattern along the Bragg rods measured with synchrotron radiation, from which the chemical composition, strain profile, and average nanostructure shape were extracted. The film maintained a wetting layer exhibiting a sharp strain gradient, which extended into the substrate. Atop the wetting layer, the ion-beam milled islands possessed an apical shape and were depleted in indium.