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16 results on '"Dirko, Vladimir V."'

9. Two-Dimensional Materials of Group IVA: Latest Advances in Epitaxial Methods of Growth

Author

Lozovoy, Kirill A., Dirko, Vladimir V., Vinarskiy, Vladimir P, Kokhanenko, Andrey P., Voytsekhovskiy, Alexander V., and Akimenko, Nataliya Yu.

Subjects
молекулярные пучки, станен, эпитаксия, германий, олово, плюмбен, General Physics and Astronomy, кремний, cвинец, силицен, германен
Abstract

Two-dimensional materials have become one of the central research topics of scientists around the world after the production of graphene - a monatomic layer of carbon. Currently, two-dimensional crystals are among the most promising materials for next-generation nanoelectronics and photonics. The exploration of the feasibility of 2D materials devices causes a deeper insight into the physical properties of these new materials and provides a starting point for the development of a number of important practical areas. Over the past few years, researchers have been paying increased attention to graphene-like materials of group IVA elements, such as silicene (Si), germanene (Ge), stanene (Sn), and plumbene (Pb). Experimental production and study of the unique properties of two-dimensional monatomic layers of carbon, silicon, germanium, tin, and lead on various substrates created the prerequisites for the development of new generation devices based on them. The wide possibilities for controlling their exotic electronic, magnetic, and optical properties through the choice of the substrate, the design and geometry of the two-dimensional layer, as well as by controlling the magnitude of elastic stresses, have made them a dominating topic for studying in the field of nanotechnology and materials sciences. This paper reviews the latest advances in growing silicene, germanene, stanene, and plumbene using epitaxial methods. Growth technologies for creation of high-quality two-dimensional structures of large area required for promising instrumentation area are considered in more detail.

Published
2022
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12. Single-photon avalanche diode detectors based on group IV materials

Author

Izhnin, Ihor I., primary, Lozovoy, Kirill A., additional, Kokhanenko, Andrey P., additional, Khomyakova, Kristina I., additional, Douhan, Rahaf M. H., additional, Dirko, Vladimir V., additional, Voitsekhovskii, Alexander V., additional, Fitsych, Olena I., additional, and Akimenko, Nataliya Yu., additional

Published
2021
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14. High-resolution RHEED analysis of dynamics of low-temperature superstructure transitions in Ge/Si(001) epitaxial system.

Author

Dirko, Vladimir V, Lozovoy, Kirill A, Kokhanenko, Andrey P, and Voitsekhovskii, Alexander V

Subjects
*MOLECULAR beam epitaxy, *EPITAXY, *ELECTRON diffraction, *SILICON surfaces, *QUANTUM dots, *LOW temperatures
Abstract

In this paper, we analyze superstructural transitions during epitaxial growth of two-dimensional layers and the formation of quantum dots by the Stranskiâ€"Krastanov mechanism in elastically stressed systems by the reflection high-energy electron diffraction method. Detailed dependences of the periodicity parameter N of the 2 × N reconstruction on the effective thickness of the deposited material in a wide range of growth temperatures during epitaxy of germanium on a silicon surface with a crystallographic orientation (001) are obtained. Superstructural transitions and the change in the value of the parameter N at low temperatures of epitaxy in this system have been investigated for the first time. It is shown that the length of dimer rows in such a reconstruction during the growth of pure germanium on silicon can reach a value of no less than N  = 11. A relationship is found between the value of the parameter N, determined by elastic strains in the system, and the critical thickness of the transition from two-dimensional to three-dimensional growth. Based on this relationship, a physical mechanism is proposed that explains the nature of the temperature dependence of the critical thickness of the Stranskiâ€"Krastanov transition, which has been the subject of constant scientific disputes until now. [ABSTRACT FROM AUTHOR]

Published
2022
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