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In this work, self-powered photodetectors (PDs) based on RF magnetron sputtering-fabricated CdS nanorod arrays and polished Si substrates were prepared for the first time. By introducing the pyro-phototronic effect of wurtzite CdS, the self-powered PDs exhibit a broadband response range from UV (365 nm) to IR (1310 nm) at zero bias, even beyond the bandgap limit of the material. Both the photoresponsivity and specific detectivity are also enhanced by 23.3 times compared with those only based on the photovoltaic effect. In addition, the rise and fall times of self-powered PDs are 70 μs and 90 μs under 980 nm laser illumination. This research not only expands the application of CdS nanostructures in the field of pyro-phototronics, but also greatly enriches the preparation methods of CdS based pyro-phototronics materials.

A semiconductor oxide composite consisting of ZnO nanorods (NRs) and ZnO inverse opal (IO) was fabricated and used in the photoanode of quantum dot-sensitized solar cells (QDSSCs). Using polystyrene spheres 500, 800, 1000, and 1500 nm in diameter as the IO template, ZnO composites and corresponding QDSSCs with ZnO IOs of different pore sizes were fabricated. The oxide composite prepared with ZnO IOs of different pore sizes showed similar micro-morphologies; however, the photovoltaic performance of the QDSSCs based on these composites varied greatly. The QDSSCs based on the ZnO composite achieved high power conversion efficiencies (PCEs) of more than 6%, and the maximum PCE was 7.26% when the ZnO IO pore diameter in the composite was 800 nm. This resulted in very high PCE values for the QDSSCs using CdS/CdSe quantum dot sensitizers. With further interface modifications of NH

Tin sulfide semiconductor nanowires (NWs) have been widely investigated for photodetection applications because of their good optical and electrical properties. Herein, we synthesized n-type SnS2 NWs and then fabricated SnS2 NW photodetectors with a ferroelectric polymer side-gate. The strong electric field induced by ferroelectric polymer can effectively suppress the dark current and improve the detectivity in SnS2 NW photodetectors. The photodetectors after polarization depletion exhibit a high photoconductive gain of 4.0 × 105 and a high responsivity of 2.1 × 105 A W−1. Compared with devices without polarization depletion, the detectivity of polarization-depleted photodetectors is improved by at least two orders of magnitude, and the highest detectivity is 1.3 × 1016 Jones. Further, the rise and fall time are 56 and 91 ms respectively, which are about tens of times faster than those without polarization depletion. The device also shows a good spectral response from ultraviolet to near-infrared. This study demonstrates that ferroelectric materials can enhance optoelectronic properties of low-dimensional semiconductors for high-performance photodetectors.

Low-dimensional tin selenide nanoribbons (SnSe NRs) show a wide range of applications in optoelectronics fields such as optical switches, photodetectors, and photovoltaic devices due to the suitable band gap, strong light–matter interaction, and high carrier mobility. However, it is still challenging to grow high-quality SnSe NRs for high-performance photodetectors so far. In this work, we successfully synthesized high-quality p-type SnSe NRs by chemical vapor deposition and then fabricated near-infrared photodetectors. The SnSe NR photodetectors show a high responsivity of 376.71 A W−1, external quantum efficiency of 5.65 × 104%, and detectivity of 8.66 × 1011 Jones. In addition, the devices show a fast response time with rise and fall time of up to 43 μs and 57 μs, respectively. Furthermore, the spatially resolved scanning photocurrent mapping shows very strong photocurrent at the metal-semiconductor contact regions, as well as fast generation-recombination photocurrent signals. This work demonstrated that p-type SnSe NRs are promising material candidates for broad-spectrum and fast-response optoelectronic devices.

P-type nanostructured photodetectors and phototransistors have been widely used in the field of photodetection due to their excellent electrical and optoelectronic characteristics. However, the large dark current of p-type photodetectors will limit the detectivity. Herein, we synthesized small-diameter single-crystalline p-type SnS nanowires (NWs) and then fabricated single SnS NW photodetectors and phototransistors. The device exhibits low noise and low dark current, and its noise current power is as low as 2.4 × 10−28 A2. Under 830 nm illumination and low power density of 0.12 mW cm−2, the photoconductive gain, responsivity and detectivity of the photodetector are as high as 3.9 × 102, 2.6 × 102 A W−1 and 1.8 × 1013 Jones, respectively, at zero gate voltage. The rise and fall time of response are about 9.6 and 14 ms. The experimental results show that the small-diameter p-type SnS NWs have broad application prospects in high-performance and low-power photodetectors with high sensitivity, fast response speed and wide spectrum detection in the future.

Re2Mg(Ni0.7 − x Co0.2Mn0.1Al x )9 (x = 0‒0.04) alloys are prepared by induction melting, and the influence of the partial substitution of Ni by Al on the structure, hydrogen storage, and electrochemical properties of the alloys are investigated systematically. These alloys mainly consist of two main phases with LaNi5 phase and (La,Mg)2Ni7 phase, and minor LaNi2 phase. The pressure-composition isotherms shows that, with Al content increasing in the alloys, the maximum hydrogen storage capacity decreased from 1.16 wt% (x = 0) to 0.99 wt% (x = 0.04). The changes of enthalpy and entropy reveal that the thermodynamic stability and the disordered degree of the hydride alloys increase with the Al addition. Results of electrochemical studies indicate that the substitution of Al for Ni can noticeably improve the cycle stability of the alloy electrode. The capacity retention after 80 cycles is enhanced from 63.6% (x = 0) to 76.5% (x = 0.04). However, the maximum discharge capacity of the alloys decreases. The Re2Mg(Ni0.7 − x Co0.2Mn0.1Al x )9 (x = 0‒0.04) alloys exhibit excellent dischargeability.

Because of the distinct electronic properties and strong interaction with light, quasi-one-dimensional nanowires (NWs) with semiconducting property have been demonstrated with tremendous potential for various technological applications, especially electronics and optoelectronics. However, until now, most of the state-of-the-art NW photodetectors are predominantly based on the n-type NW channel. Here, we successfully synthesized p-type SnSe and SnS NWs via the chemical vapor deposition method and fabricated high-performance single SnSe and SnS NW photodetectors. Importantly, these two NW devices exhibit an impressive photodetection performance with a high photoconductive gain of 1.5 × 104 (2.8 × 104), good responsivity of 1.0 × 104 A W–1 (1.6 × 104 A W–1), and excellent detectivity of 3.3 × 1012 Jones (2.4 × 1012 Jones) under near-infrared illumination at a bias of 3 V for the SnSe NW (SnS NW) channel. The rise and fall times can be as efficient as 460 and 520 μs (1.2 and 15.1 ms), respectively, for the Sn...

A precision H-type sensor method has been developed to measure the thermoelectric performance of individual single-crystalline CdS nanowires for the first time. A nanomanipulation probe was used to directly pick up an individual nanowire from the array and place it on the sensor. Our method is generally applicable to any nanowire synthesized in either array or powder form. By simply changing the external electrical circuits, the Seebeck coefficient, thermal conductivity, and electrical conductivity have been measured on the same nanowire sample to ensure high accuracy and reliability. CdS nanowires have a large Seebeck coefficient over 300 μV K−1 due to their wide band gap, while their thermal conductivity is only one-tenth of that of the bulk material owing to the significant phonon-surface scattering. The figure of merit, ZT, of the CdS nanowire is 0.01 at 320 K, which is larger by two orders of magnitude than the value for a Bi2S3 nanowire, showing a trend of rapid increase above 300 K.

The physicochemical properties for layered perovskite PrBa0.5Sr0.5Co1.5Fe0.5O5+δ (PBSCF) oxide are systematically investigated to gain insight into the correlation between structure, surface state and oxygen reduction reaction properties. The PBSCF sample possesses orthorhombic structure and keeps better structural stability under operating conditions. X-ray photoelectron spectra analysis indicates that the mixed oxidation state of (Co, Fe) and Pr promotes the oxygen reduction reaction kinetics by creating oxygen vacancies at the surface. Mossbauer Spectroscopy affirms that the proportion of Fe3+ and Fe4+ in iron species is 79.1 % and 20.9 %, respectively. The electrode polarization resistance is 0.067 Ω cm2 at 800 °C in air. The oxygen-ion bulk diffusion plays the rate-limiting step during the electrode process. The cell with PBSCF cathode delivers the power density of 590 mW cm−2 at 800 °C. These results show the PBSCF exhibits a promising application prospect in intermediate temperature solid oxide fuel cell.

The structural characterization, surface state and electrochemical performances of LnBaCo2O5+δ (LnBC) (Ln = La, Pr, Nd and Sm) perovskite cathode are systematically investigated for intermediate-temperature solid oxide fuel cells. The structural symmetry gradually distorts with the reduced ionic radius. The electrical conductivity decreases due to the increasing oxygen vacancy concentration from La to Sm. X-ray photoelectron spectroscopy analysis indicates that the concentration of oxygen active sites on the surface of LnBC samples decreases with shrinking Ln3+ radius. The increasing Ln–O bond energy leads to the reduction of the thermal expansion coefficients. The electrochemical performance of LnBC electrode decreases with the decreasing Ln3+ ionic radius. This result may be related to the decreasing.

An efficient ferroelectric-enhanced side-gated single CdS nanowire (NW) ultraviolet (UV) photodetector at room temperature is demonstrated. With the ultrahigh electrostatic field from polarization of ferroelectric polymer, the depletion of the intrinsic carriers in the CdS NW channel is achieved, which significantly reduces the dark current and increases the sensitivity of the UV photodetector even after the gate voltage is removed. Meanwhile, the low frequency noise current power of the device reaches as low as 4.6 × 10−28 A2 at a source-drain voltage Vds = 1 V. The single CdS NW UV photodetector exhibits high photoconductive gain of 8.6 × 105, responsivity of 2.6 × 105 A W−1, and specific detectivity (D*) of 2.3 × 1016 Jones at a low power density of 0.01 mW cm−2 for λ = 375 nm. In addition, the spatially resolved scanning photocurrent mapping across the device shows strong photocurrent signals near the metal contacts. This is promising for the design of a controllable, high-performance, and low power consumption ultraviolet photodetector.

In recent years, 2D layered materials have been considered as promising photon absorption channel media for next-generation phototransistors due to their atomic thickness, easily tailored single-crystal van der Waals heterostructures, ultrafast optoelectronic characteristics, and broadband photon absorption. However, the photosensitivity obtained from such devices, even under a large bias voltage, is still unsatisfactory until now. In this paper, high-sensitivity phototransistors based on WS2 and MoS2 are proposed, designed, and fabricated with gold nanoparticles (AuNPs) embedded in the gate dielectric. These AuNPs, located between the tunneling and blocking dielectric, are found to enable efficient electron trapping in order to strongly suppress dark current. Ultralow dark current (10−11 A), high photoresponsivity (1090 A W−1), and high detectivity (3.5 × 1011 Jones) are obtained for the WS2 devices under a low source/drain and a zero gate voltage at a wavelength of 520 nm. These results demonstrate that the floating-gate memory structure is an effective configuration to achieve high-performance 2D electronic/optoelectronic devices.

Single-photon detectors that can resolve photon number play a key role in advanced quantum information technologies. Despite significant progress in improving conventional photon-counting detectors and developing novel device concepts, single-photon detectors that are capable of distinguishing incident photon number at room temperature are still very limited. We demonstrate a room-temperature photon-number-resolving detector by integrating a field-effect transistor configuration with core/shell-like nanowires. The shell serves as a photosensitive gate, shielding negative back-gated voltage, and leads to a persistent photocurrent. At room temperature, our detector is demonstrated to identify 1, 2, and 3 photon-number states with a confidence of >82%. The detection efficiency is determined to be 23%, and the dark count rate is 1.87 × 10-3 Hz. Importantly, benefiting from the anisotropic nature of 1D nanowires, the detector shows an intrinsic photon-polarization selection, which distinguishes itself from existing intensity single-photon detectors. The unique performance for the single-photon detectors based on single nanowire demonstrates the great potential for future single-photon detection applications.

One-dimensional InAs nanowires (NWs) have been widely researched in recent years. Features of high mobility and narrow bandgap reveal its great potential of optoelectronic applications. However, most reported work about InAs NW-based photodetectors is limited to the visible waveband. Although some work shows certain response for near-infrared light, the problems of large dark current and small light on/off ratio are unsolved, thus significantly restricting the detectivity. Here in this work, a novel "visible light-assisted dark-current suppressing method" is proposed for the first time to reduce the dark current and enhance the infrared photodetection of single InAs NW photodetectors. This method effectively increases the barrier height of the metal-semiconductor contact, thus significantly making the device a metal-semiconductor-metal (MSM) photodiode. These MSM photodiodes demonstrate broadband detection from less than 1 μm to more than 3 μm and a fast response of tens of microseconds. A high detectivity of ∼10

One-dimensional semiconductor nanowires (NWs) have been widely applied in photodetector due to their excellent optoelectronic characteristics. However, intrinsic carrier concentration at certain level results in appreciable dark current, which limits the detectivity of the devices. Here, we fabricated a novel type of ferroelectric-enhanced side-gated NW photodetectors. The intrinsic carriers in the NW channel can be fully depleted by the ultrahigh electrostatic field from polarization of P(VDF-TrFE) ferroelectric polymer. In this scenario, the dark current is significantly reduced and thus the sensitivity of the photodetector is increased even when the gate voltage is removed. Particularly, a single InP NW photodetector exhibits high-photoconductive gain of 4.2 × 10(5), responsivity of 2.8 × 10(5) A W(-1), and specific detectivity (D*) of 9.1 × 10(15) Jones at λ = 830 nm. To further demonstrate the universality of the configuration we also demonstrate ferroelectric polymer side-gated single CdS NW photodetectors with ultrahigh photoconductive gain of 1.2 × 10(7), responsivity of 5.2 × 10(6) A W(-1) and D* up to 1.7 × 10(18) Jones at λ = 520 nm. Overall, our work demonstrates a new approach to fabricate a controllable, full-depleted, and high-performance NW photodetector. This can inspire novel device structure design of high-performance optoelectronic devices based on semiconductor NWs.