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Your search keyword '"Dina I. Fazlizhanova"' showing total 3 results
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3 results on '"Dina I. Fazlizhanova"'

1. ReGaGe2: an intermetallic compound with semiconducting properties and localized bonding

Author

A. V. Tkachev, A. A. Gippius, Roman A. Khalaniya, Valeriy Yu. Verchenko, Maxim S. Likhanov, S. V. Zhurenko, Andrei V. Shevelkov, Alexey N. Kuznetsov, and Dina I. Fazlizhanova

Subjects
Materials science, 010405 organic chemistry, Band gap, Fermi level, Metals and Alloys, Intermetallic, General Chemistry, Electronic structure, 010402 general chemistry, 01 natural sciences, Catalysis, 0104 chemical sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Condensed Matter::Materials Science, symbols.namesake, Crystallography, Atomic orbital, Covalent bond, Materials Chemistry, Ceramics and Composites, symbols, Condensed Matter::Strongly Correlated Electrons, Mixing (physics)
Abstract

ReGaGe2 is a new member of the family of intermetallic compounds with non-metallic properties. It displays highly localized covalent bonding patterns. Its electronic structure is governed by mixing of Re d orbitals with the s and p orbitals of Ga and Ge and features the Fermi level falling into the opened band gap, ensuring experimentally confirmed semiconducting properties.

Published
2019

2. ReGaGe

Author

Maxim S, Likhanov, Roman A, Khalaniya, Valeriy Yu, Verchenko, Andrei A, Gippius, Sergei V, Zhurenko, Alexey V, Tkachev, Dina I, Fazlizhanova, Alexey N, Kuznetsov, and Andrei V, Shevelkov

Abstract

ReGaGe2 is a new member of the family of intermetallic compounds with non-metallic properties. It displays highly localized covalent bonding patterns. Its electronic structure is governed by mixing of Re d orbitals with the s and p orbitals of Ga and Ge and features the Fermi level falling into the opened band gap, ensuring experimentally confirmed semiconducting properties.

Published
2019

3. Synthesis, extended and local crystal structure, and thermoelectric properties of Fe1-xRexGa3 solid solution

Author

Dina I. Fazlizhanova, Valeriy Yu. Verchenko, S. V. Zhurenko, Maxim S. Likhanov, A. A. Gippius, David Berthebaud, Vladislav O. Zhupanov, A. V. Tkachev, Andrei V. Shevelkov, Lomonosov Moscow State University (MSU), National Institute of Chemical Physics and Biophysics = Keemilise ja bioloogilise füüsika instituut [Estonie] (NICPB | KBFI), P. N. Lebedev Physical Institute of the Russian Academy of Sciences [Moscow] (LPI RAS), Russian Academy of Sciences [Moscow] (RAS), Laboratoire de cristallographie et sciences des matériaux (CRISMAT), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Российский Фонд Фундаментальных Исследований (РФФИ), RFBR 17-03-00111, 16-53-52012, Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Université de Caen Normandie (UNICAEN), Normandie Université (NU), Laboratoire de Microélectronique et de Physique des Semiconducteurs (LaMIPS), and Normandie Université (NU)-NXP Semiconductors [France]

Subjects
Materials science, Intermetallics, Solid solution, Band gap, 02 engineering and technology, Crystal structure, Conductivity, NQR spectroscopy, 010402 general chemistry, 01 natural sciences, Thermoelectric effect, Materials Chemistry, [CHIM.CRIS]Chemical Sciences/Cristallography, [CHIM]Chemical Sciences, ComputingMilieux_MISCELLANEOUS, business.industry, Mechanical Engineering, Thermoelectric, Metals and Alloys, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, 0104 chemical sciences, [CHIM.THEO]Chemical Sciences/Theoretical and/or physical chemistry, Semiconductor, Rhenium, Mechanics of Materials, Chemical physics, Charge carrier, 0210 nano-technology, Valence electron, business
Abstract

International audience; We present a new Fe1–xRexGa3 solid solution, in which a 5d-metal––rhenium––partially substitutes for iron to the limiting composition of x = 0.10. The crystal structure refined for the composition Fe0.91Re0.09Ga3 shows the expected increase in the unit cell parameters compared to the parent FeGa3 compound, however the M–M (M = Fe, Re) distance decreases within the M–M dumbbell, indicating an increased M–M bonding density. Therein, investigation of the local structure by means of 69,71Ga NQR spectroscopy revealed the formation of homonuclear Fe–Fe and Re–Re dumbbells. Transport and thermoelectric properties have been investigated for the Re-substituted FeGa3. Electrical transport measurements showed preservation of the nonmetallic conductivity of Fe1–xRexGa3 despite the decrease of the valence electron concentration from 17 to 16.9 electrons per formula. At low temperatures, Fe1–xRexGa3 is a p-type semiconductor with the band gap of 0.4 eV, but with increasing temperature the sign of the dominant charge carriers changes. Owing to the alloying effect, Fe1–xRexGa3 displays 1.5 times lower thermal conductivity than FeGa3, which increases at high temperatures because of the growing contribution of the electronic term. © 2019

Published
2019

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