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Abstract As promising candidates for solar cell and photodetection applications in the range 1.0–1.16 eV, the growth of dilute nitride GaAsSbN alloys lattice matched to GaAs is studied. With this aim, we have taken advantage of the temperature gradient in the molecular beam epitaxy reactor to analyse the impact of temperature on the incorporation of Sb and N species according to the wafer radial composition gradients. The results from the combination of X-ray diffraction (XRD) and energy-dispersive X-ray spectroscopies (EDS) show an opposite rate of incorporation between N and Sb as we move away from the centre of the wafer. A competitive behaviour between Sb and N in order to occupy the group-V position is observed that depends on the growth rate and the substrate temperature. The optical properties obtained by photoluminescence are discussed in the frame of the double-band anticrossing model. The growth conditions define two sets of different parameters for the energy level and the coupling interaction potential of N, which must be taken into account in the search for the optimum compositions 1–1.15-eV photonic applications.

As promising candidates for solar cell and photodetection applications in the range 1.0-1.16 eV, the growth of dilute nitride GaAsSbN alloys lattice matched to GaAs is studied. With this aim, we have taken advantage of the temperature gradient in the molecular beam epitaxy reactor to analyse the impact of temperature on the incorporation of Sb and N species according to the wafer radial composition gradients. The results from the combination of X-ray diffraction (XRD) and energy-dispersive X-ray spectroscopies (EDS) show an opposite rate of incorporation between N and Sb as we move away from the centre of the wafer. A competitive behaviour between Sb and N in order to occupy the group-V position is observed that depends on the growth rate and the substrate temperature. The optical properties obtained by photoluminescence are discussed in the frame of the double-band anticrossing model. The growth conditions define two sets of different parameters for the energy level and the coupling interaction potential of N, which must be taken into account in the search for the optimum compositions 1-1.15-eV photonic applications. [ABSTRACT FROM AUTHOR]

Recently, the quaternary InGaAsN alloy system has attracted a great deal of attention due to its potential application in devices such as next generation multi-junction solar cells and optoelectronic devices for example laser diodes for optical communications in IR region. In this paper, we have investigated the role of nitrogen on the improvement of optical efficiency in InGaNAs nanostructures by photoluminescence spectroscopy. These characterizations are because of variation of InGaNAs band structure due to existence of nitrogen, and could be explained by using band anticrossing model which is a result of interaction between the extended conduction band of the InGaAs matrix (EM) and the nitrogen-related localized level (EN). The band-gap of InGaNAs is very sensitive to the nitrogen content, so it has decreased by increasing of nitrogen content. Therefore accessibility to emission light wavelength at IR region is controllable. Moreover, nitrogen has created the potential fluctuations in the InGaNAs so it is the cause of trap centers that leads to localized excitons. Thus the probability of exciton recombination has increased and improved optical efficiency of these structures. But in other cases, nitrogen has made fluctuations especially in the common surface of the well and barrier in InGaNAs quantum structures so they increase non-radiative recombination.

Contrary to the conventional empirical law, band gap of the dilute nitride semiconductors decreases with increasing nitrogen concentration. In spite of a number of investigations, the origin of this “large band gap bowing” is still under debate. In order to elucidate this phenomenon, we investigate change of the band edge energy of GaN x As 1 − x due to nitrogen by using the perturbation theory. We found that energy shift of the conduction band edge is arising from intervalley mixing between the Γ - and L-states and/or Γ - and X-states mainly induced by displacement of Ga atoms around nitrogen. The valence band edge state shows upward shift in spite of negative potential of nitrogen. These results are well understood from symmetry of the wavefunctions and the perturbation potential. [ABSTRACT FROM AUTHOR]