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140 results on '"Dierickx, B."'

1. Enhanced dark current generation in proton-irradiated CMOS active pixel sensors

Author

Bogaerts, J., Dierickx, B., and Mertens, R.

Subjects
Complementary metal oxide semiconductors -- Testing, Substitution reactions -- Research, Business, Electronics, Electronics and electrical industries
Abstract

The dark current increase due to proton-induced displacement damage is studied in a standard and a radiation-hardened CMOS active pixel sensor (APS). Several devices have been irradiated with protons of different energies and fluences. The influence of the proton energy and fluence on the mean dark current increase and the dark current nonuniformity is investigated. Dark current density histograms are obtained by the theory based on collision kinematics. They are determined by the number of elastic and inelastic collisions and the damage these interactions create in the pixel sensitive volume. It is shown that field enhanced emission has to be taken into account to predict accurately the distribution of the dark current density increase. We also compare the results with data found in literature for charge coupled devices (CCD) and charge injection devices (CID). Index Terms--CMOS active pixel sensor (APS), displacement damage, enhanced generation.

Published
2002

2. Random telegraph signals in a radiation-hardened CMOS active pixel sensor

Author

Bogaerts, J., Dierickx, B., and Mertens, R.

Subjects
Nuclear research -- Analysis, Complementary metal oxide semiconductors -- Analysis, Business, Electronics, Electronics and electrical industries
Abstract

The random telegraph signal (RTS) behavior of the dark current has been studied in a radiation-hardened CMOS active pixel sensor (APS). Several devices have been irradiated with protons of different energies and up to different fluences. The influence of the proton energy, fluence, and operating temperature on the amplitude, time constants, and occurrence of the RTS is investigated. Mechanisms for this behavior are discussed and several suggestions are made for possible defect types. Index Terms--CMOS active pixel sensor (APS), displacement damage, random telegraph signal (RTS).

Published
2002

5. Integration of CMOS-electronics and particle detector diodes in high-resistivity silicon-on-insulator wafers

Author

Dierickx, B., Wouters, D., Willems, G., Alaerts, A., Debusschre, I., Simoen, E., Vlummens, J., Akimoto, H., Claeys, C., Maes, H., Hermans, L., Heijne, E.H.M., Jarron, P., Anghinolfi, F., Campbell, M., Pengg, F.X., Aspell, P., Bosisio, L., Focardi, E., Forti, F., Kashigin, S., Mekkaoui, A., Habrard, M.C., Sauvage, D., and Delpierre, P.

Subjects
Complementary metal oxide semiconductors -- Research, Detectors -- Research, Silicon-on-isolator -- Research, Business, Electronics, Electronics and electrical industries
Abstract

A new approach to monolithic pixel detectors, based on SOI wafers with high resistivity substrate, is being pursued by the CERN RD19 collaboration. This paper reports on the used fabrication methods, and on the results of the electrical evaluation of the SOI - MOSFET devices and of the detector structures fabricated in the bulk. The leakage current of the high-resistivity PIN-diodes was kept in the order of 5 to 10 nA/|cm.sup.2~. The SOI preparation processes considered (SIMOX and ZMR) produced working electronic circuits and appear to be compatible with the fabrication of detectors of suitable quality.

Published
1993

6. A study of the kink-related excess low-frequency noise in silicon-on-insulator n-metal-oxide-semiconductor transistors operated at liquid helium temperatures

Author

Simoen, E., Dierickx, B., and Claeys, C.

Subjects
Electromagnetic noise -- Research, Metal oxide semiconductors -- Research, Physics
Abstract

The kink-related excess low-frequency noise in silicon-on-insulator n-metal-oxide-semiconductor transistors operated at liquid helium temperatures was investigated. The results showed that excess noise introduced a Lorentzian generation-recombination component in the low frequency noise spectrum. The noise was caused by ionization and capture in the depletion region of carriers.

Published
1992

7. A 1006 element hybrid silicon pixel detector with strobed binary output

Author

Anghinolfi, F., Aspell, P., Bass, K., Beusch, W., Bosisio, L., Boutonnet, C., Burger, P., Campbell, M., Chesi, E., Claeys, C., Clemens, J.C., CohenSolal, M., Debusschere, I., Delpierre, P., Di Bari, D., Dierickx, B., Enz, C.C., Focardi, E., Forti, F., Gally, Y., Glaser, M., Gys, T., Habrard, M.C., Heijne, E.H.M., and Hermans, L.

Subjects
Silicon diodes -- Research, Semiconductor chips -- Research, Business, Electronics, Electronics and electrical industries
Abstract

A readout chip implemented in an array with 16 columns at 500 micrometers pitch and 63 rows at 75 micrometer pitch was studied. The chip was bonded with solder bumps to a silicon detector with matching pixel elements. A trigger signal strobes event information in a pixel which allows it to be read out. This process cannot be done in the absence of a strobe. The hybrid detector has been tested and found to be sufficiently effective.

Published
1992

10. Hyperspectral CMOS imager

Author

Jerram, P. A., primary, Dierickx, B., primary, Fryer, M., primary, Pratlong, J., primary, Pike, A., primary, Walker, Alex, primary, Dupont, B., primary, and Defernez, A., primary

Published
2017
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11. The behavior of silicon p-n junction-based devices at liquid helium temperatures.

Author

Simoen, E., Dierickx, B., Deferm, L., and Claeys, C.

Subjects
*SILICON diodes, *LIQUID helium, *LOW temperatures, *SEMICONDUCTORS
Abstract

Focuses on a study which investigated the forward current-voltage characteristics of silicon positive to negative junction diodes at liquid helium temperatures (LHT). Challenges in operating semiconductor system at LHT; Interface-related breakdown and injection; Implications for other devices.

Published
1991
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18. The decrease of 'random telegraph signal' noise in metal-oxide-semiconductorfield-effect transistors when cycled from inversion to accumulation

Author

Dierickx, B. and Simoen, E.

Subjects
Electromagnetic noise -- Research, Physics
Abstract

The low-frequency noise behavior of metal-oxide-semiconductor field-effect transistors cycled between inversion and accumulation was investigated. The results showed that systematic decrease of low-frquency noise occurred on large-area devices, and the noise found in small-area devices was observed to disappear when the transistor was cycled into accumulation. The decrease in thenoise was attributed to the fact that random telegraph signals no longer add tothe noise of the system.

Published
1992

19. RD19: status report on 1993 development of hybrid and monolithic silicon micropattern detectors

Author

Anghinolfi, Francis, Antinori, Federico, Beker, H, Barberis, D, Bass, K, Batignani, G, Beutsch, W, Bonvicini, V, Bonzom, V, Bosisio, L, Boutonnet, C, Burger, P, Campbell, M, Cantoni, P, Catanesi, M G, Chesi, Enrico Guido, Claeys, C, Clemens, J C, Cohen-Solal, N, Darbo, G, Da Silva, J C, Da Vià, C, Debusschere, I, Delpierre, P A, Di Bari, D, Di Liberto, S, Dierickx, B, Elia, D, Enz, C C, Focardi, E, Forti, F, Gally, Y, Glaser, M, Gys, Thierry, Habrard, M C, Hallewell, G D, Heijne, Erik H M, Hermans, L, Heuser, J M, Inzani, P, Jacholkowski, A, Jaeger, J J, Jakubek, J, Jarron, P, Jirousek, P, Kersten, S, Krummenacher, F, Leitner, R, Lemeilleur, F, Lenti, V, Letheren, M F, Lokajícek, M, López, L, Loukas, D, Lo Vetere, M, MacDermott, M, Maggi, G, Manzari, V, Martinengo, P, Meddeler, G, Meddi, F, Mekkaoui, A, Middelkamp, P, Morando, M, Munns, A, Musico, P, Nava, P, Navach, F, Pallavicini, M, Pellegrini, F, Pengg, F X, Pindo, M, Pospísil, S, Potheau, R, Quercigh, Emanuele, Redaelli, N G, Rídky, J, Rossi, L, Safarík, K, Sauvage, D, Segato, G F, Severi, F, Simone, S, Smith, K, Sopko, B, Stefanini, G, Tempesta, P, Tonelli, G, Vegni, G, Verweij, H, Viertel, Gert M, Vrba, V, Waisbard, J, Damoiseaux, Magali, Centre de Physique des Particules de Marseille (CPPM), Aix Marseille Université (AMU)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), and RD19

Subjects
[PHYS.PHYS.PHYS-INS-DET] Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], Detectors and Experimental Techniques
Published
1994

22. RD19: status report and addendum. Development of hybrid and monolithic silicon micropattern detectors

Author

Heijne, Erik H. M., Anghinolfi, F., Antinori, F., Beker, H., Bass, K., Batignani, G., Beusch, W., Bonvicini, C., Bosisio, L., Bostjancic, B., Boutonnet, C., Burger, P., Campbell, M., Cantoni, P., Catanesi, M. G., Chesi, E., Vladimir Cindro, Claeys, C., Clemens, J. C., Cohen Solal, M., Darbo, G., Da Via, C., Debusschere, I., Delpierre, P., Di Bari, D., Di Liberto, S., Dierickx, B., Enz, C. C., Focardi, E., Forti, F., Gally, Y., Glaser, M., Gys, T., Habrard, M. C., Hallewell, G., Hermans, L., Heuser, J., Hurst, R., Inzani, P., Jaeger, J. J., Jarron, P., Karttaavi, T., Kersten, S., Krummenacher, F., Leitner, R., Lemeilleur, F., Lenti, V., Lokajicek, M., Loukas, D., Macdermott, M., Maggi, G., Manzari, V., Martinengo, P., Meddeler, Gerrit Jan, Meddi, F., Mekkaoui, A., Menetrey, A., Middelkamp, P., Morando, M., Munns, A., Muscio, P., Nava, P., Navach, F., Neyer, C., Pellegrini, F., Pengg, F., Perego, R., Pindo, M., Pospisil, S., Potheau, R., Quercigh, E., Redaelli, Nicola Giuseppe, Ridky, J., Rossi, L., Sauvage, D., Segato, G., Simone, S., Sopko, B., Stefanini, G., Strakos, V., Tempesta, P., Tonelli, G., Vegni, G., Verweij, H., Viertel, G. M., Vrba, V., Waisbard, J., Centre de Physique des Particules de Marseille (CPPM), Aix Marseille Université (AMU)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), RD19, and Damoiseaux, Magali

Subjects
[PHYS.PHYS.PHYS-INS-DET] Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], Detectors and Experimental Techniques
Published
1993

25. Development of hybrid and monolithic silicon micropattern detectors: status report RD19

Author

Heijne, Erik H M, Anghinolfi, Francis, Aspell, P, Bass, K, Beusch, Werner, Bisisio, L, Boutonnet, C, Burger, P, Campbell, M, Chesi, Enrico Guido, Claeys, C, Clemens, J C, Cohen-Solal, M, Debusschere, I, Delpierre, P A, Di Bari, D, Dierickx, B, Enz, C C, Focardi, E, Forti, F, Gally, Y, Glaser, M, Gys, Thierry, Habrard, M C, Hermans, L, Hurst, R B, Inzani, P, Jaeger, J J, Jarron, Pierre, Krummenacher, F, Lemeilleur, F, Lenti, V, Manzari, V, Meddeler, G, Morando, M, Munns, A, Nava, F, Navach, F, Neyer, C, Ottaviani, G, Pellegrini, F, Pengg, F X, Perego, R, Pindo, M, Potheau, R, Quercigh, Emanuele, Redaelli, N G, Rassi, L, Sauvage, D, Segato, G F, Simone, S, Stefanini, G, Tonelli, G, Vanstraelen, G, Vegni, G, Verweij, H, Viertel, Gert M, and Waisbard, J

Subjects
Detectors and Experimental Techniques
Published
1991

26. R&D proposal: development of hybrid and monolithic silicon micropattern detectors

Author

Beusch, Werner, Campbell, M, Chesi, Enrico Guido, Glaser, M, Heijne, Erik H M, Jarron, Pierre, Lemeilleur, F, Quercigh, Emanuele, Boutonnet, C, Delpierre, P A, Jaeger, J J, Karar, A, Enz, C, Krummenacher, F, Neyer, C, Viertel, Gert M, Hurst, R B, Rossi, L, Debusschere, I, Dierickx, B, Hermans, L, Vanstraelen, G, Clemens, J C, Cohen-Solal, M, Potheau, R, Sauvage, D, Redaelli, N G, Vegni, G, Nava, F, Ottaviani, G, Bosisio, L, Focardi, L, Forti, F, and Tonelli, G

Subjects
Physics::Instrumentation and Detectors, High Energy Physics::Experiment, Detectors and Experimental Techniques
Abstract

A collaborative effort is proposed to continue the development, which started in the framework of the CERN-LAA project, of a true 2-dimensional semiconductor particle detector with micrometric precision and with on-chip signal processing, a so called micropattern or pixel detector, for use in high luminosity colliders like the LHC. Different institutes will pursue in a complementary way both the hybrid approach and the monolithic approach. If the Silicon-On- Insulator (SOI) technology can be shown to be effective, both approaches could merge into a single effort. The first experimental devices can be tailored to serve intermediate physics experiments with fixed target or at the LEP collider, thus verifying the feasibility of the pixel detector technology.

Published
1990

36. Development of silicon micropattern pixel detectors

Author

Heijne, E.H.M., primary, Antinori, F., additional, Beker, H., additional, Batignani, G., additional, Beusch, W., additional, Bonvicini, V., additional, Bosisio, L., additional, Boutonnet, C., additional, Burger, P., additional, Campbell, M., additional, Cantoni, P., additional, Catanesi, M.G., additional, Chesi, E., additional, Claeys, C., additional, Clemens, J.C., additional, Cohen Solal, M., additional, Darbo, G., additional, Da Via, C., additional, Debusschere, I., additional, Delpierre, P., additional, Di Bari, D., additional, Di Liberto, S., additional, Dierickx, B., additional, Enz, C.C., additional, Focardi, E., additional, Forti, F., additional, Gally, Y., additional, Glaser, M., additional, Gys, T., additional, Habrard, M.C., additional, Hallewell, G., additional, Hermans, L., additional, Heuser, J., additional, Hurst, R., additional, Inzani, P., additional, Jæger, J.J., additional, Jarron, P., additional, Karttaavi, T., additional, Kersten, S., additional, Krummenacher, F., additional, Leitner, R., additional, Lemeilleur, F., additional, Lenti, V., additional, Letheren, M., additional, Lokajicek, M., additional, Loukas, D., additional, Macdermott, M., additional, Maggi, G., additional, Manzari, V., additional, Martinengo, P., additional, Meddeler, G., additional, Meddi, F., additional, Mekkaoui, A., additional, Menetrey, A., additional, Middelkamp, P., additional, Morando, M., additional, Munns, A., additional, Musico, P., additional, Nava, P., additional, Navach, F., additional, Neyer, C., additional, Pellegrini, F., additional, Pengg, F., additional, Perego, R., additional, Pindo, M., additional, Pospisil, S., additional, Potheau, R., additional, Quercigh, E., additional, Redaelli, N., additional, Ridky, J., additional, Rossi, L., additional, Sauvage, D., additional, Segato, G., additional, Simone, S., additional, Sopko, B., additional, Stefanini, G., additional, Strakos, V., additional, Tempesta, P., additional, Tonelli, G., additional, Vegni, G., additional, Verweij, H., additional, Viertel, G.M., additional, Vrba, V., additional, and Waisbard, J., additional

Published
1994
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47. Development of silicon micropattern (pixel) detectors

Author

Delpierre, P., primary, Beusch, W., additional, Bosisio, L., additional, Boutonnet, C., additional, Campbell, M., additional, Chesi, E., additional, Clemens, J.C., additional, Cohen-Solal, M., additional, Debusschere, I., additional, Dierickx, B., additional, Enz, C., additional, Focardi, E., additional, Forti, F., additional, Glaser, M., additional, Heijne, E., additional, Hermans, L., additional, Hurst, R., additional, Karar, A., additional, Krummenacher, F., additional, Jaeger, J.J., additional, Jarron, P., additional, Lemeilleur, F., additional, Nava, F., additional, Neyer, C., additional, Ottaviani, G., additional, Potheau, R., additional, Quercigh, E., additional, Redaelli, N., additional, Rossi, L., additional, Sauvage, D., additional, Tonelli, G., additional, Vanstraelen, G., additional, Vegni, G., additional, Viertel, G., additional, and Waisbard, J., additional

Published
1992
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