1. Influence of thermal annealing on the properties of proton implanted diamond waveguides.
- Author
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Jin, Huining and Bettiol, Andrew A.
- Subjects
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THERMAL properties , *WAVEGUIDES , *DIAMOND crystals , *PROTON beams , *DIAMONDS , *ELECTRON field emission , *RAMAN effect - Abstract
We have studied guiding performance of 2-MeV proton implanted diamond waveguides as a function of implantation fluence and annealing temperature. Raman spectra show that the change in refractive index (Δ n ˜) cannot be ascribed to any single defect. Instead, the normalized intensity of the 1332 cm−1 Raman line (I Raman) has been adopted as a generic parameter to quantify the structural damage caused by implantation. I Raman is experimentally shown to be an indicator of guiding performance. Of all the fabrication conditions, I Raman = 0. 27 in the guiding region produces the largest transmission and is achieved by implantation at fluence of 1 × 1016 cm−2 followed by annealing at 600℃. Experimental observations have been supported by the reconstruction of mode profiles with finite element simulation using I Raman. A single linear relationship of Δ n ˜ = (6. 1 + 8. 5 i) × 10−3 ⋅ (1 − I Raman) is employed to simulate all of the experimental mode profiles. Our use of proton beam writing and the measured I Raman is a potential technique to design and manufacture light-guiding structures directly in bulk single crystal diamond. Image 1 [ABSTRACT FROM AUTHOR]
- Published
- 2021
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