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This paper reports the improvement of electrical, ferroelectric and endurance of Hf0.5Zr0.5O2 (HZO) thin-film capacitors by implementing W electrode. The W/HZO/W capacitor shows excellent pristine 2Pr values of 45.1 μC/cm2 at ±6 V, which are much higher than those of TiN/HZO/W (34.4 μC/cm2) and W/HZO/TiN (26.9 μC/cm2) capacitors. Notably, the maximum initial 2Pr value of W/HZO/W capacitor can reach as high as 57.9 μC/cm2 at ±7.5 V. These strong ferroelectric polarization effects are ascribed to the W electrode with a fairly low thermal expansion coefficient which provides a larger in-plane tensile strain compared with TiN electrode, allowing for enhancement of o-phase formation. Moreover, the W/HZO/W capacitor also exhibits higher endurance, smaller wake-up effect (10.1%) and superior fatigue properties up to 1.5 × 1010cycles compared to the TiN/HZO/W and W/HZO/TiN capacitors. Such improvements of W/HZO/W capacitor are mainly due to the decreased leakage current by more than an order of magnitude compared to the W/HZO/TiN capacitor. These results demonstrate that capping electrode material plays an important role in the enhancement of o-phase formation, reduces oxygen vacancies, mitigates wake-up effect and improves reliability.

Recently, there is a surge of research interest in configurable ferroelectric conductive domain walls which have been considered as possible fundamental building blocks for future electronic devices. In this work, by using piezoresponse force microscopy and conductive atomic force microscopy, we demonstrated the controlled manipulation of various conductive domain walls in epitaxial BiFeO3 thin films, e.g. neutral domain walls (NDW) and charged domain walls (CDWs). More interestingly, a specific type of nanoscale domains was also identified, which are surrounded by highly conductive circular CWDs. Similar nanoscale domains can also be controlled created and erasured by applying local field via conductive probe, which allow nondestructive current readout of different domain states with a large on/off resistance ratio up to 102. The results indicate the potential to design and develop high-density non-volatile ferroelectric memories by utilizing these programable conductive nanoscale domain walls.

A pole‐converging X‐band low‐noise amplifier (LNA) using 130 nm CMOS technology is proposed. An on‐chip pole‐converging capacitor CPC is added between the gate and drain node of the common‐gate (CG) stage. The capacitor CPC combines with a noise‐reducing inductor L1 to converge poles into the desired band, which results in a pole‐converging effect and wideband performance. The proposed modified broadband simultaneous noise and input‐matching technique is adopted in triple‐cascode configuration to realize good input matching and a low noise figure (NF). Measurement results exhibit a flat maximum power gain of 17.6 dB from 8 to 12 GHz and a reverse isolation over 60 dB within the desired bandwidth along with an NF ranging from 1.5 to 3.6 dB. The LNA core dissipates 17 mW from 2.4 V supply, and the chip size occupies 1.1 × 0.9 mm2 including all pads. The simulated and measured results show good agreement from 8 to 12 GHz.

Compared to electrochemical energy storage, dielectric thin film-based capacitors possess the advantages of higher voltage stability and higher break-down voltage as well as lower leakage current etc. Since HfO2 films are compatible to microelectronic process and its ferroelectricity is strategically important in memory device, the realization of their excellent energy storage comparable or better than those perovskite oxides will broaden their applications in microelectronic devices. In this work, to combine the merits of relaxor-ferroelectric and antiferroelectric, we experimentally demonstrate that a superparaelectric-like relaxor antiferroelectric behavior can be realized in the HfO2-based thin films and corresponding recoverable energy density over 100 J cm-3 can be achieved at efficiency higher than 80% as well as extremely high dielectric strength > 6 MV cm-1, compared to perovskite oxide materials. This is a record high energy density in all reported HfO2-based energy storage thin films, and beyond that, we also demonstrate their superfast charging/discharging as a capacitor. Targeting at high-speed supercapacitor applications in integrated circuit, HfO2-based dielectric may win the competition with perovskite oxides in terms of dielectric breakdown strength and charging/discharging speed etc. Our fundamental understanding of the physics behind also enriches the knowledge of materials science and dielectric physics.

FeCo thin films with high saturation magnetization (4 πMs) can be applied in high-frequency electronic devices such as thin film inductors and microwave noise suppressors. However, due to its large magnetocrystalline anisotropy constant and magnetostrictive coefficient of FeCo, the coercivity (Hc) of FeCo films is generally high, which is detrimental to the soft magnetic properties. Meanwhile, the thickness and deposition temperature have significant effects on the coercivity and saturation magnetization of FeCo films. In this paper, FeCo thin films with different thicknesses were prepared by magnetron sputtering at different temperatures. The effects of thickness and deposition temperature on the microstructure and magnetic properties of FeCo thin films were systematically studied. When the film thickness increases from 50 nm to 800 nm, the coercivity would decrease from 309 Oe to 160 Oe. However, the saturation magnetization decreases from 22.1 kG to 15.3 kG. After that, we try to further increase the deposition temperature from room temperature (RT) to 475 °C. It is intriguing to find that the coercivity greatly decreased from 160 Oe to 3 Oe (decreased by 98%), and the saturation magnetization increased from 15.3 kG to 23.5 kG (increased by 53%) for the film with thickness of 800 nm. For the film with thickness of 50 nm, the coercivity also greatly decreased from 309 Oe to 10 Oe (decreased by 96%), but the saturation magnetization did not change significantly. It is contributed to the increase of deposition temperature, which will lead to the increase of grain size and the decrease of the number of grain boundaries. And the coercivity decreases as the number of grain boundaries decreases. Meanwhile, for the thicker films, when increasing the deposition temperature the thermal stress increases, which changes the appearance of (200) texture, and the saturation magnetization increases. Whereas, it has a negligible effect on the orientation of thin films with small thickness (50 nm). This indicates that high-temperature deposition is beneficial to the soft magnetic properties of FeCo thin films, particularly for the films with larger thickness. This FeCo thin film with high saturation magnetization and low coercivity could be an ideal candidate for high-frequency electronic devices.

In this work, a ReRAM-based energy-efficient CIM accelerator is presented with two techniques for edge AI applications. Firstly, a circuit-algorithm co-design scheme is proposed to realize fully analog processing, which improves the energy efficiency and the throughput of neural network. To deal with the I-V nonlinearity of ReRAM, a nonlinear-aware training algorithm is proposed to improve the network accuracy. Secondly, a 1T2R cell is proposed to replace previous 2T2R for weight storage with 35% area saving. For evaluation, a neural network with two fully connected layers and one ReLU layer is built for the MNIST dataset. The error rate can be reduced by >46% and the energy efficiency is 99 TOPS/W@200 MHz, 2.6X improvement over the digital method.

Ferroelectrics with negative capacitance effect can amplify the gate voltage in field-effect transistors to achieve low power operation beyond the limits of the Boltzmann's Tyranny. The reduction of power consumption depends on the capacitance matching between the ferroelectric layer and gate dielectrics, which can be well controlled by adjusting the negative capacitance effect in the ferroelectrics. However, it is a great challenge to experimentally tune the negative capacitance effect. Here, the observation of tunable negative capacitance effect in ferroelectric KNbO3 through strain engineering is demonstrated. The magnitude of the voltage reduction and negative slope in polarization-electric field (P-E) curves as the symbol of negative capacitance effect can be controlled by imposing various epitaxial compressive strain. The expansion of negative curvature region in polarization-energy landscape under compressive strain is responsible for the tunable negative capacitance. Our work paves the way for fabricating low power devices and further reducing energy consumption in electronics.

When scaling the lateral size of a ferroelectric random access memory (FeRAM) device down to the nanometer range, the polarization switching-induced displacement current becomes small and challenging to detect, which greatly limits the storage density of FeRAM. Here, we report the observation of significantly enhanced injection currents, much larger than typical switching currents, induced by polarization switching in BiFeO3 thin films via conductive atomic force microscopy. Interestingly, this injected current can be effectively modulated by applying mechanical force. As the loading force increases from ∼50 to ∼750 nN, the magnitude of the injected current increases and the critical voltage to trigger the current injection decreases. Notably, changing the loading force by an order of magnitude increases the peak current by 2-3 orders of magnitude. The mechanically boosted injected current could be useful for the development of high-density FeRAM devices. The mechanical modulation of the injected current may be attributed to the mechanical force-induced changes in the barrier height and interfacial layer width.

Precise control of ferroelectric and multiferroic domain states at the nanoscale is of considerable interest due to the potential to boost the development of next-generation low-energy-consumption ...

Summary The limitation of commercial single-crystal substrates and the lack of continuous strain tunability preclude the ability to take full advantage of strain engineering for further exploring novel properties and exhaustively studying fundamental physics in complex oxides. Here, we report an approach for imposing continuously tunable epitaxial strain in oxide heterostructures beyond substrate limitations by inserting an interface layer through tailoring of its gradual strain relaxation. Taking BiFeO3 as a model system, we demonstrate the introduction of an ultrathin interface layer that allows the creation of desired strain states that can induce phase transition and stabilize a super-tetragonal phase as well as morphotropic phase boundaries, overcoming substrate limitations. Continuously tunable strain from tension to compression can be generated by precisely adjusting the interface layer thickness, enabling the achievement of continuous orthorhombic–rhombohedral-like–tetragonal-like phase transition. This proposed route could be extended to other oxide heterostructures, providing a platform for creating exotic phases and emergent phenomena.

BiFeO3, a single-phase multiferroic material, possesses several polymorphs and exhibits a strong sensitivity to strain. Recently, emergent strain engineering in BiFeO3 thin films has attracted intense interest, which can overcome the confines of traditional strain engineering introduced through the mismatch between the film and substrate. In this review, we discuss emerging non-traditional strain engineering approaches to create new ground states and manipulate novel functionalities in multiferroic BiFeO3 thin films. Through fabricating freestanding thin films, inserting an interface layer or utilizing thermal expansion mismatch, continuously tunable strain can be imposed beyond substrate limitations. Nanostructured evolution and defect introduction are discussed as efficient routes to introduce strain, promising for the development of new nanodevices. Ultrafast optical excitation, growth conditions and chemical doping driven strain are summarized as well. We hope this review will arouse the readers’ interest in this fascinating field.

In this article, a novel low-power notch-enhanced active filter is presented using the feedback notch-enhanced (FNE) technique. The active notch filter is proposed based on an area-saving second-order $LC$ series resonator. The passive devices’ loss can be effectively eliminated by the generated dc power-independent negative resistance by inserting a current feedback transistor. Moreover, the capacitive source degeneration (CSD) technique is proposed to boost the filter $Q$ by shifting the series resonant frequency to the negative-resistance region. To demonstrate the feasibility and practicability of the proposed notch filter, a 3.1–10.6-GHz IEEE 802.11a interferer rejected low-noise amplifier (IR-LNA) is fabricated in a 0.13- $\mu {\hbox {m}}$ CMOS process. The multistage structure, consisting of a common-gate (CG) stage with a dual-resonance load and a cascode stage with the proposed active notch filter, is employed for wideband input matching, gain flatness, and interferer rejection (IR) simultaneously. The measurements show that the IR-LNA provides a maximum of 16.05-dB power gain, 2.08–3.70-dB noise figure (NF) in the desired band, and a maximum of 40.9-dB IR ratio (IRR) at 5.77 GHz, with a power consumption of 10.2 mW, while the active notch filter only consumes 456- $\mu {\hbox {A}}$ current.

Exotic topological domains in BiFeO3 nanoislands have attracted much attention regarding their potential applications in advanced electronic devices. Here, different from the earlier reported disordered distributed BiFeO3 nanoislands formed by a self-assembly method, we fabricated an ordered BiFeO3 nanoisland array by mask-assisted pulsed laser deposition on a SrTiO3 substrate, which exhibits a center-converged in-plane polarization component and a monodomain pattern along the vertical direction. Such center-type quad-domain structures exhibit high stability, maintaining their topological structures after heating to 250 °C and subsequently cooling to room temperature. Moreover, they can be switched by applying a scanning electric field and recovered by applying a heating and cooling process. Observing this topological structure in BiFeO3 nanoislands might provide a suitable platform for further exploration of its topological phase transition properties, new functions, and potential applications.

Dielectric capacitors are widely used in pulsed power electronic devices due to their ultrahigh power densities and extremely fast charge/discharge speed. To achieve enhanced energy storage density, maximum polarization (Pmax) and breakdown strength (Eb) need to be improved simultaneously. However, these two key parameters are inversely correlated. In this study, order–disorder transition induced polar nanoregions have been achieved in PbZrO3 thin films by making use of the low-energy ion implantation, enabling us to overcome the trade-off between high polarizability and breakdown strength, which leads to the tripling of the energy storage density from 20.5 to 62.3 J/cm3 as well as the great enhancement of breakdown strength. This approach could be extended to other dielectric oxides to improve the energy storage performance, providing a new pathway for tailoring the oxide functionalities.

Ferroelectric topological objects (e.g. vortices, skyrmions) provide a fertile ground for exploring emerging physical properties that could potentially be utilized in future configurable nanoelectronic devices. Here, we demonstrate quasi-one-dimensional metallic high conduction channels along two types of exotic topological defects, i.e. the topological cores of (i) a quadrant vortex domain structure and (ii) a center domain (monopole-like) structure confined in high quality BiFeO3 nanoisland array, abbreviated as the vortex core and the center core. We unveil via phase-field simulations that the superfine (< 3 nm) metallic conduction channels along center cores arise from the screening charge carriers confined at the core whereas the high conductance of vortex cores results from a field-induced twisted state. These conducting channels can be repeatedly and reversibly created and deleted by manipulating the two topological states via an electric field, leading to an apparent electroresistance effect with an on/off ratio higher than 103. These results open up the possibility of utilizing these functional one-dimensional topological objects in high-density nanoelectronic devices such as ultrahigh density nonvolatile memory., manuscript (21 pages, 4 figures) plus supplementary information

Nowadays the development of machine vision is oriented toward real-time applications such as autonomous driving. This demands a hardware solution with low latency, high energy efficiency, and good reliability. Here, we demonstrate a robust and self-powered in-sensor computing paradigm with a ferroelectric photosensor network (FE-PS-NET). The FE-PS-NET, constituted by ferroelectric photosensors (FE-PSs) with tunable photoresponsivities, is capable of simultaneously capturing and processing images. In each FE-PS, self-powered photovoltaic responses, modulated by remanent polarization of an epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 layer, show not only multiple nonvolatile levels but also sign reversibility, enabling the representation of a signed weight in a single device and hence reducing the hardware overhead for network construction. With multiple FE-PSs wired together, the FE-PS-NET acts on its own as an artificial neural network. In situ multiply-accumulate operation between an input image and a stored photoresponsivity matrix is demonstrated in the FE-PS-NET. Moreover, the FE-PS-NET is faultlessly competent for real-time image processing functionalities, including binary classification between ‘X’ and ‘T’ patterns with 100% accuracy and edge detection for an arrow sign with an F-Measure of 1 (under 365 nm ultraviolet light). This study highlights the great potential of ferroelectric photovoltaics as the hardware basis of real-time machine vision.

A capping layer is known to be critical for stabilizing the ferroelectric (FE) orthorhombic phase (o-phase) in a HfO2-based thin film. Here, vanadium oxide (VOx), a functional oxide exhibiting the insulator-metal transition, is used as a novel type of a capping layer for the Hf0.5Zr0.5O2 (HZO) thin film. It is demonstrated that the VOx capping layer (VCL) can enhance the FE properties of the HZO thin film comprehensively. Specifically, the HZO thin film with a VCL shows large remanent polarization (2Pr ≈36.9 μC/cm2), relatively small coercive field (Ec ≈1.09 MV/cm), high endurance (up to 109 cycles), and long retention (>105 seconds). The enhanced FE properties may be attributed to the VCL-induced stabilization of the FE o-phase and suppression of oxygen vacancies at the interface. Furthermore, the HZO thin film with a VCL exhibits a successive rightward shift of polarization-voltage (P-V) hysteresis loop as the temperature increases. This is well correlated with the insulator-metal transition in a VCL, which can modulate the interfacial built-in field and thus cause the P-V loop shift. It is therefore demonstrated that a VCL not only enhances the FE properties of HZO thin films but also provides a temperature degree of freedom to modulate the FE properties, which may open up a new pathway to develop HfO2-based FE memories with high performance and novel functionalities.

We describe a study leading to the discovery of compound 11, a pan-genotypic hepatitis C virus (HCV) nonstructural protein 5A (NS5A) inhibitor with excellent potency, metabolic stability, and pharmacokinetics (PK). Compound 11 incorporating a 4-silapiperidine group was discovered by further optimizing our previous lead with a triethylsilyl moiety. It displayed great potency against genotype 1 subtype a (GT1a), -1b, -2a, -3a, -4a, -5a, and -6a with an EC50 range of 0.33-17 pM and improved potency against the resistance-associated variant GT1a_M28T. Pharmacokinetics (PK) study indicated that compound 11 has reasonable PK exposures with a high liver distribution in preclinical animal species (mouse, rat, and dog). The results of a 14 day repeat-dose toxicity study identified the safety of compound 11.

Progress in energy storage ceramics for applications has been of interest owing to their clean green nature and excellent ferroelectric/dielectric performances. In this study, lead-free Sm-doped 0.95BaTiO3–0.05Bi(Mg0.5Ti0.5)O3 (BT–BMT–xSm) relaxor ferroelectric ceramics were synthesized and confirmed to be an appropriate material for storage devices. After the introduction of Sm2O3 into BT–BMT ceramics, their hysteresis loops gradually shrank and became slender, which is beneficial to achieving high efficiency energy storage in ceramic capacitors. The maximum recoverable energy density for the BT–BMT–xSm (x = 0.03) sample reached 3.86 J cm−3 at normal temperature, and its corresponding energy efficiency reached 81.6%. Moreover, it was found from impedance spectroscopy that the breakdown field strength is related to the oxygen defect content in the samples. Ceramic samples with fewer defects have better insulation performance, which means that a high breakdown field strength will be obtained. With proper doping, enhanced relaxor behaviour and breakdown field strength were obtained to achieve excellent energy storage properties.

Capacitive deionisation (CDI), as a novel electrochemical technology, has attracted a fast-growing research interest over the past years. However, the single function of salt removal limits further development of conventional CDI systems. Herein, we propose a multi-function CDI device, which can achieve the electrochemical desalination, degradation of organic pollutants and removal of heavy metal ions through the redox electrocatalytic deionisation technology. Sulphur-doped reduced graphene oxide (S@rGO) is utilised as the anode to catalyse the degradation of rhodamine B. The Pt-coated graphite paper is used as a cathode for the removal of dichromate ions by the electro-reduction process. The voltage plateau of S@rGO is reduced by ∼0.35 V compared with the pure carbon cloth electrode, indicating the effectiveness of S@rGO as the catalyser. The salt feed is desalted to ∼0.74 mS·cm−1 level at a current density of 1 mA·cm−2. The degradation efficiency of rhodamine B (RhB) and potassium dichromate are 99.1% and 55.3%, respectively. The effects of different current densities and cycling are also investigated. This work is significant for the multi-functional process of water treatment and the device design. : The single function of salt removal limits the further development of the CDI system. A multi-function CDI device is proposed to achieve electrochemical desalination, organics degradation and dichromate ion removal.