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The promise of a strong magnetoelectric (ME) coupling in a multiferroic (MF) material is not only of fundamental interest, but also forms the basis of next generation memory devices where the direction of magnetization can be reversed by an external electric field. Using group-theory led first-principles calculations, we determine the ME properties of a relatively understudied family of layered oxides with the general formula $A_4B_3$O$_9$. We show how the tetrahedral rotations in these oxides can lead to a variety of hitherto unknown structural phases with different symmetries. In particular, a polar phase in the $Cmc2_1$ space group has been identified where a weak ferromagnetic mode arises spontaneously via a canting of the antiferromagnetically ordered $B$-site spins. In this polar phase, the polar mode couples to the magnetic modes through a rare $\Gamma$-point ME-MF coupling scheme such that the net magnetization can be directly reversed by an electric field switching of the polar mode. Moreover, in agreement with previous experimental observations, we predict room-temperature magnetism in $A_4B_3$O$_9$ layered oxides which is supported by our calculations of the magnetic exchange interaction parameters, further indicating the potential of these compounds in practical technological applications.

Type-II multiferroics, in which the magnetic order breaks inversion symmetry, are appealing for both fundamental and applied research due their intrinsic coupling between magnetic and electrical orders. Using first-principles calculations we study the ground state magnetic behaviour of Ba$_7$Mn$_4$O$_{15}$ which has been classified as a type-II multiferroic in recent experiments. Our constrained moment calculations with the proposed experimental magnetic structure shows the spontaneous emergence of a polar mode giving rise to an electrical polarisation comparable to other known type-II multiferroics. When the constraints on the magnetic moments are removed, the spins self-consistently relax into a canted antiferromagnetic ground state configuration where two magnetic modes transforming as distinct irreducible representations coexist. While the dominant magnetic mode matches well with the previous experimental observations, the second mode is found to possess a different character resulting in a non-polar ground state. Interestingly, the non-polar magnetic ground state exhibits a significantly strong linear magnetoelectric coupling comparable to the well-known multiferroic BiFeO$_3$, suggesting strategies to design new linear magnetoelectrics.

The rectified bulk photovoltaic effect (BPVE) in noncentrosymmetric semiconductors, also called shift current, is considered promising for optoelectronic devices, terahertz emission and possibly solar energy harvesting. A clear understanding of the shift current mechanism and search for materials with large shift current is, therefore, of immense interest. $ABC$ semiconductors LiZn$X$ ($X$ = N, P, As, and Sb) can be stabilized in cubic as well as hexagonal morphologies lacking inversion symmetry$-$an ideal platform to investigate the significant contributing factors to shift current, such as the role of structure and chemical species. Using density-functional calculations properly accounting for the electronic bandgaps, the shift current conductivities in LiZn$X$ ($X$ = P, As, Sb) are found to be approximately an order of magnitude larger than the well-known counterparts and peak close to the maximum solar radiation intensity. Notably, hexagonal LiZnSb shows a peak shift current conductivity of $\sim -75 ~\rm{\rm{\mu}}$A/V$^2$ and Glass coefficient of $ -20$ $\times$ 10$^{-8}$ cm/V, comparable to the highest predicted values in literature. Our comparative analysis reveals a quantitative relationship between the shift current response and the electronic polarization. These findings not only posit Li-Zn-based $ABC$ semiconductors as viable material candidates for potential applications but also elucidates key aspects of the structure-BPVE relationship.

The compositional as well as structural asymmetries in Janus transition metal dichalcogenides (J-TMDs) and their van der Waals heterostructures (vdW HSs) induce an intrinsic Rashba spin-splitting. We investigate the variation of band-gaps and the Rashba parameter in three different Janus heterostructures having AB-stacked Mo$XY$/W$XY$ ($X$, $Y$ = S, Se, Te; $X\neq Y$) geometry with a $Y-Y$ interface, using first-principles calculations. We consider the effect of external electric field and in-plane biaxial strain in tuning the strength of the intrinsic electric field, which leads to remarkable modifications of the band-gap and the Rashba spin-splitting. In particular, it is found that the positive applied field and compressive in-plane biaxial strain can lead to a notable increase in the Rashba spin-splitting of the valence bands about the $\Gamma$-point. Moreover, our \textit{ab-initio} density functional theory (DFT) calculations reveal the existence of a type-II band alignment in these heterostructures, which remains robust under positive external field and biaxial strain. These suggest novel ways of engineering the electronic, optical, and spin properties of J-TMD van der Waals heterostructures holding a huge promise in spintronic and optoelectronic devices. Detailed $\mathbf{k\cdot p}$ model analyses have been performed to investigate the electronic and spin properties near the $\Gamma$ and K points of the Brillouin zone., Comment: 17 pages, 12 figures

Large bandgap insulators are considered promising for applications such as photocatalysts, dielectric resonators and interference filters. Based on synchrotron X-ray diffraction, diffuse reflectance measurement and density functional theory, we report the crystal structure, optical response, and electronic properties of the synthesized $d^0$ double perovskite Ba$_2$ScTaO$_6$. In contrast to earlier prediction, the electronic bandgap is found to be large, $\sim 4.66$ eV. The optical response is characterized by the presence of multiple exciton modes extending up to the visible range. A detailed investigation of the direct gap excitons based on the Elliot formula is presented. Density functional theory based investigation of the electronic properties within generalized gradient approximation severely underestimates the electronic gap. To reach a quantitative agreement, we consider different available flavors of the modified-Becke-Johnson exchange-correlation potential and discuss their effects on the electronic and optical properties., Comment: 12 pages, 6 figures

We introduce an operational definition of the Berry Phase Rectification Tensor as the second-order change of polarization of a material in response to an ideal short pulse of an electric field. Under time-reversal symmetry this tensor depends exclusively on the Berry phases of the Bloch bands and not their energy dispersions, making it an intrinsic property to each material which contains contributions from both the inter-band shift currents and the intra-band Berry Curvature Dipole. We also introduce the Solar Rectification Vector as a technologically relevant figure of merit for a bulk photo-current generation under ideal black-body radiation in analogy with the classic solar cell model of Shockley and Queisser. We perform first-principles calculations of the Berry Phase Rectification Tensor and the Solar Rectification Vector for the Weyl semimetal TaAs and the insulator LiAsSe2 which features large shift currents close to the peak of solar radiation intensity., Comment: 13 pages, 5 figures

We study the dynamic chiral magnetic conductivity (DCMC) and natural optical activity in an inversion-broken tilted Weyl semimetal (WSM). Starting from the Kubo formula, we derive the analytical expressions for the DCMC for two different directions of the incident electromagnetic wave. We show that the angle of rotation of the plane of polarization of the transmitted wave exhibits remarkable anisotropic behavior and is larger along the tilt direction. This striking anisotropy of DCMC which results in anisotropic optical activity and rotary power, can be experimentally observed as a topological magneto-electric effect of inversion-broken tilted WSMs. Finally, using the low energy Hamiltonian, we show that the DCMC follows the universal $\frac{1}{\omega^2}$ decay in the high frequency regime. In the low frequency regime, however, the DCMC shows sharp peaks at the tilt dependent effective chemical potentials of the left-handed and right-handed Weyl points. This can serve as a signature to distinguish between the type-I and type-II Weyl semimetals.

Chronic exposure to inorganic arsenic is a potential cause of carcinogenesis. It elicits its potential by generation of ROS, leading to DNA, protein and lipid damage. Therefore, the deleterious effect of arsenic can be mitigated by quenching ROS using antioxidants. There is a homology between the protein coding regions of mice and human. Effect of these alterations in human can be mimicked in mice. Therefore to understand the underlying mechanism of arsenic toxicity and its amelioration by black tea, studies have been conducted in mice model. Long term exposure to iAs leads to tumour growth, which has been found to be alleviated by black tea. Observations reveal that black tea has two salutary effects on the growth of tumour: the rate of growth of damaged cells was appreciably reduced and an early saturation of the level of damage is achieved. To take the experimental findings further, the experimental data have been modelled with simple dynamical equations. The curves obtained from \textit{in vivo} studies have been fitted with the data obtained from the model. The corresponding steady states and their stabilities are analyzed.

The existence of a body centered tetragonal phase of Cu has been investigated in this manuscript when the single crystal FCC Cu is subjected to both high pressure and high temperature. The results have been demonstrated through DFT calculations (which are typically done at 0 K) followed by Helmholtz free energy calculations (for high temperature). The new metastable phase of Cu demonstrates higher thermal conductivity compared to that of the FCC phase and thereby may be beneficial for high temperature engineering applications.

We have investigated the electronic structures of LaBi and LuBi, employing the full-potential all electron method as implemented in Wien2k. Using this, we have studied in detail both the bulk and the surface states of these materials. From our band structure calculations we find that LuBi, like LaBi, is a compensated semi-metal with almost equal and sizable electron and hole pockets. In analogy with experimental evidence in LaBi, we thus predict that LuBi will also be a candidate for extremely large magneto-resistance (XMR), which should be of immense technological interest. Our calculations reveal that LaBi, despite being gapless in the bulk spectrum, displays the characteristic features of a $\mathbb{Z}_{2}$ topological semi-metal, resulting in gapless Dirac cones on the surface, whereas LuBi only shows avoided band inversion in the bulk and is thus a conventional compensated semi-metal with extremely large magneto-resistance.

We perform \textit{ab initio} investigations of the bulk and surface band structures of LaSb and LaBi and resolve the existing disagreements about the topological property of LaSb, considering LaBi as a reference. We examine the bulk band structure for band inversion, along with the stability of surface Dirac cones (if any) to time-reversal-preserving perturbations, as a strong diagnostic test for determining the topological character of LaSb, LaBi and LaSb-LaBi multilayer. A detailed \textit{ab initio} investigation of a multilayer consisting of alternating unit cells of LaSb and LaBi shows the presence of band inversion in the bulk and a massless Dirac cone on the (001) surface, which remains stable under the influence of time-reversal-preserving perturbations, thus confirming the topologically non-trivial nature of the multilayer in which the electronic properties can be tailored as per requirement. A detailed $\mathbb{Z}_2$ invariant calculation is performed to arrive at a holistic conclusion.

Disorder, primarily in the form of oxygen vacancies, cation stoichiometry and atomic inter-diffusion, appear to play vital roles in the electronic and transport properties of the metallic electron liquid at the oxide hetero-interfaces. Antisite disorder is also understood to be a key player in this context. In order to delineate the roles of two of these key factors, oxygen vacancy and antisite disorder, we have investigated the effect of oxygen vacancy on the antisite disorder at a number of interfaces separating two La-based transition metal oxides using density functional theory. Oxygen vacancy is found to suppress the antisite disorder in some heterostructures and thereby stabilizes the ordered structure, while in some other systems it tends to drive the disorder. Thus by controlling the oxygen partial pressure during the growth, it is possible to engineer the antisite disorder in many oxide heretostructures.